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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCTWA90N65G2V-4

Name: SCTWA90N65G2V-4
Brand: STMicroelectronics
SKU: SCTWA90N65G2V-4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCTWA90N65G2V-4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SCTWA90N65G2V-4.pdf

Description:: TRANS SJT N-CH 650V 119A HIP247

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Product details

Overview

SCTWA90N65G2V-4 from STMicroelectronics is a silicon carbide (SiC) Power MOSFET designed for high-efficiency, high-voltage switching in demanding power conversion stages. It delivers 650 V drain-source voltage rating, 18 mΩ typical R_DS(on) at 18 V gate drive, 119 A continuous drain current at T_C = 25 °C, and operates up to 200 °C junction temperature - enabling use in compact, high-power-density industrial SMPS and motor drives.

For engineers reviewing the SCTWA90N65G2V-4 datasheet, SCTWA90N65G2V-4 pinout, SCTWA90N65G2V-4 application, or SCTWA90N65G2V-4 equivalent, key selection criteria include its ultra-low Q_g (157 nC), fast intrinsic SiC body diode (t_rr = 17 ns), robust SOA at 200 °C, and source-sensing configuration for precision current control in high-frequency hard-switched topologies.

Technical Context

This 2nd-generation SiC MOSFET employs planar trench-gate architecture optimized for low conduction loss and minimal temperature-dependent switching loss variation. Its gate threshold voltage (1.9–5.0 V) and negative gate bias capability (-5 V) support robust noise immunity and reliable turn-off under high dv/dt conditions.

The HiP247-4 package integrates dedicated driver source (pin 3) and power source (pin 2) terminals to eliminate source inductance impact on gate drive loop, enabling stable high-speed switching with reduced oscillation and EMI - critical for >100 kHz LLC resonant converters and three-phase inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports 400 V DC bus designs with ≥50 % voltage margin for surge and ringing tolerance in industrial AC/DC front-ends.
R_DS(on) typ.	18 mΩ at V_GS = 18 V, I_D = 50 A - Enables <1.5 W conduction loss at 100 A, reducing heatsink size in 3–5 kW PFC stages.
Q_g	157 nC - Low gate charge allows fast switching with modest gate drivers (e.g., 2 A peak), cutting drive power and simplifying isolation.
t_rr	17 ns at T_J = 25 °C - Ultra-fast reverse recovery minimizes commutation loss and eliminates external anti-parallel SiC diode in half-bridge configurations.
T_J max	200 °C - Enables derating-free operation at elevated ambient temperatures (e.g., sealed enclosures), improving system reliability without forced cooling.
R_thJC	0.31 °C/W - High thermal conductivity of SiC die + copper-tab HiP247-4 package enables >500 W dissipation with moderate heatsinking.

Pinout & Package

The SCTWA90N65G2V-4 is housed in the HiP247-4 surface-mount-compatible through-hole package, featuring isolated copper tab (Drain), Kelvin-connected driver source terminal, and separate high-current power source terminal for minimized source inductance.

Pin/Terminal	Circuit Role	Design Meaning
1, TAB	Drain	High-current output node electrically connected to exposed copper tab; primary heat path to heatsink.
2	Power Source (S_P)	Carries full load current return path; connects to main PCB ground plane or low-inductance source rail.
3	Driver Source (S_D)	Kelvin sense point for gate driver feedback loop; decouples gate drive return from power current, stabilizing V_GS during fast dI/dt.
4	Gate	Control input requiring -5 V to +18 V drive; low C_iss (3380 pF) enables clean edge rates with standard gate drivers.

Key Features

Feature	Design Value
Source sensing pin (Kelvin source)	Eliminates source inductance error in gate drive loop, ensuring accurate V_GS control during 100+ A/ns switching transitions.
Ultra-low Q_g and C_iss	157 nC total gate charge and 3380 pF input capacitance enable <30 ns turn-on delay with 2.2 Ω gate resistor, supporting >500 kHz operation.
Robust intrinsic SiC body diode	17 ns reverse recovery time and 308 nC Q_rr allow reliable synchronous rectification and hard-commutated bridge operation without external diodes.
200 °C maximum junction temperature	Enables full-rated conduction at T_C = 100 °C (90 A), permitting smaller heatsinks and higher power density in space-constrained industrial inverters.

Applications

Industrial Motor Drives

Server & Telecom SMPS

Use Scenario: Three-phase 7.5 kW inverter driving permanent magnet synchronous motor in HVAC compressors.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 6-pack IGBT/SiC module replacement, operating at 16 kHz PWM with 400 V DC link.

Use Value: 200 °C T_J rating permits full 119 A current at ambient 70 °C without derating; low E_off (200 µJ at 200 °C) reduces thermal stress in field-oriented control loops.

Use Scenario: Active clamp forward or LLC resonant converter in 3 kW server PSU with 54 V output.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC input, switching at 300–500 kHz with zero-voltage transition assistance.

Use Value: 18 mΩ R_DS(on) and 135 µJ E_on at 200 °C maintain >97.5 % efficiency across full load range while minimizing magnetics size.

Renewable Energy Inverters

EV Onboard Chargers

Use Scenario: DC-AC stage in 10 kW string solar inverter with ungrounded topology and 1000 V PV input.

IC Role / Device Role / Timing Role: Full-bridge switching device in transformerless inverter, subjected to bipolar voltage stress and rapid grid synchronization transients.

Use Value: 650 V V_DS with 10 µA I_DSS ensures leakage stability over 25-year field life; t_rr independence from temperature prevents shoot-through drift during thermal cycling.

Use Scenario: Bidirectional AC/DC and DC/DC stage in 11 kW OBC using dual-active-bridge topology.

IC Role / Device Role / Timing Role: High-frequency switching element in secondary-side 400 V–800 V isolation stage, operating with phase-shifted PWM and soft switching.

Use Value: Dedicated driver source pin enables precise gate timing control across wide temperature range (-40 to 150 °C), maintaining ZVS boundary and minimizing circulating current loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0065090D (Wolfspeed)	Same 650 V/90 mΩ rating but 10% higher R_DS(on) (20 mΩ), no Kelvin source pin, TO-247-3L package.	Lacks source sensing; requires careful gate loop layout to avoid instability above 200 kHz; lower thermal resistance (0.25 °C/W) but no S_D/S_P separation.	Select when cost sensitivity outweighs need for ultra-stable gate drive in high-dI/dt applications.
IXFH90N65X2 (IXYS)	650 V/18 mΩ, TO-247-4L package with Kelvin source, but higher Q_g (190 nC) and slower t_rr (22 ns).	Higher gate drive loss and increased E_off at high temperature reduce efficiency in >300 kHz designs; suitable for 20–100 kHz industrial drives.	Select when legacy gate driver compatibility (e.g., IR2110-based) is prioritized over peak efficiency at high frequency.

Compared with C3M0065090D and IXFH90N65X2, the SCTWA90N65G2V-4 uniquely combines Kelvin source, lowest Q_g, and stable 200 °C operation - making it optimal for next-gen high-frequency, high-reliability power systems where gate loop integrity and thermal headroom are critical.

Availability

SCTWA90N65G2V-4 is available at Aetrix Electronics and suitable for industrial motor drives, renewable energy inverters, and high-density server SMPS requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.

Supply support for SCTWA90N65G2V-4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

This device belongs to ST's second-generation SiC Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in 650 V systems where thermal resilience, fast switching, and integrated source sensing are essential.

FAQ

What is the recommended gate drive voltage range for reliable operation?

The SCTWA90N65G2V-4 specifies a recommended gate-source voltage range of –5 V to +18 V. A –5 V turn-off bias ensures robust immunity against parasitic turn-on during high dv/dt commutation, while +18 V maximizes R_DS(on) reduction and minimizes conduction loss. Operating outside this range risks gate oxide degradation or incomplete turn-on.

Does the HiP247-4 package require special PCB layout considerations?

Yes - the HiP247-4's Kelvin source (pin 3) must be routed separately from the power source (pin 2) with minimal loop area and direct connection to the gate driver's source reference. The drain tab requires full thermal pad coverage with ≥6 vias to internal ground planes. Avoid shared traces between S_D and S_P to preserve gate drive accuracy.

How does R_DS(on) change with temperature, and what is its impact on thermal design?

R_DS(on) increases by ~60 % from 25 °C to 200 °C (18 → 30 mΩ), but remains predictable and monotonic. This behavior allows conservative thermal modeling using the 30 mΩ value for worst-case conduction loss at maximum T_J. The normalized curve (Figure 11) confirms linear positive TC, simplifying derating calculations.

Can this device replace silicon IGBTs directly in existing 650 V inverters?

Yes - with gate drive and layout adaptation. Its 650 V rating, 119 A current capability, and SOA (Figure 1) support direct substitution in 15–25 kHz motor drives. However, gate resistors must be reduced (vs. IGBTs) due to lower Q_g, and snubber networks may be simplified thanks to faster switching and lower E_off.

SCTWA90N65G2V-4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 119A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 24mOhm @ 50A, 18V

Vgs(th) (Max) @ Id:: 5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 157 nC @ 18 V

Vgs (Max):: +22V, -10V

Input Capacitance (Ciss) (Max) @ Vds:: 3380 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 565W (Tc)

Operating Temperature:: -55°C ~ 200°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: HiP247™ Long Leads

SCTWA90N65G2V-4 FAQ

1.How can I place an order for SCTWA90N65G2V-4 through Aetrix?

Please submit a Request for Quotation (RFQ) for SCTWA90N65G2V-4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCTWA90N65G2V-4 reliable?

The price and inventory of SCTWA90N65G2V-4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCTWA90N65G2V-4 is usually 5 days.

3.What payment methods are accepted for SCTWA90N65G2V-4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCTWA90N65G2V-4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCTWA90N65G2V-4?

SCTWA90N65G2V-4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCTWA90N65G2V-4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCTWA90N65G2V-4?

For technical support, including SCTWA90N65G2V-4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCTWA90N65G2V-4 requirements.

6.How does Aetrix verify that SCTWA90N65G2V-4 is sourced from the original manufacturer or authorized distributors?

All SCTWA90N65G2V-4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCTWA90N65G2V-4 meets industry standards.

7.What is the process for return or replacement of SCTWA90N65G2V-4?

All SCTWA90N65G2V-4 units undergo pre-shipment inspection (PSI). If there is an issue with SCTWA90N65G2V-4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCTWA90N65G2V-4 part is unused and in its original packaging.

Return procedure for SCTWA90N65G2V-4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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