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STMicroelectronics SH32N65DM6AG
- Part No.:
- SH32N65DM6AG
- Manufacturer:
- STMicroelectronics
- Category:
- FET, MOSFET Arrays
- Package:
- 9-PowerSMD
- Datasheet:
-
SH32N65DM6AG.pdf
- Description:
- MOSFET 2N-CH 650V 32A 9ACEPACK
- Quantity:
- Payment:
- Shipping:
Inventory:197
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Product details
Overview
SH32N65DM6AG from STMicroelectronics is an automotive-grade ACEPACK SMIT half-bridge power module integrating two 650 V, 97 mΩ N-channel MDmesh DM6 MOSFETs with fast-recovery body diodes. It delivers 32 A continuous drain current at TC = 25 °C, supports 3.4 kVrms/min isolation, and targets high-efficiency switching in on-board chargers and industrial motor drives.
For engineers reviewing the SH32N65DM6AG datasheet, SH32N65DM6AG pinout, SH32N65DM6AG application, or SH32N65DM6AG equivalent, key selection criteria include its 0.6 °C/W junction-to-case thermal resistance, 47 nC total gate charge, low 97 mΩ RDS(on), and ACEPACK SMIT surface-mount package with isolated top-side thermal pad.
Technical Context
This device implements a monolithic half-bridge topology with integrated source-drain diodes exhibiting 125 ns reverse recovery time (TJ = 25 °C) and 2.5 µC Qrr at 150 °C. Its DBC substrate enables low thermal resistance and high dv/dt ruggedness of 100 V/ns under MOSFET switching conditions.
The module operates across -55 to 150 °C junction temperature range, supports 120 A pulsed drain current, and features 2211 pF input capacitance and 396 pF equivalent output capacitance (Coss,eq) - critical for minimizing switching losses in hard-switched PFC and DC-DC converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 650 V - blocking voltage sufficient for 400 V AC-input PFC stages and 3-phase inverter bridges |
| RDS(on) max. | 97 mΩ - ensures ≤2.3 W conduction loss at 32 A, enabling compact thermal design |
| ID (cont.) | 32 A @ TC = 25 °C - rated for sustained high-current operation in space-constrained modules |
| RthJC | 0.6 °C/W - enables direct heatsink mounting with minimal thermal interface resistance |
| VISO | 3.4 kVrms/min - meets reinforced insulation requirements for EV traction inverters and industrial drives |
| Qg | 47 nC - determines gate driver power requirement and influences switching speed control |
| tr / tf | 10 ns / 9 ns (resistive load) - supports >500 kHz switching in resonant topologies |
Pinout & Package
ACEPACK SMIT is a surface-mount, isolated-package power module with top-side thermal pad and 9-pin layout. The package measures 20.0 × 22.0 × 4.0 mm (L × W × H), features direct bond copper (DBC) substrate, and provides 3.4 kVrms isolation between pins and heatsink plate.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (GHS) | High-side gate | Drives upper MOSFET gate; requires isolated gate driver referenced to HS source |
| 2 (KHS) | High-side source / half-bridge mid-point | Output node of half-bridge; connects to inductive load or PFC choke |
| 3, 4 (NC) | No connect | Internally unconnected; must remain floating per datasheet |
| 5 (KLS) | Low-side source / power ground | Reference node for low-side gate drive and system power return path |
| 6 (GLS) | Low-side gate | Drives lower MOSFET gate; referenced to KLS (pin 5) |
| 7 (DC+) | High-side drain / bus positive | Connects to DC-link capacitor positive terminal |
| 8 (DC−) | Low-side drain / bus negative | Connects to DC-link capacitor negative terminal and system ground |
| 9 (U) | Thermal pad / isolation barrier | Electrically isolated top-side copper pad for heatsink attachment; not electrically connected |
Key Features
| Feature | Design Value |
|---|---|
| AQG 324 qualification | Meets automotive AEC-Q101 stress test requirements for reliability in EV powertrain systems |
| Fast recovery body diode | 125 ns trr at 25 °C enables zero-voltage switching in LLC resonant converters |
| Low package inductance | Minimizes voltage overshoot during turn-off, reducing need for snubbers in 650 V applications |
| Dice-on-DBC substrate | Enables 0.6 °C/W RthJC and supports >200,000 thermal cycles in automotive duty cycles |
| Isolated top-side thermal pad | Allows dual-sided cooling without compromising electrical isolation or requiring insulating hardware |
Applications
| On-Board Charger (OBC) | Industrial Motor Drive Inverter |
|---|---|
|
Use Scenario: Bidirectional AC/DC and DC/DC conversion in 11 kW EV on-board chargers. IC Role / Device Role / Timing Role: Half-bridge power stage in totem-pole PFC and isolated DC-DC LLC primary side. Use Value: 650 V rating and 97 mΩ RDS(on) enable >97% efficiency at full load while meeting IEC 61851-1 creepage/clearance requirements. |
Use Scenario: Three-phase inverter driving 7.5 kW induction motors in HVAC and pump systems. IC Role / Device Role / Timing Role: Phase-leg switch in 6-pack configuration; each SH32N65DM6AG forms one half-bridge leg. Use Value: Low 0.6 °C/W RthJC and 3.4 kVrms isolation allow direct heatsink mounting and eliminate isolation transformers in Class I safety designs. |
| Solar Microinverter | Server PSU Active Clamp Forward |
|
Use Scenario: Single-phase grid-tied microinverter converting 40–60 V PV input to 230 V AC output. IC Role / Device Role / Timing Role: High-frequency switching element in interleaved boost + full-bridge inverter stages. Use Value: 100 V/ns dv/dt ruggedness prevents false triggering during rapid bus transients common in islanding detection events. |
Use Scenario: Primary-side switch in 3.3 kW server power supply using active clamp forward topology. IC Role / Device Role / Timing Role: Main switching device handling 400 V DC bus with synchronous rectification on secondary side. Use Value: 47 nC Qg and 2211 pF Ciss support precise timing control of active clamp MOSFET overlap, minimizing conduction loss and EMI. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge power module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STGW30H65DFB | TO-247-3L discrete IGBT with 650 V/30 A rating; no integrated diode recovery optimization | Limited to <20 kHz switching; unsuitable for >300 kHz resonant topologies due to slow IGBT tail current | Prefer for cost-sensitive industrial inverters where switching frequency <15 kHz |
| FSB50450 | 650 V, 45 A IPM with built-in gate driver and protection; larger footprint (29 × 15 mm) | Includes overcurrent shutdown and bootstrap diode; eliminates external driver but reduces layout flexibility | Prefer when system-level protection integration and reduced BOM count outweigh thermal performance needs |
Compared with STGW30H65DFB and FSB50450, SH32N65DM6AG offers superior high-frequency efficiency via optimized diode recovery and lowest RthJC, making it optimal for compact, high-power-density designs requiring >100 kHz operation and direct thermal coupling to heatsinks.
Availability
SH32N65DM6AG is available at Aetrix Electronics and suitable for on-board chargers, industrial motor drives, solar microinverters, and server PSUs requiring stable component supply across automotive and industrial production lifecycles.
Supply support for SH32N65DM6AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications.
This part belongs to the MDmesh DM6 family of high-voltage superjunction MOSFETs engineered specifically for high-efficiency, high-frequency switching in EV charging, renewable energy, and industrial power conversion.
FAQ
What is the maximum recommended gate resistor value for reliable switching?
The datasheet specifies 4.7 Ω for resistive load testing and 6.8–82 Ω for inductive load characterization. For 650 V operation with 520 V VDD, a 10–15 Ω non-inductive gate resistor balances switching loss reduction and EMI control while maintaining safe dv/dt limits below 100 V/ns.
Can pins 3 and 4 be used for mechanical anchoring or thermal relief?
No - pins 3 and 4 are explicitly marked NC (no connect) in the datasheet and must remain unconnected. Soldering or routing to these terminals violates AQG 324 qualification and may compromise internal die attachment integrity or isolation performance.
How does the top-side thermal pad (pin 9) affect thermal design?
Pin 9 is an electrically isolated copper pad bonded directly to the DBC substrate. It must be soldered to a heatsink using thermally conductive, electrically insulating material (e.g., ceramic-filled thermal pad). This path accounts for >80% of total heat transfer and enables junction-to-heatsink Rth < 1.2 °C/W with proper interface design.
Is the body diode suitable for synchronous rectification in LLC resonant converters?
Yes - the fast-recovery body diode achieves 125 ns trr at 25 °C and 260 ns at 150 °C, with low Qrr (0.52–2.5 µC) and soft recovery characteristics confirmed in Figure 14 test circuit. These parameters meet ZVS requirements for 300–700 kHz LLC operation without external SiC diode replacement.
SH32N65DM6AG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- ECOPACK®
- Package/Case:
- 9-PowerSMD
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Half Bridge)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 650V
- Current - Continuous Drain (Id) @ 25°C:
- 32A (Tc)
- Rds On (Max) @ Id, Vgs:
- 97mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id:
- 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 47nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2211pF @ 100V
- Power - Max:
- 208W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 9-ACEPACK SMIT
SH32N65DM6AG FAQ
1.How can I place an order for SH32N65DM6AG through Aetrix?
Please submit a Request for Quotation (RFQ) for SH32N65DM6AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SH32N65DM6AG reliable?
The price and inventory of SH32N65DM6AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SH32N65DM6AG is usually 5 days.
3.What payment methods are accepted for SH32N65DM6AG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SH32N65DM6AG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SH32N65DM6AG?
SH32N65DM6AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SH32N65DM6AG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SH32N65DM6AG?
For technical support, including SH32N65DM6AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SH32N65DM6AG requirements.
6.How does Aetrix verify that SH32N65DM6AG is sourced from the original manufacturer or authorized distributors?
All SH32N65DM6AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SH32N65DM6AG meets industry standards.
7.What is the process for return or replacement of SH32N65DM6AG?
All SH32N65DM6AG units undergo pre-shipment inspection (PSI). If there is an issue with SH32N65DM6AG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SH32N65DM6AG part is unused and in its original packaging.
Return procedure for SH32N65DM6AG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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