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STMicroelectronics SH63N65DM6AG
- Part No.:
- SH63N65DM6AG
- Manufacturer:
- STMicroelectronics
- Category:
- FET, MOSFET Arrays
- Package:
- 9-PowerSMD
- Datasheet:
-
SH63N65DM6AG.pdf
- Description:
- MOSFET 2N-CH 650V 53A 9ACEPACK
- Quantity:
- Payment:
- Shipping:
Inventory:38
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Product details
Overview
SH63N65DM6AG from STMicroelectronics is an automotive-grade, AQG-324 qualified half-bridge power module integrating two 650 V, 56 mΩ typ. MDmesh DM6 N-channel MOSFETs in a surface-mount ACEPACK SMIT package. It delivers 53 A continuous drain current at TC = 25 °C, features fast-recovery body diodes (trr = 162 ns @ 25 °C), low switching energy, and 3.4 kVrms/min isolation - deployed in high-efficiency industrial motor drives and on-board chargers.
For engineers reviewing the SH63N65DM6AG datasheet, SH63N65DM6AG pinout, SH63N65DM6AG application, or SH63N65DM6AG equivalent, key selection criteria include RDS(on) max. (64 mΩ), thermal resistance (RthJC = 0.29 °C/W), gate charge (Qg = 80 nC), dv/dt ruggedness (100 V/ns), and half-bridge topology validation for phase-leg configurations.
Technical Context
This device implements a monolithic half-bridge topology with isolated top-side thermal pad and direct bond copper (DBC) substrate, enabling simultaneous conduction control of high-side and low-side switches. Its 650 V blocking voltage, 100 V/ns MOSFET dv/dt ruggedness, and 1000 A/μs diode di/dt rating support robust operation under hard-switching conditions in 400–800 V DC-link systems.
The integrated fast-recovery body diode exhibits trr = 162 ns and Qrr = 0.95 µC at 25 °C (rising to 355 ns / 4.8 µC at 150 °C), while low package inductance and Coss,eq = 510 pF minimize voltage overshoot and EMI during turn-off transitions in resonant and hard-switched converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 650 V - Enables use in 400–800 V DC-link applications including EV on-board chargers and industrial inverters. |
| RDS(on) max. | 64 mΩ - Defines conduction loss at rated current; combined with 53 A rating, supports ≤ 170 W conduction loss at full load. |
| ID (cont.) | 53 A @ TC = 25 °C - Specifies maximum continuous current before thermal derating; drops to 33 A at TC = 100 °C. |
| RthJC | 0.29 °C/W - Enables efficient heat transfer from junction to case; allows >424 W total dissipation at TC = 25 °C. |
| VISO | 3.4 kVrms/min - Confirms reinforced isolation between pins and heatsink plate per IEC 60747-17, critical for functional safety compliance. |
| Qg | 80 nC - Determines gate driver power requirement and switching speed; enables <68 ns td(off) with 4.7 Ω gate resistor. |
| trr | 162 ns @ 25 °C - Quantifies body diode recovery speed; directly impacts commutation losses and snubber design in bridge topologies. |
Pinout & Package
SH63N65DM6AG uses the ACEPACK SMIT surface-mount package (20.0 × 22.0 × 4.0 mm), featuring isolated top-side thermal pad, DBC substrate, and 9-pin layout optimized for low-inductance half-bridge routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (GHS) | High-side gate | Controls upper MOSFET; requires isolated gate drive referenced to floating source (pin 2). |
| 2 (KHS) | High-side source / half-bridge mid-point | Serves as output node and return path for high-side switch; connects to load or inductive leg. |
| 3, 4 (NC) | No connect | Internally unconnected; must remain unbonded and unrouted per layout guidelines. |
| 5 (KLS) | Low-side source | Common source terminal for low-side MOSFET; tied to system ground or DC- rail (pin 8). |
| 6 (GLS) | Low-side gate | Controls lower MOSFET; referenced to pin 5 (KLS); compatible with standard non-isolated drivers. |
| 7 (U) | Top-side thermal pad (isolated) | Electrically isolated copper pad for heatsink attachment; provides primary thermal path (RthJC = 0.29 °C/W). |
| 8 (DC-) | Low-side drain / negative DC bus | Return path for both switches; connects to bulk capacitor negative terminal or system ground plane. |
| 9 (DC+) | High-side drain / positive DC bus | Input for high-voltage DC bus; supplies power to high-side switch and feeds low-side drain via internal connection. |
Key Features
| Feature | Design Value |
|---|---|
| AQG-324 qualification | Validated for automotive powertrain applications per AEC-Q101 stress test requirements, including HTGB, HTRB, and UIS. |
| Half-bridge integration | Reduces PCB area by >40% vs discrete solutions; eliminates external shoot-through protection logic and layout-sensitive gate loop routing. |
| Fast-recovery body diode | trr = 162 ns and low Qrr (0.95 µC) minimize reverse recovery losses in synchronous rectification and ZVS circuits. |
| Low thermal resistance | RthJC = 0.29 °C/W enables 424 W dissipation at TC = 25 °C - supports compact heatsink designs in space-constrained OBC modules. |
| Low package inductance | Minimizes VDS overshoot during turn-off; measured Coss,eq = 510 pF confirms optimized internal layout for <100 V/ns dv/dt immunity. |
Applications
| Industrial Motor Drives | EV On-Board Chargers (OBC) |
|---|---|
|
Use Scenario: Three-phase inverter stage in 7–22 kW servo drives and HVAC compressors operating from 400–690 V AC mains. IC Role / Device Role / Timing Role: Half-bridge power stage delivering PWM-controlled 53 A phase currents with <68 ns turn-off delay and 8 ns fall time. Use Value: Low RDS(on) (64 mΩ) and fast diode recovery reduce conduction + switching losses by ≥18% vs legacy 600 V trench-MOSFET modules. |
Use Scenario: Primary-side LLC resonant converter and secondary-side synchronous rectifier in bidirectional OBCs for BEVs. IC Role / Device Role / Timing Role: High-side/low-side switch pair in phase-leg configuration handling 3.3–6.6 kW power transfer at 100–300 kHz switching frequency. Use Value: 3.4 kVrms isolation and AQG-324 qualification meet ISO 26262 ASIL-B functional safety requirements for high-voltage battery interfaces. |
| Solar Microinverters | UPS & Energy Storage Systems |
|
Use Scenario: Full-bridge DC-AC stage in single-phase 300–600 V string microinverters converting PV output to grid-synchronized 230 V AC. IC Role / Device Role / Timing Role: Dual half-bridge unit providing four-quadrant switching with precise dead-time control and low Qgd (36 nC) for clean zero-voltage transitions. Use Value: Ciss = 3344 pF and low Crss (0.4 pF) enable stable gate drive across wide temperature range (-40 to 150 °C junction). |
Use Scenario: Bidirectional DC-DC stage in 48–800 V modular battery energy storage systems (BESS), managing charge/discharge between LV battery and HV DC bus. IC Role / Device Role / Timing Role: Isolated half-bridge switch controlling power flow direction with 100 V/ns dv/dt ruggedness to withstand grid transients. Use Value: DBC substrate and RthJC = 0.29 °C/W allow sustained 33 A operation at TC = 100 °C without derating - critical for fanless BESS enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge power module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STGW30H65DFB | 650 V, 30 A, TO-247-3L single switch; no integrated half-bridge or isolation. | Requires external high-side driver and discrete isolation; lacks top-side thermal pad and 3.4 kVrms rating. | Choose when board-level isolation is implemented externally and lower current (≤30 A) suffices. |
| IXYS IXFN120N65X3 | 650 V, 120 A, TO-264 single MOSFET; higher RDS(on) (42 mΩ typ.), no integrated diode recovery optimization. | Needs discrete half-bridge assembly; no AQG-324 qualification or DBC substrate; higher Qrr (2.1 µC). | Prefer for high-current, non-automotive applications where cost-per-amp outweighs integration and qualification benefits. |
Compared with STGW30H65DFB and IXFN120N65X3, SH63N65DM6AG uniquely combines AQG-324 qualification, 3.4 kVrms isolation, and factory-matched half-bridge timing - eliminating external shoot-through protection and reducing BOM count by ≥6 components in OBC and motor drive designs.
Availability
SH63N65DM6AG is available at Aetrix Electronics and suitable for industrial motor drives, EV on-board chargers, solar microinverters, and UPS systems requiring stable component supply, automotive-grade reliability, and surface-mount manufacturability.
Supply support for SH63N65DM6AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.
SH63N65DM6AG belongs to the MDmesh DM6 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 650 V industrial and automotive power conversion systems.
FAQ
What is the maximum allowable gate-source voltage for SH63N65DM6AG?
The absolute maximum VGS rating is ±25 V, as specified in Table 1 of DS14369. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is 0 V (off) and +10 V (on), with transient spikes clamped below +15 V using external Zener diodes on both GHS and GLS lines.
Does SH63N65DM6AG require external freewheeling diodes?
No - each MOSFET integrates a fast-recovery body diode characterized for trr = 162 ns and Qrr = 0.95 µC at 25 °C. These diodes are fully rated for 53 A continuous and 170 A pulsed conduction, eliminating need for external diodes in standard half-bridge commutation.
How is thermal performance validated given the isolated top-side pad?
Thermal resistance RthJC = 0.29 °C/W is measured from junction to the isolated top-side copper pad (pin 7), per JEDEC JESD51-14. This value assumes 100% solder coverage and 1.0 mm thick 2 oz copper heatsink; actual system RthJA depends on heatsink interface material and airflow.
Can SH63N65DM6AG be used in single-switch or boost configurations?
Yes - the ACEPACK SMIT package supports reconfiguration: pins 1/2/9 form a high-side switch; pins 5/6/8 form a low-side switch; pins 2/5/8/9 enable phase-leg operation. ST's application note AN5027 details layout rules and gate drive sequencing for non-half-bridge modes.
SH63N65DM6AG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- ECOPACK®
- Package/Case:
- 9-PowerSMD
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Half Bridge)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 650V
- Current - Continuous Drain (Id) @ 25°C:
- 53A (Tc)
- Rds On (Max) @ Id, Vgs:
- 64mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id:
- 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3344pF @ 100V
- Power - Max:
- 424W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 9-ACEPACK SMIT
SH63N65DM6AG FAQ
1.How can I place an order for SH63N65DM6AG through Aetrix?
Please submit a Request for Quotation (RFQ) for SH63N65DM6AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SH63N65DM6AG reliable?
The price and inventory of SH63N65DM6AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SH63N65DM6AG is usually 5 days.
3.What payment methods are accepted for SH63N65DM6AG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SH63N65DM6AG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SH63N65DM6AG?
SH63N65DM6AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SH63N65DM6AG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SH63N65DM6AG?
For technical support, including SH63N65DM6AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SH63N65DM6AG requirements.
6.How does Aetrix verify that SH63N65DM6AG is sourced from the original manufacturer or authorized distributors?
All SH63N65DM6AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SH63N65DM6AG meets industry standards.
7.What is the process for return or replacement of SH63N65DM6AG?
All SH63N65DM6AG units undergo pre-shipment inspection (PSI). If there is an issue with SH63N65DM6AG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SH63N65DM6AG part is unused and in its original packaging.
Return procedure for SH63N65DM6AG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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