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STMicroelectronics SH68N65DM6AG
- Part No.:
- SH68N65DM6AG
- Manufacturer:
- STMicroelectronics
- Category:
- FET, MOSFET Arrays
- Package:
- 9-PowerSMD
- Datasheet:
-
SH68N65DM6AG.pdf
- Description:
- MOSFET 2N-CH 650V 64A 9ACEPACK
- Quantity:
- Payment:
- Shipping:
Inventory:17
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Product details
Overview
SH68N65DM6AG from STMicroelectronics is an automotive-grade ACEPACK SMIT half-bridge power module integrating two 650 V, 41 mΩ max N-channel MDmesh DM6 MOSFETs in a surface-mount package with isolated thermal pad, rated for 64 A continuous drain current at 25 °C and 3.4 kVrms isolation - used in high-efficiency on-board chargers and traction inverters.
For engineers reviewing the SH68N65DM6AG datasheet, SH68N65DM6AG pinout, SH68N65DM6AG application, or SH68N65DM6AG equivalent, key selection criteria include its 0.33 °C/W junction-to-case thermal resistance, fast 166 ns diode reverse recovery time at 25 °C, 116 nC total gate charge, low 2.6 pF reverse transfer capacitance, and AQG 324 qualification for automotive powertrain systems.
Technical Context
This device implements a monolithic half-bridge topology with two matched high-voltage MOSFET dice mounted on a direct bond copper (DBC) substrate, enabling low thermal resistance and high dv/dt ruggedness of 100 V/ns. Its integrated fast-recovery body diode supports hard-switched and ZVS topologies.
The ACEPACK SMIT package provides top-side isolated thermal pad contact, 9-pin SMD footprint with defined pin functions (DC+, U, DC−, GHS, KHS, GLS, KLS), and supports phase-leg, boost, and single-switch configurations via internal switch interconnection flexibility.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - supports 400 V DC-link systems with 30 % voltage margin for transient overvoltage handling |
| RDS(on) max | 41 mΩ at VGS = 10 V, ID = 23 A - enables <1.5 W conduction loss at 64 A full-load operation |
| ID cont @ TC = 25 °C | 64 A - defines maximum continuous output current capability under ideal heatsink conditions |
| RthJC | 0.33 °C/W - allows 115 °C junction rise with only 38 W dissipation, critical for compact inverter designs |
| VISO | 3.4 kVrms/min - meets reinforced insulation requirements for EV traction and OBC primary-secondary barrier |
| Qg | 116 nC - determines gate driver power requirement and switching speed trade-off in 10–100 kHz range |
| trr @ 25 °C | 166 ns - minimizes commutation losses and EMI during hard-switched inductive turn-off |
Pinout & Package
ACEPACK SMIT is a 9-pin surface-mount power module with isolated top-side thermal pad, 23.0 mm × 32.7 mm footprint, and 4.0 mm height. Pin numbering follows front-side marking orientation per DS14027 Figure 22.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | GHS (High-side Gate) | Drives upper MOSFET gate; requires isolated high-side driver with ≥10 V drive capability |
| 2 | KHS (High-side Source) | Serves as high-side return path and floating reference for gate driver supply |
| 3, 4 | NC | No internal connection; must remain unconnected per design specification |
| 5 | KLS (Low-side Source) | Common source node for low-side MOSFET and system power ground reference |
| 6 | GLS (Low-side Gate) | Drives lower MOSFET gate; referenced to KLS, compatible with standard level-shifted drivers |
| 7 | U (Phase Output) | Half-bridge AC output node; connects to motor winding or transformer primary in inverter/converters |
| 8 | DC− | Negative DC bus terminal; bonded directly to DBC substrate for low-inductance return path |
| 9 | DC+ | Positive DC bus terminal; symmetric layout with DC− ensures balanced current distribution |
Key Features
| Feature | Design Value |
|---|---|
| AQG 324 qualification | Validated for automotive powertrain applications including temperature cycling, humidity, and vibration per ISO 16750 |
| Low package inductance | Minimizes voltage overshoot during di/dt > 1000 A/μs switching events, reducing snubber requirements |
| Dice-on-DBC substrate | Enables 0.33 °C/W RthJC and supports >150 °C continuous junction operation in harsh environments |
| Fast recovery body diode | trr = 166 ns (25 °C) and Qrr = 1.1 µC - reduces reverse recovery losses by >40 % vs standard Si MOSFETs |
| MOSFET dv/dt ruggedness | 100 V/ns - withstands rapid voltage transients without false turn-on in high-noise inverter environments |
Applications
| On-board Charger (OBC) | Traction Inverter |
|---|---|
|
Use Scenario: Bidirectional AC/DC conversion in 11 kW EV on-board chargers operating at 65 kHz PWM frequency. IC Role / Device Role / Timing Role: Half-bridge power stage switching element controlling energy transfer between AC grid and HV battery. Use Value: Low RDS(on) and fast trr reduce conduction and switching losses, enabling >96 % peak efficiency at full load. |
Use Scenario: Three-phase motor drive in 400 V battery electric vehicles with field-oriented control. IC Role / Device Role / Timing Role: Phase-leg switching unit delivering precise PWM-modulated voltage to permanent magnet synchronous motor. Use Value: 3.4 kVrms isolation and AQG 324 compliance ensure functional safety compliance for ASIL-C systems. |
| Industrial UPS | Solar Microinverter |
|
Use Scenario: Double-conversion online UPS with 48 V–400 V DC/DC stage and 50/60 Hz AC output. IC Role / Device Role / Timing Role: High-side/low-side switching pair in LLC resonant converter primary side. Use Value: Low Coss (260 pF) and Crss (2.6 pF) enable zero-voltage switching across wide load range. |
Use Scenario: Single-phase transformerless microinverter converting PV panel DC to grid-synchronized 230 V AC. IC Role / Device Role / Timing Role: H-bridge inverter leg implementing unipolar PWM with active anti-islanding protection. Use Value: Isolated thermal pad and low RthJC allow direct mounting to aluminum heatsink without thermal interface material degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge power module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STGW40H65DFB-4 | 650 V, 40 A, TO-247-4L discrete half-bridge; higher RDS(on) (52 mΩ), no integrated isolation | Requires external isolation and thermal management; suitable for cost-sensitive industrial inverters | Prefer when board-level isolation design and manual thermal interface assembly are acceptable |
| FS820R08A65B | 650 V, 820 A short-circuit rated IGBT module; slower switching (tf = 220 ns), higher VCE(sat) | Targeted at high-current, low-frequency (<16 kHz) traction drives where switching loss is secondary to conduction loss | Prefer for >100 kW motor drives where ruggedness outweighs efficiency demands |
Compared with STGW40H65DFB-4, SH68N65DM6AG delivers 27 % lower conduction loss and eliminates external isolation design effort; versus FS820R08A65B, it enables 4× higher switching frequency with 60 % less switching energy, but requires more complex gate driving.
Availability
SH68N65DM6AG is available at Aetrix Electronics and suitable for on-board chargers, traction inverters, industrial UPS systems, and solar microinverters requiring stable component supply, automotive-grade reliability, and high-power density packaging.
Supply support for SH68N65DM6AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications.
This device belongs to the MDmesh DM6 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in automotive electrification and renewable energy systems.
FAQ
What is the maximum allowable gate-source voltage for SH68N65DM6AG?
The absolute maximum VGS rating is ±25 V, with recommended operating range of –10 V to +15 V for reliable turn-on and robust noise immunity. Exceeding +15 V does not improve RDS(on) significantly but increases gate oxide stress and risk of failure during transients.
Does SH68N65DM6AG require external freewheeling diodes?
No - each MOSFET integrates a fast-recovery body diode with trr = 166 ns (25 °C) and Qrr = 1.1 µC, sufficient for most hard-switched and resonant topologies up to 100 kHz. External diodes are only needed for ultra-low-loss ZVS designs or extreme temperature operation (>125 °C).
How is thermal performance validated for this module?
Thermal resistance is measured per JEDEC JESD51-14 using cold plate testing, yielding RthJC = 0.33 °C/W. The DBC substrate and isolated top-side thermal pad allow direct mounting to heatsinks, and transient impedance curves (Figure 2) confirm stable thermal response under pulsed loads up to 10 ms.
Can SH68N65DM6AG be used in single-switch configuration?
Yes - pins 1–2 (GHS/KHS) and 5–6 (KLS/GLS) can be independently controlled to configure either high-side, low-side, or phase-leg operation. Internal die connections permit re-routing via PCB layout, as confirmed in ST's ACEPACK SMIT application notes for boost and flyback topologies.
SH68N65DM6AG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- ECOPACK®
- Package/Case:
- 9-PowerSMD
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Half Bridge)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 650V
- Current - Continuous Drain (Id) @ 25°C:
- 64A (Tc)
- Rds On (Max) @ Id, Vgs:
- 41mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id:
- 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 116nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5900pF @ 100V
- Power - Max:
- 379W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 9-ACEPACK SMIT
SH68N65DM6AG FAQ
1.How can I place an order for SH68N65DM6AG through Aetrix?
Please submit a Request for Quotation (RFQ) for SH68N65DM6AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SH68N65DM6AG reliable?
The price and inventory of SH68N65DM6AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SH68N65DM6AG is usually 5 days.
3.What payment methods are accepted for SH68N65DM6AG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SH68N65DM6AG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SH68N65DM6AG?
SH68N65DM6AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SH68N65DM6AG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SH68N65DM6AG?
For technical support, including SH68N65DM6AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SH68N65DM6AG requirements.
6.How does Aetrix verify that SH68N65DM6AG is sourced from the original manufacturer or authorized distributors?
All SH68N65DM6AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SH68N65DM6AG meets industry standards.
7.What is the process for return or replacement of SH68N65DM6AG?
All SH68N65DM6AG units undergo pre-shipment inspection (PSI). If there is an issue with SH68N65DM6AG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SH68N65DM6AG part is unused and in its original packaging.
Return procedure for SH68N65DM6AG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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