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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1067X-T1-GE3

Name: SI1067X-T1-GE3
Brand: Vishay Siliconix
SKU: SI1067X-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1067X-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-563, SOT-666

Datasheet:: SI1067X-T1-GE3.pdf

Description:: MOSFET P-CH 20V 1.06A SC89-6

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Product details

Overview

SI1067X-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -20 V drain-source voltage, 0.150 Ω R_DS(on) at V_GS = -4.5 V, and -1.06 A continuous drain current at T_A = 25 °C. It serves as a low-voltage load switch in portable electronics with halogen-free and RoHS-compliant construction.

For engineers reviewing the SI1067X-T1-GE3 datasheet, SI1067X-T1-GE3 pinout, SI1067X-T1-GE3 application, or SI1067X-T1-GE3 equivalent, key selection criteria include its -20 V V_DS, sub-0.17 Ω on-resistance at logic-level gate drive (V_GS = -2.5 V), SC-89 6-lead package footprint, and verified 100 % R_g testing for gate charge consistency.

Technical Context

This device operates as a single P-channel power switch optimized for low-voltage, low-current load switching where gate drive is limited to ≤ -4.5 V. Its threshold voltage range of -0.45 V to -0.95 V enables reliable turn-on with standard logic-level signals, while its 6.0 nC total gate charge supports fast switching in battery-powered systems.

The MOSFET integrates a built-in body diode with 0.8–1.2 V forward voltage at -0.63 A and 12.8–19.2 ns reverse recovery time, making it suitable for unidirectional power path control without external diode supplementation in space-constrained designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for low-voltage DC power rails
R_DS(on)	0.150 Ω at V_GS = -4.5 V - Enables <150 mW conduction loss at 1.06 A
I_D (cont)	-1.06 A at T_A = 25 °C - Supports compact load switching up to ~1 W dissipation
Q_g	6.0 nC at V_GS = -4.5 V - Allows efficient switching with low-drive-strength controllers
V_GS(th)	-0.45 to -0.95 V - Ensures turn-on with common 1.8 V/2.5 V/3.3 V logic outputs
R_thJA	540 °C/W (steady state) - Requires minimal PCB copper for thermal management
C_iss	375 pF - Limits capacitive loading on gate drivers in high-frequency PWM

Pinout & Package

SI1067X-T1-GE3 is housed in an SC-89 (SOT-490) 6-lead surface-mount package with exposed drain pads for thermal performance. Pin assignments are validated per Vishay Document 74322 Rev. D.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5 (D)	Drain	Common high-side power output node; internally connected to exposed pad for thermal conduction
3 (G)	Gate	Control input; requires negative V_GS for turn-on; 100 % R_g tested
6 (S)	Source	Reference terminal for gate drive and load return; ties to system ground or regulated rail

Key Features

Feature	Design Value
TrenchFET® technology	Delivers low R_DS(on) in ultra-small SC-89 package without sacrificing ruggedness
100 % R_g tested	Ensures consistent gate charge and predictable switching timing across production lots
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated markets
Logic-level compatible	Turns fully on with -2.5 V gate drive, enabling direct interface with 2.5 V/3.3 V microcontrollers

Applications

Smartphone Power Management	Wireless Headset Battery Protection
Use Scenario: Isolating backup battery from main PMIC during charging cycles to prevent backfeed and leakage. IC Role / Device Role / Timing Role: High-side load switch controlling power path between Li-ion cell and system rail. Use Value: Low 0.150 Ω R_DS(on) minimizes voltage drop and self-heating during sustained 1 A loads, extending battery runtime.	Use Scenario: Enabling/disabling Bluetooth audio codec supply to reduce standby current in folded earbuds. IC Role / Device Role / Timing Role: Low-quiescent-load power gate activated by baseband processor GPIO. Use Value: -0.95 V maximum V_GS(th) ensures robust turn-on even with aged or low-V_CC logic outputs.
Fitness Tracker Display Backlight Control	Portable Medical Sensor Module
Use Scenario: Sequencing LED backlight power after system boot to avoid inrush-induced brownout. IC Role / Device Role / Timing Role: Controlled power switch placed between buck converter output and LED driver IC. Use Value: 6.0 nC Q_g allows clean, jitter-free enable/disable transitions using standard 10 mA GPIO pins.	Use Scenario: Isolating ECG front-end analog supply from digital subsystem during sleep mode. IC Role / Device Role / Timing Role: Precision power gate ensuring zero leakage (<1 µA IDSS) when off. Use Value: -1 µA max IDSS at V_DS = -20 V guarantees no signal corruption or battery drain over multi-week deployments.

Smartphone Power Management

Wireless Headset Battery Protection

Use Scenario: Isolating backup battery from main PMIC during charging cycles to prevent backfeed and leakage.

IC Role / Device Role / Timing Role: High-side load switch controlling power path between Li-ion cell and system rail.

Use Value: Low 0.150 Ω R_DS(on) minimizes voltage drop and self-heating during sustained 1 A loads, extending battery runtime.

Use Scenario: Enabling/disabling Bluetooth audio codec supply to reduce standby current in folded earbuds.

IC Role / Device Role / Timing Role: Low-quiescent-load power gate activated by baseband processor GPIO.

Use Value: -0.95 V maximum V_GS(th) ensures robust turn-on even with aged or low-V_CC logic outputs.

Fitness Tracker Display Backlight Control

Portable Medical Sensor Module

Use Scenario: Sequencing LED backlight power after system boot to avoid inrush-induced brownout.

IC Role / Device Role / Timing Role: Controlled power switch placed between buck converter output and LED driver IC.

Use Value: 6.0 nC Q_g allows clean, jitter-free enable/disable transitions using standard 10 mA GPIO pins.

Use Scenario: Isolating ECG front-end analog supply from digital subsystem during sleep mode.

IC Role / Device Role / Timing Role: Precision power gate ensuring zero leakage (<1 µA IDSS) when off.

Use Value: -1 µA max IDSS at V_DS = -20 V guarantees no signal corruption or battery drain over multi-week deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1029X-T1-GE3	-20 V V_DS, 0.115 Ω R_DS(on) at -4.5 V, higher 1.3 A I_D, same SC-89 package	Slightly higher current capability; identical pinout and footprint	Select when >1.06 A continuous load current is required without layout change
DMN2020LSD-13	-20 V V_DS, 0.120 Ω R_DS(on) at -4.5 V, 1.7 A I_D, different SOT-26 package (6-lead, but different pin mapping)	Higher current rating but non-pin-compatible; requires PCB redesign	Choose for higher-power portable devices where board space permits re-layout

Compared with SI1067X-T1-GE3, Si1029X-T1-GE3 offers lower on-resistance and higher current in identical packaging, while DMN2020LSD-13 provides greater current headroom at the cost of mechanical incompatibility-making SI1067X-T1-GE3 optimal for strict size-constrained, sub-1.1 A load switching.

Availability

SI1067X-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, wireless headset battery protection, and fitness tracker display backlight control requiring stable component supply and lead-free compliance.

Supply support for SI1067X-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si1067X-T1-GE3 belongs to Vishay's TrenchFET® logic-level P-channel MOSFET family, engineered specifically for space-constrained, battery-operated portable devices demanding low gate drive voltage and minimal conduction loss.

FAQ

What is the maximum continuous drain current for SI1067X-T1-GE3 at 70 °C ambient temperature?

The SI1067X-T1-GE3 supports -0.85 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table under "Continuous Drain Current (T_J = 150 °C)" with derating applied. This reflects thermal limitation due to its 540 °C/W junction-to-ambient resistance on FR4 board.

Does SI1067X-T1-GE3 require a negative gate voltage to operate?

Yes, SI1067X-T1-GE3 is a P-channel MOSFET and requires a gate voltage lower than the source to turn on. For full enhancement, V_GS must be ≤ -2.5 V (typical turn-on threshold is -0.45 V to -0.95 V). Driving the gate to ground while source is at V_IN achieves proper conduction.

Is SI1067X-T1-GE3 suitable for reverse polarity protection?

Yes, SI1067X-T1-GE3 can be used for reverse polarity protection in low-voltage systems. With source tied to input and drain to load, it conducts only when input polarity is correct. Its low R_DS(on) (0.150 Ω) and integrated body diode ensure minimal forward drop and no external diode needed.

What is the gate-to-source leakage current specification for SI1067X-T1-GE3?

The gate-to-source leakage current (I_GSS) for SI1067X-T1-GE3 is ±100 nA maximum at V_GS = ±8 V and T_A = 25 °C, as stated in the Static specifications table. This low leakage preserves gate drive integrity in high-impedance control circuits.

Can SI1067X-T1-GE3 be used in PWM applications?

Yes, SI1067X-T1-GE3 supports PWM operation with verified dynamic parameters: 6.0 nC total gate charge, 14–21 ns turn-on delay, and 22–33 ns rise time at V_GS = -4.5 V. Its 375 pF input capacitance and low R_g enable clean switching up to several hundred kHz in low-duty-cycle power gating.

SI1067X-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 1.06A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 1.06A, 4.5V

Vgs(th) (Max) @ Id:: 950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9.3 nC @ 5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 375 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 236mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-89 (SOT-563F)

SI1067X-T1-GE3 FAQ

1.How can I place an order for SI1067X-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1067X-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1067X-T1-GE3 reliable?

The price and inventory of SI1067X-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1067X-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1067X-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1067X-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1067X-T1-GE3?

SI1067X-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1067X-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1067X-T1-GE3?

For technical support, including SI1067X-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1067X-T1-GE3 requirements.

6.How does Aetrix verify that SI1067X-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1067X-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1067X-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1067X-T1-GE3?

All SI1067X-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1067X-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1067X-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1067X-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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