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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1070X-T1-GE3

Name: SI1070X-T1-GE3
Brand: Vishay Siliconix
SKU: SI1070X-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1070X-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-563, SOT-666

Datasheet:: SI1070X-T1-GE3.pdf

Description:: MOSFET N-CH 30V 1.2A SC89-6

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Product details

Overview

SI1070X-T1-GE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® power MOSFET in SC-89 (SOT-563F) package, rated for 1.2 A continuous drain current at 25 °C, with R_DS(on) = 0.099 Ω at V_GS = 4.5 V and Q_g = 3.5 nC - optimized for low-voltage load switching in portable electronics.

For engineers reviewing the SI1070X-T1-GE3 datasheet, SI1070X-T1-GE3 pinout, SI1070X-T1-GE3 application, or SI1070X-T1-GE3 equivalent, key selection criteria include its 30 V V_DS, 0.099 Ω on-resistance at 4.5 V gate drive, 650 °C/W steady-state thermal resistance, SC-89 6-lead footprint, and halogen-free/RoHS-compliant construction.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(on) and fast switching with Q_g = 3.5 nC at V_GS = 4.5 V and ID = 4.6 A. Its gate threshold voltage (0.7–1.55 V) enables reliable turn-on from 2.5 V logic, while 100 % R_g and UIS testing ensures robustness in transient conditions.

The device integrates a body diode with V_SD = 0.8–1.2 V at I_S = 1.2 A and t_rr = 19.4–29.5 ns, supporting synchronous rectification and flyback recovery in compact DC/DC topologies. Thermal design is constrained by R_thJA = 650 °C/W (steady state) on FR4.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage compatible with 3.3 V/5 V system rails and USB-powered circuits
R_DS(on)	0.099 Ω at V_GS = 4.5 V - enables <120 mW conduction loss at 1.2 A, critical for battery runtime
I_D (cont)	1.2 A at T_A = 25 °C - defines safe DC load-switching capability on minimal PCB area
Q_g	3.5 nC at V_GS = 4.5 V - supports efficient 1–2 MHz switching with low gate-drive power demand
V_GS(th)	0.7–1.55 V - ensures full enhancement with 1.8 V/2.5 V/3.3 V microcontroller GPIOs
R_thJA	650 °C/W (steady state) - requires careful thermal pad layout per SC-89 recommended pads to avoid >125 °C junction rise
C_iss	385 pF - influences gate-drive loop stability and EMI in high-frequency load-switching

Pinout & Package

SC-89 (SOT-563F) 6-lead surface-mount package with exposed drain paddle for thermal performance; dimensions: 1.60 × 1.60 × 0.58 mm (L × W × H), pitch = 0.50 mm.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5	Drain (D)	Common high-current output node; internally connected to exposed paddle for thermal conduction
3	Gate (G)	Control input; requires <3.5 nC charge for full enhancement; sensitive to ESD (±12 V max)
6	Source (S)	Return path for load current; referenced to control logic ground; used for V_GS bias

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.099 Ω R_DS(on) in SC-89 footprint - 30 % lower on-resistance than planar equivalents at same size
100 % R_g and UIS tested	Guarantees gate resistance ≤6.2 Ω and unclamped inductive switching survival up to 4.01 mJ
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - required for consumer portable device certifications
Low V_GS(th) range	0.7–1.55 V threshold enables direct drive from 1.8 V logic without level-shifting circuitry
Body diode t_rr	19.4–29.5 ns reverse recovery time - reduces switching losses in asynchronous buck or boost converters

Applications

Smartphone Power Management	USB-C Port Protection
Use Scenario: Enabling/disabling VBUS or auxiliary power rails during USB enumeration and mode negotiation. IC Role / Device Role / Timing Role: Low-side load switch controlling 5 V power delivery path with <1 µs response to enable signal. Use Value: 0.099 Ω R_DS(on) limits voltage drop to <120 mV at 1.2 A, preserving USB voltage compliance and minimizing self-heating.	Use Scenario: Isolating downstream peripherals from overvoltage or short-circuit events on USB-C VCONN or CC lines. IC Role / Device Role / Timing Role: High-speed protection switch activated within 100 ns of fault detection to prevent damage. Use Value: 3.5 nC Q_g allows rapid turn-off using standard GPIOs, while 30 V rating covers USB-C fault transients up to ±20 V.
Wireless Earbud Battery Charging	IoT Sensor Node Power Gating
Use Scenario: Controlling charging current path between linear charger IC and Li-ion cell during termination and thermal foldback. IC Role / Device Role / Timing Role: Precision current-path MOSFET with tight V_GS(th) distribution enabling accurate 100 mA–1 A cutoff. Use Value: 0.7–1.55 V V_GS(th) ensures consistent turn-on across temperature and process variation, critical for charge-cycle repeatability.	Use Scenario: Cutting power to BLE radio, accelerometer, or environmental sensors during deep-sleep modes to reduce quiescent current. IC Role / Device Role / Timing Role: Ultra-low-leakage load switch with I_DSS ≤1 nA at 30 V, minimizing sleep-mode battery drain. Use Value: 1 nA zero-gate-voltage drain current extends multi-year battery life in coin-cell-powered nodes.

Smartphone Power Management

USB-C Port Protection

Use Scenario: Enabling/disabling VBUS or auxiliary power rails during USB enumeration and mode negotiation.

IC Role / Device Role / Timing Role: Low-side load switch controlling 5 V power delivery path with <1 µs response to enable signal.

Use Value: 0.099 Ω R_DS(on) limits voltage drop to <120 mV at 1.2 A, preserving USB voltage compliance and minimizing self-heating.

Use Scenario: Isolating downstream peripherals from overvoltage or short-circuit events on USB-C VCONN or CC lines.

IC Role / Device Role / Timing Role: High-speed protection switch activated within 100 ns of fault detection to prevent damage.

Use Value: 3.5 nC Q_g allows rapid turn-off using standard GPIOs, while 30 V rating covers USB-C fault transients up to ±20 V.

Wireless Earbud Battery Charging

IoT Sensor Node Power Gating

Use Scenario: Controlling charging current path between linear charger IC and Li-ion cell during termination and thermal foldback.

IC Role / Device Role / Timing Role: Precision current-path MOSFET with tight V_GS(th) distribution enabling accurate 100 mA–1 A cutoff.

Use Value: 0.7–1.55 V V_GS(th) ensures consistent turn-on across temperature and process variation, critical for charge-cycle repeatability.

Use Scenario: Cutting power to BLE radio, accelerometer, or environmental sensors during deep-sleep modes to reduce quiescent current.

IC Role / Device Role / Timing Role: Ultra-low-leakage load switch with I_DSS ≤1 nA at 30 V, minimizing sleep-mode battery drain.

Use Value: 1 nA zero-gate-voltage drain current extends multi-year battery life in coin-cell-powered nodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 0.075 Ω at 4.5 V but rated only for 20 V V_DS; SC-70 package with higher R_thJA = 720 °C/W	Not suitable for 30 V transient-tolerant designs; better for 3.3 V-only systems with tighter R_DS(on) needs	Select when V_DS stress stays below 20 V and thermal margin permits higher R_thJA
AO3414	R_DS(on) = 0.052 Ω at 4.5 V, 30 V rating, SOT-23-3 package; no integrated body diode specs provided	Lacks published t_rr/Q_rr data - unsuitable where body diode recovery impacts efficiency	Prefer for pure low-R_DS(on) switching where body diode behavior is secondary

Compared with DMN2004LK-7 and AO3414, the SI1070X-T1-GE3 offers balanced 30 V capability, verified body diode recovery (t_rr = 19.4 ns), and halogen-free compliance - making it optimal for certified portable devices requiring both voltage margin and switching integrity.

Availability

SI1070X-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, USB-C port protection, and wireless earbud battery charging requiring stable component supply and full RoHS/halogen-free compliance.

Supply support for SI1070X-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The Si1070X product line delivers ultra-small-footprint, low-R_DS(on) N-channel MOSFETs for space-constrained portable electronics where thermal efficiency and regulatory compliance are mandatory.

FAQ

What is the maximum continuous drain current for SI1070X-T1-GE3 at 70 °C ambient?

The SI1070X-T1-GE3 supports 1.0 A continuous drain current at T_A = 70 °C, derated from 1.2 A at 25 °C per its absolute maximum ratings table. This reflects thermal limitation due to R_thJA = 650 °C/W on standard FR4, requiring proper copper pour for higher current operation.

Does SI1070X-T1-GE3 have a specified body diode reverse recovery time?

Yes, the SI1070X-T1-GE3 datasheet specifies t_rr = 19.4–29.5 ns under IF = 3.8 A and dI/dt = 100 A/µs conditions. This value is measured and guaranteed, enabling accurate loss estimation in flyback or synchronous rectifier designs.

What is the gate-source leakage current specification for SI1070X-T1-GE3?

The SI1070X-T1-GE3 has a gate-source leakage current (I_GSS) of ±100 nA maximum at V_GS = ±12 V and T_A = 25 °C. This low leakage supports stable gate bias in high-impedance drive circuits and minimizes standby power loss.

Can SI1070X-T1-GE3 be driven directly by a 1.8 V GPIO?

Yes - the SI1070X-T1-GE3 has a V_GS(th) range of 0.7–1.55 V, ensuring reliable turn-on with 1.8 V logic. At V_GS = 1.8 V, R_DS(on) rises to ~0.25 Ω (inferred from typical curves), sufficient for low-duty-cycle or low-current switching.

What is the marking code for SI1070X-T1-GE3 on the package?

The SI1070X-T1-GE3 is marked with "U" followed by two alphanumeric characters for lot traceability and date code. The "U" identifies the Si1070X base part; full traceability requires cross-referencing the complete top-side marking with Vishay's packaging documentation.

SI1070X-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 1.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 99mOhm @ 1.2A, 4.5V

Vgs(th) (Max) @ Id:: 1.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.3 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 385 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 236mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-89 (SOT-563F)

SI1070X-T1-GE3 FAQ

1.How can I place an order for SI1070X-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1070X-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1070X-T1-GE3 reliable?

The price and inventory of SI1070X-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1070X-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1070X-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1070X-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1070X-T1-GE3?

SI1070X-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1070X-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1070X-T1-GE3?

For technical support, including SI1070X-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1070X-T1-GE3 requirements.

6.How does Aetrix verify that SI1070X-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1070X-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1070X-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1070X-T1-GE3?

All SI1070X-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1070X-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1070X-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1070X-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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