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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1078X-T1-GE3

Name: SI1078X-T1-GE3
Brand: Vishay Siliconix
SKU: SI1078X-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1078X-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-563, SOT-666

Datasheet:: SI1078X-T1-GE3.pdf

Description:: MOSFET N-CH 30V 1.02A SOT563F

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Product details

Overview

SI1078X-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® power MOSFET in SC-89 (SOT-563F) package, rated for 1.02 A continuous drain current at 25 °C, with R_DS(on) of 0.142 Ω at V_GS = 10 V and 0.154 Ω at V_GS = 4.5 V, optimized for low-voltage load switching in portable electronics.

For engineers reviewing the SI1078X-T1-GE3 datasheet, SI1078X-T1-GE3 pinout, SI1078X-T1-GE3 application, or SI1078X-T1-GE3 equivalent, key selection criteria include its 30 V V_DS, sub-0.16 Ω on-resistance at logic-level gate drive, 1.5 nC total gate charge, SC-89 thermal performance (R_thJA = 650 °C/W steady-state), and body diode recovery characteristics (t_rr = 12–20 ns).

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low R_DS(on) with fast switching dynamics: Q_g = 1.5 nC (at V_GS = 4.5 V), t_d(on) = 8 ns, t_f = 23–35 ns, and Crss = 11 pF - enabling efficient operation in high-frequency DC/DC and load-switching circuits.

It features a gate threshold voltage range of 0.6–1.5 V, 100% R_g tested, and ESD robustness of 1400 V (HBM), supporting reliable integration into space-constrained, battery-powered systems where gate drive voltage may be limited to 2.5–4.5 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum drain-source blocking voltage, suitable for 3.3 V and 5 V rail switching with margin.
R_DS(on) @ V_GS = 4.5 V	0.154 Ω max - enables <150 mW conduction loss at 1 A, critical for thermally constrained portable PCBs.
I_D (continuous, T_A = 25 °C)	1.02 A - defines usable current capacity on standard FR4 without forced airflow or heatsinking.
Q_g (V_GS = 4.5 V)	1.5 nC typical - reduces gate driver power demand and switching transition time in low-power control circuits.
t_rr (body diode)	12–20 ns - supports synchronous rectification and bidirectional current handling with minimal reverse recovery loss.
R_thJA (steady state)	650 °C/W - sets thermal derating limit: max 0.24 W dissipation before junction exceeds 150 °C ambient.
V_GS(th)	0.6–1.5 V - ensures turn-on compatibility with 1.8 V, 2.5 V, and 3.3 V microcontroller GPIOs.

Pinout & Package

SC-89 (SOT-563F) surface-mount package: 1.6 mm × 1.6 mm × 0.55 mm footprint, 6-lead single-die configuration with exposed drain pad for thermal enhancement. Lead finish: lead (Pb)-free and halogen-free per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 6	Drain (D)	Common high-current output node; internally connected to exposed die pad for improved thermal conduction to PCB copper.
3	Gate (G)	Control input; requires ≤±12 V rating; low 1.04–5.6 Ω gate resistance minimizes ringing during fast switching.
5	Source (S)	Reference node for gate drive and current return path; tied to system ground in low-side switch configurations.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × area efficiency in SC-89, reducing board space vs. comparable SOT-23 devices.
100% R_g tested	Ensures consistent gate drive timing and eliminates batch-to-batch variation in switching speed and EMI profile.
ESD rating: 1400 V HBM	Enables direct handling and assembly without special ESD precautions in standard production environments.
Logic-level gate drive	Turns fully on with V_GS ≥ 2.5 V, eliminating need for level-shifters when driven by modern low-voltage MCUs and PMICs.
Low Q_gd/Q_gs ratio	0.42 nC / 0.2 nC = 2.1 - improves hard-switching immunity and reduces Miller-induced shoot-through risk in half-bridge layouts.

Applications

Battery Protection Circuit	USB Port Power Switch
Use Scenario: Isolates main Li-ion battery from charging circuitry during overvoltage or overtemperature fault conditions. IC Role / Device Role / Timing Role: Low-side load switch controlled by protection IC's fault signal; operates in static on/off mode with <10 μs response. Use Value: 0.154 Ω R_DS(on) at 4.5 V gate drive limits voltage drop to <154 mV at 1 A, preserving battery runtime and minimizing heat buildup in sealed enclosures.	Use Scenario: Enables/disables 5 V power delivery to downstream USB peripherals in smartphones and tablets. IC Role / Device Role / Timing Role: High-side or low-side power FET controlled by USB controller GPIO; must support hot-plug sequencing and inrush limiting. Use Value: 1.5 nC Q_g allows clean, fast turn-on (<16 ns td(on)) with minimal gate driver loading, preventing brown-out during plug-in events.
Power-Path Management	Always-On Sensor Node Supply
Use Scenario: Selects between wall adapter and battery sources in portable medical monitors and handheld test equipment. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET pair (with external gate control) for bidirectional blocking and seamless switchover. Use Value: Body diode V_SD = 0.75–1.2 V and t_rr = 12–20 ns enable low-loss reverse conduction during transition, reducing voltage glitch and system reset risk.	Use Scenario: Powers ultra-low-power environmental sensors (e.g., temperature/humidity) from coin-cell batteries with multi-year lifetime requirements. IC Role / Device Role / Timing Role: Always-on load switch isolating sensor supply from MCU sleep domains; biased in linear region for precise current regulation. Use Value: V_GS(th) = 0.6–1.5 V allows stable biasing with simple resistor-divider networks, while 1 μA I_GSS at 4.5 V ensures negligible leakage current drain.

Battery Protection Circuit

USB Port Power Switch

Use Scenario: Isolates main Li-ion battery from charging circuitry during overvoltage or overtemperature fault conditions.

IC Role / Device Role / Timing Role: Low-side load switch controlled by protection IC's fault signal; operates in static on/off mode with <10 μs response.

Use Value: 0.154 Ω R_DS(on) at 4.5 V gate drive limits voltage drop to <154 mV at 1 A, preserving battery runtime and minimizing heat buildup in sealed enclosures.

Use Scenario: Enables/disables 5 V power delivery to downstream USB peripherals in smartphones and tablets.

IC Role / Device Role / Timing Role: High-side or low-side power FET controlled by USB controller GPIO; must support hot-plug sequencing and inrush limiting.

Use Value: 1.5 nC Q_g allows clean, fast turn-on (<16 ns td(on)) with minimal gate driver loading, preventing brown-out during plug-in events.

Power-Path Management

Always-On Sensor Node Supply

Use Scenario: Selects between wall adapter and battery sources in portable medical monitors and handheld test equipment.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET pair (with external gate control) for bidirectional blocking and seamless switchover.

Use Value: Body diode V_SD = 0.75–1.2 V and t_rr = 12–20 ns enable low-loss reverse conduction during transition, reducing voltage glitch and system reset risk.

Use Scenario: Powers ultra-low-power environmental sensors (e.g., temperature/humidity) from coin-cell batteries with multi-year lifetime requirements.

IC Role / Device Role / Timing Role: Always-on load switch isolating sensor supply from MCU sleep domains; biased in linear region for precise current regulation.

Use Value: V_GS(th) = 0.6–1.5 V allows stable biasing with simple resistor-divider networks, while 1 μA I_GSS at 4.5 V ensures negligible leakage current drain.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 0.125 Ω @ 4.5 V, higher I_D = 2.8 A, same SC-89 package but different pinout (G/S/D layout differs).	Higher current capability suits higher-power USB PD sink designs; not pin-compatible due to G/S/D terminal reordering.	Select DMN2004LK-7 only if redesigning layout to accommodate revised pin mapping and verifying gate drive strength for 2.8 A loads.
AO3400	R_DS(on) = 0.042 Ω @ 10 V but 0.16 Ω @ 4.5 V; SOT-23 package, larger footprint and worse thermal resistance (R_thJA ≈ 200 °C/W).	Lower on-resistance at 10 V ideal for fixed-rail applications; unsuitable for space-constrained portable designs requiring SC-89 footprint.	Choose AO3400 only when board area permits SOT-23 and gate drive is guaranteed ≥10 V; otherwise SI1078X-T1-GE3 offers better size/performance balance.

Compared with DMN2004LK-7 and AO3400, SI1078X-T1-GE3 delivers optimal trade-off of SC-89 footprint, logic-level compatibility down to 2.5 V, and verified 1400 V HBM ESD robustness - making it preferred for compact, battery-operated load-switching where layout reuse and reliability under handling stress are critical.

Availability

SI1078X-T1-GE3 is available at Aetrix Electronics and suitable for portable medical devices, USB-C accessory power management, and always-on IoT sensor nodes requiring stable component supply across long production lifecycles.

Supply support for SI1078X-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and miniaturized solutions.

The SI1078X series belongs to Vishay's TrenchFET® logic-level MOSFET product line, engineered specifically for space-constrained, battery-powered applications demanding low gate-threshold operation and robust thermal performance in ultra-small packages.

FAQ

What is the maximum continuous drain current for SI1078X-T1-GE3 at 70 °C ambient temperature?

The SI1078X-T1-GE3 supports 0.82 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SC-89 package under natural convection; actual usable current depends on PCB copper area and airflow. The SI1078X-T1-GE3 datasheet confirms this value under "Continuous Drain Current (T_J = 150 °C)" with footnote a and b referencing surface-mounted 1" × 1" FR4 board conditions.

Does SI1078X-T1-GE3 support gate drive voltages below 2.5 V?

The SI1078X-T1-GE3 has a minimum gate threshold voltage of 0.6 V, but its R_DS(on) is not characterized below V_GS = 2.5 V. At 2.5 V, R_DS(on) is 0.195 Ω max (ID = 0.5 A); operation below 2.5 V results in significantly higher on-resistance and unpredictable channel conduction. For reliable switching, SI1078X-T1-GE3 should be driven at ≥2.5 V - consistent with its logic-level design intent and documented specifications.

What is the thermal resistance junction-to-ambient for SI1078X-T1-GE3 under steady-state conditions?

The SI1078X-T1-GE3 has a maximum steady-state junction-to-ambient thermal resistance (R_thJA) of 650 °C/W, as stated in the Thermal Resistance Ratings table. This value assumes mounting on a 1" × 1" FR4 board with no additional copper pour or airflow. The typical R_thJA is 540 °C/W. These figures directly determine safe power dissipation limits: at 25 °C ambient, max P_D = (150 − 25) / 650 ≈ 0.192 W for junction temperature ≤150 °C - matching the datasheet's 0.24 W rating at 25 °C with safety margin.

Is SI1078X-T1-GE3 pin-compatible with other SC-89 MOSFETs like Si1061X-T1-GE3?

No - SI1078X-T1-GE3 is not pin-compatible with Si1061X-T1-GE3 or other SC-89 MOSFETs outside its specific variant group. While both use the SC-89 package, SI1078X-T1-GE3 has pins 1/2/4/6 as Drain, pin 3 as Gate, and pin 5 as Source; Si1061X-T1-GE3 uses a different internal connection scheme. Pinout validation is confirmed in the "Top View" diagram of the SI1078X datasheet (S16-1056-Rev. A), and no cross-reference indicates shared pin mapping across Vishay's SC-89 MOSFET families.

What is the body diode forward voltage of SI1078X-T1-GE3 at 0.8 A source current?

The SI1078X-T1-GE3 body diode forward voltage (V_SD) is 0.75–1.2 V at I_S = 0.8 A and T_J = 25 °C, per the Drain-Source Body Diode Characteristics table. This range accounts for process variation and temperature effects; at elevated junction temperatures (e.g., 125 °C), V_SD decreases to ~0.6 V. This diode is integral to the MOSFET structure and supports reverse current paths in power-path and flyback applications - a key parameter for evaluating conduction loss in bidirectional topologies using SI1078X-T1-GE3.

SI1078X-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 1.02A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 142mOhm @ 1A, 10V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 3 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 110 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 240mW (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: -

SI1078X-T1-GE3 FAQ

1.How can I place an order for SI1078X-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1078X-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1078X-T1-GE3 reliable?

The price and inventory of SI1078X-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1078X-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1078X-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1078X-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1078X-T1-GE3?

SI1078X-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1078X-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1078X-T1-GE3?

For technical support, including SI1078X-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1078X-T1-GE3 requirements.

6.How does Aetrix verify that SI1078X-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1078X-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1078X-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1078X-T1-GE3?

All SI1078X-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1078X-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1078X-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1078X-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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