My Inquiry
My Account
Vishay Siliconix SI1300BDL-T1-GE3
- Part No.:
- SI1300BDL-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SC-70, SOT-323
- Datasheet:
-
SI1300BDL-T1-GE3.pdf
- Description:
- MOSFET N-CH 20V 400MA SC70-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,140
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI1300BDL-T1-GE3 from Vishay Siliconix is an N-channel 20 V TrenchFET® power MOSFET in SC-70 package, rated for 0.4 A continuous drain current at TC = 25 °C, with RDS(on) = 0.85 Ω at VGS = 4.5 V and 0.335 nC total gate charge. It serves as a low-side load switch in space-constrained portable electronics.
For engineers reviewing the SI1300BDL-T1-GE3 datasheet, SI1300BDL-T1-GE3 pinout, SI1300BDL-T1-GE3 application, or SI1300BDL-T1-GE3 equivalent, key selection criteria include its halogen-free and RoHS-compliant construction, low gate charge for fast switching in battery-powered systems, and thermal resistance profile suitable for FR4 PCB mounting without heatsinking.
Technical Context
This MOSFET uses trench-based silicon architecture to achieve low on-resistance and fast switching performance in a 3-pin surface-mount package. Its gate threshold voltage (0.4–1.0 V) enables direct drive from 1.8 V and 2.5 V logic, while the 0.335 nC Qg at VGS = 2.5 V supports efficient operation in high-frequency PWM control.
The device features 100 % Rg tested units and integrates a body diode with VSD = 0.7–1.2 V at IS = 0.05 A. Absolute maximum ratings include ±8 V gate-source voltage and -55 to +150 °C operating junction temperature, supporting industrial and extended-temperature portable designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum drain-source blocking voltage for low-voltage DC/DC and load-switch applications |
| RDS(on) | 0.85 Ω at VGS = 4.5 V - Enables <100 mW conduction loss at 0.4 A, suitable for compact battery management |
| ID (cont.) | 0.4 A at TC = 25 °C - Continuous current rating for thermally limited SC-70 footprint |
| Qg | 0.335 nC at VGS = 2.5 V - Low gate charge minimizes driver power and switching losses in 1–5 MHz PWM |
| PD | 0.19 W at TA = 25 °C - Power dissipation limit on standard FR4 board, defining thermal derating envelope |
| RthJA | 670 °C/W max - High junction-to-ambient resistance confirms need for layout-aware thermal design |
Pinout & Package
SC-70 (3-lead) surface-mount package with exposed drain pad for thermal conduction. Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain (top view).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal accepting 0.4–1.0 V threshold logic; requires <12 Ω series gate resistor for EMI control |
| S | Source | Reference node for gate drive and current return path; tied to system ground in low-side configuration |
| D | Drain | High-side connection to load; electrically and thermally coupled to package backside for heat sinking |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables sub-1 Ω RDS(on) in SC-70, reducing conduction loss vs. planar MOSFETs of same size |
| Halogen-free construction | Meets IEC 61249-2-21, eliminating brominated flame retardants for safer end-of-life processing |
| 100 % Rg tested | Guarantees gate resistance between 1.5–12 Ω, ensuring consistent turn-on timing across production lots |
| RoHS compliance | Fully compliant with Directive 2002/95/EC, enabling use in EU consumer and industrial markets |
Applications
| Battery Protection Circuit | USB Port Power Switch |
|---|---|
Use Scenario: Isolates Li-ion cell during overvoltage or overtemperature fault conditions in single-cell packs. IC Role / Device Role / Timing Role: Low-side protection switch controlled by battery management IC; operates in static on/off mode with <1 µs response. Use Value: 0.85 Ω RDS(on) limits voltage drop to <340 mV at 0.4 A, preserving pack efficiency and runtime. | Use Scenario: Enables/disables 5 V power delivery to downstream USB peripherals in portable hubs and dongles. IC Role / Device Role / Timing Role: Load switch driven by microcontroller GPIO; toggled at <1 Hz during plug/unplug detection. Use Value: 0.335 nC Qg allows full turn-on with <1 mA peak gate current from 3.3 V MCU, avoiding external driver. |
| LED Backlight Dimming | IoT Sensor Node Power Gating |
Use Scenario: PWM-controlled current sink for white LED strings in compact displays. IC Role / Device Role / Timing Role: Synchronous low-side switch in constant-current LED driver; switched at 1–5 kHz. Use Value: Fast 7–12 ns turn-on delay and 10–15 ns rise time support clean PWM edges without overshoot. | Use Scenario: Powers down non-critical sensors (e.g., humidity, ambient light) between wake cycles in battery-operated nodes. IC Role / Device Role / Timing Role: Standby power switch controlled by ultra-low-power MCU; activated every 10–60 s. Use Value: 100 nA IDSS at 20 V ensures <2 nW leakage per switch, extending multi-year battery life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | RDS(on) = 0.65 Ω at VGS = 4.5 V; higher ID = 0.55 A; SOT-23 package | Higher current capacity suits 500 mA loads but requires larger PCB area | Select when >0.4 A continuous current or lower on-resistance is required, accepting SOT-23 footprint |
| AO3400 | RDS(on) = 0.042 Ω at VGS = 10 V; not specified at 2.5 V; SOT-23 package | Requires ≥4.5 V gate drive; unsuitable for 1.8 V/2.5 V logic interfaces | Choose only if system provides ≥4.5 V gate voltage and needs sub-50 mΩ RDS(on) |
Compared with DMN2004LK-7 and AO3400, SI1300BDL-T1-GE3 uniquely balances ultra-low gate charge (0.335 nC), 2.5 V logic compatibility, and halogen-free compliance in SC-70-making it optimal for miniaturized, low-power, and environmentally regulated designs where gate drive voltage and footprint are constrained.
Availability
SI1300BDL-T1-GE3 is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, LED backlight dimming, and IoT sensor node power gating requiring stable component supply and long-term lifecycle assurance.
Supply support for SI1300BDL-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on reliability and power efficiency.
The Si1300BDL product line delivers ultra-small-signal N-channel MOSFETs optimized for space-constrained, low-voltage, low-power switching in portable and wearable electronics.
FAQ
What is the maximum gate-source voltage rating for SI1300BDL-T1-GE3?
The SI1300BDL-T1-GE3 has a maximum gate-source voltage rating of ±8 V, as specified in its absolute maximum ratings table. Exceeding this voltage risks permanent gate oxide damage. This rating supports compatibility with 3.3 V, 2.5 V, and 1.8 V logic families when using appropriate gate drive limiting resistors or clamping circuits. The SI1300BDL-T1-GE3 must never be subjected to transient spikes beyond ±8 V, even briefly.
Does SI1300BDL-T1-GE3 support direct drive from a 1.8 V microcontroller GPIO?
Yes, SI1300BDL-T1-GE3 supports direct drive from a 1.8 V microcontroller GPIO due to its guaranteed gate threshold voltage range of 0.4–1.0 V at ID = 250 µA. At VGS = 1.8 V, the device achieves sufficient enhancement for low-current switching, though RDS(on) increases to ~1.3 Ω. For robust 0.4 A operation, VGS ≥ 2.5 V is recommended. The SI1300BDL-T1-GE3 datasheet confirms functionality down to 2.5 V, with characterization data provided at that level.
What is the thermal resistance from junction to ambient for SI1300BDL-T1-GE3 on a standard PCB?
The maximum junction-to-ambient thermal resistance (RthJA) for SI1300BDL-T1-GE3 is 670 °C/W when mounted on a 1" × 1" FR4 board, per the datasheet's thermal resistance ratings table. This value reflects worst-case convection-only cooling and confirms the device's suitability for low-duty-cycle or intermittent operation. The SI1300BDL-T1-GE3 achieves this rating without copper pour or thermal vias, but adding them reduces effective RthJA significantly.
Is SI1300BDL-T1-GE3 suitable for reverse polarity protection?
No, SI1300BDL-T1-GE3 is not suitable for reverse polarity protection because it is an N-channel MOSFET intended for low-side switching. In that configuration, its body diode conducts during reverse input, causing failure. Reverse polarity protection requires a P-channel device in high-side configuration or an N-channel with external gate charge pump. The SI1300BDL-T1-GE3 datasheet does not specify body diode forward voltage under reverse bias stress, confirming its unsuitability for this topology.
What marking code appears on the top of the SI1300BDL-T1-GE3 package?
The SI1300BDL-T1-GE3 is marked with "KE" followed by two alphanumeric characters (e.g., KEAB) representing lot traceability and date code, as shown in the package outline diagram on page 1 of the Vishay datasheet (Document Number: 73557). The "KE" prefix is unique to the Si1300BDL family and distinguishes it from other SC-70 MOSFETs. No additional part number or manufacturer logo is printed on the device surface.
SI1300BDL-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 400mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 850mOhm @ 250mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.84 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 35 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190mW (Ta), 200mW (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-3
SI1300BDL-T1-GE3 FAQ
1.How can I place an order for SI1300BDL-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI1300BDL-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI1300BDL-T1-GE3 reliable?
The price and inventory of SI1300BDL-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1300BDL-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI1300BDL-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1300BDL-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI1300BDL-T1-GE3?
SI1300BDL-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI1300BDL-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI1300BDL-T1-GE3?
For technical support, including SI1300BDL-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1300BDL-T1-GE3 requirements.
6.How does Aetrix verify that SI1300BDL-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI1300BDL-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1300BDL-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI1300BDL-T1-GE3?
All SI1300BDL-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1300BDL-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI1300BDL-T1-GE3 part is unused and in its original packaging.
Return procedure for SI1300BDL-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI1300BDL-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
