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Vishay Siliconix SI1330EDL-T1-GE3
- Part No.:
- SI1330EDL-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SC-70, SOT-323
- Datasheet:
-
SI1330EDL-T1-GE3.pdf
- Description:
- MOSFET N-CH 60V 240MA SC70-3
- Quantity:
- Payment:
- Shipping:
Inventory:7,289
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Product details
Overview
SI1330EDL-T1-GE3 from Vishay Siliconix is a halogen-free, RoHS-compliant N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, with RDS(on) of 2.5 Ω at VGS = 10 V and 8 Ω at VGS = 3 V, delivering 0.25 A continuous drain current at 25 °C - used as a P-channel driver in notebook PC and server power management circuits.
For engineers reviewing the SI1330EDL-T1-GE3 datasheet, SI1330EDL-T1-GE3 pinout, SI1330EDL-T1-GE3 application, or SI1330EDL-T1-GE3 equivalent, key selection criteria include low-voltage gate drive capability (3 V operation), ESD protection (2000 V HBM), SOT-323 package thermal resistance, and verified RDS(on) performance across temperature.
Technical Context
This device implements a trench-based silicon process optimized for low gate charge (0.4–0.6 nC) and fast switching (td(on) = 3.8 ns, td(off) = 12.8 ns), enabling efficient low-duty-cycle load switching in compact DC-DC bias rails. Its gate threshold voltage (1.0–2.5 V) ensures reliable turn-on with 3.3 V logic-level signals.
The integrated body diode exhibits VSD = 0.83–1.2 V at IS = 0.23 A and supports synchronous rectification in low-current auxiliary paths. Thermal design relies on RthJA = 400 °C/W (max, steady state) and RthJF = 340 °C/W (max), validated on 1" × 1" FR4 board.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - maximum blocking voltage for high-side switch applications in 24 V and 48 V subsystems |
| RDS(on) @ VGS = 3 V | 8 Ω - enables direct drive from 3.3 V microcontroller GPIO without level-shifting |
| ID (continuous, 25 °C) | 0.25 A - suitable for low-power enable/control functions, not main power switching |
| Qg | 0.4–0.6 nC - minimizes gate drive power loss in high-frequency PWM control |
| VGS(th) | 1.0–2.5 V - guarantees turn-on with standard logic outputs and provides noise margin |
| ESD Rating (HBM) | 2000 V - protects against handling damage during board assembly and rework |
| TJ Range | −55 to +150 °C - supports operation in industrial and computing environments with local heating |
Pinout & Package
SI1330EDL-T1-GE3 is housed in a surface-mount SOT-323 (SC-70) 3-lead package with exposed drain pad for thermal conduction. The package measures 2.2 mm × 2.2 mm × 0.95 mm and is compatible with standard reflow profiles for lead-free and halogen-free assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control input requiring ≤ ±20 V rating; driven by logic-level signal with minimal gate charge demand |
| S | Source | Reference node for gate drive; tied to system ground or low-side return path in high-side configuration |
| D | Drain | High-voltage output terminal; electrically and thermally connected to PCB copper pour via exposed pad |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables low RDS(on) at 3 V gate drive while maintaining ruggedness and avalanche capability |
| Halogen-free construction | Meets IEC 61249-2-21 requirements for environmentally sensitive end equipment |
| ESD protection (2000 V HBM) | Eliminates need for external ESD clamps in low-pin-count control circuits |
| RoHS-compliant packaging | Supports global compliance without material declaration exceptions or exemptions |
Applications
| Notebook PC Power Sequencing | Server VRM Auxiliary Control |
|---|---|
Use Scenario: Enabling/disabling secondary voltage rails (e.g., +1.8 V, +3.3 V) during boot-up and sleep transitions. IC Role / Device Role / Timing Role: Low-side switch controlling power delivery to DDR memory termination or PCIe slot standby circuitry. Use Value: 3 V gate compatibility allows direct MCU GPIO control; 8 Ω RDS(on) limits voltage drop to <160 mV at 20 mA load. | Use Scenario: Isolating feedback or enable signals between PMBus-controlled VRMs and host controller. IC Role / Device Role / Timing Role: Signal-level switch decoupling digital control lines to prevent cross-talk during dynamic load changes. Use Value: Fast 12.8 ns turn-off time ensures clean signal edge integrity; 2000 V ESD rating prevents latch-up during hot-plug events. |
| USB-C Port Power Switching | Industrial Sensor Bias Supply |
Use Scenario: Controlling VBUS power delivery to USB-C downstream ports based on enumeration status. IC Role / Device Role / Timing Role: High-side load switch managing up to 500 mA per port under USB 2.0/3.2 power rules. Use Value: 60 V VDS headroom accommodates transient overshoot; SOT-323 footprint saves space in dense Type-C controller layouts. | Use Scenario: Providing regulated bias to analog sensor front-ends (e.g., RTD, thermistor bridges) in programmable logic controllers. IC Role / Device Role / Timing Role: Precision on/off control of excitation current sources with minimal thermal drift impact. Use Value: −55 to +150 °C operating range ensures stability across ambient extremes; low gate charge reduces control timing jitter. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | RDS(on) = 3.5 Ω @ VGS = 2.5 V; higher gate charge (0.9 nC); SOT-23 package | Requires stronger gate drive; less suitable for 3 V-only systems | Prefer when lower RDS(on) at ultra-low VGS outweighs gate drive overhead |
| AO3400 | RDS(on) = 0.042 Ω @ VGS = 10 V; 1.4 A ID; larger SOT-23-3 footprint | Higher current capacity but incompatible with 3 V logic without level shift | Select for higher-power loads where gate drive voltage ≥4.5 V is available |
Compared with DMN2004LK-7 and AO3400, SI1330EDL-T1-GE3 uniquely balances 3 V operability, halogen-free compliance, and SOT-323 miniaturization - making it optimal for space-constrained, low-power enable functions where gate drive voltage is limited and environmental compliance is mandatory.
Availability
SI1330EDL-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC power sequencing, server VRM auxiliary control, and USB-C port power switching requiring stable component supply, full halogen-free compliance, and consistent SOT-323 packaging.
Supply support for SI1330EDL-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and miniaturization.
The Si1330EDL series targets low-power, logic-level switching applications in portable and enterprise computing platforms, prioritizing gate-drive simplicity, thermal efficiency in small packages, and environmental compliance.
FAQ
What is the maximum gate-source voltage rating for SI1330EDL-T1-GE3?
The SI1330EDL-T1-GE3 has a maximum gate-source voltage rating of ±20 V, as specified in its absolute maximum ratings table. This rating applies across the full operating temperature range and must not be exceeded to avoid permanent gate oxide damage. The device is designed for robust operation with standard 3.3 V and 5 V logic interfaces, and its 1.0–2.5 V gate threshold ensures safe margin below the ±20 V limit. Always observe this limit during both static handling and dynamic switching conditions.
Does SI1330EDL-T1-GE3 support 3 V logic-level gate drive?
Yes, SI1330EDL-T1-GE3 supports true 3 V logic-level gate drive: its RDS(on) is specified at 8 Ω with VGS = 3 V and ID = 25 mA, and its gate threshold voltage ranges from 1.0 V to 2.5 V. This ensures reliable turn-on with 3.3 V CMOS outputs, even under worst-case temperature and process variations. The low gate charge (0.4–0.6 nC) further reduces required drive strength, making SI1330EDL-T1-GE3 well-suited for direct microcontroller GPIO control without external level-shifting circuitry.
What is the thermal resistance from junction to ambient for SI1330EDL-T1-GE3?
The maximum junction-to-ambient thermal resistance (RthJA) for SI1330EDL-T1-GE3 is 450 °C/W under steady-state conditions on a 1" × 1" FR4 board, per the Vishay datasheet. The typical value is 380 °C/W. This parameter assumes standard JEDEC test conditions and defines the worst-case temperature rise per watt of dissipated power. For accurate thermal design, users should verify layout-dependent RthJA using actual PCB copper area and airflow, as real-world values may differ significantly from the datasheet reference.
Is SI1330EDL-T1-GE3 suitable for high-frequency PWM applications?
SI1330EDL-T1-GE3 is suitable for moderate-frequency PWM applications up to ~1 MHz due to its low total gate charge (0.4–0.6 nC) and fast switching times (td(on) = 3.8 ns, td(off) = 12.8 ns). However, its 8 Ω RDS(on) at 3 V limits usable current to ~25 mA before significant conduction loss occurs. It is best applied in low-duty-cycle enable/disable functions rather than continuous high-frequency power conversion. For higher current or higher frequency use, consider devices with lower RDS(on) and optimized gate structure.
How does the halogen-free designation affect SI1330EDL-T1-GE3's reliability or soldering profile?
The halogen-free designation of SI1330EDL-T1-GE3 refers solely to material composition (compliance with IEC 61249-2-21) and does not alter its electrical specifications, thermal behavior, or recommended soldering profile. Vishay qualifies the device for standard lead-free reflow per J-STD-020, with peak temperature up to 260 °C. Reliability data-including HTOL, TC, and HAST-remain unchanged versus non-halogen-free variants. No derating or process adjustment is required for manufacturing or field operation.
SI1330EDL-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 240mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 3V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.5Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 280mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-3
SI1330EDL-T1-GE3 FAQ
1.How can I place an order for SI1330EDL-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI1330EDL-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI1330EDL-T1-GE3 reliable?
The price and inventory of SI1330EDL-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1330EDL-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI1330EDL-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1330EDL-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI1330EDL-T1-GE3?
SI1330EDL-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI1330EDL-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI1330EDL-T1-GE3?
For technical support, including SI1330EDL-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1330EDL-T1-GE3 requirements.
6.How does Aetrix verify that SI1330EDL-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI1330EDL-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1330EDL-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI1330EDL-T1-GE3?
All SI1330EDL-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1330EDL-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI1330EDL-T1-GE3 part is unused and in its original packaging.
Return procedure for SI1330EDL-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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