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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1403BDL-T1-GE3

Name: SI1403BDL-T1-GE3
Brand: Vishay Siliconix
SKU: SI1403BDL-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1403BDL-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1403BDL-T1-GE3.pdf

Description:: MOSFET P-CH 20V 1.5A SC70-6

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Product details

Overview

SI1403BDL-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET in SC-70 (SOT-363) package, rated for -20 V V_DS, 0.150 Ω R_DS(on) at V_GS = -4.5 V, 1.5 A continuous drain current, and optimized for low-voltage load switching in space-constrained portable electronics.

For engineers reviewing the SI1403BDL-T1-GE3 datasheet, SI1403BDL-T1-GE3 pinout, SI1403BDL-T1-GE3 application, or SI1403BDL-T1-GE3 equivalent, key selection criteria include its -2.5 V gate threshold compatibility with 2.5 V logic, 2.9 nC total gate charge for fast switching, and four-drain-terminal SC-70 package enabling improved thermal resistance (R_thJA = 180 °C/W typical) versus 3-pin alternatives.

Technical Context

This device implements a single P-channel enhancement-mode MOSFET using trench-gate silicon technology, with gate threshold voltage specified between -0.6 V and -1.3 V to ensure reliable turn-on with 2.5 V–3.3 V microcontroller outputs. Its body diode exhibits V_SD = -0.8 V typical at -0.8 A, supporting synchronous rectification in buck converters.

Dynamic performance is defined by Q_g = 2.9 nC (typ), Q_gd = 1.0 nC (typ), and switching times of t_d(on) = 13 ns, t_r = 30 ns, t_d(off) = 28 ns, t_f = 13 ns under standard test conditions (V_DD = -10 V, R_g = 6 Ω), enabling efficient operation up to several hundred kHz in DC-DC applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for low-side switch or high-side load switch in 12 V or lower systems
R_DS(on) @ V_GS = -4.5 V	0.150 Ω max - Enables <100 mW conduction loss at 0.8 A, suitable for battery-powered load control
I_D Continuous (T_A = 25 °C)	-1.5 A - Sustains 1.5 A DC load current with 0.625 W power dissipation on standard FR4 board
Q_g Total Gate Charge	2.9 nC typ - Low drive power requirement compatible with GPIOs of ultra-low-power MCUs
V_GS(th)	-0.6 to -1.3 V - Ensures full enhancement with 2.5 V logic-level gate drive without level-shifting
R_thJA (Steady State)	180 °C/W max - Achieves 150 °C junction temperature with 0.568 W dissipation at 25 °C ambient
Package	SOT-363 / SC-70 (6-lead) - Four drain terminals reduce thermal resistance and improve current sharing vs. 3-lead SC-70

Pinout & Package

SI1403BDL-T1-GE3 uses the SC-70 (SOT-363) 6-lead surface-mount package with exposed drain pads. The package measures 2.00 mm × 2.10 mm × 1.00 mm (D × E × A2) and features four dedicated drain terminals for enhanced thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 6	Drain (D)	Four parallel drain connections reduce effective R_DS(on) and lower junction-to-ambient thermal resistance
3	Gate (G)	Control terminal accepting -2.5 V to -12 V gate drive; threshold centered at -0.95 V
5	Source (S)	Reference node for gate drive and load return path; tied to system ground in high-side switch configuration

Key Features

Feature	Design Value
TrenchFET® process technology	Enables low R_DS(on) at -2.5 V gate drive while maintaining robust avalanche rating and long-term reliability
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B, eliminating hazardous substances without derating
Four-drain SC-70 package	Reduces R_thJA by ~50% vs. 3-pin SC-70, allowing 0.568 W dissipation at 25 °C ambient instead of ~0.35 W
Low gate charge (Q_g = 2.9 nC)	Minimizes switching losses and driver power consumption in battery-operated devices with frequent on/off cycling
Specified R_DS(on) down to V_GS = -2.5 V	Guarantees 0.265 Ω max conduction resistance when driven directly from 2.5 V logic, eliminating level shifters

Applications

Battery Protection Circuit	USB Port Power Switch
Use Scenario: Reverse-current blocking and overcurrent shutdown in Li-ion battery packs with integrated protection ICs. IC Role / Device Role: High-side P-channel MOSFET used as back-to-back switch to prevent reverse discharge and enable controlled load disconnect. Use Value: -20 V rating withstands battery stack transients; 0.150 Ω R_DS(on) limits voltage drop to <120 mV at 0.8 A, preserving pack efficiency.	Use Scenario: Hot-swap power control for USB 2.0 downstream ports in portable hubs and docking stations. IC Role / Device Role: Load switch isolating VBUS from peripheral devices during insertion/removal or fault conditions. Use Value: Fast 13 ns turn-on delay and 13 ns fall time support rapid enable/disable; -1.5 A rating handles peak USB suspend/resume currents.
LED Backlight Dimming	Smartphone Power Management
Use Scenario: PWM-controlled current sink for white LED strings in compact displays. IC Role / Device Role: Low-side P-channel switch modulating LED current via source-follower configuration with gate driven by PWM controller. Use Value: 2.9 nC Q_g enables clean 10–20 kHz PWM edges without excessive gate drive power; small SC-70 footprint saves PCB area.	Use Scenario: System-level power rail sequencing and subsystem enable/disable in LTE smartphones. IC Role / Device Role: Load switch managing power to RF front-end modules, sensors, or audio codecs based on AP command. Use Value: -2.5 V V_GS(th) ensures full turn-on with 2.8 V PMIC outputs; 0.265 Ω R_DS(on) at -2.5 V supports low-noise biasing of sensitive analog blocks.

Battery Protection Circuit

USB Port Power Switch

Use Scenario: Reverse-current blocking and overcurrent shutdown in Li-ion battery packs with integrated protection ICs.

IC Role / Device Role: High-side P-channel MOSFET used as back-to-back switch to prevent reverse discharge and enable controlled load disconnect.

Use Value: -20 V rating withstands battery stack transients; 0.150 Ω R_DS(on) limits voltage drop to <120 mV at 0.8 A, preserving pack efficiency.

Use Scenario: Hot-swap power control for USB 2.0 downstream ports in portable hubs and docking stations.

IC Role / Device Role: Load switch isolating VBUS from peripheral devices during insertion/removal or fault conditions.

Use Value: Fast 13 ns turn-on delay and 13 ns fall time support rapid enable/disable; -1.5 A rating handles peak USB suspend/resume currents.

LED Backlight Dimming

Smartphone Power Management

Use Scenario: PWM-controlled current sink for white LED strings in compact displays.

IC Role / Device Role: Low-side P-channel switch modulating LED current via source-follower configuration with gate driven by PWM controller.

Use Value: 2.9 nC Q_g enables clean 10–20 kHz PWM edges without excessive gate drive power; small SC-70 footprint saves PCB area.

Use Scenario: System-level power rail sequencing and subsystem enable/disable in LTE smartphones.

IC Role / Device Role: Load switch managing power to RF front-end modules, sensors, or audio codecs based on AP command.

Use Value: -2.5 V V_GS(th) ensures full turn-on with 2.8 V PMIC outputs; 0.265 Ω R_DS(on) at -2.5 V supports low-noise biasing of sensitive analog blocks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2023LSD-13	R_DS(on) = 0.125 Ω @ -4.5 V; SO-8 package (larger footprint, higher thermal mass)	Higher current handling (3.5 A), but requires more PCB area and lacks SC-70 miniaturization	Select when >2 A continuous current or higher power dissipation (>1 W) is required; not suitable for ultra-thin portable designs.
AO3401	R_DS(on) = 0.085 Ω @ -4.5 V; SOT-23 package (3-pin, single drain)	Lower R_DS(on) but higher R_thJA (220 °C/W max); no multi-drain thermal advantage	Choose for cost-sensitive, lower-power (<0.4 W) applications where thermal margin is less critical than BOM cost.

Compared with DMN2023LSD-13 and AO3401, SI1403BDL-T1-GE3 uniquely balances ultra-small SC-70 footprint, four-drain thermal optimization, and guaranteed -2.5 V logic compatibility-making it optimal for space-constrained, battery-efficient load switching where 1.5 A and 0.6 W are sufficient.

Availability

SI1403BDL-T1-GE3 is available at Aetrix Electronics and suitable for battery management systems, USB power delivery controllers, LED backlight drivers, and smartphone subsystem power switches requiring stable component supply and long-term industrial availability.

Supply support for SI1403BDL-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and miniaturization.

The SI1403BDL-T1-GE3 belongs to Vishay's LITTLE FOOT® SC-70 family, engineered specifically for ultra-compact, low-voltage load switching in portable and wearable electronics where board space and thermal performance are critical constraints.

FAQ

What is the maximum continuous drain current for SI1403BDL-T1-GE3 at 85 °C ambient temperature?

The SI1403BDL-T1-GE3 supports -1.2 A continuous drain current at T_A = 85 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SC-70 package on standard FR4; actual capability may increase with enhanced PCB copper area or forced airflow. The SI1403BDL-T1-GE3 datasheet confirms this value under steady-state conditions with no additional heatsinking.

Does SI1403BDL-T1-GE3 have a built-in body diode, and what is its forward voltage?

Yes, SI1403BDL-T1-GE3 integrates a parasitic body diode inherent to its P-channel MOSFET structure. At I_S = -0.8 A and V_GS = 0 V, the source-drain forward voltage (V_SD) is -0.8 V typical and -1.1 V maximum. This diode enables freewheeling paths in inductive loads and reverse-polarity protection, and its characteristics are fully characterized in the SI1403BDL-T1-GE3 datasheet Section "Specifications".

Can SI1403BDL-T1-GE3 be driven directly by a 2.5 V microcontroller GPIO without a level shifter?

Yes, SI1403BDL-T1-GE3 is explicitly characterized for operation at V_GS = -2.5 V, with R_DS(on) = 0.265 Ω maximum at I_D = -0.8 A. Its gate threshold voltage range (-0.6 V to -1.3 V) ensures full enhancement with 2.5 V logic swing, making direct drive from 2.5 V MCUs feasible. This capability is documented in both the PRODUCT SUMMARY and SPECIFICATIONS tables of the SI1403BDL-T1-GE3 datasheet.

What is the thermal resistance from junction to ambient (R_thJA) for SI1403BDL-T1-GE3 under standard test conditions?

The SI1403BDL-T1-GE3 has a maximum R_thJA of 220 °C/W under steady-state conditions on a 1" × 1" FR4 board with copper on both sides, per the Thermal Resistance Ratings table. Its typical R_thJA is 180 °C/W, enabling 0.568 W power dissipation before reaching the 150 °C maximum junction temperature at 25 °C ambient. These values are measured per JESD51-2 and confirmed in the SI1403BDL-T1-GE3 datasheet.

Is SI1403BDL-T1-GE3 compliant with RoHS and halogen-free standards?

Yes, SI1403BDL-T1-GE3 is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and JEDEC JS709B requirements. The "-GE3" suffix explicitly denotes halogen-free packaging, and compliance is verified in Vishay's material declarations. This information is stated in the ORDERING INFORMATION section and Material Categorization note of the SI1403BDL-T1-GE3 datasheet.

SI1403BDL-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id:: 1.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 4.5 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 625mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1403BDL-T1-GE3 FAQ

1.How can I place an order for SI1403BDL-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1403BDL-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1403BDL-T1-GE3 reliable?

The price and inventory of SI1403BDL-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1403BDL-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1403BDL-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1403BDL-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1403BDL-T1-GE3?

SI1403BDL-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1403BDL-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1403BDL-T1-GE3?

For technical support, including SI1403BDL-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1403BDL-T1-GE3 requirements.

6.How does Aetrix verify that SI1403BDL-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1403BDL-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1403BDL-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1403BDL-T1-GE3?

All SI1403BDL-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1403BDL-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1403BDL-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1403BDL-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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