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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1467DH-T1-GE3

Name: SI1467DH-T1-GE3
Brand: Vishay Siliconix
SKU: SI1467DH-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1467DH-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1467DH-T1-GE3.pdf

Description:: MOSFET P-CH 20V 2.7A SC70-6

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Product details

Overview

SI1467DH-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in SC-70 (SOT-363) package, rated for -20 V V_DS, 0.090 Ω R_DS(on) at V_GS = -4.5 V, 9.0 nC total gate charge, -2.7 A continuous drain current at T_C = 25 °C, and optimized for low-voltage load switching in portable electronics.

For engineers reviewing the SI1467DH-T1-GE3 datasheet, SI1467DH-T1-GE3 pinout, SI1467DH-T1-GE3 application, or SI1467DH-T1-GE3 equivalent, key selection criteria include its -1.0 V maximum V_GS(th), -0.78 V typical body diode forward voltage, 561 pF input capacitance, thermal resistance of 80 °C/W (max R_thJA), and compatibility with 1.8 V logic-level gate drive.

Technical Context

This device uses TrenchFET® technology to achieve low on-resistance and fast switching in a 6-pin SC-70 package with four parallel drain terminals. Its -1.0 V V_GS(th) enables reliable turn-on from 1.8 V and 2.5 V supply rails, while the 9.0 nC Q_g supports efficient PWM control in battery-powered systems.

The integrated source-drain body diode exhibits 21 ns reverse recovery time and 15 nC Q_rr, supporting synchronous rectification and bidirectional current handling in compact DC-DC converters and power-path management circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for low-voltage rail isolation and reverse polarity protection
R_DS(on) max @ V_GS = -4.5 V	0.090 Ω - Enables <180 mW conduction loss at 1.5 A, critical for thermally constrained portable PCBs
Q_g typ.	9.0 nC - Supports >1 MHz switching with minimal gate driver power overhead
V_GS(th) max	-1.0 V - Ensures full enhancement with 1.8 V GPIO or LDO output without level-shifting
I_D continuous @ T_C = 25 °C	-2.7 A - Sustains peak load currents in USB-powered peripherals and sensor modules
R_thJA max	80 °C/W - Defines thermal derating on standard FR4; requires ≥100 mm² copper pour for 1 W dissipation
V_SD typ. @ I_S = -2 A	-0.78 V - Minimizes forward drop in reverse-current protection and OR-ing applications

Pinout & Package

SC-70 (SOT-363) 6-lead surface-mount package with copper leadframe, 2.0 mm × 2.1 mm footprint, 0.95 mm height, and four parallel drain terminals for reduced R_DS(on) and improved thermal transfer to PCB.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 6	Drain (D)	Four electrically connected drain leads - lower effective R_DS(on) and junction-to-PCB thermal resistance
3	Gate (G)	Control terminal - accepts logic-level gate drive; 2.0 Ω typical gate resistance limits ringing
5	Source (S)	Power return path - tied to system ground or negative rail in high-side switch configurations

Key Features

Feature	Design Value
TrenchFET® process	Delivers 0.090 Ω R_DS(on) at -4.5 V in sub-2 mm² footprint - enables space-constrained load switches
100 % R_g tested	Ensures consistent gate drive timing and eliminates batch-to-batch variation in switching speed
Copper leadframe	Reduces R_thJF to 45 °C/W max - improves thermal coupling to PCB copper vs. Alloy 42 alternatives
Low V_GS(th) distribution	-0.4 V min to -1.0 V max - guarantees turn-on with 1.8 V microcontroller I/O without external biasing
Body diode Q_rr	15–25 nC - supports efficient flyback energy recovery in boost converters and LED drivers

Applications

Smartphone Power Management	USB-C Port Protection
Use Scenario: Isolating battery from USB input during charging to prevent backfeed and enable independent power path control. IC Role / Device Role / Timing Role: High-side load switch controlling VBUS routing between Type-C receptacle and PMIC input. Use Value: -20 V rating withstands USB-C 20 V PD transients; 0.090 Ω R_DS(on) limits voltage drop to <135 mV at 1.5 A, preserving bus regulation.	Use Scenario: Reverse-current blocking and overcurrent protection in portable accessories with dual-power sources. IC Role / Device Role / Timing Role: P-channel MOSFET used as ideal diode in OR-ing configuration between battery and adapter inputs. Use Value: -0.78 V V_SD reduces forward loss by 40 % vs. Schottky diodes; fast 21 ns t_rr prevents shoot-through during source switchover.
Wearable Sensor Hub	Bluetooth Audio Module
Use Scenario: Sequenced power-up of MEMS sensors, ADCs, and RF transceivers to minimize inrush current and avoid brownout. IC Role / Device Role / Timing Role: Low-quiescent-load switch enabling controlled enable/disable of peripheral voltage domains. Use Value: 100 nA I_GSS and -1 μA I_DSS ensure <1 μA leakage per channel - preserves battery life in multi-week standby modes.	Use Scenario: Enabling/disabling Class-D amplifier supply and codec bias rails based on audio playback state. IC Role / Device Role / Timing Role: Load switch isolating 3.3 V LDO output from amplifier stage during sleep mode. Use Value: 9.0 nC Q_g allows clean 100 ns turn-on/turn-off with 10 kΩ pull-up - eliminates pop/click artifacts during power transitions.

Smartphone Power Management

USB-C Port Protection

Use Scenario: Isolating battery from USB input during charging to prevent backfeed and enable independent power path control.

IC Role / Device Role / Timing Role: High-side load switch controlling VBUS routing between Type-C receptacle and PMIC input.

Use Value: -20 V rating withstands USB-C 20 V PD transients; 0.090 Ω R_DS(on) limits voltage drop to <135 mV at 1.5 A, preserving bus regulation.

Use Scenario: Reverse-current blocking and overcurrent protection in portable accessories with dual-power sources.

IC Role / Device Role / Timing Role: P-channel MOSFET used as ideal diode in OR-ing configuration between battery and adapter inputs.

Use Value: -0.78 V V_SD reduces forward loss by 40 % vs. Schottky diodes; fast 21 ns t_rr prevents shoot-through during source switchover.

Wearable Sensor Hub

Bluetooth Audio Module

Use Scenario: Sequenced power-up of MEMS sensors, ADCs, and RF transceivers to minimize inrush current and avoid brownout.

IC Role / Device Role / Timing Role: Low-quiescent-load switch enabling controlled enable/disable of peripheral voltage domains.

Use Value: 100 nA I_GSS and -1 μA I_DSS ensure <1 μA leakage per channel - preserves battery life in multi-week standby modes.

Use Scenario: Enabling/disabling Class-D amplifier supply and codec bias rails based on audio playback state.

IC Role / Device Role / Timing Role: Load switch isolating 3.3 V LDO output from amplifier stage during sleep mode.

Use Value: 9.0 nC Q_g allows clean 100 ns turn-on/turn-off with 10 kΩ pull-up - eliminates pop/click artifacts during power transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1469DH-T1-GE3	Same package, -30 V V_DS, 0.140 Ω R_DS(on) @ -4.5 V, higher voltage margin but higher on-resistance	Better suited for 24 V industrial I/O modules where -20 V rating is insufficient	Select when system must tolerate transient overvoltage beyond ±20 V, accepting 55 % higher conduction loss at 2 A
DMN2053LFG-7	SOT-363, -20 V, 0.105 Ω R_DS(on) @ -4.5 V, 12.5 nC Q_g, no 100 % R_g test	Higher gate charge increases driver losses in high-frequency PWM; lacks guaranteed R_g spec	Acceptable for static switching or low-duty-cycle enable functions where gate drive efficiency is secondary to cost

Compared with SI1467DH-T1-GE3, Si1469DH-T1-GE3 trades on-resistance for voltage headroom, while DMN2053LFG-7 offers similar voltage rating but higher switching losses and untested gate resistance - making SI1467DH-T1-GE3 optimal for 1.8–2.5 V logic-driven, thermally sensitive portable designs.

Availability

SI1467DH-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, USB-C port protection, and wearable sensor hub applications requiring stable component supply, halogen-free compliance, and Pb-free RoHS processing.

Supply support for SI1467DH-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and miniaturization.

The SI1467DH-T1-GE3 belongs to Vishay's "Little Foot" SC-70 TrenchFET® family, engineered specifically for space-constrained, battery-operated devices demanding low gate-threshold voltage, low on-resistance, and robust thermal performance in sub-2 mm² packages.

FAQ

What is the maximum gate-source voltage rating for SI1467DH-T1-GE3?

The absolute maximum V_GS rating for SI1467DH-T1-GE3 is ±8 V. Exceeding this limit risks permanent gate oxide damage. The device is designed for logic-level operation with V_GS(th) ranging from -0.4 V to -1.0 V, making it compatible with 1.8 V and 2.5 V microcontroller outputs without level shifters. Always observe this rating in both steady-state and transient conditions, including ESD events.

Can SI1467DH-T1-GE3 be used as a high-side switch with 3.3 V gate drive?

Yes, SI1467DH-T1-GE3 can be reliably used as a high-side switch with 3.3 V gate drive. At V_GS = -3.3 V, its R_DS(on) is guaranteed ≤0.105 Ω (interpolated from -2.5 V and -4.5 V specs), delivering <160 mW conduction loss at 1.25 A. Its -1.0 V maximum V_GS(th) ensures full enhancement, and the 9.0 nC Q_g allows fast, low-loss switching without excessive gate driver current.

What is the thermal resistance from junction to ambient for SI1467DH-T1-GE3 on a standard PCB?

The maximum junction-to-ambient thermal resistance (R_thJA) for SI1467DH-T1-GE3 is 80 °C/W under standard test conditions (1" × 1" FR4 board, 1 oz copper). On a typical 2-layer PCB with modest copper pour, actual R_thJA falls between 60–75 °C/W. For sustained 1 W dissipation, keep ambient temperature below 75 °C or add thermal vias and enlarged drain pads to approach the 60 °C/W typical value.

Does SI1467DH-T1-GE3 have a specified body diode reverse recovery time?

Yes, SI1467DH-T1-GE3 specifies a typical body diode reverse recovery time (t_rr) of 21 ns, measured at I_F = -2.0 A, dI/dt = 100 A/μs, and T_J = 25 °C. This fast recovery supports use in synchronous rectification and bidirectional current paths without significant switching loss or voltage overshoot. The associated Q_rr is 15–25 nC, confirming suitability for medium-frequency DC-DC topologies.

Is SI1467DH-T1-GE3 pin-compatible with other SOT-363 P-channel MOSFETs?

SI1467DH-T1-GE3 follows the standard SOT-363 (SC-70-6) pinout: pins 1/2/4/6 = Drain, pin 3 = Gate, pin 5 = Source. While many SOT-363 P-channel MOSFETs share this layout, pin compatibility does not guarantee functional equivalence. Substituting SI1467DH-T1-GE3 requires verifying matching V_DS, R_DS(on), Q_g, and thermal specs - e.g., DMN2053LFG-7 shares the footprint but has higher Q_g and no R_g test.

SI1467DH-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 2.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13.5 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 561 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta), 2.78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1467DH-T1-GE3 FAQ

1.How can I place an order for SI1467DH-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1467DH-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1467DH-T1-GE3 reliable?

The price and inventory of SI1467DH-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1467DH-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1467DH-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1467DH-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1467DH-T1-GE3?

SI1467DH-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1467DH-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1467DH-T1-GE3?

For technical support, including SI1467DH-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1467DH-T1-GE3 requirements.

6.How does Aetrix verify that SI1467DH-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1467DH-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1467DH-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1467DH-T1-GE3?

All SI1467DH-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1467DH-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1467DH-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1467DH-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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