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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI1489EDH-T1-GE3

Name: SI1489EDH-T1-GE3
Brand: Vishay Siliconix
SKU: SI1489EDH-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI1489EDH-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SI1489EDH-T1-GE3.pdf

Description:: MOSFET P-CH 8V 2A SOT-363

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Product details

Overview

SI1489EDH-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET® power MOSFET in SOT-363 (SC-70) package, rated for -8 V drain-source voltage, 0.048 Ω R_DS(on) at V_GS = -4.5 V, -2.0 A continuous drain current (package-limited), 10.5 nC total gate charge, and built-in Zener ESD protection. It serves as a compact load switch in portable consumer electronics requiring low-voltage, low-power control.

For engineers reviewing the SI1489EDH-T1-GE3 datasheet, SI1489EDH-T1-GE3 pinout, SI1489EDH-T1-GE3 application, or SI1489EDH-T1-GE3 equivalent, key selection criteria include its -8 V rating, sub-50 mΩ on-resistance at -4.5 V, 6-pin SOT-363 thermal performance with four drain terminals, and halogen-free RoHS-compliant construction.

Technical Context

This device uses trench-gate MOSFET architecture optimized for low-voltage P-channel switching, with gate threshold voltage V_GS(th) between -0.35 V and -0.7 V, enabling logic-level drive from 1.2–4.5 V controllers. Its dynamic parameters-10.5 nC Q_g, 3.3 nC Q_gd, and 1.5 nC Q_gs-support fast turn-on/turn-off in battery-powered systems.

The SOT-363 package features four dedicated drain leads and one source lead, delivering improved thermal resistance (R_thJF = 34 °C/W typical) versus legacy Alloy 42 versions. Its body diode exhibits V_SD = -0.8 to -1.2 V at -2 A and t_rr = 30–60 ns, suitable for synchronous or freewheeling paths in compact DC-DC loads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-8 V - Maximum blocking voltage for low-voltage portable rail switching
R_DS(on)	0.048 Ω at V_GS = -4.5 V - Enables <100 mW conduction loss at 2 A load
I_D (continuous)	-2.0 A (package-limited) - Supports typical handheld device load currents
Q_g	10.5 nC - Low gate drive energy for efficient PWM control from microcontrollers
V_GS(th)	-0.35 to -0.7 V - Ensures reliable turn-on with 1.8 V or higher logic outputs
T_J range	-55 to +150 °C - Qualified for extended temperature operation in sealed portable enclosures
R_thJA	60 °C/W (typical) - Thermal performance validated on 1" × 1" FR4 board

Pinout & Package

SOT-363 (SC-70, 6-lead) package with copper leadframe, measuring 2.00 mm × 2.10 mm × 1.00 mm (D × E × A2), featuring four drain terminals for enhanced thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
1	Drain	Primary high-current output path; electrically tied to pins 2, 4, and 6
2	Drain	Secondary drain connection; reduces effective R_DS(on) and thermal resistance
3	Gate	Control input; requires no external pull-down due to integrated Zener ESD clamp
4	Drain	Third drain terminal; improves current sharing and PCB heat spreading
5	Source	Reference node for load return; connected internally to system ground or battery negative
6	Drain	Fourth drain terminal; enables symmetric layout and lower parasitic inductance

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.048 Ω R_DS(on) at -4.5 V in ultra-small SOT-363 footprint
Four-drain SOT-363 package	Reduces junction-to-foot thermal resistance to 34 °C/W (typical), improving power handling
Built-in Zener ESD protection	Provides 2000 V HBM robustness without external TVS, simplifying BOM
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for green electronics manufacturing
100 % R_g tested	Ensures consistent gate drive timing and avoids batch-to-batch switching variation

Applications

Smartphone Power Management	Digital Camera Load Switching
Use Scenario: Controlling power to camera modules, flash LEDs, or RF front-end ICs during sleep/wake cycles. IC Role / Device Role / Timing Role: High-side load switch enabling rapid, low-leakage power gating under PMIC or baseband processor control. Use Value: 0.048 Ω R_DS(on) minimizes voltage drop and self-heating during 1–2 A burst loads; -0.7 V V_GS(th) ensures compatibility with 1.8 V GPIOs.	Use Scenario: Isolating image sensor or LCD backlight circuits to reduce standby current in digital still cameras (DSC). IC Role / Device Role / Timing Role: Low-voltage P-channel switch placed between battery and peripheral subsystems. Use Value: Four-drain SOT-363 layout supports compact PCB routing while maintaining <100 mW conduction loss at full load.
Portable Game Console Core Logic	GPS Module Power Control
Use Scenario: Enabling/disabling CPU voltage regulators or audio codec supplies based on game state or user input. IC Role / Device Role / Timing Role: Logic-controlled power switch with fast turn-on delay (90 ns typ.) and minimal gate drive demand. Use Value: 10.5 nC Q_g allows clean switching using standard 3.3 V MCU outputs without gate drivers.	Use Scenario: Managing power to GPS receiver ICs during location acquisition vs. tracking modes to extend battery life. IC Role / Device Role / Timing Role: Standby-mode isolation switch with low IDSS (<1 µA at -8 V) minimizing quiescent drain. Use Value: -55 to +150 °C operating range ensures reliability inside thermally constrained handheld GPS units.

Smartphone Power Management

Digital Camera Load Switching

Use Scenario: Controlling power to camera modules, flash LEDs, or RF front-end ICs during sleep/wake cycles.

IC Role / Device Role / Timing Role: High-side load switch enabling rapid, low-leakage power gating under PMIC or baseband processor control.

Use Value: 0.048 Ω R_DS(on) minimizes voltage drop and self-heating during 1–2 A burst loads; -0.7 V V_GS(th) ensures compatibility with 1.8 V GPIOs.

Use Scenario: Isolating image sensor or LCD backlight circuits to reduce standby current in digital still cameras (DSC).

IC Role / Device Role / Timing Role: Low-voltage P-channel switch placed between battery and peripheral subsystems.

Use Value: Four-drain SOT-363 layout supports compact PCB routing while maintaining <100 mW conduction loss at full load.

Portable Game Console Core Logic

GPS Module Power Control

Use Scenario: Enabling/disabling CPU voltage regulators or audio codec supplies based on game state or user input.

IC Role / Device Role / Timing Role: Logic-controlled power switch with fast turn-on delay (90 ns typ.) and minimal gate drive demand.

Use Value: 10.5 nC Q_g allows clean switching using standard 3.3 V MCU outputs without gate drivers.

Use Scenario: Managing power to GPS receiver ICs during location acquisition vs. tracking modes to extend battery life.

IC Role / Device Role / Timing Role: Standby-mode isolation switch with low IDSS (<1 µA at -8 V) minimizing quiescent drain.

Use Value: -55 to +150 °C operating range ensures reliability inside thermally constrained handheld GPS units.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si1488EDH-T1-GE3	-12 V V_DS, 0.065 Ω R_DS(on) at -4.5 V, same SOT-363 package	Higher voltage margin but higher on-resistance; suited for 9–12 V auxiliary rails	Select when system rail exceeds 8 V or higher blocking voltage is required
DMG1012T-7	-8 V V_DS, 0.055 Ω R_DS(on) at -4.5 V, SOT-563 package (5-pin, single drain)	Lower thermal performance (R_thJA ≈ 150 °C/W), no built-in Zener ESD protection	Choose only if board space is tighter than SOT-363 and external ESD protection is already present

Compared with SI1489EDH-T1-GE3, Si1488EDH-T1-GE3 offers higher voltage headroom at the cost of increased conduction loss, while DMG1012T-7 sacrifices thermal efficiency and integrated ESD robustness for slightly smaller footprint-neither is pin-compatible, and both require layout and reliability reassessment.

Availability

SI1489EDH-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, digital camera load switching, portable game console core logic, and GPS module power control requiring stable component supply across high-mix consumer electronics production.

Supply support for SI1489EDH-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs discrete semiconductors with emphasis on power efficiency, miniaturization, and reliability for high-volume electronics.

The SI14xxEDH series targets portable and battery-powered applications, delivering low-voltage P-channel MOSFETs in copper-leadframe SC-70 packages to maximize thermal performance and integration density.

FAQ

What is the maximum continuous drain current rating for SI1489EDH-T1-GE3?

The SI1489EDH-T1-GE3 has a continuous drain current rating of -2.0 A at T_C = 25 °C, limited by package thermal constraints-not silicon capability. At T_C = 70 °C, the rating remains -2.0 A, while at T_A = 25 °C it drops to -2.0 A under standard FR4 board conditions. This reflects its design as a compact, thermally optimized load switch rather than a high-current power stage.

Does SI1489EDH-T1-GE3 require an external gate resistor for typical switching applications?

No, SI1489EDH-T1-GE3 does not require an external gate resistor for most portable load-switching applications. Its 10.5 nC total gate charge and 80–800 Ω internal gate resistance (R_g) allow direct drive from standard 1.8–3.3 V GPIOs. An external resistor may be added only for EMI suppression or precise slew-rate control in noise-sensitive environments.

Is SI1489EDH-T1-GE3 compatible with lead-free reflow soldering processes?

Yes, SI1489EDH-T1-GE3 is qualified for lead-free reflow soldering with a peak temperature of 260 °C, as specified in its thermal ratings. The device is explicitly marked "Lead (Pb)-free and Halogen-free" in its ordering information and complies with JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for surface-mount assembly.

What is the body diode forward voltage of SI1489EDH-T1-GE3, and how does it affect reverse-current paths?

The SI1489EDH-T1-GE3 body diode has a forward voltage (V_SD) of -0.8 to -1.2 V at -2 A and V_GS = 0 V. This relatively low V_SD supports efficient freewheeling in inductive loads, but designers must account for its 30–60 ns reverse recovery time (t_rr) and 12–25 nC reverse recovery charge (Q_rr) when used in synchronous rectification or bidirectional power paths.

Can SI1489EDH-T1-GE3 be used in place of an N-channel MOSFET for high-side switching?

Yes, SI1489EDH-T1-GE3 is specifically designed for high-side switching as a P-channel MOSFET-its negative V_DS rating and logic-level V_GS(th) (-0.35 to -0.7 V) enable direct interface with common 1.8 V or 3.3 V controllers without level-shifting circuitry. Unlike N-channel alternatives, it eliminates the need for bootstrap capacitors or charge pumps in low-voltage, low-power applications.

SI1489EDH-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 8 V

Current - Continuous Drain (Id) @ 25°C:: 2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.2V, 4.5V

Rds On (Max) @ Id, Vgs:: 48mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id:: 700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 4.5 V

Vgs (Max):: ±5V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 2.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SI1489EDH-T1-GE3 FAQ

1.How can I place an order for SI1489EDH-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI1489EDH-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI1489EDH-T1-GE3 reliable?

The price and inventory of SI1489EDH-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1489EDH-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI1489EDH-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1489EDH-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI1489EDH-T1-GE3?

SI1489EDH-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI1489EDH-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI1489EDH-T1-GE3?

For technical support, including SI1489EDH-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1489EDH-T1-GE3 requirements.

6.How does Aetrix verify that SI1489EDH-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI1489EDH-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1489EDH-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI1489EDH-T1-GE3?

All SI1489EDH-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1489EDH-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI1489EDH-T1-GE3 part is unused and in its original packaging.

Return procedure for SI1489EDH-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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