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Vishay Siliconix SI1902CDL-T1-BE3
- Part No.:
- SI1902CDL-T1-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
SI1902CDL-T1-BE3.pdf
- Description:
- MOSFET 2N-CH 20V 1A SC70-6
- Quantity:
- Payment:
- Shipping:
Inventory:5,985
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Product details
Overview
SI1902CDL-T1-BE3 from Vishay Siliconix is a dual N-channel 20 V (D-S) TrenchFET® MOSFET in SC-70 (SOT-363) package, rated for 1.1 A continuous drain current at TC = 25 °C, with RDS(on) of 0.235 Ω at VGS = 4.5 V and 0.306 Ω at VGS = 2.5 V, used in load switching and DC/DC converters for portable electronics.
For engineers reviewing the SI1902CDL-T1-BE3 datasheet, SI1902CDL-T1-BE3 pinout, SI1902CDL-T1-BE3 application, or SI1902CDL-T1-BE3 equivalent, key selection criteria include low gate charge (0.9 nC typ. at 4.5 V), dual-channel integration in a 6-pin SOT-363 footprint, thermal resistance (RthJA max 350 °C/W), and body diode recovery performance (trr = 2–4 ns).
Technical Context
This dual N-channel MOSFET integrates two matched silicon die in a single SC-70 package, sharing no internal connection between channels-each channel has independent source, gate, and drain terminals. Its TrenchFET® structure enables low RDS(on) at logic-level gate drive (2.5 V), supporting battery-powered systems where supply voltage may drop below 3.3 V.
The device features 100% Rg testing, guaranteed gate resistance (2.4–24 Ω), and specified dynamic parameters including Ciss = 62 pF, Qgd = 0.2 nC, and fast switching times (td(on) = 4–12 ns depending on gate drive voltage), making it suitable for high-frequency DC/DC conversion up to several MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum drain-source blocking voltage; defines safe operating range in 3.3 V–12 V input systems. |
| RDS(on) @ 4.5 V | 0.235 Ω max - Enables ≤235 mW conduction loss at 1 A, critical for thermally constrained portable PCBs. |
| RDS(on) @ 2.5 V | 0.306 Ω max - Ensures usable on-resistance even under brown-out conditions in Li-ion powered devices. |
| Qg @ 4.5 V | 0.9 nC typ. - Reduces gate drive power and enables efficient operation with low-current microcontroller GPIOs. |
| ID cont. @ TC = 25 °C | 1.1 A - Specifies maximum steady-state current when mounted on a 1" × 1" FR4 board with copper heatsinking. |
| trr / Qrr | 2–4 ns / 8–16 nC - Supports synchronous rectification with minimal reverse recovery loss in buck converters. |
| RthJA | 350 °C/W max - Defines worst-case junction-to-ambient thermal path; requires careful layout for >300 mW dissipation. |
Pinout & Package
Package: SC-70 (SOT-363), 6-lead surface-mount, lead (Pb)-free and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Low-side return path for first MOSFET; electrically isolated from S2; connects to local ground or power rail. |
| 2 (G1) | Gate of Channel 1 | Control terminal for Channel 1; requires <1.5 V threshold turn-on; driven by MCU or dedicated gate driver. |
| 3 (D2) | Drain of Channel 2 | High-side switching node for second MOSFET; shares drain pad with pin 4 in some layouts but is electrically separate. |
| 4 (D1) | Drain of Channel 1 | Switching output for Channel 1; routed to load or inductor; thermally coupled to package foot (RthJF = 250–300 °C/W). |
| 5 (S2) | Source of Channel 2 | Independent return path for Channel 2; allows dual low-side or independent half-bridge configuration. |
| 6 (G2) | Gate of Channel 2 | Separate control input enabling independent timing or phase-shifted operation of both channels. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers low RDS(on) at 2.5 V gate drive, enabling direct interface with 2.8 V/3.3 V I/O without level-shifting. |
| 100% Rg tested | Ensures consistent gate drive timing and predictable switching behavior across production lots. |
| Dual-channel isolation | No internal connection between channels-supports independent load switching, dual-phase regulation, or redundant control paths. |
| Low Qgd/Qg ratio | 0.2 nC / 0.9 nC ≈ 22% - Minimizes Miller-induced shoot-through risk in high-speed synchronous topologies. |
| Specified trr and Qrr | Enables accurate loss modeling in synchronous rectifier designs; avoids reliance on typical/untested diode data. |
Applications
| Battery-Powered Load Switch | Compact DC/DC Buck Converter |
|---|---|
|
Use Scenario: Power sequencing and rail enablement in smartphones, wearables, and IoT sensors with Li-ion or coin-cell supplies. IC Role / Device Role / Timing Role: Dual low-side switch controlling VDD_IO and VDD_CORE rails; each channel independently gated for staggered startup. Use Value: RDS(on) ≤ 0.306 Ω at 2.5 V ensures <300 mW loss at 1 A, preserving battery runtime while supporting rapid on/off cycling. |
Use Scenario: High-efficiency 3.3 V → 1.2 V point-of-load conversion in space-constrained edge AI modules. IC Role / Device Role / Timing Role: Synchronous rectifier (Channel 1) and high-side switch (Channel 2) in a discrete buck stage operating at 2 MHz. Use Value: Low Qg (0.9 nC) and fast tf/tr (9–24 ns) reduce switching losses, enabling >92% efficiency at 500 mA load. |
| USB-C Port Power Management | Redundant Signal Path Switching |
|
Use Scenario: Overvoltage/overcurrent protection and VBUS enablement in USB-C receptacles with dual-role power delivery. IC Role / Device Role / Timing Role: Dual-channel load switch isolating downstream peripherals from VBUS during fault conditions. Use Value: Independent gate control (G1/G2) allows coordinated shutdown of both upstream and downstream paths within <100 ns. |
Use Scenario: Fail-safe signal routing in medical telemetry transceivers requiring uninterrupted data flow during component replacement. IC Role / Device Role / Timing Role: Two independent low-RDS(on) switches providing hot-swap capability between primary and backup RF front-ends. Use Value: Matched RDS(on) tolerance (<15%) and identical thermal response ensure balanced current sharing and seamless switchover. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2041LSD-13 | Higher RDS(on) (0.28 Ω @ 4.5 V), larger TSOP-6 package (3.05 × 1.7 mm vs. SC-70's 2.2 × 1.35 mm), same 20 V rating. | Less suitable for ultra-thin portable PCBs; better thermal margin (RthJA = 220 °C/W) for higher-power loads. | Choose DMN2041LSD-13 when board area allows and >0.8 A continuous current is required with lower thermal resistance. |
| AO6401 | Lower VDS (30 V), higher Qg (2.1 nC @ 4.5 V), same SC-70 package; RDS(on) = 0.22 Ω @ 4.5 V. | Supports wider input ranges (e.g., 12 V automotive), but slower switching and higher gate drive demand limit high-frequency use. | Choose AO6401 only if 30 V rating is mandatory and switching frequency remains below 500 kHz to manage Qg-related losses. |
Compared with DMN2041LSD-13 and AO6401, SI1902CDL-T1-BE3 offers the lowest gate charge and smallest footprint among 20 V dual N-channel MOSFETs, making it optimal for miniaturized, high-frequency DC/DC and battery-switching applications where layout area and drive strength are constrained.
Availability
SI1902CDL-T1-BE3 is available at Aetrix Electronics and suitable for battery management systems, portable DC/DC converters, and USB-C power delivery circuits requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for SI1902CDL-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power solutions.
The SI1902CDL-T1-BE3 belongs to Vishay's TrenchFET® logic-level dual MOSFET product line, engineered specifically for space-constrained, battery-operated systems demanding low-voltage gate drive and minimal conduction loss.
FAQ
What is the maximum continuous drain current for SI1902CDL-T1-BE3 at 70 °C case temperature?
The SI1902CDL-T1-BE3 supports 0.9 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SC-70 package under sustained power dissipation; design margin should be applied for reliability in high-ambient environments.
Does SI1902CDL-T1-BE3 support true 2.5 V logic-level gate drive?
Yes, SI1902CDL-T1-BE3 is fully characterized down to VGS = 2.5 V, with RDS(on) max of 0.306 Ω and guaranteed VGS(th) of 0.6–1.5 V. This enables direct drive from 2.5 V or 2.8 V microcontrollers without external level shifters.
What is the thermal resistance from junction to foot (RthJF) for SI1902CDL-T1-BE3?
The SI1902CDL-T1-BE3 has a maximum junction-to-foot thermal resistance of 300 °C/W under steady-state conditions. This parameter is critical for estimating die temperature when the drain pads are soldered to large copper planes acting as heat sinks.
Can SI1902CDL-T1-BE3 be used in synchronous rectification topologies?
Yes, SI1902CDL-T1-BE3 is suitable for synchronous rectification due to its specified body diode characteristics: VSD = 0.8–1.2 V at IS = 0.8 A and trr = 2–4 ns. These values allow accurate loss calculation and reliable replacement of Schottky diodes in buck converters up to 2 MHz.
Is SI1902CDL-T1-BE3 pin-compatible with other SC-70 dual MOSFETs like SI1901EDL?
No, SI1902CDL-T1-BE3 is not pin-compatible with SI1901EDL. The SI1902CDL-T1-BE3 uses a SOT-363 pinout (S1-G1-D2-D1-S2-G2), whereas SI1901EDL follows a different arrangement (G1-S1-D1-G2-S2-D2); incorrect substitution would result in functional failure or damage.
SI1902CDL-T1-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Ta), 1.1A (Tc)
- Rds On (Max) @ Id, Vgs:
- 235mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 62pF @ 10V
- Power - Max:
- 300mW (Ta), 420mW (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-6
SI1902CDL-T1-BE3 FAQ
1.How can I place an order for SI1902CDL-T1-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI1902CDL-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI1902CDL-T1-BE3 reliable?
The price and inventory of SI1902CDL-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI1902CDL-T1-BE3 is usually 5 days.
3.What payment methods are accepted for SI1902CDL-T1-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI1902CDL-T1-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI1902CDL-T1-BE3?
SI1902CDL-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI1902CDL-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI1902CDL-T1-BE3?
For technical support, including SI1902CDL-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI1902CDL-T1-BE3 requirements.
6.How does Aetrix verify that SI1902CDL-T1-BE3 is sourced from the original manufacturer or authorized distributors?
All SI1902CDL-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI1902CDL-T1-BE3 meets industry standards.
7.What is the process for return or replacement of SI1902CDL-T1-BE3?
All SI1902CDL-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI1902CDL-T1-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI1902CDL-T1-BE3 part is unused and in its original packaging.
Return procedure for SI1902CDL-T1-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI1902CDL-T1-BE3 Tags
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