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NXP Semiconductors SI2302DS,215
- Part No.:
- SI2302DS,215
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SI2302DS,215.pdf
- Description:
- MOSFET N-CH 20V 2.5A TO236AB
- Quantity:
- Payment:
- Shipping:
Inventory:2,296
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Product details
Overview
SI2302DS,215 from Nexperia is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT23 package, rated for 20 V VDS, 2.5 A continuous drain current at 25 °C, and 85 mΩ RDS(on) at VGS = 4.5 V. It serves as a logic-level–compatible low-side switch in portable battery management and DC-DC converter circuits.
For engineers reviewing the SI2302DS,215 datasheet, SI2302DS,215 pinout, SI2302DS,215 application, or SI2302DS,215 equivalent, key selection criteria include its sub-85 mΩ on-resistance at 4.5 V gate drive, 10 A peak pulsed current capability, thermal resistance of 150 K/W to solder point, and compatibility with compact PCB layouts requiring SOT23 footprint.
Technical Context
This discrete MOSFET uses TrenchMOS™ technology to achieve fast switching (td(on) ≤ 20 ns, tf ≤ 50 ns) and low gate charge (Qg(tot) = 5.4–10 nC), enabling efficient operation in high-frequency DC-DC converters. Its gate threshold voltage (VGS(th)) is tightly specified at 0.65 V (typ), ensuring reliable turn-on with 2.5 V logic signals.
The device integrates a source-drain diode with VSD = 0.8–1.2 V at IS = 1.6 A and supports junction temperatures up to 150 °C. Its limiting values include ±8 V VGS, 20 V VDS, and 0.83 W total power dissipation at Tsp = 25 °C - all defined per IEC 60134 Absolute Maximum Rating System.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V maximum - supports input rails up to 18 V in battery-powered systems with margin. |
| ID (DC) | 2.5 A at Tsp = 25 °C - suitable for load switching in USB-powered peripherals and PMIC auxiliary paths. |
| RDS(on) | 56–85 mΩ at VGS = 4.5 V - enables <100 mW conduction loss at 1 A, critical for thermal budget in SOT23. |
| Qg(tot) | 5.4–10 nC - reduces gate drive power and allows use with low-current microcontroller GPIOs. |
| tf | 34–50 ns - minimizes switching losses in PWM frequencies up to 1 MHz. |
| VGS(th) | 0.65 V typical - ensures full enhancement with 1.8 V/2.5 V/3.3 V logic without level-shifting. |
| Tj max | 150 °C - permits operation in sealed enclosures or near heat-generating components. |
Pinout & Package
SI2302DS,215 is housed in a plastic SOT23 (TO-236AB) surface-mount package measuring 2.9 × 1.3 × 1.0 mm, optimized for automated assembly and space-constrained designs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Accepts logic-level voltage (≥2.5 V) to fully enhance channel; requires minimal gate drive current due to low Qg. |
| 2 (Source) | Reference node / return path | Connected to system ground or low-side reference; forms cathode of integrated body diode. |
| 3 (Drain) | Power output terminal | Switches load current to VIN; routed to top copper layer for thermal relief and current handling. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS™ technology | Enables lower RDS(on) and higher cell density than planar MOSFETs in same SOT23 footprint. |
| Logic-level gate drive | Turns on fully with standard 2.5 V/3.3 V MCU outputs - eliminates need for gate driver ICs. |
| Fast switching | Sub-100 ns turn-off delay and fall time reduce energy loss during transitions in SMPS applications. |
| Integrated body diode | Supports freewheeling in buck converters and reverse-polarity protection without external diode. |
| Thermal resistance Rth(j-sp) | 150 K/W enables 0.83 W dissipation with only ~125 °C rise above solder point - simplifies thermal design. |
Applications
| Battery Protection Circuit | Load Switch in Portable Devices |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Low-side N-channel MOSFET used as active discharge switch and charge/discharge path controller. Use Value: 85 mΩ RDS(on) limits voltage drop to <85 mV at 1 A, preserving battery runtime and enabling accurate current sensing. |
Use Scenario: Controlled power-up of USB peripherals, sensors, or RF modules in wearables and IoT edge nodes. IC Role / Device Role / Timing Role: High-speed load switch activated by microcontroller GPIO to isolate downstream circuitry. Use Value: 20 ns turn-on delay and 50 ns fall time allow precise timing control of power sequencing with no hold-up capacitor needed. |
| Step-Down DC-DC Converter | Low-Power LED Driver |
Use Scenario: Synchronous rectifier or high-side switch in 3–12 V input buck converters for portable medical devices. IC Role / Device Role / Timing Role: Power switch in PWM-controlled power stage operating at 500 kHz–1 MHz. Use Value: 10 nC total gate charge reduces driver losses and enables direct MCU PWM control without buffer stages. |
Use Scenario: Constant-current dimming control for indicator LEDs or status lighting in handheld test equipment. IC Role / Device Role / Timing Role: Low-side current sink switched via PWM to regulate average LED current. Use Value: 0.65 V gate threshold ensures stable conduction even with aging LDO outputs or weak pull-ups, preventing flicker. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | RDS(on) = 45 mΩ (typ) at VGS = 4.5 V; higher ID rating (3.8 A); same SOT23 package. | Better suited for higher-current loads (>2 A continuous) where lower conduction loss is prioritized. | Select DMN2004LK-7 when thermal headroom is constrained and board layout allows same footprint. |
| AO3400 | RDS(on) = 40 mΩ (max) at VGS = 10 V; VGS(th) = 0.8–1.5 V - less robust at 2.5 V drive. | Requires ≥3.3 V gate drive for full enhancement; not recommended for 1.8 V/2.5 V logic interfaces. | Choose AO3400 only if system uses 3.3 V+ GPIOs and needs marginally lower RDS(on) at higher VGS. |
Compared with SI2302DS,215, DMN2004LK-7 delivers lower conduction loss at identical drive voltage but shares identical thermal constraints; AO3400 offers lower RDS(on) only at 10 V gate bias and risks incomplete turn-on under 2.5 V logic, making SI2302DS,215 the most robust choice for mixed-voltage embedded systems.
Availability
SI2302DS,215 is available at Aetrix Electronics and suitable for battery management, portable DC-DC conversion, and load switching applications requiring stable component supply across industrial, medical, and consumer electronics programs.
Supply support for SI2302DS,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with focus on automotive, industrial, computing, and wearable markets.
SI2302DS,215 belongs to Nexperia's TrenchMOS™ logic-level power MOSFET family, engineered for high-efficiency, space-constrained switching in portable and battery-operated systems.
FAQ
What is the maximum continuous drain current for SI2302DS,215 at 70 °C ambient?
The SI2302DS,215 supports 2 A continuous drain current at Tsp = 70 °C, as specified in Table 3 (Limiting Values). This derating reflects thermal constraints of the SOT23 package and must be verified against actual board-level thermal performance using the normalized current curve in Figure 2. The SI2302DS,215 remains functional up to 150 °C junction temperature.
Is SI2302DS,215 suitable for 1.8 V logic-level gate drive?
Yes - the SI2302DS,215 has a typical gate threshold voltage (VGS(th)) of 0.65 V and guaranteed turn-on at VGS ≥ 2.5 V, making it compatible with 1.8 V systems when driven through appropriate buffering or with margin. Full enhancement (RDS(on) ≤ 115 mΩ) is confirmed at VGS = 2.5 V per Table 5. The SI2302DS,215 does not require level shifters in most 1.8 V/2.5 V microcontroller applications.
What is the thermal resistance from junction to solder point for SI2302DS,215?
The SI2302DS,215 has a thermal resistance Rth(j-sp) of 150 K/W when mounted on a metal-clad substrate, as stated in Table 4. This value applies under standardized test conditions and enables calculation of junction temperature rise (ΔTj = Pdiss × 150 K/W). The SI2302DS,215's thermal performance is validated per Figure 4's transient impedance curve.
Does SI2302DS,215 include an integrated body diode?
Yes - the SI2302DS,215 incorporates a monolithic source-drain body diode with forward voltage VSD = 0.8–1.2 V at IS = 1.6 A and Tj = 25 °C (Table 5). This diode supports freewheeling in inductive loads and reverse-polarity protection. Its characteristics are fully characterized in Figure 12, and the SI2302DS,215 datasheet confirms its use in synchronous rectification and flyback topologies.
What is the peak pulsed drain current rating for SI2302DS,215?
The SI2302DS,215 is rated for 10 A peak drain current (IDM) under pulsed conditions: Tsp = 25 °C, pulse width ≤10 µs, and duty cycle low enough to avoid thermal accumulation (Figure 3). This rating supports short-circuit protection and inrush current limiting. The SI2302DS,215 maintains safe operation within its SOA boundary up to 100 V·A in the 10 µs region.
SI2302DS,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 85mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id:
- 650mV @ 1mA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 10 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 230 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 830mW (Tc)
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23 (TO-236AB)
SI2302DS,215 FAQ
1.How can I place an order for SI2302DS,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI2302DS,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI2302DS,215 reliable?
The price and inventory of SI2302DS,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2302DS,215 is usually 5 days.
3.What payment methods are accepted for SI2302DS,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2302DS,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI2302DS,215?
SI2302DS,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI2302DS,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI2302DS,215?
For technical support, including SI2302DS,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2302DS,215 requirements.
6.How does Aetrix verify that SI2302DS,215 is sourced from the original manufacturer or authorized distributors?
All SI2302DS,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2302DS,215 meets industry standards.
7.What is the process for return or replacement of SI2302DS,215?
All SI2302DS,215 units undergo pre-shipment inspection (PSI). If there is an issue with SI2302DS,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI2302DS,215 part is unused and in its original packaging.
Return procedure for SI2302DS,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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