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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. SI2304DS,215

Name: SI2304DS,215
Brand: Nexperia USA Inc.
SKU: SI2304DS,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI2304DS,215

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SI2304DS,215.pdf

Description:: MOSFET N-CH 30V 1.7A TO236AB

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Product details

Overview

SI2304DS,215 from Nexperia (formerly Philips Semiconductors) is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT23 package, rated for 30 V V_DS, 1.7 A continuous drain current at 25 °C, and 117 mΩ R_DS(on) at V_GS = 10 V. It serves as a high-speed, low-loss switching element in battery-powered DC-DC converters and load-switching circuits.

For engineers reviewing the SI2304DS,215 datasheet, SI2304DS,215 pinout, SI2304DS,215 application, or SI2304DS,215 equivalent, key selection criteria include verified R_DS(on) at 4.5 V gate drive, sub-100 ns switching times, thermal resistance to solder point (100 K/W), and SOT23 footprint compatibility with space-constrained portable designs.

Technical Context

This discrete MOSFET employs TrenchMOS™ technology to achieve low on-resistance and fast switching with minimal gate charge (Q_g(tot) = 4.6 nC). Its gate threshold voltage (V_GS(th)) ranges from 1.5 V to 2.0 V at 25 °C, enabling reliable turn-on with standard logic-level drivers.

The device integrates a built-in source-drain diode with 0.7–1.2 V forward voltage at 0.83 A and 69 ns reverse recovery time, supporting synchronous rectification and flyback operation. Thermal design is anchored by R_th(j-sp) = 100 K/W and a maximum junction temperature of 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage in DC applications without avalanche stress.
I_D (DC)	1.7 A at T_sp = 25 °C - Continuous current capability under standard PCB mounting conditions.
R_DS(on)	117 mΩ at V_GS = 10 V, I_D = 500 mA - Low conduction loss enabling >90% efficiency in 3.3 V–5 V buck stages.
Q_g(tot)	4.6 nC - Enables fast switching with minimal driver power and reduced EMI in 1–2 MHz converters.
t_r/t_f	7.5/13 ns - Supports high-frequency PWM control with tight dead-time margins.
V_GS(th)	1.5–2.0 V at 25 °C - Ensures robust turn-on with 3.3 V microcontroller GPIOs without level-shifting.
T_j(max)	150 °C - Allows operation in sealed enclosures or near heat-generating components.

Pinout & Package

SOT23 plastic surface-mount package (JEDEC TO-236AB), 3-pin, subminiature footprint (2.9 × 1.3 × 1.0 mm), optimized for automated assembly and thermal relief via solder-pad exposure.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; accepts logic-level voltage (0–20 V); requires <4.6 nC charge for full enhancement.
2	Source (S)	Reference node for gate drive and current return path; tied to system ground in low-side switch configuration.
3	Drain (D)	Power output terminal; connects to load or inductor; handles up to 30 V and 1.7 A with 117 mΩ conduction loss.

Key Features

Feature	Design Value
TrenchMOS™ technology	Enables 117 mΩ R_DS(on) in SOT23 - delivers performance comparable to larger packages without layout penalty.
Logic-level gate drive	V_GS(th) ≤ 2.0 V ensures full enhancement from 3.3 V MCU outputs - eliminates need for gate drivers in portable systems.
Fast switching	7.5 ns rise / 13 ns fall time minimizes transition losses in 1–3 MHz DC-DC topologies.
Integrated body diode	69 ns t_rr and 0.7–1.2 V V_SD support efficient synchronous rectification and freewheeling in buck/boost converters.
Thermal robustness	R_th(j-sp) = 100 K/W allows 0.83 W dissipation on standard 2-layer FR4 - simplifies thermal design in wearables and IoT nodes.

Applications

Battery Protection Circuit

USB Power Switch

Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: Low-side load switch controlling discharge path; responds within microseconds to fault signals from protection ICs.

Use Value: 117 mΩ R_DS(on) limits voltage drop to <200 mV at 1.7 A, preserving battery runtime and reducing thermal stress on PCB traces.

Use Scenario: Hot-swap enable/disable for USB 2.0 peripheral ports in portable hubs and docking stations.

IC Role / Device Role / Timing Role: High-side or low-side power gate; driven directly by 3.3 V USB controller GPIOs.

Use Value: Logic-level V_GS(th) and 4.6 nC Q_g ensure clean, bounce-free insertion/removal sequencing without external level shifters or drivers.

Step-Down DC-DC Converter

LED Driver Load Switch

Use Scenario: Synchronous rectifier in 3.3 V output buck converter for ultra-low-power microcontrollers.

IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode; commutated at 2 MHz with precise timing alignment.

Use Value: 69 ns t_rr and low Q_gd (1.35–1.83 nC) suppress shoot-through risk and reduce switching losses by >35% vs. diode solution.

Use Scenario: On/off control of white LED strings in smart lighting modules and indicator panels.

IC Role / Device Role / Timing Role: Constant-current load switch; pulsed at 1–10 kHz for dimming or status signaling.

Use Value: 1.7 A peak rating and 30 V V_DS accommodate transient surges during cold-start and allow series-string configurations up to 8 LEDs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 100 mΩ @ 4.5 V (vs. 190 mΩ for SI2304DS at same V_GS); Q_g = 5.2 nC.	Better efficiency below 4.5 V drive but higher gate charge increases driver loading.	Prefer when gate drive is ≥4.5 V and lowest conduction loss is critical; verify thermal margin with higher P_tot.
AO3400	R_DS(on) = 40 mΩ @ 10 V (vs. 117 mΩ); V_GS(th) = 0.7–1.4 V - more sensitive but less noise-immune.	Higher leakage (I_DSS up to 1 µA) and lower V_BR (30 V nominal, derated above 85 °C).	Choose for ultra-low R_DS(on) in thermally relaxed layouts; avoid in high-temp or low-leakage battery hold-off roles.

Compared with DMN2004LK-7 and AO3400, the SI2304DS,215 offers superior gate noise immunity due to its 1.5–2.0 V V_GS(th), tighter R_DS(on) tolerance across temperature, and proven reliability in long-life portable equipment - making it optimal for cost-sensitive, thermally constrained battery management where consistency matters more than absolute minimum on-resistance.

Availability

SI2304DS,215 is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, and step-down DC-DC converters requiring stable component supply across extended production lifecycles.

Supply support for SI2304DS,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia, formerly Philips Semiconductors, is a global leader in discrete, logic, and MOSFET solutions, specializing in high-volume, automotive-qualified, and energy-efficient semiconductor components.

The SI2304DS belongs to Nexperia's TrenchMOS™ logic-level power MOSFET product line, engineered specifically for space-constrained, battery-operated applications demanding low gate-threshold voltage, fast switching, and robust thermal performance in SOT23 packaging.

FAQ

What is the maximum continuous drain current for SI2304DS,215 at 100 °C solder point temperature?

At T_sp = 100 °C, the normalized continuous drain current drops to 1.1 A per Figure 2 in the datasheet. This derating reflects thermal limits of the SOT23 package on standard PCBs and must be applied in enclosed or high-ambient environments to prevent junction overheating beyond 150 °C.

Can SI2304DS,215 be used as a high-side switch with 3.3 V gate drive?

No - SI2304DS,215 is an N-channel MOSFET requiring gate voltage higher than the source to conduct. As a high-side switch, it would need a gate drive ≥3.3 V + V_DS drop, which 3.3 V alone cannot provide. It is designed for low-side switching; use a P-channel device like PMV21EN for true 3.3 V high-side operation.

What is the safe operating area (SOA) limitation at DC for SI2304DS,215?

Per Figure 3, the DC SOA is bounded by R_DS(on)-limited conduction (V_DS = I_D × 0.117 Ω), thermal limit (P_tot = 0.83 W), and V_DS ≤ 30 V. At 10 V V_DS, maximum DC current is ~7 A only if heatsinking reduces R_th(j-sp); on standard FR4, practical limit remains 1.7 A at 25 °C T_sp.

Does SI2304DS,215 have avalanche rating or ruggedness specification?

No - the datasheet does not specify unclamped inductive switching (UIS) capability or avalanche energy rating. It is not characterized for repetitive avalanche operation. Designers must implement snubbers or clamp circuits to limit V_DS overshoot during inductive turn-off to stay within the 30 V V_DS limiting value.

SI2304DS,215 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 1.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 117mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 4.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 195 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 830mW (Tc)

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

SI2304DS,215 FAQ

1.How can I place an order for SI2304DS,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI2304DS,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI2304DS,215 reliable?

The price and inventory of SI2304DS,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2304DS,215 is usually 5 days.

3.What payment methods are accepted for SI2304DS,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2304DS,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI2304DS,215?

SI2304DS,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI2304DS,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI2304DS,215?

For technical support, including SI2304DS,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2304DS,215 requirements.

6.How does Aetrix verify that SI2304DS,215 is sourced from the original manufacturer or authorized distributors?

All SI2304DS,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2304DS,215 meets industry standards.

7.What is the process for return or replacement of SI2304DS,215?

All SI2304DS,215 units undergo pre-shipment inspection (PSI). If there is an issue with SI2304DS,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI2304DS,215 part is unused and in its original packaging.

Return procedure for SI2304DS,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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