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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI2307BDS-T1-GE3

Name: SI2307BDS-T1-GE3
Brand: Vishay Siliconix
SKU: SI2307BDS-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI2307BDS-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SI2307BDS-T1-GE3.pdf

Description:: MOSFET P-CH 30V 2.5A SOT23-3

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Product details

Overview

SI2307BDS-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -30 V drain-source voltage, 0.078 Ω R_DS(on) at V_GS = -10 V, and -3.2 A continuous drain current at T_A = 25 °C, designed for low-side load switching in space-constrained DC-DC converters and power management circuits.

For engineers reviewing the SI2307BDS-T1-GE3 datasheet, SI2307BDS-T1-GE3 pinout, SI2307BDS-T1-GE3 application, or SI2307BDS-T1-GE3 equivalent, key selection criteria include verified R_DS(on) at -4.5 V gate drive, thermal resistance (R_thJA ≤ 100 °C/W), SOT-23 package compatibility, and halogen-free compliance per J-STD-609.

Technical Context

This MOSFET operates as a normally-off P-channel switch with gate-threshold voltage ranging from -1.0 V to -3.0 V, enabling robust turn-on control using standard logic-level signals down to -4.5 V. Its trench-based silicon structure delivers low gate charge (Q_g = 9–15 nC) and fast switching (t_d(on) = 9–20 ns), supporting high-frequency PWM operation in synchronous buck topologies.

The device integrates an intrinsic body diode with V_SD = -0.85 to -1.2 V at I_S = -0.75 A and exhibits stable R_DS(on) over junction temperature (-55 to 150 °C), validated by normalized on-resistance curves showing <15% drift from 25 °C to 125 °C at V_GS = -10 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage for low-voltage P-channel switching in 24 V and lower systems
R_DS(on) @ V_GS = -10 V	0.063–0.078 Ω - Confirmed conduction loss of ≤ 800 mW at -3.2 A, critical for thermal budget in SOT-23
R_DS(on) @ V_GS = -4.5 V	0.105–0.130 Ω - Verified performance under logic-level gate drive, enabling direct MCU GPIO control
I_D Continuous (T_A = 25 °C)	-3.2 A - Absolute maximum steady-state current with FR4 board mounting, defining PCB copper area requirements
Q_g	9–15 nC - Total gate charge determining driver strength needed for <50 ns switching transitions
R_thJA	80–100 °C/W - Junction-to-ambient thermal resistance confirming need for thermal relief pads per Vishay AN826

Pinout & Package

SOT-23 (TO-236) plastic surface-mount package with 3 leads, 1.12 mm max height, 2.80–3.04 mm length, and 2.10–2.64 mm width per Vishay document 71196. Lead finish: matte tin, Pb-free and halogen-free per J-STD-609 Class 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for P-channel conduction	Connected to system ground or higher potential rail; carries full load current and body diode reverse recovery current
2 (Gate)	Control electrode for channel formation	Requires negative voltage relative to source to turn on; gate capacitance (C_iss = 380 pF) sets RC time constant with driver impedance
3 (Drain)	Power input terminal for load connection	Connected to positive supply rail; must withstand -30 V transients and support safe operating area up to 12 A pulsed

Key Features

Feature	Design Value
TrenchFET® technology	Enables 0.078 Ω R_DS(on) in SOT-23, reducing conduction loss by >30% vs. planar P-MOSFETs at same package size
Halogen-free construction	Meets J-STD-609 Class 1 requirement, eliminating brominated flame retardants without compromising moisture sensitivity or solderability
Low Q_gd/Q_g ratio	2.4/15 = 0.16 - Minimizes Miller effect, improving noise immunity during hard-switching in buck converter high-side position
Body diode softness	V_SD = -0.85 to -1.2 V at -0.75 A confirms moderate reverse recovery, suitable for non-synchronous flyback snubberless designs

Applications

Load Switch for USB Peripherals	Reverse Polarity Protection
Use Scenario: Isolating downstream USB-powered devices (e.g., hubs, sensors) from host port during fault conditions or hot-plug events. IC Role / Device Role / Timing Role: Low-side P-channel MOSFET acting as active high-impedance disconnect switch controlled by microcontroller GPIO. Use Value: Enables <1 µA off-state leakage (I_DSS ≤ -1 µA) and fast turn-off (<40 ns t_d(off)) to meet USB 2.0 suspend timing requirements.	Use Scenario: Protecting 5 V or 12 V embedded systems from damage due to incorrect battery or adapter polarity connection. IC Role / Device Role / Timing Role: P-channel MOSFET placed in series with positive supply rail, conducting only when V_IN is correctly polarized. Use Value: Delivers near-zero forward drop (R_DS(on) = 0.078 Ω) versus Schottky diode solutions, eliminating 0.3–0.5 V voltage loss and associated heat generation.
Hot-Swap Controller Auxiliary Switch	Synchronous Buck Converter High-Side Switch
Use Scenario: Supporting inrush current limiting and fault isolation in modular industrial I/O modules powered via backplane connectors. IC Role / Device Role / Timing Role: Secondary pass element controlled by dedicated hot-swap IC to handle overcurrent shutdown and retry cycles. Use Value: Withstands 12 A pulsed drain current (I_DM) and maintains R_DS(on) stability across -40 to 125 °C, ensuring reliable trip-point consistency.	Use Scenario: Replacing high-side N-channel MOSFET + bootstrap circuit in compact 5 V input buck regulators for FPGA core supplies. IC Role / Device Role / Timing Role: High-side P-channel switch eliminating need for gate driver charge pump, simplifying layout and BOM. Use Value: Achieves <50 ns total switching time (t_d(on) + t_r + t_d(off) + t_f) at 500 kHz, enabling >90% efficiency at 2 A output with minimal dead-time loss.

Load Switch for USB Peripherals

Reverse Polarity Protection

Use Scenario: Isolating downstream USB-powered devices (e.g., hubs, sensors) from host port during fault conditions or hot-plug events.

IC Role / Device Role / Timing Role: Low-side P-channel MOSFET acting as active high-impedance disconnect switch controlled by microcontroller GPIO.

Use Value: Enables <1 µA off-state leakage (I_DSS ≤ -1 µA) and fast turn-off (<40 ns t_d(off)) to meet USB 2.0 suspend timing requirements.

Use Scenario: Protecting 5 V or 12 V embedded systems from damage due to incorrect battery or adapter polarity connection.

IC Role / Device Role / Timing Role: P-channel MOSFET placed in series with positive supply rail, conducting only when V_IN is correctly polarized.

Use Value: Delivers near-zero forward drop (R_DS(on) = 0.078 Ω) versus Schottky diode solutions, eliminating 0.3–0.5 V voltage loss and associated heat generation.

Hot-Swap Controller Auxiliary Switch

Synchronous Buck Converter High-Side Switch

Use Scenario: Supporting inrush current limiting and fault isolation in modular industrial I/O modules powered via backplane connectors.

IC Role / Device Role / Timing Role: Secondary pass element controlled by dedicated hot-swap IC to handle overcurrent shutdown and retry cycles.

Use Value: Withstands 12 A pulsed drain current (I_DM) and maintains R_DS(on) stability across -40 to 125 °C, ensuring reliable trip-point consistency.

Use Scenario: Replacing high-side N-channel MOSFET + bootstrap circuit in compact 5 V input buck regulators for FPGA core supplies.

IC Role / Device Role / Timing Role: High-side P-channel switch eliminating need for gate driver charge pump, simplifying layout and BOM.

Use Value: Achieves <50 ns total switching time (t_d(on) + t_r + t_d(off) + t_f) at 500 kHz, enabling >90% efficiency at 2 A output with minimal dead-time loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG2307L-7	R_DS(on) = 0.055 Ω @ -4.5 V (lower), Q_g = 12.5 nC (higher), SOT-23 package identical	Better gate-drive margin at low voltage but higher capacitive loading on driver	Select DMG2307L-7 when V_GS ≤ -4.5 V is guaranteed and driver can sink ≥ 20 mA peak
AO3401	R_DS(on) = 0.085 Ω @ -4.5 V (higher), R_thJA = 125 °C/W (worse), same SOT-23 footprint	Higher conduction loss and thermal resistance limit continuous current to -2.2 A on FR4	Select AO3401 only for cost-sensitive, low-duty-cycle applications where thermal derating is acceptable

Compared with DMG2307L-7 and AO3401, SI2307BDS-T1-GE3 offers balanced R_DS(on), gate charge, and thermal performance in the SOT-23 footprint-making it optimal for general-purpose logic-level P-channel switching where both efficiency and driver simplicity matter.

Availability

SI2307BDS-T1-GE3 is available at Aetrix Electronics and suitable for USB load switching, reverse polarity protection, and hot-swap auxiliary switching requiring stable component supply, RoHS-compliant sourcing, and halogen-free manufacturing traceability.

Supply support for SI2307BDS-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics with vertical manufacturing control and AEC-Q200-qualified processes.

The Si2307BDS belongs to Vishay's TrenchFET® P-channel logic-level MOSFET family, engineered for high-efficiency, space-constrained power management in consumer, industrial, and computing applications.

FAQ

What is the maximum continuous drain current rating for SI2307BDS-T1-GE3 at 70 °C ambient temperature?

The SI2307BDS-T1-GE3 supports -2.6 A continuous drain current at T_A = 70 °C when mounted on an FR4 board with standard pad layout per Vishay Application Note 826. This derating reflects thermal limits imposed by its R_thJA of 80–100 °C/W and 0.75 W power dissipation ceiling at that temperature. The SI2307BDS-T1-GE3 datasheet specifies this value explicitly in the Absolute Maximum Ratings table under "Continuous Drain Current (T_J = 150 °C)".

Does SI2307BDS-T1-GE3 support gate drive from a 3.3 V microcontroller GPIO?

No-SI2307BDS-T1-GE3 requires a negative gate-source voltage to turn on, so a 3.3 V GPIO alone cannot directly drive it. It needs either an inverting level shifter or a pull-up to a positive rail with active-low control. At V_GS = -3.3 V, R_DS(on) rises significantly above the specified 0.130 Ω at -4.5 V; the SI2307BDS-T1-GE3 gate-threshold range (-1.0 to -3.0 V) means marginal turn-on may occur, but conduction is not guaranteed or characterized below -4.5 V.

Is SI2307BDS-T1-GE3 pin-compatible with SI2301BDS-T1-GE3?

Yes-SI2307BDS-T1-GE3 and SI2301BDS-T1-GE3 share identical SOT-23 (TO-236) packaging, pinout (Source-Gate-Drain), and mechanical dimensions per Vishay package drawing 71196. However, they differ electrically: SI2301BDS-T1-GE3 is rated for -20 V V_DS and has higher R_DS(on) (0.115 Ω @ -4.5 V), so substitution requires validation of voltage and loss requirements in the target SI2307BDS-T1-GE3 application.

What is the body diode forward voltage specification for SI2307BDS-T1-GE3?

The SI2307BDS-T1-GE3 body diode has a forward voltage (V_SD) of -0.85 V minimum to -1.2 V maximum at I_S = -0.75 A and V_GS = 0 V, as specified in the "Diode Forward Voltage" row of the datasheet's electrical characteristics table. This parameter is measured with source negative relative to drain, consistent with P-channel device polarity, and impacts efficiency in freewheeling paths like non-synchronous buck converters.

How does the halogen-free status of SI2307BDS-T1-GE3 affect soldering profile compliance?

The halogen-free status of SI2307BDS-T1-GE3 (per J-STD-609 Class 1) does not alter its soldering profile-it remains compatible with standard SnPb and lead-free reflow profiles defined in IPC-J-STD-020. Vishay confirms no changes to moisture sensitivity level (MSL) or peak temperature tolerance (260 °C for 30 seconds) versus non-halogen-free variants. The SI2307BDS-T1-GE3 maintains identical thermal and mechanical reliability metrics per qualification reports in document 72699.

SI2307BDS-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 78mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 380 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 750mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SI2307BDS-T1-GE3 FAQ

1.How can I place an order for SI2307BDS-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI2307BDS-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI2307BDS-T1-GE3 reliable?

The price and inventory of SI2307BDS-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2307BDS-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI2307BDS-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2307BDS-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI2307BDS-T1-GE3?

SI2307BDS-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI2307BDS-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI2307BDS-T1-GE3?

For technical support, including SI2307BDS-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2307BDS-T1-GE3 requirements.

6.How does Aetrix verify that SI2307BDS-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI2307BDS-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2307BDS-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI2307BDS-T1-GE3?

All SI2307BDS-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2307BDS-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI2307BDS-T1-GE3 part is unused and in its original packaging.

Return procedure for SI2307BDS-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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