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Vishay Siliconix SI2314EDS-T1-GE3
- Part No.:
- SI2314EDS-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SI2314EDS-T1-GE3.pdf
- Description:
- MOSFET N-CH 20V 3.77A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:5,967
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Product details
Overview
SI2314EDS-T1-GE3 from Vishay Siliconix is a lead-free and halogen-free N-channel TrenchFET® power MOSFET rated for 20 V drain-source voltage, with RDS(on) = 0.033 Ω at VGS = 4.5 V and continuous drain current of 4.9 A at TA = 25 °C. It serves as a low-side load switch in Li-ion battery protection circuits, delivering fast switching (td(off) ≤ 20 µs) and robust ESD tolerance (3000 V HBM).
For engineers reviewing the SI2314EDS-T1-GE3 datasheet, SI2314EDS-T1-GE3 pinout, SI2314EDS-T1-GE3 application, or SI2314EDS-T1-GE3 equivalent, key selection criteria include its 1.8 V logic-level gate drive capability, SOT-23 package thermal resistance (RthJA = 166 °C/W), and avalanche energy rating (EAS = 11.25 mJ) for transient robustness.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance at low gate voltages, enabling direct interface with 1.8 V, 2.5 V, and 3.3 V microcontroller GPIOs. Its gate threshold voltage (VGS(th) = 0.45–0.95 V) ensures reliable turn-on while minimizing shoot-through risk in half-bridge configurations.
The device integrates an intrinsic body diode with VSD = 0.8–1.2 V at IS = 1.0 A and exhibits Qg = 14.0 nC at VGS = 4.5 V, supporting efficient high-frequency switching up to several hundred kHz in compact DC-DC and load-switching applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum blocking voltage for battery-input-side switching in single-cell Li-ion systems (2.7–4.35 V nominal). |
| RDS(on) @ VGS = 4.5 V | 0.033 Ω - Enables <165 mW conduction loss at 4.9 A, suitable for thermally constrained PCB layouts. |
| ID Continuous @ TA = 25 °C | 4.9 A - Supports typical load currents in portable power path management without forced airflow. |
| Qg | 14.0 nC - Determines gate drive power requirement; compatible with low-current MCU GPIOs via external buffer if needed. |
| EAS | 11.25 mJ - Specifies single-pulse avalanche energy handling, critical for inductive load switching reliability. |
| VGS(th) | 0.45–0.95 V - Ensures turn-on with logic-level signals and provides margin against false triggering from noise. |
| TJ Range | −55 to +150 °C - Qualified for industrial and automotive cabin-temperature environments. |
Pinout & Package
SI2314EDS-T1-GE3 is housed in a standard SOT-23 (TO-236) surface-mount package with 3 terminals: Gate (G), Source (S), and Drain (D). The package measures 2.80–3.04 mm × 2.10–2.64 mm × 0.89–1.12 mm (L × W × H) and features gull-wing leads for reflow compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Pin 1) | Gate control input | Receives logic-level voltage to modulate channel conductivity; requires <±12 V absolute max per datasheet. |
| S (Pin 2) | Source reference node | Common return path for load current; tied to system ground in low-side switch configuration. |
| D (Pin 3) | Drain output terminal | Connects to battery or power rail; carries full load current and must be routed with adequate copper area for thermal dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers 33% lower RDS(on) vs. planar MOSFETs at same die size, enabling smaller footprint for given current rating. |
| 3000 V HBM ESD protection | Eliminates need for external ESD clamps in handheld and wearable designs where human contact is frequent. |
| Halogen-free construction | Complies with IEC 61249-2-21 and RoHS Directive 2011/65/EU, supporting environmentally regulated end markets. |
| Logic-level gate drive (1.8 V capable) | Permits direct connection to low-voltage MCUs (e.g., ARM Cortex-M0+, MSP430) without level-shifting circuitry. |
| Low Qgd/Qg ratio (2.1/14.0 nC) | Reduces Miller-induced switching instability and improves controllability during hard commutation events. |
Applications
| Li-ion Battery Protection | USB Power Delivery Switch |
|---|---|
Use Scenario: Isolating defective cells or overcharged conditions in 1S battery packs using integrated protection ICs. IC Role / Device Role / Timing Role: Low-side main discharge FET controlled by protection ASIC to interrupt current path within microseconds. Use Value: RDS(on) ≤ 0.051 Ω at 1.8 V gate drive enables ultra-low quiescent loss during normal operation while sustaining 3.9 A at 70 °C ambient. |
Use Scenario: Enabling/disabling VBUS power path in USB-C receptacles compliant with USB PD 3.0 specifications. IC Role / Device Role / Timing Role: Load switch managing inrush current and reverse-current blocking between source and sink devices. Use Value: Fast tf ≤ 9 µs and low Ciss ensure clean hot-plug transitions without bus voltage droop or glitch propagation. |
| Smartphone Power Management | Wearable Device Load Control |
Use Scenario: Controlling power to RF modules, cameras, or sensors in mobile handsets to minimize standby leakage. IC Role / Device Role / Timing Role: Always-on load switch managed by PMIC or application processor GPIO for dynamic power gating. Use Value: VGS(th) range and low IDSS (<1 µA at 25 °C) prevent unintended turn-on and reduce system-level sleep current below 1 µA. |
Use Scenario: Managing power to Bluetooth LE radios and accelerometers in hearables and fitness trackers. IC Role / Device Role / Timing Role: Compact, low-thermal-footprint switch enabling rapid on/off cycling synchronized with sensor duty cycles. Use Value: SOT-23 package and RthJF = 50 °C/W allow mounting directly adjacent to heat-sensitive components without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2014LSD-13 | RDS(on) = 0.028 Ω @ 4.5 V, but higher Qg = 17.5 nC; same SOT-23 package and 20 V rating. | Better conduction efficiency at high duty cycle, but increased gate drive demand limits use with weak GPIOs. | Prefer DMN2014LSD-13 when minimizing I²R loss dominates over gate drive simplicity. |
| AO3400 | RDS(on) = 0.026 Ω @ 4.5 V, but VGS(th) = 0.8–1.8 V and no halogen-free certification per J-STD-609. | Higher threshold increases noise immunity but reduces 1.8 V compatibility; not qualified for eco-regulated markets. | Select AO3400 only for cost-sensitive industrial applications where halogen-free compliance is not required. |
Compared with DMN2014LSD-13 and AO3400, SI2314EDS-T1-GE3 offers the narrowest VGS(th) range and certified halogen-free status, making it optimal for space-constrained, low-voltage, and environmentally regulated consumer electronics.
Availability
SI2314EDS-T1-GE3 is available at Aetrix Electronics and suitable for Li-ion battery protection, USB power delivery switching, and smartphone power management requiring stable component supply across high-mix production runs.
Supply support for SI2314EDS-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and consumer applications.
The Si2314EDS belongs to Vishay's TrenchFET® Gen III logic-level MOSFET family, engineered specifically for low-voltage, high-efficiency load switching in portable and battery-powered systems.
FAQ
What is the maximum continuous drain current for SI2314EDS-T1-GE3 at 70 °C ambient temperature?
The SI2314EDS-T1-GE3 supports 3.9 A continuous drain current at TA = 70 °C under steady-state conditions on a 1" × 1" FR4 board. This value reflects thermal derating due to reduced power dissipation (0.48 W) and accounts for junction-to-ambient thermal resistance (RthJA = 166 °C/W) in standard mounting.
Does SI2314EDS-T1-GE3 support 1.8 V logic-level gate drive?
Yes, SI2314EDS-T1-GE3 is fully characterized for 1.8 V gate drive: RDS(on) = 0.051 Ω at VGS = 1.8 V and ID = 3.9 A. Its VGS(th) minimum of 0.45 V ensures strong enhancement-mode behavior and reliable turn-on with 1.8 V microcontrollers.
What is the avalanche energy rating of SI2314EDS-T1-GE3 and how is it applied in circuit design?
The SI2314EDS-T1-GE3 has a single-pulse avalanche energy rating (EAS) of 11.25 mJ, measured with L = 0.1 mH. This parameter validates safe operation during inductive switching transients-such as motor driver flyback or relay coil de-energization-without requiring external snubbers in many low-energy cases.
Is SI2314EDS-T1-GE3 halogen-free and RoHS-compliant?
Yes, SI2314EDS-T1-GE3 is both halogen-free per IEC 61249-2-21 and RoHS-compliant (2011/65/EU). The "-GE3" suffix explicitly denotes lead-free and halogen-free construction, verified through material declarations and manufacturing process controls by Vishay.
What is the gate charge profile of SI2314EDS-T1-GE3 and why does it matter for switching performance?
SI2314EDS-T1-GE3 has Qg = 14.0 nC, Qgs = 1.5 nC, and Qgd = 2.1 nC at VDS = 10 V and VGS = 4.5 V. These values determine gate driver sizing and switching speed: low Qgd/Qg ratio improves controllability, while total Qg sets minimum drive current for target fSW.
SI2314EDS-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.77A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 33mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 750mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SI2314EDS-T1-GE3 FAQ
1.How can I place an order for SI2314EDS-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI2314EDS-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI2314EDS-T1-GE3 reliable?
The price and inventory of SI2314EDS-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2314EDS-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI2314EDS-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2314EDS-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI2314EDS-T1-GE3?
SI2314EDS-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI2314EDS-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI2314EDS-T1-GE3?
For technical support, including SI2314EDS-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2314EDS-T1-GE3 requirements.
6.How does Aetrix verify that SI2314EDS-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI2314EDS-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2314EDS-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI2314EDS-T1-GE3?
All SI2314EDS-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2314EDS-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI2314EDS-T1-GE3 part is unused and in its original packaging.
Return procedure for SI2314EDS-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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