Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI2316DS-T1-E3

Name: SI2316DS-T1-E3
Brand: Vishay Siliconix
SKU: SI2316DS-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SI2316DS-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SI2316DS-T1-E3.pdf

Description:: MOSFET N-CH 30V 2.9A SOT23-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:10,362

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SI2316DS-T1-E3 from Vishay Siliconix is a N-channel 30-V TrenchFET® power MOSFET in SOT-23 (TO-236) package, rated for 3.4 A continuous drain current at 25 °C, with R_DS(on) = 0.050 Ω at V_GS = 10 V and 0.085 Ω at V_GS = 4.5 V, used as a low-side battery switch in portable electronics.

For engineers reviewing the SI2316DS-T1-E3 datasheet, SI2316DS-T1-E3 pinout, SI2316DS-T1-E3 application, or SI2316DS-T1-E3 equivalent, key selection criteria include its Pb-free RoHS-compliant construction, thermal resistance (R_thJA = 130 °C/W max), gate threshold voltage (0.8 V min), and pulsed drain capability (16 A).

Technical Context

This discrete MOSFET uses trench-based silicon technology to achieve low on-resistance and fast switching. Its gate threshold voltage range (0.8–2.0 V) enables compatibility with 3.3 V and 5 V logic-level drive, while the integrated body diode supports reverse-current conduction in battery protection circuits.

The device operates within -55 °C to +150 °C junction temperature range and is characterized for steady-state and 5-second transient thermal performance. Absolute maximum ratings include V_DS = 30 V, V_GS = ±20 V, and P_D = 0.96 W at 25 °C ambient on FR4 board.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; suitable for single-cell Li-ion (≤4.2 V) and dual-cell alkaline (≤3 V × 2) battery systems.
R_DS(on) @ V_GS = 10 V	0.050 Ω - Enables <170 mW conduction loss at 3.4 A, critical for thermally constrained PCB layouts.
R_DS(on) @ V_GS = 4.5 V	0.085 Ω - Ensures reliable turn-on with standard 3.3 V GPIO or low-voltage PMIC outputs.
I_D (continuous, T_A = 25 °C)	3.4 A - Supports typical load currents in USB-powered accessories and smart battery packs.
Q_g	7 nC max - Limits gate drive power and switching transition time in high-frequency PWM control.
V_GS(th)	0.8 V min - Guarantees early turn-on onset, reducing shoot-through risk in half-bridge configurations.
R_thJA (steady state)	175 °C/W max - Defines thermal derating slope: ~5.7 °C/W per 100 mA rise in ambient-restricted enclosures.

Pinout & Package

SOT-23 (TO-236) surface-mount package with 3 leads: Drain (D), Gate (G), Source (S). Dimensions: 2.80–3.04 mm × 2.10–2.64 mm × 0.89–1.12 mm height; lead pitch = 0.95 mm.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal accepting logic-level voltage; requires ≤100 nA leakage current at ±20 V bias.
2 (S)	Source	Reference node for gate drive and current return path; tied to system ground in low-side switch topology.
3 (D)	Drain	High-current output terminal; electrically connected to internal die substrate and thermal pad (drain-connected foot).

Key Features

Feature	Design Value
TrenchFET® technology	Delivers industry-leading R_DS(on) × area efficiency for compact SOT-23 footprint without sacrificing ruggedness.
Pb-free and RoHS-compliant	Meets EU Directive 2011/65/EU; no lead exemptions applied-fully compliant termination finish.
Low gate charge (Q_g = 7 nC)	Reduces driver IC loading and dynamic losses in 100–500 kHz switching applications like load switching and hot-swap control.
Integrated body diode	Enables bidirectional current handling in battery backup paths; V_SD = 1.2 V max at 0.8 A ensures predictable reverse conduction loss.
Specified for TJ = -55 to +150 °C	Validated operation across automotive cabin, industrial control, and outdoor IoT environments without derating below -40 °C.

Applications

Battery Protection Circuit	USB Power Switch
Use Scenario: Prevents over-discharge and short-circuit damage in single-cell Li-ion battery packs by disconnecting load when voltage drops below threshold. IC Role / Device Role / Timing Role: Low-side main switch controlled by battery management IC; conducts full pack current during normal operation. Use Value: R_DS(on) = 0.085 Ω at 4.5 V gate drive ensures <200 mW loss at 1.5 A, minimizing thermal impact on adjacent BMS components.	Use Scenario: Enables/disables VBUS power delivery to downstream peripherals in USB 2.0 host ports with overcurrent detection. IC Role / Device Role / Timing Role: Load switch placed between USB controller's power rail and connector; driven directly by GPIO. Use Value: Fast turn-on delay (9 ns) and rise time (9 ns) support rapid port enable/disable sequencing required by USB compliance tests.
Smartphone Power Management	Wireless Earbud Charging Case
Use Scenario: Isolates auxiliary rails (e.g., camera flash LED, SIM card power) to reduce standby current and extend battery life. IC Role / Device Role / Timing Role: Always-on, logic-controlled power gate managed by application processor or PMIC. Use Value: V_GS(th) = 0.8 V minimum allows direct interface with 1.8 V I/O domains, eliminating level-shifter components.	Use Scenario: Controls charging current flow from case battery to earbud battery during wired or wireless charging cycles. IC Role / Device Role / Timing Role: Bidirectional switch supporting both charge and discharge paths via body diode conduction. Use Value: Specified V_SD = 1.2 V max at 0.8 A ensures predictable forward voltage drop during reverse-current mode, simplifying thermal design.

Battery Protection Circuit

USB Power Switch

Use Scenario: Prevents over-discharge and short-circuit damage in single-cell Li-ion battery packs by disconnecting load when voltage drops below threshold.

IC Role / Device Role / Timing Role: Low-side main switch controlled by battery management IC; conducts full pack current during normal operation.

Use Value: R_DS(on) = 0.085 Ω at 4.5 V gate drive ensures <200 mW loss at 1.5 A, minimizing thermal impact on adjacent BMS components.

Use Scenario: Enables/disables VBUS power delivery to downstream peripherals in USB 2.0 host ports with overcurrent detection.

IC Role / Device Role / Timing Role: Load switch placed between USB controller's power rail and connector; driven directly by GPIO.

Use Value: Fast turn-on delay (9 ns) and rise time (9 ns) support rapid port enable/disable sequencing required by USB compliance tests.

Smartphone Power Management

Wireless Earbud Charging Case

Use Scenario: Isolates auxiliary rails (e.g., camera flash LED, SIM card power) to reduce standby current and extend battery life.

IC Role / Device Role / Timing Role: Always-on, logic-controlled power gate managed by application processor or PMIC.

Use Value: V_GS(th) = 0.8 V minimum allows direct interface with 1.8 V I/O domains, eliminating level-shifter components.

Use Scenario: Controls charging current flow from case battery to earbud battery during wired or wireless charging cycles.

IC Role / Device Role / Timing Role: Bidirectional switch supporting both charge and discharge paths via body diode conduction.

Use Value: Specified V_SD = 1.2 V max at 0.8 A ensures predictable forward voltage drop during reverse-current mode, simplifying thermal design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 0.045 Ω @ 4.5 V (lower), but V_DS = 20 V (reduced voltage margin)	Limited to ≤20 V systems; unsuitable for 24 V industrial backup or dual-cell alkaline inputs	Select when lower on-resistance is prioritized and system voltage never exceeds 20 V.
AO3400	R_DS(on) = 0.042 Ω @ 10 V, but Q_g = 12 nC (higher); halogen-free option not available	Higher gate charge increases driver losses above 200 kHz; lacks Pb-free/halogen-free dual certification	Choose for cost-sensitive consumer designs where RoHS+halogen-free compliance is not mandated.

Compared with DMN2004LK-7 and AO3400, SI2316DS-T1-E3 provides balanced trade-offs: sufficient 30 V rating for multi-chemistry battery systems, verified Pb-free/halogen-free compliance, and gate charge optimized for efficient 3.3 V logic drive without excessive driver complexity.

Availability

SI2316DS-T1-E3 is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, smartphone power management, and wireless earbud charging cases requiring stable component supply and long-term manufacturability.

Supply support for SI2316DS-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics since 1962.

The Si2316DS belongs to Vishay's TrenchFET® Gen III family, engineered specifically for space-constrained, high-efficiency battery-switching applications in portable and wearable electronics.

FAQ

What is the maximum continuous drain current for SI2316DS-T1-E3 at 70 °C ambient temperature?

The SI2316DS-T1-E3 supports 2.3 A continuous drain current at T_A = 70 °C under steady-state conditions on a 1" × 1" FR4 board. This value reflects thermal derating due to reduced power dissipation (P_D = 0.45 W) at elevated ambient temperatures, and must be validated against actual PCB layout and airflow conditions in the final design. The SI2316DS-T1-E3 datasheet specifies this limit in the Absolute Maximum Ratings table.

Is SI2316DS-T1-E3 compatible with 3.3 V microcontroller GPIOs?

Yes, SI2316DS-T1-E3 is fully compatible with 3.3 V GPIOs: its gate threshold voltage starts at 0.8 V (min), and R_DS(on) is guaranteed at 0.085 Ω with V_GS = 4.5 V - well within the 3.3 V logic-high range. The SI2316DS-T1-E3 delivers robust conduction even at marginal overdrive, making it suitable for direct drive without external level shifting.

Does SI2316DS-T1-E3 have an integrated body diode, and what is its forward voltage?

Yes, SI2316DS-T1-E3 includes a monolithic body diode with V_SD = 1.2 V maximum at I_S = 0.8 A and V_GS = 0 V. This diode enables reverse-current conduction in battery backup and charge-sharing paths. The SI2316DS-T1-E3 datasheet characterizes this parameter in the "Diode Forward Voltage" row of the specifications table.

What is the thermal resistance from junction to ambient (R_thJA) for SI2316DS-T1-E3 in steady-state operation?

The SI2316DS-T1-E3 has a maximum steady-state junction-to-ambient thermal resistance of 175 °C/W when mounted on a 1" × 1" FR4 board with standard copper pour. This value defines the worst-case temperature rise per watt of power dissipated and is critical for calculating safe operating area limits. The SI2316DS-T1-E3 specification sheet lists this in the Thermal Resistance Ratings section.

How does the halogen-free version differ from SI2316DS-T1-E3?

The halogen-free variant is SI2316DS-T1-GE3, which meets IEC 61249-2-21 requirements for bromine and chlorine content (<900 ppm each). SI2316DS-T1-E3 is Pb-free and RoHS-compliant but not halogen-free. Both share identical electrical specs and packaging; only material composition differs. The SI2316DS-T1-E3 ordering code explicitly denotes lead-free termination without halogen restriction.

SI2316DS-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 2.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id:: 800mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 215 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 700mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SI2316DS-T1-E3 FAQ

1.How can I place an order for SI2316DS-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI2316DS-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI2316DS-T1-E3 reliable?

The price and inventory of SI2316DS-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2316DS-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI2316DS-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2316DS-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI2316DS-T1-E3?

SI2316DS-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI2316DS-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI2316DS-T1-E3?

For technical support, including SI2316DS-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2316DS-T1-E3 requirements.

6.How does Aetrix verify that SI2316DS-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI2316DS-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2316DS-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI2316DS-T1-E3?

All SI2316DS-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2316DS-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI2316DS-T1-E3 part is unused and in its original packaging.

Return procedure for SI2316DS-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…