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Vishay Siliconix SI2316DS-T1-GE3
- Part No.:
- SI2316DS-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SI2316DS-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 2.9A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,694
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Product details
Overview
SI2316DS-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET in SOT-23 (TO-236) package, with RDS(on) = 0.050 Ω at VGS = 10 V and 0.085 Ω at VGS = 4.5 V, rated for 3.4 A continuous drain current at TA = 25 °C, used as a low-side battery switch in portable electronics.
For engineers reviewing the SI2316DS-T1-GE3 datasheet, SI2316DS-T1-GE3 pinout, SI2316DS-T1-GE3 application, or SI2316DS-T1-GE3 equivalent, key selection criteria include its Pb-free and halogen-free construction, gate threshold voltage of 0.8 V (min), 30-V VDS rating, thermal resistance RthJA up to 175 °C/W, and compatibility with 3.3-V and 5-V logic-level drive.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low on-resistance and fast switching in space-constrained DC power paths. Its gate threshold voltage (0.8–2.0 V) enables reliable turn-on with standard logic-level signals, while the integrated body diode supports reverse-current conduction in bidirectional load-switching topologies.
The device operates within -55 °C to +150 °C junction temperature range and is characterized for pulsed drain current up to 16 A. Thermal performance is specified for surface-mount operation on 1" × 1" FR4 board, with RthJF = 75 °C/W (max) enabling direct heat transfer from die to PCB copper via the exposed drain pad.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; suitable for 24-V nominal systems and USB PD input stages |
| RDS(on) @ 10 V | 0.050 Ω - Enables <170 mW conduction loss at 3.4 A; reduces self-heating in compact layouts |
| RDS(on) @ 4.5 V | 0.085 Ω - Ensures full enhancement with 3.3-V GPIO or low-voltage PMIC outputs |
| ID (continuous) | 3.4 A @ TA = 25 °C - Supports typical battery-switch loads in wearables and IoT sensors |
| VGS(th) | 0.8 V min - Guarantees turn-on with weak-drive sources such as microcontroller I/O pins |
| Qg | 7 nC max - Limits gate-drive energy and switching losses in high-frequency PWM control |
| RthJA | 175 °C/W max - Defines worst-case thermal rise under steady-state ambient conditions on standard PCB |
Pinout & Package
SOT-23 (TO-236) package with gull-wing leads, 3-terminal configuration, 1.4 mm × 2.9 mm footprint, 1.1 mm height, and exposed drain pad for thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Receives logic-level voltage to modulate channel conductivity; high input impedance minimizes drive current demand |
| 2 (Source) | Reference node | Common return path for load current; tied to system ground or battery negative in low-side switch configurations |
| 3 (Drain) | Power output node | Connected to load; electrically and thermally coupled to exposed metal pad for enhanced heat dissipation |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers industry-leading RDS(on) × area efficiency for minimal PCB real estate in battery-powered devices |
| Pb-free and halogen-free | Meets RoHS Directive 2011/65/EU Annex II and JEDEC JS709E material compliance requirements |
| Low gate charge (Qg ≤ 7 nC) | Reduces switching transition time and driver power consumption in 100–500 kHz load-switching applications |
| Integrated body diode | Enables freewheeling current during inductive load turn-off without external diode; VSD = 1.2 V max at 0.8 A |
| Specified RthJF | 75 °C/W max allows direct thermal coupling to PCB copper, improving reliability over ambient-rated RthJA |
Applications
| Portable Power Bank Switching | USB-C Port Protection |
|---|---|
Use Scenario: Controls power delivery from Li-ion cells to USB-C output ports in multi-cell portable chargers. IC Role / Device Role: Low-side load switch managing battery-to-port power path with overcurrent and thermal foldback support. Use Value: 0.085 Ω RDS(on) at 4.5 V ensures <220 mW loss at 1.5 A, minimizing heat buildup in sealed enclosures. | Use Scenario: Isolates downstream USB-C receptacle from upstream power source during hot-plug or fault events. IC Role / Device Role: Bidirectional power switch enabling VBUS enable/disable and reverse-current blocking via body diode orientation. Use Value: 30-V VDS rating provides 2× margin over 20-V USB PD 3.0 maximum, supporting robust fault tolerance. |
| Wireless Earbud Battery Management | Industrial Sensor Node Load Control |
Use Scenario: Enables/disables charging circuitry and audio amplifier supply in ultra-low-power wearable earbuds. IC Role / Device Role: Logic-controlled power gate between battery and subsystem rails, driven directly by MCU GPIO. Use Value: 0.8 V VGS(th) min ensures reliable turn-on with 1.8-V or 3.3-V microcontroller outputs without level-shifting. | Use Scenario: Powers intermittent measurement circuits (e.g., gas sensors, RTDs) in battery-operated industrial nodes. IC Role / Device Role: High-reliability load switch activated by timer or host MCU to minimize quiescent current between readings. Use Value: -55 °C to +150 °C operating range supports deployment in uncontrolled outdoor or factory-floor environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | RDS(on) = 0.035 Ω @ 4.5 V; higher 4.5-A ID; same SOT-23 package | Better conduction efficiency at higher currents; slightly higher gate charge (8.5 nC) | Select when lower RDS(on) and higher current headroom are prioritized over minimal gate drive energy |
| AO3400 | RDS(on) = 0.042 Ω @ 4.5 V; 5.7-A ID; requires 1.4-V VGS(th) min | Higher drive voltage requirement limits use with sub-2-V logic; larger thermal footprint | Choose only if system uses ≥2.5-V GPIO and needs higher current capability; verify layout compatibility |
Compared with DMN3025LSD-13 and AO3400, SI2316DS-T1-GE3 offers tighter VGS(th) distribution for low-voltage drive assurance and halogen-free compliance out-of-box, making it preferred for medical wearables and eco-certified consumer designs where both regulatory and electrical margins are critical.
Availability
SI2316DS-T1-GE3 is available at Aetrix Electronics and suitable for portable power banks, USB-C port protection circuits, wireless earbud battery management, and industrial sensor node load control requiring stable component supply across production lifecycles.
Supply support for SI2316DS-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The Si2316DS product line delivers compact, logic-level N-channel MOSFETs optimized for battery-powered load switching, emphasizing low RDS(on), tight VGS(th), and environmentally compliant packaging for portable and space-constrained applications.
FAQ
What is the maximum continuous drain current for SI2316DS-T1-GE3 at 70 °C ambient temperature?
The SI2316DS-T1-GE3 supports 2.3 A continuous drain current at TA = 70 °C under steady-state conditions on a 1" × 1" FR4 board. This derating reflects thermal limitations imposed by RthJA = 175 °C/W and the 150 °C maximum junction temperature. Designers must verify PCB copper area and airflow to sustain this current reliably in their specific layout.
Does SI2316DS-T1-GE3 support 3.3-V logic-level gate drive?
Yes, SI2316DS-T1-GE3 is fully compatible with 3.3-V logic-level gate drive: its VGS(th) is specified from 0.8 V (min) to 2.0 V (max), and RDS(on) is guaranteed at 0.085 Ω with VGS = 4.5 V and ID = 2.6 A. At 3.3 V, typical RDS(on) remains below 0.12 Ω, ensuring functional switching in most low-current load-switch applications.
What is the thermal resistance from junction to foot (RthJF) for SI2316DS-T1-GE3?
The SI2316DS-T1-GE3 has a maximum RthJF of 75 °C/W under steady-state conditions. This parameter quantifies thermal resistance from the silicon junction to the exposed drain pad (foot), enabling direct heat transfer to PCB copper. It is distinct from RthJA and critical for estimating die temperature when using thermal vias or copper pours beneath the drain pad.
Is SI2316DS-T1-GE3 suitable for reverse-current blocking in battery backup systems?
Yes, SI2316DS-T1-GE3 can provide reverse-current blocking when configured as a high-side switch with source tied to battery positive and drain to load. Its body diode is oriented anode-to-source, so reverse conduction is blocked unless externally biased. For true bidirectional blocking, two SI2316DS-T1-GE3 devices in series back-to-back are required - a common technique in battery protection ICs.
What marking code identifies SI2316DS-T1-GE3 on the device package?
The SI2316DS-T1-GE3 is marked on the top surface with the code "C6", as confirmed in the Vishay datasheet (Document Number: 71798, Rev. C). This 2-character marking appears adjacent to the Vishay logo and is consistent across all variants in the Si2316DS family, including the -T1-E3 and -T1-GE3 versions.
SI2316DS-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id:
- 800mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 215 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 700mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SI2316DS-T1-GE3 FAQ
1.How can I place an order for SI2316DS-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI2316DS-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI2316DS-T1-GE3 reliable?
The price and inventory of SI2316DS-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2316DS-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI2316DS-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2316DS-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI2316DS-T1-GE3?
SI2316DS-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI2316DS-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI2316DS-T1-GE3?
For technical support, including SI2316DS-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2316DS-T1-GE3 requirements.
6.How does Aetrix verify that SI2316DS-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI2316DS-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2316DS-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI2316DS-T1-GE3?
All SI2316DS-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2316DS-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI2316DS-T1-GE3 part is unused and in its original packaging.
Return procedure for SI2316DS-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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