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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI2337DS-T1-GE3

Name: SI2337DS-T1-GE3
Brand: Vishay Siliconix
SKU: SI2337DS-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI2337DS-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SI2337DS-T1-GE3.pdf

Description:: MOSFET P-CH 80V 2.2A SOT23-3

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Product details

Overview

SI2337DS-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in SOT-23 package, rated for -80 V drain-source voltage, 0.270 Ω R_DS(on) at V_GS = -10 V, and -2.2 A continuous drain current at T_C = 25 °C. It serves as a high-side load switch or reverse-polarity protection device in compact DC power rails.

For engineers reviewing the SI2337DS-T1-GE3 datasheet, SI2337DS-T1-GE3 pinout, SI2337DS-T1-GE3 application, or SI2337DS-T1-GE3 equivalent, key selection criteria include verified -80 V blocking capability, gate threshold voltage range (-2 to -4 V), thermal resistance (R_thJA ≤ 166 °C/W), body diode forward voltage (-0.8 to -1.2 V), and total gate charge (7–17 nC at V_GS = -6 V to -10 V).

Technical Context

This device uses Vishay's TrenchFET® process to achieve low on-resistance and fast switching with controlled Q_g and C_iss (500 pF typical). Its negative V_GS(th) enables simple gate drive from logic-level sources in high-side configurations where source is tied to positive rail.

The integrated body diode supports synchronous rectification or freewheeling in buck converters and reverse-current blocking in battery-powered systems. Avalanche-rated (E_AS = 6 mJ) and qualified for operation from -55 °C to +150 °C, it meets industrial reliability requirements without derating below 125 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-80 V - Supports input rails up to 80 V with margin for transients in industrial power supplies.
R_DS(on) max @ V_GS = -10 V	0.270 Ω - Limits conduction loss to <0.73 W at -1.2 A, enabling thermally constrained PCB layouts.
I_D continuous @ T_C = 25 °C	-2.2 A - Sustains full-load current in compact SOT-23 without external heatsink under case-cooled conditions.
Q_g typ. @ V_GS = -6 V	7 nC - Enables efficient 100 kHz–500 kHz switching with <1 Ω gate driver impedance.
V_GS(th)	-2 to -4 V - Ensures reliable turn-on with standard 3.3 V or 5 V microcontroller GPIOs in high-side configuration.
R_thJA max	166 °C/W - Defines worst-case thermal rise on 1" × 1" FR4 board; requires layout attention for >0.5 W dissipation.
V_SD @ I_S = 0.63 A	-0.8 to -1.2 V - Determines forward drop in reverse-battery protection or freewheeling paths.

Pinout & Package

SOT-23 (TO-236) surface-mount package, 3-pin, lead (Pb)-free and halogen-free per JEDEC J-STD-020. Dimensions: 2.80–3.04 mm × 2.10–2.64 mm × 0.89–1.12 mm height. Seating plane defined per Vishay drawing 71196.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Controls channel conduction; requires negative bias relative to source to turn on; sensitive to ESD (±20 V absolute max).
2 (S)	Source	Reference node for gate drive; connected to positive rail in high-side switch; carries full load current and body diode return path.
3 (D)	Drain	Switched output node; connects to load or ground; handles avalanche energy during inductive turn-off.

Key Features

Feature	Design Value
TrenchFET® technology	Delivers 0.216 Ω typical R_DS(on) in SOT-23, reducing conduction loss vs. planar MOSFETs of same size.
Avalanche-rated (E_AS = 6 mJ)	Withstands single-pulse inductive energy without failure-critical for relay/snubberless solenoid drivers.
Low Q_gd/Q_g ratio (≈29 %)	Minimizes Miller effect, improving noise immunity and enabling stable switching with moderate gate resistors.
Specified R_DS(on) at V_GS = -6 V	Guarantees performance with 3.3 V logic-level drive, eliminating need for level-shifting in many embedded systems.
Body diode t_rr = 30–45 ns	Enables use in synchronous rectifier topologies up to ~500 kHz without excessive switching loss.

Applications

Battery Reverse-Polarity Protection	High-Side Load Switch
Use Scenario: Prevents damage when Li-ion or lead-acid battery is inserted backward into portable medical or test equipment. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement with near-zero forward drop. Use Value: Eliminates 0.3–0.7 V diode drop, preserving 3–5 % system runtime and reducing heat generation in sealed enclosures.	Use Scenario: Enables/disables 12 V or 24 V subsystems (e.g., sensors, actuators) under MCU control in automotive body electronics. IC Role / Device Role / Timing Role: High-side power switch with logic-compatible gate drive and fast turn-on/turn-off (<30 ns). Use Value: Provides clean power sequencing, prevents backfeed between domains, and supports hot-swap compliance.
DC-DC Converter Synchronous Rectifier	Industrial Sensor Power Management
Use Scenario: Replaces Schottky diode in non-isolated buck converter for 5 V or 3.3 V output in PLC I/O modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating in continuous conduction mode with 100–300 kHz PWM. Use Value: Reduces rectifier loss by >40 % vs. 0.5 V Schottky, improving efficiency from 88 % to ≥91 % at 1 A load.	Use Scenario: Powers isolated analog sensor front-ends (e.g., 4–20 mA transmitters) requiring low quiescent current and transient robustness. IC Role / Device Role / Timing Role: Input protection and enable switch with -80 V rating and <1 μA IDSS leakage. Use Value: Blocks line surges up to ±60 V while adding <0.1 % gain error via R_DS(on) drift over temperature.

Battery Reverse-Polarity Protection

High-Side Load Switch

Use Scenario: Prevents damage when Li-ion or lead-acid battery is inserted backward into portable medical or test equipment.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement with near-zero forward drop.

Use Value: Eliminates 0.3–0.7 V diode drop, preserving 3–5 % system runtime and reducing heat generation in sealed enclosures.

Use Scenario: Enables/disables 12 V or 24 V subsystems (e.g., sensors, actuators) under MCU control in automotive body electronics.

IC Role / Device Role / Timing Role: High-side power switch with logic-compatible gate drive and fast turn-on/turn-off (<30 ns).

Use Value: Provides clean power sequencing, prevents backfeed between domains, and supports hot-swap compliance.

DC-DC Converter Synchronous Rectifier

Industrial Sensor Power Management

Use Scenario: Replaces Schottky diode in non-isolated buck converter for 5 V or 3.3 V output in PLC I/O modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating in continuous conduction mode with 100–300 kHz PWM.

Use Value: Reduces rectifier loss by >40 % vs. 0.5 V Schottky, improving efficiency from 88 % to ≥91 % at 1 A load.

Use Scenario: Powers isolated analog sensor front-ends (e.g., 4–20 mA transmitters) requiring low quiescent current and transient robustness.

IC Role / Device Role / Timing Role: Input protection and enable switch with -80 V rating and <1 μA IDSS leakage.

Use Value: Blocks line surges up to ±60 V while adding <0.1 % gain error via R_DS(on) drift over temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2053LW-7	R_DS(on) = 0.22 Ω @ -4.5 V; lower V_DS (-20 V); SOT-23 package.	Not suitable for >20 V rails; better for 3.3 V logic-driven low-voltage loads.	Select when supply voltage ≤5 V and gate drive is limited to 3.3 V.
IRLML6344TRPBF	R_DS(on) = 0.13 Ω @ -4.5 V; V_DS = -20 V; higher I_D (-4.3 A); same SOT-23.	Lacks -80 V rating; unsuitable for 24 V+ industrial inputs or surge-prone environments.	Choose only for cost-sensitive, low-voltage consumer applications where 20 V rating suffices.

Compared with DMN2053LW-7 and IRLML6344TRPBF, SI2337DS-T1-GE3 uniquely balances -80 V ruggedness, logic-level compatibility down to -6 V, and SOT-23 footprint-making it the only option among the three qualified for 24 V–48 V industrial power switching with minimal gate drive overhead.

Availability

SI2337DS-T1-GE3 is available at Aetrix Electronics and suitable for battery management systems, industrial sensor interfaces, DC-DC converter synchronous rectification, and high-side load switching requiring stable component supply across extended temperature ranges.

Supply support for SI2337DS-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si2337DS belongs to Vishay's TrenchFET® P-channel MOSFET family, engineered for high-voltage industrial and automotive power control where compact size, avalanche tolerance, and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current for SI2337DS-T1-GE3 at 70 °C case temperature?

The maximum continuous drain current for SI2337DS-T1-GE3 is -1.75 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures, and must be applied in designs where ambient or PCB heating raises the SOT-23 package temperature above 25 °C. SI2337DS-T1-GE3 maintains safe operation within its 150 °C junction limit under these conditions when used with appropriate copper area.

Does SI2337DS-T1-GE3 support gate drive from a 3.3 V microcontroller?

Yes, SI2337DS-T1-GE3 is fully compatible with 3.3 V logic-level gate drive. Its gate threshold voltage range of -2 V to -4 V ensures strong turn-on at V_GS = -3.3 V, and its R_DS(on) is guaranteed at V_GS = -6 V (0.303 Ω max), well within reach of buffered 3.3 V outputs. SI2337DS-T1-GE3 delivers predictable performance without requiring level shifters or charge pumps in most embedded applications.

What is the body diode forward voltage of SI2337DS-T1-GE3 at 0.63 A?

The body diode forward voltage (V_SD) of SI2337DS-T1-GE3 is specified as -0.8 V to -1.2 V at I_S = 0.63 A and T_J = 25 °C. This low forward drop enables efficient freewheeling in buck converters and reverse-current blocking in battery circuits. SI2337DS-T1-GE3 exhibits minimal temperature coefficient in this parameter, maintaining consistent behavior across its -55 °C to +150 °C operating range.

Can SI2337DS-T1-GE3 be used in avalanche mode repeatedly?

No, SI2337DS-T1-GE3 is rated for single-pulse avalanche only (E_AS = 6 mJ, I_AS = 11 A). Repetitive avalanche operation is not characterized or guaranteed, and repeated exposure may degrade reliability or cause parametric shift. SI2337DS-T1-GE3 should be used with snubbers, clamps, or layout techniques that prevent repetitive inductive energy dumping into the device. For repetitive avalanche applications, a dedicated avalanche-rated MOSFET is required.

What is the thermal resistance from junction to ambient for SI2337DS-T1-GE3 on a standard PCB?

The maximum junction-to-ambient thermal resistance (R_thJA) for SI2337DS-T1-GE3 is 166 °C/W when mounted on a 1" × 1" FR4 board with 1 oz copper, per the datasheet note. The typical value is 120 °C/W under the same conditions. SI2337DS-T1-GE3 requires careful thermal design: for example, at 0.76 W dissipation (its P_D rating at T_A = 25 °C), junction temperature rise could reach 126 °C-well within its 150 °C limit but demanding adequate copper pour.

SI2337DS-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 2.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 270mOhm @ 1.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 500 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 760mW (Ta), 2.5W (Tc)

Operating Temperature:: -50°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SI2337DS-T1-GE3 FAQ

1.How can I place an order for SI2337DS-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI2337DS-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI2337DS-T1-GE3 reliable?

The price and inventory of SI2337DS-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI2337DS-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI2337DS-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI2337DS-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI2337DS-T1-GE3?

SI2337DS-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI2337DS-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI2337DS-T1-GE3?

For technical support, including SI2337DS-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI2337DS-T1-GE3 requirements.

6.How does Aetrix verify that SI2337DS-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI2337DS-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI2337DS-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI2337DS-T1-GE3?

All SI2337DS-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI2337DS-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI2337DS-T1-GE3 part is unused and in its original packaging.

Return procedure for SI2337DS-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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