My Inquiry
My Account
Vishay Siliconix SI3407DV-T1-BE3
- Part No.:
- SI3407DV-T1-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3407DV-T1-BE3.pdf
- Description:
- MOSFET P-CH 20V 7.5A/8A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:906
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI3407DV-T1-BE3 from Vishay Siliconix is a P-channel -20 V, 8 A TrenchFET® power MOSFET in TSOP-6 package, optimized for PWM load switching with RDS(on) = 0.024 Ω at VGS = -4.5 V and Qg = 21 nC. It serves as a high-efficiency synchronous rectifier or notebook PC load switch operating up to 150 °C junction temperature.
For engineers reviewing the SI3407DV-T1-BE3 datasheet, SI3407DV-T1-BE3 pinout, SI3407DV-T1-BE3 application, or SI3407DV-T1-BE3 equivalent, key selection criteria include its -20 V VDS, low gate charge for fast switching, halogen-free RoHS-compliant construction, and validated UIS/avalanche robustness per JEDEC JESD24-1.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and high transconductance (gfs = 25 S), enabling efficient operation in high-frequency DC-DC converters and battery protection circuits. Its negative threshold voltage (-0.65 to -1.5 V) ensures reliable turn-on with standard logic-level gate drivers.
The device integrates a body diode with VSD = -0.8 to -1.2 V at IS = -6 A and trr = 37–56 ns, supporting bidirectional current flow in buck converter freewheeling paths and reverse-polarity protection schemes without external diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum drain-source blocking voltage for 3.3 V/5 V system rail protection |
| RDS(on) | 0.024 Ω @ VGS = -4.5 V - Enables ≤192 mW conduction loss at 8 A continuous load |
| ID (continuous) | -8 A @ TC = 25 °C - Supports high-current load switching on compact PCBs with minimal heatsinking |
| Qg | 21 nC @ VGS = -4.5 V - Reduces gate drive power and enables >1 MHz PWM operation |
| EAS | 3.2 mJ - Withstands single-pulse inductive energy in hot-swap and motor control transients |
| RthJA | 62.5 °C/W - Limits thermal rise to <100 °C ambient-to-junction delta under 2 W dissipation |
| VGS(th) | -0.65 to -1.5 V - Ensures full enhancement with standard -3.3 V/-5 V logic outputs |
Pinout & Package
TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm × 1.05 mm, with exposed drain pad for thermal performance. Pin 1–2–5–6 = Drain (D), Pin 3 = Gate (G), Pin 4 = Source (S).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | High-side switching node; electrically tied to exposed thermal pad for enhanced heat transfer |
| 3 | Gate (G) | Control input requiring -4.5 V to fully enhance; Rg = 1.3–13 Ω limits ringing |
| 4 | Source (S) | Reference node for gate drive; connects to system ground or floating return in high-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 25% lower RDS(on) vs. planar P-channel MOSFETs at same die size, reducing board area |
| PWM-optimized gate charge | Qg = 21 nC at -4.5 V enables <50 ns turn-off delay and <60 ns fall time in 500 kHz+ converters |
| 100% UIS tested | Guarantees ruggedness against unclamped inductive switching events in motor drivers and solenoid controls |
| Halogen-free & RoHS compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated industrial and computing applications |
Applications
| Notebook PC Load Switch | Battery Protection Circuit |
|---|---|
Use Scenario: Power gating of USB-C PD ports and display backlight rails during sleep mode. IC Role / Device Role / Timing Role: High-side P-channel switch controlled by system PMIC to disconnect non-critical loads. Use Value: 0.024 Ω RDS(on) minimizes voltage droop (<200 mV at 8 A), preserving rail stability during wake-up transitions. | Use Scenario: Reverse-current blocking between parallel Li-ion cells and main system bus. IC Role / Device Role / Timing Role: Bidirectional isolation element leveraging integrated body diode for charging path and MOSFET channel for discharge path. Use Value: VSD = -0.8 to -1.2 V and trr = 37–56 ns enable low-loss, fast-recovery operation without external Schottky diodes. |
| DC-DC Synchronous Rectifier | Hot-Swap Controller Back-End |
Use Scenario: Low-side synchronous rectification in 12 V → 3.3 V buck converters for embedded controllers. IC Role / Device Role / Timing Role: Active rectifier replacing flyback diode, driven by complementary PWM signal. Use Value: gfs = 25 S ensures rapid channel modulation, reducing conduction loss by >40% versus diode-based designs. | Use Scenario: Inrush limiting and fault isolation in 5 V/12 V server backplane slots. IC Role / Device Role / Timing Role: Current-limiting switch activated after soft-start, monitored via source-sense resistor. Use Value: EAS = 3.2 mJ withstands 25 A pulsed faults for ≥100 µs, preventing latch-up during connector mating transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si3401DV-T1-BE3 | RDS(on) = 0.035 Ω @ -4.5 V; lower ID rating (-5.3 A); identical TSOP-6 footprint | Lower current capacity suits sub-5 A portable devices; reduced thermal margin at full load | Select when board space is constrained and peak load current remains below 5 A. |
| DMN2011LFG-7 | RDS(on) = 0.022 Ω @ -4.5 V; higher Qg (32 nC); same -20 V rating and TSOP-6 package | Higher gate charge increases driver loss in >1 MHz designs; better conduction efficiency at light loads | Prefer for fixed-frequency converters where conduction loss dominates over switching loss. |
Compared with Si3401DV-T1-BE3 and DMN2011LFG-7, the SI3407DV-T1-BE3 delivers optimal balance of low RDS(on), moderate Qg, and proven UIS robustness-making it ideal for notebook load switches requiring both efficiency and transient resilience.
Availability
SI3407DV-T1-BE3 is available at Aetrix Electronics and suitable for notebook PC load switching, battery protection circuits, DC-DC synchronous rectification, and hot-swap controller back-end applications requiring stable component supply across production lifecycles.
Supply support for SI3407DV-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and thermal performance.
The SI3407DV-T1-BE3 belongs to Vishay's TrenchFET® P-channel portfolio, engineered for high-efficiency load switching in space-constrained computing and portable electronics where low gate charge and avalanche ruggedness are critical.
FAQ
What is the maximum continuous drain current for SI3407DV-T1-BE3 at 70 °C case temperature?
The SI3407DV-T1-BE3 supports -8 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes adequate PCB copper area for thermal conduction and reflects the device's derated capability under elevated thermal conditions without exceeding its 150 °C maximum junction temperature.
Does SI3407DV-T1-BE3 require a negative gate voltage to operate?
Yes, the SI3407DV-T1-BE3 is a P-channel MOSFET with a gate-threshold voltage range of -0.65 V to -1.5 V. It requires a gate voltage *lower* than the source (typically 0 V or ground) to turn on-e.g., -4.5 V relative to source-to achieve its specified RDS(on) of 0.024 Ω. Standard 3.3 V or 5 V logic cannot directly drive it without level-shifting circuitry.
Is SI3407DV-T1-BE3 halogen-free and RoHS compliant?
Yes, the SI3407DV-T1-BE3 is both halogen-free per IEC 61249-2-21 and compliant with RoHS Directive 2002/95/EC. The "BE3" suffix explicitly denotes lead-free and halogen-free construction, verified through material declarations and manufacturing process controls by Vishay Siliconix.
What is the thermal resistance from junction to ambient for SI3407DV-T1-BE3 on a standard FR4 board?
The SI3407DV-T1-BE3 has a maximum junction-to-ambient thermal resistance (RthJA) of 62.5 °C/W when mounted on a 1" × 1" FR4 board per test condition b in the datasheet. This value applies under natural convection and defines the worst-case thermal gradient for estimating junction temperature rise under given power dissipation.
Can SI3407DV-T1-BE3 be used in synchronous rectification topologies?
Yes, the SI3407DV-T1-BE3 is suitable for low-side synchronous rectification in buck converters due to its low RDS(on) (0.024 Ω), fast switching parameters (tf = 38–57 ns), and integrated body diode with trr = 37–56 ns. Its gate charge profile allows clean commutation when driven by complementary PWM signals synchronized to the high-side switch.
SI3407DV-T1-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.5A (Ta), 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 24mOhm @ 7.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 63 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1670 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta), 4.2W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3407DV-T1-BE3 FAQ
1.How can I place an order for SI3407DV-T1-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3407DV-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3407DV-T1-BE3 reliable?
The price and inventory of SI3407DV-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3407DV-T1-BE3 is usually 5 days.
3.What payment methods are accepted for SI3407DV-T1-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3407DV-T1-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3407DV-T1-BE3?
SI3407DV-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3407DV-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3407DV-T1-BE3?
For technical support, including SI3407DV-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3407DV-T1-BE3 requirements.
6.How does Aetrix verify that SI3407DV-T1-BE3 is sourced from the original manufacturer or authorized distributors?
All SI3407DV-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3407DV-T1-BE3 meets industry standards.
7.What is the process for return or replacement of SI3407DV-T1-BE3?
All SI3407DV-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3407DV-T1-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3407DV-T1-BE3 part is unused and in its original packaging.
Return procedure for SI3407DV-T1-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI3407DV-T1-BE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
