My Inquiry
My Account
Vishay Siliconix SI3447CDV-T1-E3
- Part No.:
- SI3447CDV-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3447CDV-T1-E3.pdf
- Description:
- MOSFET P-CH 12V 7.8A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,480
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI3447CDV-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for low-voltage load switching in space-constrained applications, featuring -12 V VDS, 0.036 Ω RDS(on) at -4.5 V VGS, -7.8 A continuous drain current at TC = 25 °C, and TSOP-6 surface-mount package optimized for thermal performance in portable power management circuits.
For engineers reviewing the SI3447CDV-T1-E3 datasheet, SI3447CDV-T1-E3 pinout, SI3447CDV-T1-E3 application, or SI3447CDV-T1-E3 equivalent, this part supports high-efficiency DC-DC converter synchronous rectification, battery protection circuitry, and compact load-switch designs requiring low gate charge (12 nC typical at -4.5 V) and robust body diode recovery (trr = 35–55 ns).
Technical Context
This device uses Vishay's TrenchFET® process to achieve low RDS(on) with fast switching characteristics: total gate charge is 12 nC (typ.) at -4.5 V drive, with turn-on delay of 20–30 ns and fall time of 20–30 ns under standard test conditions. Its -1.0 V typical gate threshold voltage enables reliable operation with 1.8 V and 2.5 V logic-level control signals.
The TSOP-6 package integrates four parallel drain terminals (pins 1, 2, 5, 6) for low-inductance, high-current conduction and thermal spreading, while the exposed drain pad provides a junction-to-foot thermal resistance of 34 °C/W (typ.), supporting stable operation up to 150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -12 V - Maximum drain-source blocking voltage compatible with 3.3 V and 5 V system rails. |
| RDS(on) @ VGS = -4.5 V | 0.036 Ω - Enables ≤ 1.4 W conduction loss at -6.3 A, critical for thermally constrained PCB layouts. |
| ID (continuous, TC = 25 °C) | -7.8 A - Sustained current capability with minimal derating when mounted on 1" × 1" FR4 board. |
| Qg (typ., VGS = -4.5 V) | 12 nC - Low gate drive energy reduces controller loading and improves PWM efficiency in high-frequency switching. |
| trr (body diode) | 35–55 ns - Fast reverse recovery minimizes shoot-through risk and switching losses in bidirectional current paths. |
| RthJF (typ.) | 34 °C/W - Junction-to-foot thermal resistance enables direct heat transfer to copper pour without external heatsink. |
| VGS(th) | -0.4 to -1.0 V - Guaranteed turn-on with 1.8 V logic, supporting ultra-low-voltage microcontroller GPIO drive. |
Pinout & Package
TSOP-6 package with exposed drain pad; dimensions: 3.05 mm × 2.85 mm × 1.0 mm (JEDEC MO-193C). Four pins (1, 2, 5, 6) are internally connected to drain; pin 3 is gate; pin 4 is source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Internally paralleled high-current path; serves as primary thermal conduction route to PCB copper pour. |
| 3 | Gate (G) | Control terminal requiring ≤ ±8 V rating; low input capacitance (Ciss = 910 pF) eases driver selection. |
| 4 | Source (S) | Reference node for gate drive; connects to system ground or negative rail in high-side switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Power MOSFET architecture | Delivers industry-leading RDS(on) × area ratio for TSOP-6, reducing board space vs. SO-8 alternatives. |
| PWM-optimized switching | Low Qgd/Qg ratio (3.4/12 nC) suppresses Miller-induced oscillation during hard switching. |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC; suitable for consumer and industrial end-equipment. |
| Robust body diode | VSD = -0.8 to -1.2 V at -5 A ensures low forward drop in reverse-current paths like battery back-up. |
Applications
| Portable Load Switch | Battery Protection Circuit |
|---|---|
Use Scenario: Controlled power delivery to USB peripherals or display backlight in smartphones and wearables. IC Role / Device Role / Timing Role: High-side load switch enabling rapid ON/OFF control with <30 ns turn-off delay. Use Value: 0.036 Ω RDS(on) limits voltage drop to <230 mV at 6.3 A, preserving battery runtime and minimizing self-heating. |
Use Scenario: Reverse-current blocking and over-discharge cutoff in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Back-to-back configured P-channel switch isolating cell from load during fault conditions. Use Value: -1.0 V VGS(th) allows direct interface with low-voltage battery monitor ICs (e.g., TI BQ297xx) without level-shifting. |
| DC-DC Synchronous Rectifier | RF Power Amplifier Switch |
Use Scenario: Secondary-side rectification in buck-derived point-of-load converters for FPGA or SoC core supplies. IC Role / Device Role / Timing Role: Low-loss synchronous rectifier replacing Schottky diode in 1–3 MHz switching regulators. Use Value: 12 nC Qg enables efficient gate drive from integrated controller outputs, reducing switching loss by >40% vs. discrete diode solution. |
Use Scenario: Transmit/receive antenna path switching in Bluetooth/Wi-Fi modules and cellular IoT transceivers. IC Role / Device Role / Timing Role: RF front-end switch controlling PA output routing and antenna diversity selection. Use Value: Low Coss (260 pF) and fast tf (15–25 ns at -8 V drive) minimize signal distortion and insertion loss below 2.5 GHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si3457DV-T1-E3 | Same TSOP-6 package; -20 V VDS, higher RDS(on) (0.055 Ω @ -4.5 V), lower ID (-5.3 A) | Better suited for 12 V input systems requiring higher breakdown margin; less optimal for 3.3 V logic-driven loads. | Select when system VIN exceeds 9 V and higher VDS margin is prioritized over conduction loss. |
| DMN2053LW-7 | Same -12 V rating; 0.042 Ω RDS(on) @ -4.5 V; SOT-26 package (smaller footprint, higher RthJA) | Limited thermal capacity (RthJA = 110 °C/W); unsuitable for sustained >3 A loads without aggressive layout. | Choose only for ultra-dense layouts where board area is more critical than thermal headroom or current capability. |
Compared with SI3447CDV-T1-E3, Si3457DV-T1-E3 trades conduction efficiency for higher voltage tolerance, while DMN2053LW-7 sacrifices thermal robustness for smaller size-neither offers pin-to-pin compatibility or identical electrical behavior.
Availability
SI3447CDV-T1-E3 is available at Aetrix Electronics and suitable for portable electronics load switching, battery protection circuits, DC-DC synchronous rectification, and RF power amplifier switching requiring stable component supply across production volumes.
Supply support for SI3447CDV-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-performance power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The SI3447CDV-T1-E3 belongs to Vishay's TrenchFET® Gen III P-channel MOSFET family, engineered for ultra-low RDS(on) and fast switching in battery-powered and space-constrained power management systems.
FAQ
What is the maximum continuous drain current rating for SI3447CDV-T1-E3 at 70 °C case temperature?
The SI3447CDV-T1-E3 supports -6.2 A continuous drain current at TC = 70 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOP-6 package under sustained power dissipation; actual usable current depends on PCB copper area and ambient conditions. The SI3447CDV-T1-E3 datasheet specifies this value explicitly for design margining in thermally demanding applications.
Does SI3447CDV-T1-E3 support 1.8 V logic-level gate drive?
Yes, SI3447CDV-T1-E3 has a gate threshold voltage range of -0.4 V to -1.0 V, ensuring reliable turn-on with 1.8 V logic signals. At VGS = -1.8 V, it delivers -5.6 A continuous current with RDS(on) = 0.068 Ω, making SI3447CDV-T1-E3 suitable for direct GPIO control from low-voltage microcontrollers without level-shifting circuitry.
What is the thermal resistance from junction to ambient for SI3447CDV-T1-E3 on a standard FR4 board?
The SI3447CDV-T1-E3 exhibits a maximum junction-to-ambient thermal resistance of 62.5 °C/W when mounted on a 1" × 1" FR4 board, per its Thermal Resistance Ratings table. This value assumes standard surface-mount reflow and no additional heatsinking; actual performance improves significantly with copper pour under drain pins, as validated in Vishay Application Note AN823.
Is SI3447CDV-T1-E3 halogen-free and RoHS-compliant?
Yes, SI3447CDV-T1-E3 is both halogen-free per IEC 61249-2-21 and compliant with RoHS Directive 2002/95/EC, as confirmed in the Features section of its official datasheet (Document Number: 69784, Rev. B). The "-E3" suffix denotes lead-free and halogen-free construction, making SI3447CDV-T1-E3 suitable for environmentally regulated consumer and industrial products.
What is the typical total gate charge of SI3447CDV-T1-E3 at -4.5 V gate drive?
The SI3447CDV-T1-E3 has a typical total gate charge (Qg) of 12 nC at VGS = -4.5 V, VDS = -6 V, and ID = -6.3 A, as specified in its Electrical Characteristics table. This low Qg value directly enables efficient high-frequency PWM operation and reduces gate driver power consumption, a key advantage of SI3447CDV-T1-E3 in compact power systems.
SI3447CDV-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V
- Rds On (Max) @ Id, Vgs:
- 36mOhm @ 6.3A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 910 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta), 3W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3447CDV-T1-E3 FAQ
1.How can I place an order for SI3447CDV-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3447CDV-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3447CDV-T1-E3 reliable?
The price and inventory of SI3447CDV-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3447CDV-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI3447CDV-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3447CDV-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3447CDV-T1-E3?
SI3447CDV-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3447CDV-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3447CDV-T1-E3?
For technical support, including SI3447CDV-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3447CDV-T1-E3 requirements.
6.How does Aetrix verify that SI3447CDV-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI3447CDV-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3447CDV-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI3447CDV-T1-E3?
All SI3447CDV-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3447CDV-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3447CDV-T1-E3 part is unused and in its original packaging.
Return procedure for SI3447CDV-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI3447CDV-T1-E3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
