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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3460BDV-T1-GE3

Name: SI3460BDV-T1-GE3
Brand: Vishay Siliconix
SKU: SI3460BDV-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3460BDV-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3460BDV-T1-GE3.pdf

Description:: MOSFET N-CH 20V 8A 6TSOP

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Product details

Overview

SI3460BDV-T1-GE3 from Vishay Siliconix is a lead-free and halogen-free N-channel 20-V TrenchFET® power MOSFET in TSOP-6 package, with R_DS(on) = 0.027 Ω at V_GS = 4.5 V, 8 A continuous drain current (T_J = 150 °C), 9 nC total gate charge, and optimized for low-voltage load switching in portable electronics.

For engineers reviewing the SI3460BDV-T1-GE3 datasheet, SI3460BDV-T1-GE3 pinout, SI3460BDV-T1-GE3 application, or SI3460BDV-T1-GE3 equivalent, key selection criteria include its 20-V V_DS, 0.027 Ω on-resistance at 4.5 V drive, TSOP-6 thermal performance (R_thJA = 62.5 °C/W max), body diode recovery time (t_rr = 20–40 ns), and RoHS/IEC 61249-2-21 compliance for space-constrained DC-DC and battery-switching designs.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low R_DS(on) at logic-level gate drive (1.8–4.5 V), enabling direct interface with 1.8-V, 2.5-V, and 3.3-V microcontrollers without level-shifting. Its TSOP-6 package features exposed drain pad for enhanced thermal conduction to PCB copper.

The device integrates a fast-recovery body diode (t_rr = 20–40 ns, Q_rr = 9–20 nC) and exhibits stable threshold voltage (V_GS(th) = 0.45–1.0 V) across -55 to 150 °C, supporting robust operation in battery-powered systems with wide temperature excursions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage for 3.3-V and 5-V rail switching
R_DS(on)	0.027 Ω @ V_GS = 4.5 V - Enables <140 mW conduction loss at 8 A
I_D (continuous)	8 A @ T_C = 25 °C - Package-limited current suitable for high-density PCB layouts
Q_g	9 nC @ V_GS = 4.5 V - Low gate charge supports efficient 1-MHz PWM switching
t_rr	20–40 ns - Fast body diode recovery reduces shoot-through risk in synchronous buck stages
R_thJA	62.5 °C/W max - Thermal resistance enables 2 W dissipation on standard FR4 with 1"×1" copper
V_GS(th)	0.45–1.0 V - Guaranteed turn-on with 1.8-V logic, eliminating external bias networks

Pinout & Package

TSOP-6 package (JEDEC MO-193C) with exposed drain pad for thermal management; 3.05 mm × 2.85 mm footprint, 1.1 mm max height, and gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (D)	Common high-current output node; internally connected to exposed thermal pad for PCB heat sinking
3	Source (S)	Power return path; referenced to ground in low-side switch configurations
4	Gate (G)	Control input requiring ≤9 nC charge for full enhancement; sensitive to ESD (±8 V rating)

Key Features

Feature	Design Value
TrenchFET® silicon process	Delivers 0.027 Ω R_DS(on) at 4.5 V while maintaining 20-V breakdown margin
Logic-level gate drive	Operates fully enhanced down to 1.8 V V_GS, enabling direct MCU GPIO control
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for eco-sensitive consumer applications
Fast body diode recovery	t_rr = 20–40 ns minimizes reverse recovery losses in discontinuous conduction mode
Exposed drain thermal pad	Reduces R_thJF to 30–36 °C/W, improving power handling on compact PCBs

Applications

Portable Load Switching	Low-Voltage Bus Switching
Use Scenario: Power gating of USB peripherals, SD card slots, or backlight LEDs in smartphones and tablets. IC Role / Device Role / Timing Role: Low-side load switch controlling 3.3-V or 5-V domain power delivery. Use Value: 0.027 Ω R_DS(on) limits voltage drop to <215 mV at 8 A, preserving system efficiency and battery runtime.	Use Scenario: Isolating auxiliary rails (e.g., 1.8-V I/O, 2.5-V memory) in multi-rail embedded systems. IC Role / Device Role / Timing Role: High-speed enable-controlled power path with <15 ns rise time. Use Value: 9 nC Q_g and 60 ns rise time support clean, jitter-free rail sequencing in FPGA and SoC power domains.
Battery Protection Circuits	DC-DC Synchronous Rectification
Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Back-to-back configured N-channel switch with integrated body diode. Use Value: V_GS(th) = 0.45–1.0 V ensures reliable turn-on during low-battery brownout (≥2.7 V).	Use Scenario: Secondary-side synchronous rectifier in 5-V/3.3-V buck converters for wearables and IoT sensors. IC Role / Device Role / Timing Role: Low-loss freewheeling path replacing Schottky diode. Use Value: t_rr = 20–40 ns and Q_rr = 9–20 nC reduce switching losses by >30% vs. discrete 40-V Schottky alternatives.

Portable Load Switching

Low-Voltage Bus Switching

Use Scenario: Power gating of USB peripherals, SD card slots, or backlight LEDs in smartphones and tablets.

IC Role / Device Role / Timing Role: Low-side load switch controlling 3.3-V or 5-V domain power delivery.

Use Value: 0.027 Ω R_DS(on) limits voltage drop to <215 mV at 8 A, preserving system efficiency and battery runtime.

Use Scenario: Isolating auxiliary rails (e.g., 1.8-V I/O, 2.5-V memory) in multi-rail embedded systems.

IC Role / Device Role / Timing Role: High-speed enable-controlled power path with <15 ns rise time.

Use Value: 9 nC Q_g and 60 ns rise time support clean, jitter-free rail sequencing in FPGA and SoC power domains.

Battery Protection Circuits

DC-DC Synchronous Rectification

Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel switch with integrated body diode.

Use Value: V_GS(th) = 0.45–1.0 V ensures reliable turn-on during low-battery brownout (≥2.7 V).

Use Scenario: Secondary-side synchronous rectifier in 5-V/3.3-V buck converters for wearables and IoT sensors.

IC Role / Device Role / Timing Role: Low-loss freewheeling path replacing Schottky diode.

Use Value: t_rr = 20–40 ns and Q_rr = 9–20 nC reduce switching losses by >30% vs. discrete 40-V Schottky alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2020LSD-13	R_DS(on) = 0.022 Ω @ 4.5 V, but 20-V V_DS and TSOP-6 package identical	Slightly lower conduction loss; same footprint and drive requirements	Preferred where <5% R_DS(on) reduction justifies sourcing from Diodes Inc.
AO3400	R_DS(on) = 0.028 Ω @ 4.5 V, 30-V V_DS, same TSOP-6 package and 1.8-V logic compatibility	Higher voltage margin allows reuse in 12-V intermediate bus designs	Select when future-proofing against higher input voltage requirements without layout change.

Compared with SI3460BDV-T1-GE3, DMN2020LSD-13 offers marginally better conduction efficiency in identical 20-V systems, while AO3400 trades 0.001 Ω higher R_DS(on) for +10 V V_DS headroom-enabling one-footprint scalability across 5-V to 12-V load-switch applications.

Availability

SI3460BDV-T1-GE3 is available at Aetrix Electronics and suitable for portable load switching, low-voltage bus isolation, battery protection circuits, and DC-DC synchronous rectification requiring stable component supply and halogen-free compliance.

Supply support for SI3460BDV-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-efficiency, high-reliability silicon solutions.

The Si3460BDV product line targets space-constrained, battery-operated systems requiring logic-level drive, low R_DS(on), and environmentally compliant packaging-designed specifically for portable and wearable power management.

FAQ

What is the maximum continuous drain current for SI3460BDV-T1-GE3 at 70 °C case temperature?

The maximum continuous drain current for SI3460BDV-T1-GE3 is 7.1 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOP-6 package under sustained power dissipation; actual usable current depends on PCB copper area and ambient conditions. SI3460BDV-T1-GE3 maintains this rating while delivering 0.027 Ω R_DS(on) at 4.5 V gate drive.

Does SI3460BDV-T1-GE3 support 1.8-V logic-level gate drive?

Yes, SI3460BDV-T1-GE3 is fully characterized for 1.8-V operation: R_DS(on) = 0.040 Ω at V_GS = 1.8 V and I_D = 2.5 A, with guaranteed V_GS(th) as low as 0.45 V. This enables direct interface with 1.8-V microcontrollers and FPGAs without gate-driving circuitry. SI3460BDV-T1-GE3 maintains stable switching performance across -55 to 150 °C junction temperature.

What is the thermal resistance from junction to ambient for SI3460BDV-T1-GE3?

The maximum junction-to-ambient thermal resistance (R_thJA) for SI3460BDV-T1-GE3 is 62.5 °C/W under standard test conditions (surface-mounted on 1" × 1" FR4 board). This value supports up to ~2 W continuous power dissipation at 25 °C ambient. SI3460BDV-T1-GE3 also specifies R_thJF = 30–36 °C/W to the exposed drain foot, enabling enhanced cooling via PCB copper pours.

Is SI3460BDV-T1-GE3 suitable for synchronous rectification in buck converters?

Yes, SI3460BDV-T1-GE3 is suitable for synchronous rectification due to its fast body diode (t_rr = 20–40 ns, Q_rr = 9–20 nC) and low R_DS(on) (0.027 Ω @ 4.5 V). These parameters reduce reverse recovery losses and conduction losses compared to Schottky diodes in 3.3-V/5-V buck outputs. SI3460BDV-T1-GE3 operates reliably in hard-switched and CCM/DCM modes up to 1 MHz.

What marking code identifies SI3460BDV-T1-GE3 on the package?

The marking code for SI3460BDV-T1-GE3 is "AF" followed by a three-character lot traceability code (e.g., AF XXX), as confirmed in the Product Summary section of Vishay document 74412. This marking appears on the top surface of the TSOP-6 package and aligns with Vishay's standard coding for halogen-free, lead-free variants. SI3460BDV-T1-GE3 shares the "AF" prefix with other devices in the Si3460B family.

SI3460BDV-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 27mOhm @ 5.1A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 860 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 3.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3460BDV-T1-GE3 FAQ

1.How can I place an order for SI3460BDV-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3460BDV-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3460BDV-T1-GE3 reliable?

The price and inventory of SI3460BDV-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3460BDV-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI3460BDV-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3460BDV-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3460BDV-T1-GE3?

SI3460BDV-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3460BDV-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3460BDV-T1-GE3?

For technical support, including SI3460BDV-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3460BDV-T1-GE3 requirements.

6.How does Aetrix verify that SI3460BDV-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI3460BDV-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3460BDV-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI3460BDV-T1-GE3?

All SI3460BDV-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3460BDV-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3460BDV-T1-GE3 part is unused and in its original packaging.

Return procedure for SI3460BDV-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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