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Vishay Siliconix SI3473CDV-T1-BE3
- Part No.:
- SI3473CDV-T1-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3473CDV-T1-BE3.pdf
- Description:
- P-CHANNEL 12-V (D-S) MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:5,980
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Product details
Overview
SI3473CDV-T1-BE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in TSOP-6 package, rated for -12 V drain-source voltage, 0.022 Ω RDS(on) at VGS = -4.5 V, -8 A continuous drain current, and optimized for PWM load switching in portable power management circuits.
For engineers reviewing the SI3473CDV-T1-BE3 datasheet, SI3473CDV-T1-BE3 pinout, SI3473CDV-T1-BE3 application, or SI3473CDV-T1-BE3 equivalent, key selection criteria include low gate charge (26 nC typ. at VGS = -4.5 V), robust body diode recovery (trr = 50–75 ns), thermal resistance (RthJA = 62.5 °C/W max), and compatibility with 1.8 V logic-level drive.
Technical Context
This device uses TrenchFET® technology to achieve low on-resistance and fast switching with minimal gate drive requirements. Its negative threshold voltage (-0.4 to -1.0 V) enables reliable turn-on with standard logic-level signals down to 1.8 V.
The TSOP-6 package provides high power density with drain-connected pins (1, 2, 5, 6) for efficient heat spreading, while the integrated source-drain body diode supports synchronous rectification and reverse-current protection in DC-DC converters and battery protection circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -12 V - Maximum blocking voltage for low-voltage rail switching (e.g., 3.3 V, 5 V systems) |
| RDS(on) @ VGS = -4.5 V | 0.022 Ω - Enables <170 mW conduction loss at 8 A, critical for thermally constrained PCBs |
| Qg typ. | 26 nC - Reduces gate drive power and switching transition time in high-frequency PWM |
| ID continuous | -8 A - Supports sustained load currents in compact power switches without forced cooling |
| trr (body diode) | 50–75 ns - Limits reverse-recovery losses during hard-switched transitions in buck converters |
| RthJA max. | 62.5 °C/W - Defines maximum ambient temperature rise under 2 W dissipation on standard FR4 |
| VGS(th) | -0.4 to -1.0 V - Ensures full enhancement with 1.8 V logic outputs, eliminating level-shifter need |
Pinout & Package
TSOP-6 surface-mount package with exposed drain paddle for thermal performance; dimensions per JEDEC MO-193C (3.05 mm × 2.85 mm × 1.00 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Common high-current output node; all four pins internally tied to drain and thermal pad for low-inductance, low-Rth path |
| 3 | Gate (G) | Control input requiring ≤±100 nA leakage; driven directly by 1.8–4.5 V logic |
| 4 | Source (S) | Return path for load current; referenced to system ground or floating rail in high-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers industry-leading RDS(on) × Qg figure-of-merit for efficient switching at 500 kHz–1 MHz |
| PWM-optimized gate charge | 26 nC total gate charge at -4.5 V enables clean, low-loss transitions with minimal driver stress |
| Low VGS(th) range | -0.4 to -1.0 V ensures guaranteed turn-on with 1.8 V microcontroller I/O, reducing BOM count |
| Robust body diode | 50–75 ns reverse recovery time and 30–45 nC Qrr support synchronous operation in buck regulators |
| Thermally enhanced TSOP-6 | Drain-connected pins and low RthJF (30 °C/W max) enable >2 W dissipation on 1" × 1" FR4 without heatsink |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: High-side load switch controlling battery-to-system power path with fast fault response. Use Value: Low RDS(on) minimizes voltage drop across protection FET, preserving runtime; body diode prevents backfeed during hot-plug events. | Use Scenario: Enabling/disabling 5 V/9 V/15 V/20 V rails in USB-C PD sink applications. IC Role / Device Role / Timing Role: Logic-controlled power path switch responding to PD controller GPIO signals. Use Value: 1.8 V-compatible VGS(th) allows direct interface with PD controller I/O; low Qg supports rapid on/off cycling during voltage negotiation. |
| DC-DC Synchronous Rectifier | Portable Display Backlight Control |
Use Scenario: Replacing Schottky diode in buck converter output stage for improved efficiency. IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by controller's complementary PWM signal. Use Value: Fast trr and low Qrr reduce switching losses; RDS(on) < 0.022 Ω cuts conduction loss vs. 0.3 V diode drop at 3 A. | Use Scenario: Dimmable LED current regulation in smartphone/tablet displays using PWM dimming. IC Role / Device Role / Timing Role: High-side current sink switch modulated at 1–20 kHz to control LED string brightness. Use Value: Low gate charge enables crisp PWM edges without overshoot; TSOP-6 footprint fits tight display module layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si3472CDV-T1-BE3 | RDS(on) = 0.032 Ω @ -4.5 V; higher on-resistance, same package and pinout | Suitable where marginally higher conduction loss is acceptable for cost optimization | Select when thermal budget allows ~45% higher I²R loss at 8 A; identical layout and drive requirements |
| DMN2020LFG-7 | RDS(on) = 0.025 Ω @ -4.5 V; slightly higher Qg (32 nC); same TSOP-6 footprint | Offers tighter RDS(on) tolerance but requires verification of body diode Qrr in synchronous designs | Prefer for new designs needing marginally lower on-resistance; confirm trr = 65 ns meets converter timing constraints |
Compared with SI3473CDV-T1-BE3, Si3472CDV-T1-BE3 trades 45% higher conduction loss for potential cost savings, while DMN2020LFG-7 offers marginally better RDS(on) but with higher gate drive energy and unverified body diode recovery in high-frequency sync rectification.
Availability
SI3473CDV-T1-BE3 is available at Aetrix Electronics and suitable for battery protection, USB-C power delivery, DC-DC synchronous rectification, and portable display backlight control requiring stable component supply and lead-free/halogen-free compliance.
Supply support for SI3473CDV-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high reliability and thermal performance.
The Si347x family targets low-voltage, high-efficiency load switching in space-constrained portable electronics, designed specifically for 1.8–4.5 V logic compatibility and minimal PCB real estate usage.
FAQ
What is the maximum continuous drain current rating for SI3473CDV-T1-BE3 at 70 °C case temperature?
The SI3473CDV-T1-BE3 supports -8 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating from the 150 °C junction limit and accounts for thermal resistance to case (RthJC). At higher ambient temperatures or with limited airflow, design margin should be applied per the Current Derating curve on page 5 of the datasheet.
Does SI3473CDV-T1-BE3 support 1.8 V logic-level gate drive?
Yes, SI3473CDV-T1-BE3 supports 1.8 V logic-level gate drive due to its guaranteed VGS(th) range of -0.4 V to -1.0 V. At VGS = -1.8 V, RDS(on) is 0.036 Ω (max), enabling usable on-state performance without external level shifting. This makes SI3473CDV-T1-BE3 suitable for direct interface with modern low-voltage microcontrollers and PMICs.
What is the thermal resistance from junction to ambient for SI3473CDV-T1-BE3 on a standard FR4 board?
The maximum junction-to-ambient thermal resistance (RthJA) for SI3473CDV-T1-BE3 is 62.5 °C/W under standard test conditions (surface-mounted on 1" × 1" FR4, t ≤ 5 s). For steady-state operation, the typical value is 55 °C/W. These values assume no additional copper pour or heatsinking; adding thermal vias and copper area reduces effective RthJA significantly.
Can SI3473CDV-T1-BE3 be used as a synchronous rectifier in a buck converter?
Yes, SI3473CDV-T1-BE3 is suitable as a synchronous rectifier in buck converters due to its fast body diode recovery (trr = 50–75 ns) and low Qrr (30–45 nC), which minimize reverse-recovery losses. Its low RDS(on) (0.022 Ω typ. at -4.5 V) further reduces conduction loss versus Schottky diodes. Gate drive must be timed to avoid shoot-through, and dead-time control is essential.
What is the total gate charge specification for SI3473CDV-T1-BE3 at VGS = -4.5 V?
The total gate charge (Qg) for SI3473CDV-T1-BE3 is 26 nC (typical) and 40 nC (maximum) at VGS = -4.5 V, VDS = -6 V, and ID = -8.1 A. This value determines gate driver sizing and switching speed-lower Qg enables faster transitions and reduced driver power dissipation, making SI3473CDV-T1-BE3 well-suited for high-frequency PWM applications.
SI3473CDV-T1-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Ta), 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 8.1A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 65 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2010 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta), 4.2W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3473CDV-T1-BE3 FAQ
1.How can I place an order for SI3473CDV-T1-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3473CDV-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3473CDV-T1-BE3 reliable?
The price and inventory of SI3473CDV-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3473CDV-T1-BE3 is usually 5 days.
3.What payment methods are accepted for SI3473CDV-T1-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3473CDV-T1-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3473CDV-T1-BE3?
SI3473CDV-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3473CDV-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3473CDV-T1-BE3?
For technical support, including SI3473CDV-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3473CDV-T1-BE3 requirements.
6.How does Aetrix verify that SI3473CDV-T1-BE3 is sourced from the original manufacturer or authorized distributors?
All SI3473CDV-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3473CDV-T1-BE3 meets industry standards.
7.What is the process for return or replacement of SI3473CDV-T1-BE3?
All SI3473CDV-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3473CDV-T1-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3473CDV-T1-BE3 part is unused and in its original packaging.
Return procedure for SI3473CDV-T1-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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