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Vishay Siliconix SI3499DV-T1-BE3
- Part No.:
- SI3499DV-T1-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SI3499DV-T1-BE3.pdf
- Description:
- P-CHANNEL 1.5-V (G-S) MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:270
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Product details
Overview
SI3499DV-T1-BE3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET rated for -8 V drain-source voltage, 0.023 Ω RDS(on) at VGS = -4.5 V, and -7 A continuous drain current at TA = 25 °C, designed as a low-voltage load switch in portable power management circuits.
For engineers reviewing the SI3499DV-T1-BE3 datasheet, SI3499DV-T1-BE3 pinout, SI3499DV-T1-BE3 application, or SI3499DV-T1-BE3 equivalent, key selection criteria include its 1.5 V gate threshold compatibility with low-power microcontrollers, ultra-low on-resistance at 1.5–4.5 V drive, TSOP-6 footprint constraints, and integrated body diode for reverse-current blocking in battery-powered systems.
Technical Context
This device operates as a single P-channel enhancement-mode MOSFET with a guaranteed gate threshold voltage range of -0.35 V to -0.75 V (VDS = VGS, ID = -250 µA), enabling reliable turn-on from 1.5 V logic. Its trench-based silicon structure delivers stable RDS(on) across temperature and gate voltage variations.
The TSOP-6 package provides a thermally enhanced drain-connected foot, achieving RthJF = 25 °C/W (typical) for efficient heat transfer to PCB copper. All units undergo 100 % gate resistance (Rg) testing to ensure consistent switching behavior in high-frequency load-switching applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -8 V - Maximum allowable drain-to-source voltage before breakdown; defines safe operating range in negative-rail switching. |
| RDS(on) | 0.023 Ω at VGS = -4.5 V - Enables <165 mW conduction loss at 7 A, critical for thermal budget in compact portable designs. |
| ID (cont) | -7 A at TA = 25 °C - Supports high-current load switching without external heatsinking on standard FR4 boards. |
| VGS(th) | -0.35 to -0.75 V - Ensures full enhancement with 1.5 V–1.8 V GPIOs, eliminating need for level-shifting circuitry. |
| Qg | 28–42 nC - Low total gate charge enables fast switching (td(on) = 27 ns, tf = 110 ns) with minimal driver strength requirements. |
| PD | 2 W at TA = 25 °C - Sufficient power dissipation headroom for pulsed or intermittent load control in handheld devices. |
Pinout & Package
TSOP-6 surface-mount package (JEDEC MO-193C), 3.05 mm × 2.85 mm × 1.05 mm, with exposed drain pad for thermal conduction to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain (D) | Common high-side connection point; electrically and thermally tied to exposed pad for low-inductance, low-resistance current path. |
| 3 | Gate (G) | Control input requiring negative VGS; low Ciss and Rg enable direct MCU GPIO drive without buffer. |
| 4 | Source (S) | Reference node for gate drive; connects to system VBAT or regulated rail; body diode anode. |
Key Features
| Feature | Design Value |
|---|---|
| 1.5 V Gate-Rated TrenchFET® | Guaranteed operation down to 1.5 V VGS, enabling direct interface with ultra-low-voltage MCUs and PMICs. |
| Ultra-Low RDS(on) | 0.023 Ω @ -4.5 V ensures <120 mW I²R loss at 6.5 A, reducing thermal stress in space-constrained battery packs. |
| 100 % Rg Tested | Ensures gate drive timing consistency across production lots, critical for predictable turn-on/turn-off in sequencing circuits. |
| Halogen-Free & RoHS Compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC, supporting environmental compliance in global consumer electronics. |
Applications
| Smartphone Power Sequencing | USB-C Port Power Switching |
|---|---|
Use Scenario: Controlled enable/disable of camera module, display backlight, or RF front-end during sleep/wake transitions. IC Role / Device Role / Timing Role: High-side load switch isolating subsystems from main battery rail with minimal quiescent current (<1 µA IDSS). Use Value: Prevents leakage-induced battery drain while maintaining fast response (<40 ns rise time) for real-time power state changes. | Use Scenario: Enabling/disabling VBUS path in USB-C receptacles to support dual-role power delivery negotiation. IC Role / Device Role / Timing Role: Bidirectional current-blocking switch with integrated body diode, supporting source/sink mode handshaking. Use Value: Eliminates need for external diode; RDS(on) < 0.03 Ω at 1.8 V gate drive meets USB PD 3.0 low-loss requirements. |
| Wireless Earbud Charging Case | Medical Wearable Battery Protection |
Use Scenario: Isolating Li-ion cell from charging circuitry when fully charged to prevent overcharge and thermal runaway. IC Role / Device Role / Timing Role: Reverse-current blocking switch placed between charger IC output and battery terminal. Use Value: Body diode forward voltage (-0.63 V typ.) limits reverse leakage; low RDS(on) minimizes voltage drop during active charging. | Use Scenario: Disconnecting sensor modules during standby to meet ISO 13485 low-power validation requirements. IC Role / Device Role / Timing Role: Fail-safe power gate controlled by medical-grade watchdog timer or safety MCU. Use Value: Guaranteed -0.75 V max VGS(th) ensures robust turn-on even under worst-case voltage droop and temperature drift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si3483DV-T1-BE3 | RDS(on) = 0.032 Ω @ -4.5 V; higher threshold (-0.4 to -1.0 V); same TSOP-6 package. | Slightly lower current rating (-5.3 A); better suited for lower-power wearables where gate drive margin is less constrained. | Select when tighter VGS(th) distribution is needed or when slightly higher RDS(on) is acceptable for cost optimization. |
| DMN3023LSD-13 | RDS(on) = 0.025 Ω @ -4.5 V; dual P-channel; SO-8 package; higher thermal resistance (RthJA = 110 °C/W). | Requires larger PCB area; dual configuration supports redundant or complementary switching but adds complexity. | Choose only if dual-channel functionality or SO-8 legacy compatibility is required; not a drop-in replacement due to package and pinout mismatch. |
Compared with Si3483DV-T1-BE3 and DMN3023LSD-13, the SI3499DV-T1-BE3 offers the lowest RDS(on) in TSOP-6, optimal for space-constrained 1.5–1.8 V logic-driven load switching where thermal performance and gate drive simplicity are prioritized.
Availability
SI3499DV-T1-BE3 is available at Aetrix Electronics and suitable for smartphone power sequencing, USB-C port switching, and medical wearable battery protection requiring stable component supply and long-term lifecycle support.
Supply support for SI3499DV-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The Si3499DV belongs to Vishay's TrenchFET® Gen III P-channel portfolio, engineered specifically for ultra-low-voltage load switching in battery-powered consumer and portable medical electronics.
FAQ
What is the maximum continuous drain current for SI3499DV-T1-BE3 at 85 °C ambient temperature?
The SI3499DV-T1-BE3 supports -3.6 A continuous drain current at TA = 85 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOP-6 package on standard FR4; actual capability may improve with enhanced PCB copper pour or forced airflow. The SI3499DV-T1-BE3 maintains RDS(on) stability up to 150 °C junction temperature.
Does SI3499DV-T1-BE3 have a guaranteed gate threshold voltage range?
Yes, the SI3499DV-T1-BE3 has a guaranteed VGS(th) range of -0.35 V to -0.75 V (tested at VDS = VGS, ID = -250 µA). This tight specification ensures reliable turn-on with 1.5 V–1.8 V logic outputs without external biasing. The SI3499DV-T1-BE3 also exhibits minimal threshold drift over temperature, supporting robust operation from -55 °C to 150 °C.
Can SI3499DV-T1-BE3 be used in reverse-polarity protection circuits?
Yes, the SI3499DV-T1-BE3 is suitable for reverse-polarity protection due to its P-channel topology and integrated body diode. When placed in the high-side position with source tied to input and drain to load, it blocks reverse current flow while conducting forward current with low loss. The SI3499DV-T1-BE3's -8 V VDS rating supports common 5 V and 3.3 V input rails with margin.
Is SI3499DV-T1-BE3 halogen-free and RoHS compliant?
Yes, the SI3499DV-T1-BE3 is both halogen-free per IEC 61249-2-21 and RoHS compliant per Directive 2002/95/EC. The "-BE3" suffix explicitly denotes lead-free and halogen-free construction. This compliance is verified through material declarations and third-party testing, making the SI3499DV-T1-BE3 suitable for global consumer electronics markets including EU and China RoHS.
What is the thermal resistance from junction to foot (RthJF) for SI3499DV-T1-BE3?
The SI3499DV-T1-BE3 has a typical junction-to-foot thermal resistance (RthJF) of 25 °C/W under steady-state conditions, with a maximum of 30 °C/W. This parameter reflects heat transfer efficiency from the die directly to the exposed drain pad, which must be soldered to a large PCB copper area for optimal performance. The SI3499DV-T1-BE3's low RthJF enables higher power handling than comparable TSOP-6 MOSFETs without additional thermal vias.
SI3499DV-T1-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 8 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 23mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 750mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 42 nC @ 4.5 V
- Vgs (Max):
- ±5V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SI3499DV-T1-BE3 FAQ
1.How can I place an order for SI3499DV-T1-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI3499DV-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI3499DV-T1-BE3 reliable?
The price and inventory of SI3499DV-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3499DV-T1-BE3 is usually 5 days.
3.What payment methods are accepted for SI3499DV-T1-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3499DV-T1-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI3499DV-T1-BE3?
SI3499DV-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI3499DV-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI3499DV-T1-BE3?
For technical support, including SI3499DV-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3499DV-T1-BE3 requirements.
6.How does Aetrix verify that SI3499DV-T1-BE3 is sourced from the original manufacturer or authorized distributors?
All SI3499DV-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3499DV-T1-BE3 meets industry standards.
7.What is the process for return or replacement of SI3499DV-T1-BE3?
All SI3499DV-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3499DV-T1-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI3499DV-T1-BE3 part is unused and in its original packaging.
Return procedure for SI3499DV-T1-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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