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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI3805DV-T1-GE3

Name: SI3805DV-T1-GE3
Brand: Vishay Siliconix
SKU: SI3805DV-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI3805DV-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: SI3805DV-T1-GE3.pdf

Description:: MOSFET P-CH 20V 3.3A 6TSOP

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Product details

Overview

SI3805DV-T1-GE3 from Vishay Siliconix is a P-channel 20-V Schottky Power MOSFET in TSOP-6 package, integrating a co-packaged Schottky diode. It delivers R_DS(on) = 0.084 Ω at V_GS = −10 V, supports −3.3 A continuous drain current (T_C = 25 °C), and features 4 nC total gate charge - optimized for high-efficiency DC-DC converters in HDD power stages.

For engineers reviewing the SI3805DV-T1-GE3 datasheet, SI3805DV-T1-GE3 pinout, SI3805DV-T1-GE3 application, or SI3805DV-T1-GE3 equivalent, key selection criteria include its integrated Schottky diode forward voltage (0.5 V @ 1 A), −20 V drain-source breakdown rating, thermal resistance R_thJA = 93 °C/W (t ≤ 5 s), and halogen-free/RoHS-compliant construction.

Technical Context

This device combines a logic-level P-channel MOSFET and a monolithic Schottky diode in a single TSOP-6 package. Its gate threshold voltage (V_GS(th) = −0.6 to −1.5 V) enables direct drive from 3.3 V or 5 V controllers, while the integrated diode eliminates external body diode recovery losses (t_rr = 23–35 ns) and reduces reverse recovery charge (Q_rr = 14–21 nC).

The MOSFET exhibits low dynamic capacitance (C_iss = 330 pF, C_oss = 80 pF) and fast switching (t_d(on) = 3–27 ns depending on V_GS), supporting high-frequency operation up to 1 MHz. Its junction-to-foot thermal resistance (R_thJF = 75 °C/W steady-state) facilitates efficient heat transfer through drain-connected pins 1, 2, 5, and 6.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V: Maximum blocking voltage for low-voltage synchronous rectification or load switching.
R_DS(on)	0.084 Ω @ V_GS = −10 V: Enables <100 mW conduction loss at −3 A, critical for thermally constrained HDD PCBs.
I_D (cont.)	−3.3 A @ T_C = 25 °C: Sustains peak currents in compact DC-DC output stages without forced cooling.
Q_g	4 nC @ V_GS = −4.5 V: Minimizes gate drive power and enables efficient operation with low-current controllers.
V_F (Schottky)	0.5 V @ 1 A: Reduces forward conduction loss vs. MOSFET body diode (V_SD = −0.75 to −1.2 V), improving light-load efficiency.
R_thJA	93 °C/W (t ≤ 5 s): Defines transient thermal limits for pulsed operation in burst-mode converters.
V_KA	20 V: Schottky reverse voltage rating matches MOSFET V_DS, enabling shared layout and stress margin.

Pinout & Package

TSOP-6 package (JEDEC MO-193C) with exposed drain paddle; pins 1, 2, 5, and 6 are internally connected to the drain and serve as primary thermal and electrical paths. Pin 3 is source, pin 4 is gate, and pin 6 is also drain (confirmed top-view marking and Vishay AN823).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Drain (MOSFET) / Cathode (Schottky)	Common high-current, high-thermal-conductivity node; requires copper plane for heat spreading per AN823.
3	Source (MOSFET) / Anode (Schottky)	Return path for both MOSFET channel and Schottky current; connects to ground or low-side rail.
4	Gate	Logic-level control input; accepts −4.5 V to −10 V drive; low Q_g enables fast turn-on with minimal driver strength.

Key Features

Feature	Design Value
Integrated Schottky Diode	Eliminates external diode, reduces board area by >30%, and removes body diode reverse recovery losses in buck converter freewheeling paths.
LITTLE FOOT® Plus Construction	Optimized leadframe and die attach enhance thermal transfer from junction to PCB via drain pins, achieving R_thJF = 75 °C/W.
Halogen-Free & RoHS-Compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC, supporting environmentally regulated HDD and industrial storage designs.
Low Gate Charge (4 nC)	Reduces gate driver power dissipation and EMI during switching, enabling use with low-power microcontrollers or PWM ICs.
−20 V V_DS Rating	Provides 2× safety margin over typical 12 V or 19 V HDD supply rails, ensuring robustness against voltage transients.

Applications

HDD DC-DC Converter	Portable SSD Power Management
Use Scenario: Step-down conversion from 12 V or 19 V battery/supply to 5 V or 3.3 V for HDD spindle motor and controller ICs. IC Role / Device Role / Timing Role: Synchronous rectifier switch and integrated freewheeling diode in buck converter secondary side. Use Value: Schottky V_F = 0.5 V cuts conduction loss by ~40% vs. MOSFET body diode, directly improving light-load efficiency critical for HDD idle modes.	Use Scenario: Compact, high-density power stage in M.2 or 2.5″ SSDs where board space and thermal headroom are severely limited. IC Role / Device Role / Timing Role: Low-R_DS(on) P-channel switch controlling 3.3 V or 5 V VCC rail with integrated diode for reverse polarity protection and inrush limiting. Use Value: TSOP-6 footprint and R_thJA = 93 °C/W allow full −3.3 A rating on 1″ × 1″ FR4 without heatsink, reducing BOM count and assembly cost.
Industrial PLC I/O Module	Automotive Infotainment DC-DC
Use Scenario: 24 V to 5 V isolated or non-isolated conversion for digital I/O conditioning circuits in programmable logic controllers. IC Role / Device Role / Timing Role: Primary high-side switch in buck topology, leveraging −20 V rating to tolerate 24 V transients per ISO 16750-2. Use Value: V_GS(th) = −0.6 to −1.5 V ensures reliable turn-on with standard 3.3 V/5 V logic outputs, eliminating level-shifter complexity.	Use Scenario: Secondary-side synchronous rectifier in 12 V to 5 V/3.3 V buck converters powering audio DSPs and display controllers. IC Role / Device Role / Timing Role: Schottky-integrated MOSFET replacing discrete diode + MOSFET pair in automotive-grade power supplies. Use Value: Halogen-free construction and −55 to 150 °C operating range meet AEC-Q101 requirements for under-hood infotainment systems.

HDD DC-DC Converter

Portable SSD Power Management

Use Scenario: Step-down conversion from 12 V or 19 V battery/supply to 5 V or 3.3 V for HDD spindle motor and controller ICs.

IC Role / Device Role / Timing Role: Synchronous rectifier switch and integrated freewheeling diode in buck converter secondary side.

Use Value: Schottky V_F = 0.5 V cuts conduction loss by ~40% vs. MOSFET body diode, directly improving light-load efficiency critical for HDD idle modes.

Use Scenario: Compact, high-density power stage in M.2 or 2.5″ SSDs where board space and thermal headroom are severely limited.

IC Role / Device Role / Timing Role: Low-R_DS(on) P-channel switch controlling 3.3 V or 5 V VCC rail with integrated diode for reverse polarity protection and inrush limiting.

Use Value: TSOP-6 footprint and R_thJA = 93 °C/W allow full −3.3 A rating on 1″ × 1″ FR4 without heatsink, reducing BOM count and assembly cost.

Industrial PLC I/O Module

Automotive Infotainment DC-DC

Use Scenario: 24 V to 5 V isolated or non-isolated conversion for digital I/O conditioning circuits in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary high-side switch in buck topology, leveraging −20 V rating to tolerate 24 V transients per ISO 16750-2.

Use Value: V_GS(th) = −0.6 to −1.5 V ensures reliable turn-on with standard 3.3 V/5 V logic outputs, eliminating level-shifter complexity.

Use Scenario: Secondary-side synchronous rectifier in 12 V to 5 V/3.3 V buck converters powering audio DSPs and display controllers.

IC Role / Device Role / Timing Role: Schottky-integrated MOSFET replacing discrete diode + MOSFET pair in automotive-grade power supplies.

Use Value: Halogen-free construction and −55 to 150 °C operating range meet AEC-Q101 requirements for under-hood infotainment systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel Schottky MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si3434DV-T1-GE3	Same TSOP-6 package, but N-channel; V_DS = 30 V, R_DS(on) = 0.022 Ω @ V_GS = 10 V; no integrated Schottky.	Requires high-side driver or bootstrap circuit; lacks integrated diode, increasing component count in buck freewheeling.	Select only when N-channel topology and higher voltage rating are mandatory; not drop-in compatible.
DMN3020LSD-13	P-channel, 30 V, R_DS(on) = 0.032 Ω @ V_GS = −10 V; dual-SO-8 package; no integrated Schottky.	Larger footprint (SO-8 vs. TSOP-6); higher thermal resistance (R_thJA ≈ 110 °C/W); requires external diode.	Choose for higher voltage margin or when SO-8 layout reuse is prioritized over size/efficiency.

Compared with SI3805DV-T1-GE3, Si3434DV-T1-GE3 shifts topology to N-channel with lower R_DS(on) but adds driver complexity and loses diode integration, while DMN3020LSD-13 offers higher V_DS in a larger package without Schottky benefits - making SI3805DV-T1-GE3 optimal for space-constrained, efficiency-critical P-channel buck applications.

Availability

SI3805DV-T1-GE3 is available at Aetrix Electronics and suitable for HDD DC-DC converters, portable SSD power management, and industrial PLC I/O modules requiring stable component supply, halogen-free compliance, and compact thermal design.

Supply support for SI3805DV-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and application-specific packaging.

The SI3805DV product line targets high-efficiency, space-constrained DC-DC conversion in data storage and portable electronics, combining P-channel MOSFETs with integrated Schottky diodes in ultra-thin TSOP-6 packages to eliminate external components and reduce thermal resistance.

FAQ

What is the maximum continuous drain current rating for SI3805DV-T1-GE3 at 70 °C case temperature?

The maximum continuous drain current for SI3805DV-T1-GE3 is −2.7 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOP-6 package under sustained power dissipation; designers must verify PCB copper area and airflow to maintain safe junction temperatures below 150 °C. SI3805DV-T1-GE3 achieves this rating using its integrated drain-paddle thermal path.

Does SI3805DV-T1-GE3 include a body diode, and how does it differ from the integrated Schottky diode?

Yes, SI3805DV-T1-GE3 has a parasitic body diode inherent to its MOSFET structure, with V_SD = −0.75 to −1.2 V and t_rr = 23–35 ns. However, it also integrates a separate Schottky diode (V_F = 0.42–0.50 V @ 1 A) between the same terminals. The Schottky conducts preferentially due to lower forward voltage, suppressing body diode conduction and eliminating reverse recovery losses - a key advantage confirmed in Vishay's Schottky Specifications section for SI3805DV-T1-GE3.

What is the gate threshold voltage range for SI3805DV-T1-GE3, and how does it affect drive compatibility?

The gate threshold voltage (V_GS(th)) for SI3805DV-T1-GE3 is −0.6 V to −1.5 V at I_D = −250 µA, enabling reliable turn-on with standard 3.3 V or 5 V logic outputs. This logic-level compatibility eliminates the need for gate drivers in low-frequency applications. The specification is validated across temperature (−55 to 150 °C) and ensures consistent switching behavior in SI3805DV-T1-GE3-based power stages.

How is thermal performance characterized for SI3805DV-T1-GE3, and what does R_thJF = 75 °C/W mean in practice?

SI3805DV-T1-GE3 specifies R_thJF = 75 °C/W (steady-state) from junction to foot (drain paddle), measured with infinite heatsink conditions. In practice, this means that with adequate PCB copper connected to pins 1/2/5/6, SI3805DV-T1-GE3 can dissipate 1 W with only a 75 °C temperature rise from junction to PCB copper - a critical metric for thermal design in space-constrained HDD and SSD applications per Vishay AN823.

Is SI3805DV-T1-GE3 pin-compatible with other TSOP-6 P-channel MOSFETs, and what layout considerations are unique?

SI3805DV-T1-GE3 uses the standard TSOP-6 footprint (JEDEC MO-193C), but its drain pins (1, 2, 5, 6) are internally shorted and serve as thermal pads - requiring a dedicated copper plane per Vishay AN823. Unlike generic TSOP-6 devices, SI3805DV-T1-GE3 demands minimum pad dimensions from Doc# 72610 and thermal vias under the drain area to achieve rated current and thermal performance. Layout deviations will degrade R_thJA and I_D capability.

SI3805DV-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: LITTLE FOOT®

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 3.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 84mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 330 pF @ 10 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 1.1W (Ta), 1.4W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

SI3805DV-T1-GE3 FAQ

1.How can I place an order for SI3805DV-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI3805DV-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI3805DV-T1-GE3 reliable?

The price and inventory of SI3805DV-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI3805DV-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI3805DV-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI3805DV-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI3805DV-T1-GE3?

SI3805DV-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI3805DV-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI3805DV-T1-GE3?

For technical support, including SI3805DV-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI3805DV-T1-GE3 requirements.

6.How does Aetrix verify that SI3805DV-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI3805DV-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI3805DV-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI3805DV-T1-GE3?

All SI3805DV-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI3805DV-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI3805DV-T1-GE3 part is unused and in its original packaging.

Return procedure for SI3805DV-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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