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Vishay Siliconix SI4190BDY-T1-GE3
- Part No.:
- SI4190BDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4190BDY-T1-GE3.pdf
- Description:
- N-CHANNEL 100 V (D-S) MOSFET SO-
- Quantity:
- Payment:
- Shipping:
Inventory:8,858
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Product details
Overview
SI4190BDY-T1-GE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® Gen IV power MOSFET in SO-8 package, rated for 17 A continuous drain current at TC = 25 °C, with RDS(on) of 7.7 mΩ at VGS = 10 V and 8.4 mΩ at VGS = 4.5 V, optimized for synchronous rectification and DC/DC converter primary-side switching.
For engineers reviewing the SI4190BDY-T1-GE3 datasheet, SI4190BDY-T1-GE3 pinout, SI4190BDY-T1-GE3 application, or SI4190BDY-T1-GE3 equivalent, key selection criteria include logic-level gate drive capability, low RDS(on) × Qg and RDS(on) × Qoss figures-of-merit, 100 % Rg and UIS testing, and thermal performance under high-frequency switching in compact power stages.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve enhanced conduction efficiency and fast switching dynamics. Its gate threshold voltage (1–2.5 V) enables direct interfacing with 3.3 V and 5 V logic controllers, while its low output charge (Qoss = 39.5 pF) and reverse transfer capacitance (Crss = 14 pF) reduce switching losses in hard-switched topologies.
The device features a single N-channel configuration with integrated body diode (VSD = 0.74–1.1 V at IS = 5 A), reverse recovery time trr = 39–78 ns, and avalanche-rated ruggedness (EAS = 45 mJ, IAS = 30 A), supporting reliable operation in inductive load switching and energy-recycling circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 100 V - supports input rails up to 48 V nominal DC/DC converters with margin for transients |
| RDS(on) @ 10 V | 7.7 mΩ typ - enables <1 W conduction loss at 10 A, critical for high-efficiency 12–48 V systems |
| RDS(on) @ 4.5 V | 8.4 mΩ typ - ensures full enhancement with standard logic-level drivers without level-shifting |
| Qg @ 10 V | 62 nC typ - balances gate drive strength and switching speed for 100–500 kHz operation |
| Qoss | 39.5 pF - minimizes capacitive turn-off loss and improves light-load efficiency in resonant topologies |
| PD @ TC = 25 °C | 8.4 W - allows >15 A pulsed current handling with external heatsinking on FR4 PCB |
| RthJC | 16 °C/W max - enables thermal coupling to copper pour or heatsink for sustained 10–12 A operation |
Pinout & Package
SO-8 (narrow-body, JEDEC MS-012), surface-mount package with exposed drain paddle for thermal and electrical connection. Dimensions: 4.9 mm × 6.0 mm × 1.55 mm (D × H × A), lead pitch 1.27 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, S | Source | Common source node; pins 1–3 internally bonded to source metallization and drain paddle ground plane |
| 4 | Gate | Control terminal; requires ≤20 V gate-source swing; logic-level compatible down to 4.5 V |
| 5, 6, 7, 8, D | Drain | High-side switch node; pins 5–8 and exposed bottom paddle form low-inductance drain path |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV architecture | Delivers industry-leading RDS(on) × Qg FOM for reduced total switching + conduction loss in high-frequency SMPS |
| 100 % Rg tested | Ensures consistent gate resistance (0.3–1.5 Ω) across production lots, critical for predictable turn-on timing |
| 100 % UIS tested | Guarantees unclamped inductive switching robustness up to 30 A and 45 mJ, eliminating need for external snubbers |
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5 V, enabling direct drive from microcontrollers and PWM ICs without gate drivers |
| Lead (Pb)-free and halogen-free | Complies with RoHS 2011/65/EU and Vishay's Green Standard (Doc. #99912) |
Applications
| Synchronous Rectifier | Primary-Side Switch |
|---|---|
Use Scenario: Secondary-side synchronous rectification in isolated 12 V/48 V DC/DC converters for telecom and server PSUs. IC Role / Device Role / Timing Role: Low-side N-channel switch replacing Schottky diode; driven by transformer-coupled or controller-synchronized gate signal. Use Value: Reduces forward voltage drop from ~0.5 V to <0.01 V at 10 A, improving conversion efficiency by 2–4 % over wide load range. | Use Scenario: High-side main switch in non-isolated buck converters for industrial motor drives and LED lighting. IC Role / Device Role / Timing Role: Primary power switch controlled by PWM controller; handles full input voltage and load current. Use Value: Low RDS(on) and Qoss enable >95 % peak efficiency at 200 kHz, with minimal thermal derating on 1" × 1" FR4 board. |
| DC/DC Converter | Motor Drive Switch |
Use Scenario: Input-stage high-side switch in 48 V automotive DC/DC modules powering ADAS ECUs and infotainment systems. IC Role / Device Role / Timing Role: Main switching element in buck or half-bridge topology; subjected to repetitive 100 V transients and high di/dt. Use Value: Avalanche rating (IAS = 30 A, EAS = 45 mJ) prevents failure during load dump or short-circuit events without added protection. | Use Scenario: H-bridge low-side switch in 24 V brushed DC motor control for HVAC actuators and power seats. IC Role / Device Role / Timing Role: PWM-controlled current sink; commutates motor winding current with fast fall time (tf = 5–10 ns). Use Value: Fast switching (td(off) = 35–72 ns) and low Qgd (5.5 nC) minimize shoot-through risk and dead-time losses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 10.5 mΩ @ 10 V; Qg = 42 nC; SO-8 package; no UIS rating specified | Lacks avalanche ruggedness verification; higher conduction loss at same current | Acceptable where transient stress is low and layout allows higher RDS(on) trade-off |
| STL100N10F7 | RDS(on) = 7.5 mΩ @ 10 V; Qg = 52 nC; TO-220FP package; 100 V rating | Larger through-hole package; higher thermal resistance (RthJC = 2.5 °C/W) but higher PD (60 W) | Preferred for higher-power, lower-frequency designs requiring greater heatsinking headroom |
Compared with IRF7470PBF and STL100N10F7, SI4190BDY-T1-GE3 offers superior RDS(on) × Qoss optimization and factory-verified UIS performance in a compact SO-8 footprint-making it ideal for space-constrained, high-reliability 100 V switching applications demanding both efficiency and ruggedness.
Availability
SI4190BDY-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, primary-side switching, and motor drive applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and automotive-grade programs.
Supply support for SI4190BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and miniaturization.
The SI4190BDY-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-frequency, high-efficiency DC/DC conversion and motor control in space- and thermally-constrained environments.
FAQ
What is the maximum continuous drain current rating for SI4190BDY-T1-GE3 at TC = 70 °C?
The SI4190BDY-T1-GE3 has a maximum continuous drain current ID of 13.6 A at case temperature TC = 70 °C, per its Absolute Maximum Ratings table. This value reflects thermal derating from the 17 A rating at TC = 25 °C and must be validated against actual board layout, copper area, and airflow conditions in the final design using the provided RthJC and RthJA data.
Does SI4190BDY-T1-GE3 support logic-level gate drive, and what is its VGS(th) range?
Yes, SI4190BDY-T1-GE3 supports logic-level gate drive with a gate-source threshold voltage VGS(th) ranging from 1.0 V to 2.5 V at TJ = 25 °C and ID = 250 μA. This allows full enhancement at VGS = 4.5 V, making it compatible with standard 3.3 V and 5 V microcontroller outputs without external level-shifting circuitry.
Is SI4190BDY-T1-GE3 qualified for avalanche energy handling, and what are the rated values?
Yes, SI4190BDY-T1-GE3 is 100 % UIS tested and rated for single-pulse avalanche energy EAS = 45 mJ and single-pulse avalanche current IAS = 30 A (L = 0.1 mH). These values are measured under standardized test conditions and confirm ruggedness against inductive switching stress in real-world motor and converter applications.
What is the thermal resistance from junction to case (RthJC) for SI4190BDY-T1-GE3, and how does it impact heatsinking?
The maximum junction-to-case thermal resistance RthJC for SI4190BDY-T1-GE3 is 21 °C/W, with a typical value of 16 °C/W. This low value enables effective heat transfer from the die to the PCB copper pour or external heatsink via the exposed drain paddle, supporting sustained operation at >10 A when mounted on ≥1" × 1" FR4 with 2 oz copper and thermal vias.
How does the body diode performance of SI4190BDY-T1-GE3 compare to standard Schottky diodes in synchronous rectification?
The SI4190BDY-T1-GE3 body diode has a forward voltage VSD = 0.74–1.1 V at IS = 5 A and reverse recovery time trr = 39–78 ns. While higher VSD than Schottky diodes, its fast trr and low Qrr (68–136 nC) minimize reverse recovery loss-especially when actively commutated-and its integration eliminates discrete component count and layout parasitics in synchronous rectifier designs.
SI4190BDY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Ta), 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 95 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4150 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 8.4W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4190BDY-T1-GE3 FAQ
1.How can I place an order for SI4190BDY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4190BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4190BDY-T1-GE3 reliable?
The price and inventory of SI4190BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4190BDY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4190BDY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4190BDY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4190BDY-T1-GE3?
SI4190BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4190BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4190BDY-T1-GE3?
For technical support, including SI4190BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4190BDY-T1-GE3 requirements.
6.How does Aetrix verify that SI4190BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4190BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4190BDY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4190BDY-T1-GE3?
All SI4190BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4190BDY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4190BDY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4190BDY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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