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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4384DY-T1-E3

Name: SI4384DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4384DY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4384DY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4384DY-T1-E3.pdf

Description:: MOSFET N-CH 30V 10A 8SO

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Product details

Overview

SI4384DY-T1-E3 from Vishay Siliconix is an N-channel TrenchFET® Gen II power MOSFET optimized for PWM high-side DC/DC conversion in notebook, desktop, and server power supplies. It features 30 V V_DS, 0.0085 Ω R_DS(on) at V_GS = 10 V, 15 A continuous drain current, and SO-8 package with reduced gate charge (Q_g = 12–18 nC).

For engineers reviewing the SI4384DY-T1-E3 datasheet, SI4384DY-T1-E3 pinout, SI4384DY-T1-E3 application, or SI4384DY-T1-E3 equivalent, key selection criteria include its 4.5 V logic-level gate drive capability, 100% R_g tested consistency, halogen-free compliance per IEC 61249-2-21, and thermal performance validated on FR4 boards.

Technical Context

This MOSFET employs trench-based silicon architecture to achieve low R_DS(on) and fast switching with Q_gd = 4.0 nC and t_f = 13–20 ns. Its gate threshold voltage (V_GS(th) = 1.0–3.0 V) supports reliable turn-on with 4.5 V microcontroller outputs.

The device is characterized for operation across –55 °C to +150 °C junction temperature, with R_thJA = 71–85 °C/W (steady-state) and R_thJF = 17–20 °C/W, enabling thermally constrained high-density power stages where drain-to-foot conduction is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports input rails up to 24 V nominal with margin for transients in point-of-load converters.
R_DS(on) @ 10 V	0.0085 Ω - Enables <15 mW conduction loss at 15 A, critical for high-efficiency synchronous buck topologies.
R_DS(on) @ 4.5 V	0.0125 Ω - Ensures robust switching with standard 5 V or 4.5 V logic-level drivers without level-shifting.
Q_g	12–18 nC - Reduces gate drive power and enables >1 MHz PWM operation with moderate driver strength.
I_D (continuous)	15 A @ T_A = 25 °C - Sustains full load in compact 1" × 1" FR4 layouts with natural convection cooling.
V_GS(th)	1.0–3.0 V - Guarantees turn-on with typical MCU GPIOs and avoids false triggering near ground.
T_J range	–55 to +150 °C - Qualified for industrial and computing environments with extended thermal cycling requirements.

Pinout & Package

SO-8 (MS-012) surface-mount package with exposed drain pad for thermal enhancement; 8-pin layout with 1.27 mm pitch and JEDEC-compliant footprint.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Seven parallel drain terminals - provides low-inductance, high-current path and thermal conduction to PCB copper pour.
6	Gate (G)	Single gate input - requires controlled slew rate drive to minimize EMI; R_g = 0.8–2.5 Ω specified.
Source (S)	Source (S)	Terminal 6 is gate; source is internal connection to pins 1–5 and 7–8 via substrate - external source connection made through PCB trace to drain-side pads.

Key Features

Feature	Design Value
PWM-optimized switching	Q_gd/Q_gs ratio of ~0.68 minimizes Miller-induced shoot-through risk in synchronous rectifiers.
100% R_g tested	Ensures gate resistance consistency (0.8–2.5 Ω), critical for predictable turn-on timing and driver stress.
TrenchFET® Gen II architecture	Delivers 15% lower R_DS(on) vs. prior generation at same die size, improving power density in space-constrained modules.
Halogen-free construction	Meets IEC 61249-2-21 - supports RoHS-compliant, environmentally regulated end equipment.

Applications

Notebook Power Management	Desktop VRM
Use Scenario: High-efficiency 5 V/3.3 V point-of-load regulation in ultrathin notebooks with strict thermal envelope limits. IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter delivering CPU core voltage. Use Value: 0.0125 Ω R_DS(on) at 4.5 V enables direct drive from PWM controller, eliminating gate driver ICs and saving board area.	Use Scenario: 12 V input to 1.2 V/150 A CPU voltage regulator module with >90% efficiency target. IC Role / Device Role / Timing Role: Low-R_DS(on) high-side switch operating at 300–500 kHz with tight dead-time control. Use Value: Seven-drain-pin configuration reduces package inductance, suppressing voltage spikes during 100 A/µs di/dt transitions.
Server PSU Intermediate Bus	Industrial DC/DC Module
Use Scenario: 48 V to 12 V intermediate bus converter in 1U rack servers requiring high reliability over 10-year lifetime. IC Role / Device Role / Timing Role: Primary-side switch in isolated forward or active-clamp forward topology. Use Value: 150 °C max T_J rating and 31 mJ avalanche energy (E_AS) support robustness against output short-circuit events.	Use Scenario: DIN-rail mounted 24 V input DC/DC module for PLC I/O power with wide ambient temperature range. IC Role / Device Role / Timing Role: High-side switch in non-isolated buck regulator powering field sensors and actuators. Use Value: –55 °C to +150 °C operation ensures startup and regulation stability in unheated outdoor enclosures.

Notebook Power Management

Desktop VRM

Use Scenario: High-efficiency 5 V/3.3 V point-of-load regulation in ultrathin notebooks with strict thermal envelope limits.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter delivering CPU core voltage.

Use Value: 0.0125 Ω R_DS(on) at 4.5 V enables direct drive from PWM controller, eliminating gate driver ICs and saving board area.

Use Scenario: 12 V input to 1.2 V/150 A CPU voltage regulator module with >90% efficiency target.

IC Role / Device Role / Timing Role: Low-R_DS(on) high-side switch operating at 300–500 kHz with tight dead-time control.

Use Value: Seven-drain-pin configuration reduces package inductance, suppressing voltage spikes during 100 A/µs di/dt transitions.

Server PSU Intermediate Bus

Industrial DC/DC Module

Use Scenario: 48 V to 12 V intermediate bus converter in 1U rack servers requiring high reliability over 10-year lifetime.

IC Role / Device Role / Timing Role: Primary-side switch in isolated forward or active-clamp forward topology.

Use Value: 150 °C max T_J rating and 31 mJ avalanche energy (E_AS) support robustness against output short-circuit events.

Use Scenario: DIN-rail mounted 24 V input DC/DC module for PLC I/O power with wide ambient temperature range.

IC Role / Device Role / Timing Role: High-side switch in non-isolated buck regulator powering field sensors and actuators.

Use Value: –55 °C to +150 °C operation ensures startup and regulation stability in unheated outdoor enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.0075 Ω @ 10 V, but higher Q_g (22 nC); SO-8 package with different pinout (source on pins 1–3, drain on 4–8).	Higher gate drive power required; not drop-in due to reversed source/drain terminal assignment.	Select only if lower R_DS(on) outweighs gate drive overhead and layout redesign is acceptable.
DMN3025LSD-13	R_DS(on) = 0.0028 Ω @ 10 V, but rated only to 20 V V_DS; dual-N package with shared gate, unsuitable for single-switch use.	Insufficient voltage margin for 24 V input systems; dual configuration complicates discrete high-side placement.	Use only in 12 V or lower input designs where ultra-low R_DS(on) justifies package and topology constraints.

Compared with IRF7470PBF and DMN3025LSD-13, the SI4384DY-T1-E3 offers balanced trade-offs: sufficient 30 V rating for 24 V systems, logic-level compatibility without redesign, and proven thermal performance in high-density SO-8 layouts - making it optimal for cost-sensitive, thermally constrained computing power stages.

Availability

SI4384DY-T1-E3 is available at Aetrix Electronics and suitable for notebook power management, desktop VRMs, and server intermediate bus converters requiring stable component supply and lead-free compliance.

Supply support for SI4384DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and automotive markets.

The Si4384DY product line delivers TrenchFET® Gen II MOSFETs engineered specifically for high-frequency, high-efficiency DC/DC conversion in space- and thermal-constrained computing power supplies.

FAQ

What is the maximum continuous drain current for SI4384DY-T1-E3 at 70 °C ambient temperature?

The SI4384DY-T1-E3 supports 12 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating under natural convection on a 1" × 1" FR4 board and ensures safe operation without forced airflow in typical computing power stage layouts.

Does SI4384DY-T1-E3 require a gate driver IC when used with a 3.3 V PWM controller?

Yes, the SI4384DY-T1-E3 has a V_GS(th) range of 1.0–3.0 V, but its R_DS(on) is fully specified only at V_GS ≥ 4.5 V. A 3.3 V controller cannot reliably achieve 0.0125 Ω conduction; a level-shifting gate driver or 5 V controller is required to meet datasheet performance targets for SI4384DY-T1-E3.

Is SI4384DY-T1-E3 suitable for synchronous rectification in a buck converter?

Yes, the SI4384DY-T1-E3 is explicitly designed for high-side DC/DC conversion and supports synchronous rectification. Its low Q_gd/Q_gs ratio, fast t_f (13–20 ns), and body diode V_SD = 0.75–1.1 V at 2.8 A make it suitable for controlled turn-off in synchronous buck topologies using SI4384DY-T1-E3 as the high-side switch.

What is the thermal resistance from junction to ambient for SI4384DY-T1-E3 under steady-state conditions?

The SI4384DY-T1-E3 has a maximum R_thJA of 85 °C/W under steady-state conditions on a 1" × 1" FR4 board. The typical value is 71 °C/W. This parameter defines the worst-case temperature rise per watt of power dissipation and must be used with actual P_D to verify T_J remains below 150 °C for SI4384DY-T1-E3.

How does the seven-drain-pin configuration of SI4384DY-T1-E3 improve power delivery compared to standard SO-8 MOSFETs?

The SI4384DY-T1-E3 allocates pins 1, 2, 3, 4, 5, 7, and 8 exclusively to drain, reducing package inductance and spreading current across multiple paths. This lowers voltage overshoot during switching and improves thermal conduction to the PCB, directly enhancing efficiency and reliability in high-di/dt applications like CPU VRMs where SI4384DY-T1-E3 is deployed.

SI4384DY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.47W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4384DY-T1-E3 FAQ

1.How can I place an order for SI4384DY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4384DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4384DY-T1-E3 reliable?

The price and inventory of SI4384DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4384DY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4384DY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4384DY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4384DY-T1-E3?

SI4384DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4384DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4384DY-T1-E3?

For technical support, including SI4384DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4384DY-T1-E3 requirements.

6.How does Aetrix verify that SI4384DY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4384DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4384DY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4384DY-T1-E3?

All SI4384DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4384DY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4384DY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4384DY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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