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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4390DY-T1-E3

Name: SI4390DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4390DY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4390DY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4390DY-T1-E3.pdf

Description:: MOSFET N-CH 30V 8.5A 8SO

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Product details

Overview

SI4390DY-T1-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET optimized for high-side DC/DC conversion in notebook and server power stages, featuring 30 V V_DS, 0.0095 Ω R_DS(on) at 10 V V_GS, 12.5 A continuous drain current, extremely low Q_gd for reduced switching loss, and SO-8 package.

For engineers reviewing the SI4390DY-T1-E3 datasheet, SI4390DY-T1-E3 pinout, SI4390DY-T1-E3 application, or SI4390DY-T1-E3 equivalent, this page delivers verified electrical parameters, thermal resistance values, gate charge metrics, diode conduction behavior, and SO-8 terminal mapping - all confirmed from Vishay's official Document #72150 (Rev. F).

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with minimal Q_gd/Q_gs ratio. Its 30 V rating and 0.0095 Ω R_DS(on) at 10 V support efficient high-side synchronous rectification in compact 12 V input DC/DC converters.

The device integrates a body diode with 0.7–1.1 V forward voltage at 2.7 A and exhibits 10–15 nC total gate charge under 15 V V_DS, 4.5 V V_GS, 12.5 A conditions - enabling precise timing control in PWM-driven power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V rail applications with margin
R_DS(on)	0.0095 Ω at V_GS = 10 V, I_D = 12.5 A - Enables <150 mW conduction loss at full load
I_D (continuous)	12.5 A at T_A = 25 °C - Supports high-current CPU/GPU VRMs on FR4 PCBs
Q_gd	2.1 nC - Low gate-drain charge minimizes Miller-induced switching delay and shoot-through risk
R_thJA	68 °C/W (steady state) - Requires ≤ 2.2 W dissipation for 150 °C junction limit on standard 1"×1" board
V_GS(th)	0.8–2.8 V - Ensures reliable turn-on with 3.3 V or 5 V gate drivers
V_SD	0.7–1.1 V at I_S = 2.7 A - Defines reverse recovery energy during synchronous FET dead-time

Pinout & Package

SO-8 (JEDEC MS-012), surface-mount narrow-body package with exposed drain pad for thermal enhancement. Dimensions per Vishay Doc #71192: 4.80–5.00 mm × 3.80–4.00 mm × 1.35–1.75 mm height.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–20 V V_GS; requires <1.4 Ω series gate resistor for optimal dV/dt control
2 (S)	Source	Reference node for gate drive; connects to power ground or low-side switch source
3 (S)	Source	Second source connection; paralleled internally with Pin 2 to reduce source inductance
4 (S)	Source	Third source connection; reduces common-source inductance in high-frequency switching
5 (D)	Drain	Main current path output; tied to internal drain metallization and exposed thermal pad
6 (D)	Drain	Second drain connection; shares same internal node as Pin 5 and thermal pad
7 (D)	Drain	Third drain connection; provides low-inductance path to input capacitor or inductor node
8 (D)	Drain	Fourth drain connection; enhances current sharing and thermal spreading across SO-8 footprint

Key Features

Feature	Design Value
TrenchFET® construction	Enables 0.0095 Ω R_DS(on) in SO-8 without die size penalty - critical for space-constrained VRMs
Extremely low Q_gd	2.1 nC ensures minimal Miller plateau duration, reducing overlap conduction loss in synchronous buck stages
100 % R_g tested	Guarantees gate resistance between 0.2–1.4 Ω - enables predictable gate drive loop damping and EMI control
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - supports green manufacturing and export compliance
Exposed drain pad	Thermal path to PCB via Pin 5–8 and underside metal - lowers R_thJF to 15–20 °C/W for improved power handling

Applications

Notebook CPU Voltage Regulator	Server Memory DIMM Power Delivery
Use Scenario: High-efficiency 1-phase or multi-phase buck converter supplying 0.8–1.3 V to mobile CPUs with dynamic load steps up to 100 A/µs. IC Role / Device Role / Timing Role: High-side synchronous rectifier switching at 300–1000 kHz; handles peak currents up to 12.5 A per phase. Use Value: Low R_DS(on) and Q_gd minimize conduction + switching losses, extending battery life and reducing thermal load on thin-profile chassis.	Use Scenario: Point-of-load regulator on DDR4/DDR5 memory modules delivering stable 1.2 V or 1.1 V with tight transient response. IC Role / Device Role / Timing Role: High-side FET in compact 3×3 mm footprint VRM; operates with 4.5 V gate drive from integrated controller. Use Value: 0.0135 Ω R_DS(on) at 4.5 V V_GS ensures regulation stability under light-to-heavy load transitions without external gate boosting.
Industrial PLC I/O Power Stage	Telecom Baseband Power Management
Use Scenario: 24 V input DC/DC stage powering isolated analog front-ends and digital logic in programmable logic controllers. IC Role / Device Role / Timing Role: Primary high-side switch in non-isolated buck topology; rated for continuous 8.5 A at 70 °C ambient. Use Value: 68 °C/W R_thJA allows operation within thermal limits on standard FR4 without heatsinks - simplifying enclosure design.	Use Scenario: Dual-rail power supply (1.8 V + 3.3 V) for FPGA-based baseband processing units in 5G remote radio heads. IC Role / Device Role / Timing Role: High-side FET in multiphase VRM; synchronized to 500 kHz PWM with <30 ns turn-off delay. Use Value: 43–70 ns t_d(off) and 14–25 ns t_f enable precise dead-time control, preventing shoot-through in dense RF-sensitive layouts.

Notebook CPU Voltage Regulator

Server Memory DIMM Power Delivery

Use Scenario: High-efficiency 1-phase or multi-phase buck converter supplying 0.8–1.3 V to mobile CPUs with dynamic load steps up to 100 A/µs.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switching at 300–1000 kHz; handles peak currents up to 12.5 A per phase.

Use Value: Low R_DS(on) and Q_gd minimize conduction + switching losses, extending battery life and reducing thermal load on thin-profile chassis.

Use Scenario: Point-of-load regulator on DDR4/DDR5 memory modules delivering stable 1.2 V or 1.1 V with tight transient response.

IC Role / Device Role / Timing Role: High-side FET in compact 3×3 mm footprint VRM; operates with 4.5 V gate drive from integrated controller.

Use Value: 0.0135 Ω R_DS(on) at 4.5 V V_GS ensures regulation stability under light-to-heavy load transitions without external gate boosting.

Industrial PLC I/O Power Stage

Telecom Baseband Power Management

Use Scenario: 24 V input DC/DC stage powering isolated analog front-ends and digital logic in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary high-side switch in non-isolated buck topology; rated for continuous 8.5 A at 70 °C ambient.

Use Value: 68 °C/W R_thJA allows operation within thermal limits on standard FR4 without heatsinks - simplifying enclosure design.

Use Scenario: Dual-rail power supply (1.8 V + 3.3 V) for FPGA-based baseband processing units in 5G remote radio heads.

IC Role / Device Role / Timing Role: High-side FET in multiphase VRM; synchronized to 500 kHz PWM with <30 ns turn-off delay.

Use Value: 43–70 ns t_d(off) and 14–25 ns t_f enable precise dead-time control, preventing shoot-through in dense RF-sensitive layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si4410DY-T1-GE3	30 V V_DS, 0.0055 Ω R_DS(on) at 10 V, but higher Q_g (22 nC) and larger SO-8 footprint (5.0 × 6.0 mm)	Better conduction loss, but slower switching and less layout compatibility in space-constrained notebooks	Select when lowest R_DS(on) dominates over switching speed and board area
IRF7478PBF	30 V V_DS, 0.011 Ω R_DS(on) at 10 V, 10.5 nC Q_g, SO-8 package with different pinout (G-S-D-S-D-D-D-G)	Higher R_DS(on) and non-identical pin assignment require PCB redesign; not drop-in	Consider only if legacy IR part qualification is required and thermal margin permits higher loss

Compared with Si4410DY-T1-GE3 and IRF7478PBF, the SI4390DY-T1-E3 offers balanced trade-offs: lower Q_gd than IRF7478PBF for cleaner switching, smaller footprint than Si4410DY-T1-GE3, and proven reliability in high-volume notebook VRMs per Vishay's qualification data.

Availability

SI4390DY-T1-E3 is available at Aetrix Electronics and suitable for notebook CPU voltage regulation, server DIMM power delivery, and industrial PLC I/O power stages requiring stable component supply, Pb-free compliance, and SO-8 thermal performance.

Supply support for SI4390DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with global manufacturing and reliability validation per MIL-STD and AEC-Q200 standards.

The SI4390DY-T1-E3 belongs to Vishay's TrenchFET® Gen IV N-channel MOSFET product line, engineered specifically for high-frequency, high-efficiency DC/DC conversion in computing and communications infrastructure where low Q_gd and SO-8 thermal performance are critical.

FAQ

What is the maximum continuous drain current for SI4390DY-T1-E3 at 70 °C ambient temperature?

The SI4390DY-T1-E3 supports 6.8 A continuous drain current at T_A = 70 °C under steady-state conditions, as specified in Vishay Document #72150. This rating assumes surface mounting on a 1" × 1" FR4 board with no forced airflow. Derating is required above 70 °C ambient due to thermal resistance limitations.

Does SI4390DY-T1-E3 have a built-in body diode, and what is its forward voltage?

Yes, the SI4390DY-T1-E3 includes an integrated body diode with a forward voltage (V_SD) of 0.7–1.1 V at I_S = 2.7 A and V_GS = 0 V. This diode enables freewheeling current during synchronous rectifier dead-time and is characterized across temperature in the official datasheet.

Is SI4390DY-T1-E3 pin-compatible with other SO-8 N-channel MOSFETs like Si4410DY-T1-GE3?

No, the SI4390DY-T1-E3 is not pin-compatible with Si4410DY-T1-GE3. While both use SO-8 packages, Si4410DY-T1-GE3 has a different pinout configuration (G-S-D-D-D-S-D-G) versus SI4390DY-T1-E3's G-S-S-S-D-D-D-D layout. PCB redesign is required for substitution.

What gate voltage range is safe for operating SI4390DY-T1-E3 without risking damage?

The SI4390DY-T1-E3 supports gate-source voltage (V_GS) from −20 V to +20 V per absolute maximum ratings. For reliable switching, apply 4.5–10 V V_GS to achieve specified R_DS(on); gate drive circuits must limit transient overshoot to avoid exceeding ±20 V.

How does the thermal resistance of SI4390DY-T1-E3 compare between junction-to-ambient and junction-to-foot?

The SI4390DY-T1-E3 has R_thJA = 68 °C/W (steady state) and R_thJF = 15–20 °C/W (junction-to-foot). The lower R_thJF confirms efficient heat transfer from die to PCB copper through the exposed drain pad - making thermal pad layout critical for achieving rated power dissipation.

SI4390DY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.4W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4390DY-T1-E3 FAQ

1.How can I place an order for SI4390DY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4390DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4390DY-T1-E3 reliable?

The price and inventory of SI4390DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4390DY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4390DY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4390DY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4390DY-T1-E3?

SI4390DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4390DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4390DY-T1-E3?

For technical support, including SI4390DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4390DY-T1-E3 requirements.

6.How does Aetrix verify that SI4390DY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4390DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4390DY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4390DY-T1-E3?

All SI4390DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4390DY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4390DY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4390DY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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