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NXP Semiconductors SI4410DY,518
- Part No.:
- SI4410DY,518
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4410DY,518.pdf
- Description:
- MOSFET N-CH 30V 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,413
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Product details
Overview
SI4410DY,518 from Nexperia is an N-channel TrenchMOS logic-level power MOSFET in SO8 (SOT96-1) package, designed for high-efficiency switching in DC-DC converters and battery-powered systems. It delivers 10 A continuous drain current at 25 °C, 30 V drain-source voltage rating, and 11–13.5 mΩ RDS(on) at VGS = 10 V, enabling low conduction loss in portable computing and lithium-ion battery protection circuits.
For engineers reviewing the SI4410DY,518 datasheet, SI4410DY,518 pinout, SI4410DY,518 application, or SI4410DY,518 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1 V typ), fast switching performance (td(off) ≤ 100 ns), thermal resistance (Rth(j-a) = 50 K/W), and SO8 footprint suitability for high-density PCB layouts in industrial and consumer power stages.
Technical Context
This device uses TrenchMOS technology to achieve low RDS(on) with enhanced gate charge control: QG(tot) = 40–60 nC at VGS = 10 V and QGD = 7 nC, supporting efficient high-frequency operation up to several hundred kHz. Its 1 V typical gate threshold enables direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting.
The integrated source-drain diode exhibits VSD = 0.7–1.1 V at IS = 2.3 A and trr = 50–80 ns, making it suitable for synchronous rectification and freewheeling paths where reverse recovery behavior impacts efficiency and EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V nominal systems and transient overvoltage margins. |
| ID (continuous) | 10 A at Tamb = 25 °C - Supports medium-power load switching in notebook DC-DC stages and motor drivers. |
| RDS(on) | 11–13.5 mΩ at VGS = 10 V - Enables <135 mW conduction loss at 10 A, reducing thermal stress in compact layouts. |
| VGS(th) | 1 V (min), typ - Ensures full enhancement with 3.3 V logic outputs, eliminating need for external gate drivers. |
| QGD | 7 nC - Low gate-drain charge minimizes Miller effect, improving switching stability in hard-switched topologies. |
| td(off) | 70–100 ns - Fast turn-off supports high-frequency PWM control in buck converters and battery protection ICs. |
| Tj max | 150 °C - Rated junction temperature allows operation in thermally constrained environments like sealed portable enclosures. |
Pinout & Package
Package: SO8 (SOT96-1), plastic small outline, 8-lead, 3.9 mm body width, surface-mountable with standard reflow profile.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce bond-wire inductance and improve current sharing in high-pulse applications. |
| 4 | Gate (G) | Single gate input optimized for logic-level drive; low Ciss and QG enable fast, low-loss switching. |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals provide low-inductance, high-current path to PCB copper pour for thermal and electrical performance. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5 V, enabling direct connection to 3.3 V/5 V MCU GPIOs without level shifters. |
| Low RDS(on) at 4.5 V | 15–20 mΩ - Maintains low conduction loss even with limited gate drive voltage, critical for battery-operated systems. |
| Fast switching | tr = 9–20 ns, tf = 30–80 ns - Reduces switching losses in high-frequency DC-DC converters (>300 kHz). |
| TrenchMOS architecture | Optimized cell density and reduced gate charge yield superior FOM (RDS(on) × QG) vs. planar MOSFETs. |
| SO8 thermal design | Drain-connected pins 5–8 allow direct thermal coupling to large PCB copper areas, lowering effective Rth(j-a). |
Applications
| DC Motor Control | DC-to-DC Converters |
|---|---|
Use Scenario: Bidirectional 12–24 V brushed DC motor drive in portable power tools and robotics. IC Role / Device Role / Timing Role: High-side or low-side switch controlling motor current direction and PWM speed regulation. Use Value: Low RDS(on) and fast switching minimize heat generation and improve battery runtime; logic-level gate simplifies MCU interface. |
Use Scenario: Synchronous rectifier in 5–12 V output buck converters for notebooks and embedded systems. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to reduce forward voltage drop and improve efficiency. Use Value: 11–13.5 mΩ RDS(on) at 10 V gate drive cuts conduction loss by >60% vs. 0.4 V Schottky, boosting converter efficiency above 92%. |
| Lithium-ion Battery Protection | Notebook Computers |
Use Scenario: Charge/discharge path switching in 2–4 cell Li-ion battery packs with integrated protection ICs. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET pair acting as bidirectional current-blocking switch. Use Value: 1 V VGS(th) ensures reliable turn-on under low-voltage cutoff conditions; low QGD prevents shoot-through during fast state transitions. |
Use Scenario: Point-of-load (POL) power delivery for CPU/GPU VRMs and peripheral rail regulation in ultra-thin laptops. IC Role / Device Role / Timing Role: High-efficiency, high-current power switch in multiphase buck stages operating at 500 kHz–1 MHz. Use Value: SO8 package with 4 drain pins supports high-current routing and thermal dissipation in space-constrained VRM layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 12.5 mΩ @ 10 V, but higher QG = 65 nC and slower td(off) (120 ns); TO-252 package. | Less suitable for high-frequency synchronous rectification due to higher gate charge and slower switching. | Prefer SI4410DY,518 when board space, thermal management, and >300 kHz operation are critical. |
| DMN3025LSD-13 | RDS(on) = 2.5 mΩ @ 10 V, but requires 10 V gate drive for full enhancement; SO8 package with same pinout. | Better for high-current, low-RDS(on) needs but incompatible with 3.3 V logic drive without gate driver. | Choose SI4410DY,518 for true logic-level operation with 3.3 V/5 V controllers; DMN3025LSD-13 only if 10 V gate bias is available. |
Compared with IRF7470PBF and DMN3025LSD-13, SI4410DY,518 uniquely balances logic-level compatibility (1 V VGS(th)), low QGD, SO8 thermal capability, and 11–13.5 mΩ RDS(on), making it optimal for space-constrained, battery-powered, and high-frequency switching applications where gate drive simplicity and thermal performance are jointly critical.
Availability
SI4410DY,518 is available at Aetrix Electronics and suitable for DC motor control, DC-to-DC convertors, and lithium-ion battery applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SI4410DY,518 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with focus on automotive, industrial, computing, and consumer markets.
The SI4410DY,518 belongs to Nexperia's TrenchMOS logic-level power MOSFET product line, engineered for high-efficiency, low-voltage switching in portable and embedded power systems where gate drive simplicity and thermal robustness are essential.
FAQ
What is the maximum continuous drain current for SI4410DY,518 at 70 °C ambient temperature?
The SI4410DY,518 supports 8 A continuous drain current at Tamb = 70 °C, per its limiting values table. This derating reflects thermal constraints of the SO8 package without heatsinking; actual current capacity increases with improved PCB copper area and airflow. The SI4410DY,518 datasheet specifies this value under pulsed conditions with defined thermal test setup.
Does SI4410DY,518 support 3.3 V logic-level gate drive?
Yes, SI4410DY,518 is a logic-level MOSFET with VGS(th) = 1 V (min) and RDS(on) = 15–20 mΩ at VGS = 4.5 V, ensuring full enhancement and low on-resistance when driven directly from 3.3 V microcontrollers. This eliminates the need for external gate drivers in most portable and embedded applications using the SI4410DY,518.
What is the safe operating area (SOA) limitation for SI4410DY,518 at DC operation?
Per Figure 3 in the SI4410DY,518 datasheet, the DC safe operating area is bounded by RDS(on) = VDS/ID line and thermal limits, allowing up to ~10 A at VDS < 1 V, decreasing to ~1.5 A at VDS = 10 V. Continuous operation must stay within this curve to avoid thermal runaway; the SI4410DY,518 is intended for pulsed or switched-mode use rather than linear-mode DC regulation.
Can SI4410DY,518 be used in synchronous rectification applications?
Yes, SI4410DY,518 is suitable for synchronous rectification due to its low RDS(on) (11–13.5 mΩ), fast switching (tf ≤ 80 ns), and integrated source-drain diode with trr = 50–80 ns. Its SO8 package allows robust thermal coupling to PCB, and the SI4410DY,518's logic-level gate enables simple timing control in buck converter secondary-side drives.
What is the thermal resistance from junction to ambient for SI4410DY,518 on a standard PCB?
The SI4410DY,518 has Rth(j-a) = 50 K/W when mounted on a printed-circuit board with minimum footprint, per Table 5. This value assumes no additional copper pour or thermal vias; adding 1–2 in² of 2 oz copper connected to drain pins reduces effective Rth(j-a) to ~35–40 K/W, significantly improving power handling for the SI4410DY,518 in real-world layouts.
SI4410DY,518 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 13.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
SI4410DY,518 FAQ
1.How can I place an order for SI4410DY,518 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4410DY,518 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4410DY,518 reliable?
The price and inventory of SI4410DY,518 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4410DY,518 is usually 5 days.
3.What payment methods are accepted for SI4410DY,518?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4410DY,518 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4410DY,518?
SI4410DY,518 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4410DY,518 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4410DY,518?
For technical support, including SI4410DY,518 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4410DY,518 requirements.
6.How does Aetrix verify that SI4410DY,518 is sourced from the original manufacturer or authorized distributors?
All SI4410DY,518 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4410DY,518 meets industry standards.
7.What is the process for return or replacement of SI4410DY,518?
All SI4410DY,518 units undergo pre-shipment inspection (PSI). If there is an issue with SI4410DY,518, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4410DY,518 part is unused and in its original packaging.
Return procedure for SI4410DY,518:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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