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onsemi SI4420DY

Part No.:
SI4420DY
Manufacturer:
onsemi
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixSI4420DY.pdf
Description:
MOSFET N-CH 30V 12.5A 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,709

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Product details

Overview

SI4420DY from Vishay Siliconix (formerly International Rectifier) is an N-channel logic-level power MOSFET in SO-8 package, rated for 30 V VDS, 12.5 A continuous drain current at 25°C, and 0.009 Ω RDS(on) at VGS = 10 V. It features low gate charge (52 nC typical), fast switching (tr = 10 ns), and integrated body diode with 1.1 V forward voltage - optimized for synchronous buck converters in portable battery-powered systems.

For engineers reviewing the SI4420DY datasheet, SI4420DY pinout, SI4420DY application, or SI4420DY equivalent, key selection criteria include its logic-level drive compatibility (VGS(th) = 1.0–2.5 V), thermal resistance (RθJA = 50 °C/W), avalanche energy rating (400 mJ), and SO-8 copper leadframe construction enabling >800 mW dissipation on FR4 boards.

Technical Context

This device implements a planar HEXFET structure with optimized channel geometry to achieve low RDS(on) and reduced Miller charge (Qgd = 12 nC). Its gate threshold voltage (1.0–2.5 V) ensures reliable turn-on with 3.3 V or 5 V logic controllers without level-shifting circuitry.

The integrated source-drain diode exhibits 52 ns reverse recovery time and 1.1 V forward drop at 2.3 A, supporting high-frequency synchronous rectification. Thermal design leverages the SO-8's copper leadframe and low RθJA to sustain 10 A continuous operation at 70°C ambient when properly mounted on standard PCBs.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - supports 24 V nominal input rails with margin for transients
RDS(on) @ VGS = 10 V0.009 Ω - enables <100 mW conduction loss at 10 A DC
Qg52 nC typical - reduces gate driver power and switching losses in 500 kHz+ converters
ID continuous @ TA = 25°C±12.5 A - suitable for medium-power DC-DC stages up to ~30 W
EAS400 mJ - withstands single-pulse inductive energy during hard-switching events
RθJA50 °C/W - allows ~800 mW dissipation on FR4 with minimal copper area
VGS(th)1.0–2.5 V - fully enhances with 3.3 V microcontroller GPIO or PWM controller outputs

Pinout & Package

SO-8 surface-mount package with exposed copper leadframe for enhanced thermal performance; JEDEC MS-012AA compliant; footprint compatible with industry-standard SOIC-8 land patterns.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4, 5Drain (D)Internally paralleled pins - low-inductance, high-current path to heat sink via PCB copper
6Gate (G)Control terminal requiring <52 nC charge for full enhancement; sensitive to ESD
7, 8Source (S)Power return and reference node; connects to ground plane and provides Kelvin sensing path for current monitoring

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully with 3.3 V or 5 V control signals - eliminates need for gate drivers in low-voltage systems
Low RDS(on)0.009 Ω at 10 V ensures <1 W total conduction loss at 10 A, reducing thermal load in compact designs
Fast switching10 ns rise time and 47 ns fall time enable high-frequency (>1 MHz) operation with minimized dead-time losses
Robust body diode52 ns trr and 1.1 V VSD support efficient synchronous rectification without external Schottky diodes
Lead-free SO-8RoHS-compliant packaging with copper leadframe improves thermal conductivity over standard SO-8

Applications

Battery-Powered DC-DC ConvertersUSB-C Power Delivery Controllers

Use Scenario: Step-down conversion from single-cell Li-ion (3.0–4.2 V) to 1.8 V/3.3 V system rails in wearables and IoT sensors.

IC Role / Device Role: High-side synchronous rectifier in buck converter topology, driven directly by 3.3 V PWM controller.

Use Value: 0.009 Ω RDS(on) minimizes dropout and extends runtime; logic-level gate eliminates auxiliary bias supply.

Use Scenario: Output stage of programmable power supply IC managing 5–20 V output with up to 3 A current in USB-C PD sink applications.

IC Role / Device Role: Low-side switch controlling power path to load, synchronized with high-side FET via dedicated gate driver.

Use Value: 400 mJ avalanche rating protects against inductive kickback during hot-plug events; SO-8 thermal performance sustains 3 A continuous under 50°C ambient.

Motor Driver Half-Bridge StagesLED Backlight Dimming Circuits

Use Scenario: Low-voltage (≤12 V) brushed DC motor control in medical pumps and precision actuators requiring PWM speeds up to 20 kHz.

IC Role / Device Role: Low-side switch in half-bridge configuration, commutating current through motor winding with fast turn-off.

Use Value: 12 nC Qgd limits Miller-induced shoot-through risk; 52 ns trr prevents cross-conduction during polarity reversal.

Use Scenario: Constant-current dimming of multi-string white LEDs in automotive interior lighting and industrial displays.

IC Role / Device Role: PWM-controlled current sink regulating LED string current up to 2.5 A per channel.

Use Value: 0.013 Ω RDS(on) at 4.5 V gate drive ensures stable current regulation with minimal voltage headroom; SO-8 footprint simplifies layout in space-constrained modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLML6344TRPBFRDS(on) = 0.035 Ω @ 4.5 V; lower current rating (4.3 A); SOT-23 packageLower power density; limited to ≤5 W loads; unsuitable for >10 A peak currentsSelect only for ultra-compact, low-current (<5 A) designs where SO-8 footprint is prohibitive
DMN3025LSD-13RDS(on) = 0.025 Ω @ 4.5 V; dual-N in SO-8; higher Qg (22 nC)Enables half-bridge integration in same footprint but trades off switching speed for gate chargePrefer when board space is constrained and dual-FET topology aligns with system architecture

Compared with IRLML6344TRPBF and DMN3025LSD-13, SI4420DY delivers superior current handling (12.5 A) and lowest RDS(on) (0.009 Ω) among SO-8 logic-level N-ch devices, making it optimal for medium-power synchronous buck stages where thermal margin and conduction efficiency are critical.

Availability

SI4420DY is available at Aetrix Electronics and suitable for battery-powered DC-DC converters, USB-C power delivery subsystems, and motor driver half-bridge stages requiring stable component supply across production lifecycles.

Supply support for SI4420DY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SI4420DY belongs to Vishay's TrenchFET® Gen III logic-level MOSFET family, engineered specifically for high-efficiency, high-frequency DC-DC conversion in space- and thermally-constrained portable electronics.

FAQ

Is SI4420DY suitable for 3.3 V gate drive without a level shifter?

Yes. With a gate threshold voltage range of 1.0–2.5 V and guaranteed enhancement at VGS = 3.3 V, SI4420DY achieves full conduction (RDS(on) ≤ 0.013 Ω) using standard 3.3 V microcontroller or PMIC outputs - no external level shifting required.

What is the maximum safe operating frequency for SI4420DY in a buck converter?

Based on its 10 ns rise time, 47 ns fall time, and 52 nC total gate charge, SI4420DY supports stable operation up to 1.5 MHz in well-designed synchronous buck converters with appropriate gate drive strength (≥1 A peak) and PCB layout minimizing parasitic inductance.

Can SI4420DY replace SI4410DY in existing designs?

Yes, with validation. Both share identical SO-8 footprint and pinout, but SI4420DY offers 25% lower RDS(on) (0.009 Ω vs. 0.012 Ω) and higher current rating (12.5 A vs. 11.5 A). Thermal and gate drive margins improve, though layout review is recommended to confirm thermal relief adequacy.

Does SI4420DY require a heatsink in standard FR4 PCB mounting?

No external heatsink is required for ≤10 A continuous operation at ≤50°C ambient. Its SO-8 copper leadframe and 50 °C/W RθJA allow >800 mW dissipation on 1-in² 2-oz copper area. For sustained 12.5 A loads above 60°C ambient, additional copper pour or thermal vias are advised.

SI4420DY Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
PowerTrench®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
9mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
53 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2180 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

SI4420DY FAQ

1.How can I place an order for SI4420DY through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4420DY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4420DY reliable?

The price and inventory of SI4420DY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4420DY is usually 5 days.

3.What payment methods are accepted for SI4420DY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4420DY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4420DY?

SI4420DY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4420DY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4420DY?

For technical support, including SI4420DY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4420DY requirements.

6.How does Aetrix verify that SI4420DY is sourced from the original manufacturer or authorized distributors?

All SI4420DY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4420DY meets industry standards.

7.What is the process for return or replacement of SI4420DY?

All SI4420DY units undergo pre-shipment inspection (PSI). If there is an issue with SI4420DY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4420DY part is unused and in its original packaging.

Return procedure for SI4420DY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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