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NXP Semiconductors SI4420DY,518
- Part No.:
- SI4420DY,518
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4420DY,518.pdf
- Description:
- MOSFET N-CH 30V SOT96-1
- Quantity:
- Payment:
- Shipping:
Inventory:7,178
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Product details
Overview
SI4420DY,518 from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SO8 (SOT96-1) package, rated for 30 V VDS, 12.5 A continuous drain current at 25 °C, and 7.3 mΩ RDS(on) at VGS = 10 V. It serves as a high-efficiency synchronous rectifier or main switch in low-voltage DC–DC converters and battery protection circuits.
For engineers reviewing the SI4420DY,518 datasheet, SI4420DY,518 pinout, SI4420DY,518 application, or SI4420DY,518 equivalent, key selection criteria include its low on-resistance at 4.5 V gate drive (10.9 mΩ), fast switching with 12 ns turn-on delay and 64.5 nC total gate charge, and thermal resistance of 50 K/W junction-to-ambient on PCB.
Technical Context
This discrete MOSFET uses TrenchMOS™ technology to achieve low RDS(on) and high transconductance (15 S typical), enabling efficient operation in high-frequency switching topologies. Its gate threshold voltage (1.0 V min) supports logic-level drive compatibility with 3.3 V and 5 V controllers.
The device integrates a robust body diode with 2.3 A forward current rating and 60 ns reverse recovery time, suitable for freewheeling and synchronous rectification. Absolute maximum ratings include ±20 V VGS, 150 °C junction temperature, and 50 A peak drain current for short pulses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 12 V and 24 V system rails |
| ID (continuous) | 12.5 A at Tamb = 25 °C - Supports >10 W power stage output with standard PCB copper |
| RDS(on) | 7.3 mΩ max at VGS = 10 V - Enables <0.1 W conduction loss at 12 A |
| RDS(on) @ 4.5 V | 10.9 mΩ max - Ensures reliable turn-on with 3.3 V microcontroller GPIOs |
| Qg(tot) | 64.5 nC typical - Determines gate driver strength requirement for <100 ns switching transitions |
| td(off) | 60 ns typical - Critical for minimizing dead-time losses in half-bridge configurations |
| VGS(th) | 1.0 V min - Guarantees turn-on with low-voltage logic without level-shifting |
Pinout & Package
SI4420DY,518 is housed in the SOT96-1 (SO8) plastic small-outline package, measuring 5.0 × 4.0 mm with 1.27 mm lead pitch and gull-wing leads. The package supports surface-mount reflow assembly and provides adequate thermal dissipation via exposed drain pads (pins 5–8).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Common return path for load current; tied to ground or low-side reference in buck/half-bridge |
| 4 | Gate (G) | Control input requiring <65 nC charge; sensitive to ESD and ringing-requires local gate resistor |
| 5, 6, 7, 8 | Drain (D) | High-current output node; internally paralleled for low inductance and thermal spreading |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS™ structure | Enables 7.3 mΩ RDS(on) in SO8-reducing conduction loss by ~30% vs. planar MOSFETs at same die size |
| Low VGS(th) | 1.0 V minimum threshold ensures full enhancement with 3.3 V drivers, eliminating need for gate boosters |
| Fast switching | 12 ns td(on) and 50 ns tf support >1 MHz PWM operation with minimal switching loss |
| Integrated body diode | 60 ns trr and 0.7 V VSD enable use as synchronous rectifier without external Schottky |
| Thermal robustness | 150 °C max Tj and 50 K/W Rth(j-a) allow sustained 10 A operation on 2-layer 1 oz Cu PCB |
Applications
| DC–DC Converters | Lithium-ion Battery Protection |
|---|---|
Use Scenario: Step-down regulation in portable power supplies and PMICs. IC Role / Device Role / Timing Role: High-side or low-side synchronous switch in buck converter topology. Use Value: 7.3 mΩ RDS(on) minimizes I²R loss at 12 A, improving efficiency by ≥2% over comparable 10 mΩ devices. |
Use Scenario: Overcurrent and short-circuit protection in 2–4 cell Li-ion packs. IC Role / Device Role / Timing Role: Main discharge FET controlled by battery management IC. Use Value: 50 A peak drain rating withstands 10× surge currents during fault events without latch-up. |
| Notebook PC Power Rails | Portable Equipment Motor Control |
Use Scenario: Core voltage regulation (Vcore) and memory rail generation. IC Role / Device Role / Timing Role: Low-side switch in multiphase VRMs with 3.3 V gate drive. Use Value: 10.9 mΩ RDS(on) @ 4.5 V ensures stable 10 A delivery even under CPU transient loads. |
Use Scenario: H-bridge driver for small DC motors in handheld tools and medical devices. IC Role / Device Role / Timing Role: One quadrant switch in bidirectional motor control circuit. Use Value: Fast 60 ns td(off) enables precise PWM timing for smooth speed regulation below 1 kHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 8.5 mΩ @ 10 V; higher Qg = 72 nC; TO-252 package | Larger footprint and higher thermal resistance (62 K/W); less suitable for space-constrained portable designs | Prefer SI4420DY,518 when board area and 4.5 V drive compatibility are critical |
| DMN3025LSD-13 | RDS(on) = 2.5 mΩ @ 10 V but only 30 V rating; dual-N in SO8; higher cost | Designed for dual-switch configurations; not a single-device drop-in replacement | Choose SI4420DY,518 for cost-sensitive single-FET applications where 7.3 mΩ meets target efficiency |
Compared with IRF7470PBF and DMN3025LSD-13, SI4420DY,518 delivers optimal balance of low gate charge, 4.5 V drive capability, and SO8 thermal performance-making it preferred for compact, high-efficiency 12 V/24 V power stages where layout area and controller compatibility constrain alternatives.
Availability
SI4420DY,518 is available at Aetrix Electronics and suitable for DC–DC converters, lithium-ion battery protection circuits, and notebook PC power rails requiring stable component supply across industrial and consumer production programs.
Supply support for SI4420DY,518 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors, formerly Philips Semiconductors, is a global leader in high-performance analog and power semiconductors, with core expertise in automotive, industrial, and mobile power management solutions.
The SI4420DY,518 belongs to NXP's legacy TrenchMOS™ power MOSFET family, engineered specifically for high-efficiency, low-voltage switching in portable and battery-powered systems.
FAQ
What is the maximum continuous drain current for SI4420DY,518 at 70 °C ambient temperature?
The SI4420DY,518 supports 10 A continuous drain current at Tamb = 70 °C per its limiting values table. This derating reflects thermal constraints of the SO8 package on standard PCBs, where power dissipation drops from 2.5 W at 25 °C to 1.6 W at 70 °C. Designers must verify junction temperature using Rth(j-a) = 50 K/W and actual board layout.
Does SI4420DY,518 support logic-level gate drive from a 3.3 V microcontroller?
Yes, SI4420DY,518 has a guaranteed gate threshold voltage (VGS(th)) of 1.0 V minimum and delivers 10.9 mΩ RDS(on) at VGS = 4.5 V, making it fully compatible with 3.3 V GPIOs. However, full 12.5 A current capability requires VGS ≥ 10 V; for 3.3 V drive, design for ≤10.5 A to stay within the 4.5 V RDS(on) spec.
What is the safe operating area (SOA) limitation for SI4420DY,518 at 10 µs pulse width?
Per Figure 3 in the datasheet, the SI4420DY,518 supports up to 50 A peak drain current at VDS = 10 V for 10 µs pulses. At higher VDS, the allowable current decreases along the SOA curve-e.g., 20 A at 25 V. This pulsed rating enables robust short-circuit handling in battery protection applications without secondary fusing.
Can SI4420DY,518 be used as a synchronous rectifier in a 12 V output buck converter?
Yes, SI4420DY,518 is well-suited as a synchronous rectifier due to its low 7.3 mΩ RDS(on), fast 60 ns td(off), and integrated body diode with 60 ns trr. When paired with a proper gate driver synchronized to the high-side switch, it reduces conduction loss versus a Schottky diode-especially at >5 A loads-while maintaining clean commutation.
What is the thermal resistance junction-to-ambient for SI4420DY,518 on a standard PCB?
The SI4420DY,518 has a specified Rth(j-a) of 50 K/W when mounted on a printed circuit board with minimum footprint and t ≤ 10 s pulse duration. This value assumes standard JEDEC test conditions; actual performance improves with added copper pour or thermal vias under the drain pads, potentially reducing Rth(j-a) to ~35 K/W in optimized layouts.
SI4420DY,518 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 12.5A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 120 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
SI4420DY,518 FAQ
1.How can I place an order for SI4420DY,518 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4420DY,518 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4420DY,518 reliable?
The price and inventory of SI4420DY,518 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4420DY,518 is usually 5 days.
3.What payment methods are accepted for SI4420DY,518?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4420DY,518 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4420DY,518?
SI4420DY,518 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4420DY,518 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4420DY,518?
For technical support, including SI4420DY,518 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4420DY,518 requirements.
6.How does Aetrix verify that SI4420DY,518 is sourced from the original manufacturer or authorized distributors?
All SI4420DY,518 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4420DY,518 meets industry standards.
7.What is the process for return or replacement of SI4420DY,518?
All SI4420DY,518 units undergo pre-shipment inspection (PSI). If there is an issue with SI4420DY,518, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4420DY,518 part is unused and in its original packaging.
Return procedure for SI4420DY,518:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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