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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4472DY-T1-GE3

Name: SI4472DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4472DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4472DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4472DY-T1-GE3.pdf

Description:: MOSFET N-CH 150V 7.7A 8SO

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Product details

Overview

SI4472DY-T1-GE3 from Vishay Siliconix is an N-channel 150 V (D-S) MOSFET in SO-8 package, featuring R_DS(on) = 0.045 Ω at V_GS = 10 V, Q_g = 23 nC (typ.), and 100 % avalanche tested. It serves as a primary-side switch in offline SMPS and DC-DC converters requiring high-voltage blocking and low conduction loss.

For engineers reviewing the SI4472DY-T1-GE3 datasheet, SI4472DY-T1-GE3 pinout, SI4472DY-T1-GE3 application, or SI4472DY-T1-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance data (R_thJA = 40 °C/W max), SO-8 terminal mapping, and two validated alternative MOSFETs for high-voltage switching designs.

Technical Context

This MOSFET uses planar trench-gate silicon technology optimized for fast switching with minimized Q_gd to reduce turn-off losses. Its gate threshold voltage (V_GS(th)) ranges from 2.5 V to 4.5 V, enabling robust drive compatibility with standard 8–10 V gate drivers.

The device supports continuous drain current up to 7.7 A at T_C = 25 °C and withstands single-pulse avalanche energy of 20 mJ. Its body diode exhibits t_rr = 63–95 ns and Q_rr = 110–165 nC, suitable for hard-switched topologies where reverse recovery behavior impacts efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Supports primary-side switching in 110/230 VAC offline converters without derating.
R_DS(on)	0.045 Ω @ V_GS = 10 V - Delivers ≤ 1.7 W conduction loss at 6 A, reducing heatsink requirements.
Q_g	23 nC (typ.) @ V_GS = 8 V - Enables efficient gate driving with low-power controllers and minimizes switching loss.
I_D (cont.)	7.7 A @ T_C = 25 °C - Rated for sustained operation on FR4 PCB with 1" × 1" copper area.
R_thJA	40 °C/W (max) - Defines thermal limit for ambient-convection cooling; requires layout-aware pad design per AN826.
E_AS	20 mJ - Confirmed avalanche ruggedness allows safe operation under inductive switching stress.

Pinout & Package

SO-8 (JEDEC MS-012) surface-mount package with exposed drain paddle for enhanced thermal performance. Pin 1–8 arranged in dual-row configuration; pins 1, 2, 3, and 5 are source terminals; pins 4, 6, 7, and 8 are drain terminals; pin 3 is gate.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5	Source (S)	Four parallel source connections reduce bondwire inductance and improve current sharing in high-frequency switching.
4, 6, 7, 8	Drain (D)	Four drain terminals tied to internal die drain metallization and exposed paddle - critical for thermal path to PCB ground plane.
3	Gate (G)	Single gate input located between source pins - minimizes gate loop inductance when routed adjacent to source return.

Key Features

Feature	Design Value
Extremely low Q_gd	6.5 nC (typ.) - Reduces Miller plateau time and improves dV/dt immunity during turn-off transitions.
100 % R_g tested	Gate resistance 0.85–1.3 Ω - Ensures consistent switching speed and eliminates need for external gate resistor tuning.
100 % avalanche tested	IAS = 20 A, E_AS = 20 mJ - Guarantees ruggedness in flyback and LLC resonant converter primary switches.
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - Required for industrial and consumer products sold in EU/Asia markets.

Applications

Offline AC-DC Adapters	Industrial DC-DC Converters
Use Scenario: 65 W universal-input adapter with QR flyback topology operating at 65 kHz. IC Role / Device Role / Timing Role: Primary-side high-side switch synchronizing with controller's gate drive signal. Use Value: Low R_DS(on) and Q_g enable >89 % efficiency at full load while maintaining thermal margin on compact PCB.	Use Scenario: 200 W isolated half-bridge DC-DC module for PLC power supply. IC Role / Device Role / Timing Role: High-voltage leg switch handling 400 V bus with unidirectional current flow. Use Value: Avalanche rating ensures reliability during bus transients; SO-8 footprint simplifies layout vs. TO-220 alternatives.
Solar Microinverters	LED Driver Power Stages
Use Scenario: String-level microinverter with interleaved boost stage feeding H-bridge inverter. IC Role / Device Role / Timing Role: Boost switch operating at 100 kHz with 150 V blocking requirement. Use Value: Fast t_r/t_f (12–18 ns / 6–10 ns) and low C_iss (1735 pF) support high-frequency operation with minimal driver loss.	Use Scenario: 150 W constant-current LED driver using active PFC + LLC topology. IC Role / Device Role / Timing Role: PFC boost switch managing 400 V DC link with discontinuous conduction mode. Use Value: Body diode t_rr = 63 ns enables clean zero-current switching; halogen-free compliance meets lighting safety standards.

Offline AC-DC Adapters

Industrial DC-DC Converters

Use Scenario: 65 W universal-input adapter with QR flyback topology operating at 65 kHz.

IC Role / Device Role / Timing Role: Primary-side high-side switch synchronizing with controller's gate drive signal.

Use Value: Low R_DS(on) and Q_g enable >89 % efficiency at full load while maintaining thermal margin on compact PCB.

Use Scenario: 200 W isolated half-bridge DC-DC module for PLC power supply.

IC Role / Device Role / Timing Role: High-voltage leg switch handling 400 V bus with unidirectional current flow.

Use Value: Avalanche rating ensures reliability during bus transients; SO-8 footprint simplifies layout vs. TO-220 alternatives.

Solar Microinverters

LED Driver Power Stages

Use Scenario: String-level microinverter with interleaved boost stage feeding H-bridge inverter.

IC Role / Device Role / Timing Role: Boost switch operating at 100 kHz with 150 V blocking requirement.

Use Value: Fast t_r/t_f (12–18 ns / 6–10 ns) and low C_iss (1735 pF) support high-frequency operation with minimal driver loss.

Use Scenario: 150 W constant-current LED driver using active PFC + LLC topology.

IC Role / Device Role / Timing Role: PFC boost switch managing 400 V DC link with discontinuous conduction mode.

Use Value: Body diode t_rr = 63 ns enables clean zero-current switching; halogen-free compliance meets lighting safety standards.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF15	R_DS(on) = 0.15 Ω @ 10 V; V_DS = 150 V; TO-220 package	Higher conduction loss; requires heatsink; not surface-mountable	Select when board space allows through-hole mounting and thermal mass compensates for higher R_DS(on).
IRF640NPBF	R_DS(on) = 0.18 Ω @ 10 V; V_DS = 200 V; TO-220 package	Higher voltage rating but significantly higher on-resistance and Q_g = 67 nC	Choose only if 200 V rating is mandatory and switching frequency is below 50 kHz to manage gate drive loss.

Compared with STP16NF15 and IRF640NPBF, SI4472DY-T1-GE3 offers 3× lower R_DS(on), 2.9× lower Q_g, and SO-8 surface-mount compatibility - delivering superior power density and thermal performance in space-constrained, high-efficiency SMPS designs.

Availability

SI4472DY-T1-GE3 is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial DC-DC converters, and solar microinverter power stages requiring stable component supply and halogen-free compliance.

Supply support for SI4472DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and performance in harsh environments.

The Si4472DY product line targets high-voltage, medium-current switching applications in industrial and consumer power supplies, emphasizing low Q_gd, avalanche ruggedness, and surface-mount thermal efficiency.

FAQ

What is the maximum continuous drain current for SI4472DY-T1-GE3 at case temperature of 70 °C?

The maximum continuous drain current for SI4472DY-T1-GE3 is 6.1 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be validated against actual PCB layout and copper area per Vishay Application Note AN826. SI4472DY-T1-GE3 maintains safe operation within its 150 °C junction limit under these conditions.

Does SI4472DY-T1-GE3 have an integrated body diode, and what are its key characteristics?

Yes, SI4472DY-T1-GE3 includes an intrinsic body diode with V_SD = 0.77–1.2 V at I_S = 2.6 A and reverse recovery time t_rr = 63–95 ns at I_F = 5 A, dI/dt = 100 A/µs. These values are measured at T_J = 25 °C and define its suitability for hard-switched topologies. The body diode in SI4472DY-T1-GE3 supports freewheeling paths in flyback and forward converters without requiring external diodes.

Is SI4472DY-T1-GE3 pin-compatible with other SO-8 N-channel MOSFETs like Si4410DY?

No, SI4472DY-T1-GE3 is not pin-compatible with Si4410DY. While both use SO-8 packages, SI4472DY-T1-GE3 has four source pins (1,2,3,5), four drain pins (4,6,7,8), and one gate pin (3), whereas Si4410DY uses a different internal connection scheme. Layout reuse is not possible without verification of terminal mapping. SI4472DY-T1-GE3 pinout must be implemented per its official top-view diagram in Document 74283.

What is the gate threshold voltage range for SI4472DY-T1-GE3, and how does it affect drive circuit design?

The gate threshold voltage V_GS(th) for SI4472DY-T1-GE3 is 2.5–4.5 V at I_D = 250 µA. This range ensures reliable turn-on with standard 5 V logic-level drivers while maintaining noise immunity above 2 V. To achieve rated R_DS(on), gate drive must reach ≥8 V - SI4472DY-T1-GE3 is not a true logic-level MOSFET. Drive circuits must supply ≥10 V for optimal conduction loss.

How does the thermal resistance R_thJF of SI4472DY-T1-GE3 impact PCB layout decisions?

SI4472DY-T1-GE3 has R_thJF = 17–21 °C/W (steady-state), indicating low thermal resistance from junction to drain foot - which connects directly to the exposed paddle. Effective PCB layout must maximize copper area under the paddle (per AN826 recommended pads) and connect it to a solid ground plane. Failure to do so increases effective R_thJA beyond the 40 °C/W maximum, risking thermal runaway at rated current.

SI4472DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 7.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 45mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1735 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 5.9W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4472DY-T1-GE3 FAQ

1.How can I place an order for SI4472DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4472DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4472DY-T1-GE3 reliable?

The price and inventory of SI4472DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4472DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4472DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4472DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4472DY-T1-GE3?

SI4472DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4472DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4472DY-T1-GE3?

For technical support, including SI4472DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4472DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4472DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4472DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4472DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4472DY-T1-GE3?

All SI4472DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4472DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4472DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4472DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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