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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4632DY-T1-E3

Name: SI4632DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4632DY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4632DY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4632DY-T1-E3.pdf

Description:: MOSFET N-CH 25V 40A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SI4632DY-T1-E3 from Vishay Siliconix is an N-channel 25 V MOSFET in SO-8 package, optimized for low-side synchronous buck and POL synchronous rectifier applications. It delivers R_DS(on) = 2.7 mΩ at V_GS = 10 V, 36 A continuous drain current (T_C = 25 °C), 49 nC total gate charge, and 100 % R_g tested for consistent switching performance in high-efficiency DC/DC converters for notebooks and servers.

For engineers reviewing the SI4632DY-T1-E3 datasheet, SI4632DY-T1-E3 pinout, SI4632DY-T1-E3 application, or SI4632DY-T1-E3 equivalent, key selection criteria include its 25 V V_DS, ultra-low on-resistance at 4.5 V drive, body diode recovery characteristics (t_rr = 44–70 ns), thermal resistance (R_thJF = 13 °C/W), and RoHS/halogen-free compliance per IEC 61249-2-21.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low R_DS(on) and optimized Q_gd/Q_g ratio for fast, efficient switching in high-frequency synchronous rectification. Its gate threshold voltage (V_GS(th) = 1.2–2.6 V) ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers.

The device features fully characterized avalanche capability (E_AS = 45 mJ), 100 % UIS-tested ruggedness, and guaranteed C_iss/C_oss/C_rss parameters (up to 11.2 pF, 1.5 pF, 0.69 pF) enabling accurate loss modeling in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for 3.3 V/5 V input rail systems and point-of-load converters
R_DS(on) @ 10 V	2.7 mΩ - Enables <1 W conduction loss at 20 A in low-side switch position
R_DS(on) @ 4.5 V	3.3 mΩ - Supports direct drive from 3.3 V controllers without level-shifting
Q_g @ 10 V	161 nC - Determines gate driver power requirement and switching speed trade-off
t_rr (body diode)	44–70 ns - Critical for minimizing reverse recovery losses in synchronous rectifiers
R_thJF	13 °C/W - Low junction-to-foot thermal resistance enables direct PCB copper heatsinking
I_D (continuous, T_C = 25 °C)	40 A - Sustained current capability when mounted on thermally enhanced layout

Pinout & Package

SO-8 surface-mount package with exposed drain pad for thermal and electrical connection. Pin 1–8 arranged as G–D–S–D–S–D–G–D (top view); drain terminals are internally paralleled to minimize inductance and improve current sharing.

Pin/Terminal	Circuit Role	Design Meaning
1, 3, 5, 7	Gate	Control input; low capacitance (C_iss = 3.3–11.2 pF) reduces driver loading
2, 4, 6, 8	Drain	Main power output path; all four pins electrically tied to exposed thermal pad
Source (pins not assigned; internal connection)	Reference node	Connected to source metallization under die; accessible via PCB trace routing

Key Features

Feature	Design Value
Low Q_gd	11 nC - Reduces Miller-induced switching delay and improves dV/dt immunity
100 % R_g tested	1.3–2.0 Ω gate resistance - Ensures consistent turn-on/turn-off timing across production lots
UIS and capacitance tested	Guaranteed unclamped inductive switching robustness and parameter distribution control
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - Required for green electronics manufacturing

Applications

Notebook Power Delivery	Server VRM Low-Side Switch
Use Scenario: High-density 1–3 V output stage in ultrabook CPU/GPU core VRMs operating at 300–1000 kHz. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency. Use Value: 2.7 mΩ R_DS(on) cuts I²R loss by >60 % vs. typical 15 mΩ alternatives, enabling 95 %+ efficiency at 25 A load.	Use Scenario: Dual-phase 12 V input → 1.8 V output VRM in rack-mounted servers with tight thermal constraints. IC Role / Device Role / Timing Role: Continuous-conduction-mode (CCM) low-side switch handling up to 40 A per phase with forced-air cooling. Use Value: 13 °C/W R_thJF allows direct thermal coupling to inner-layer copper, reducing junction temperature rise by ~15 °C vs. standard SO-8.
POL Synchronous Rectifier	Workstation GPU Core Rail
Use Scenario: Point-of-load converter supplying 0.8–1.2 V to FPGA or ASIC with dynamic current steps up to 50 A/µs. IC Role / Device Role / Timing Role: Fast-turning low-side switch synchronized to high-side FET to eliminate body-diode conduction. Use Value: 49 nC Q_g at 4.5 V enables sub-100 ns turn-on with 1 Ω gate driver, minimizing dead-time losses.	Use Scenario: Multi-phase GPU core supply in professional workstations requiring transient response <1 µs and ripple <10 mV. IC Role / Device Role / Timing Role: Low-R_DS(on) channel in interleaved buck stages delivering peak currents >60 A. Use Value: Parallel drain pins and low C_rss (230–690 pF) suppress voltage spikes during high dI/dt transients, improving signal integrity.

Notebook Power Delivery

Server VRM Low-Side Switch

Use Scenario: High-density 1–3 V output stage in ultrabook CPU/GPU core VRMs operating at 300–1000 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency.

Use Value: 2.7 mΩ R_DS(on) cuts I²R loss by >60 % vs. typical 15 mΩ alternatives, enabling 95 %+ efficiency at 25 A load.

Use Scenario: Dual-phase 12 V input → 1.8 V output VRM in rack-mounted servers with tight thermal constraints.

IC Role / Device Role / Timing Role: Continuous-conduction-mode (CCM) low-side switch handling up to 40 A per phase with forced-air cooling.

Use Value: 13 °C/W R_thJF allows direct thermal coupling to inner-layer copper, reducing junction temperature rise by ~15 °C vs. standard SO-8.

POL Synchronous Rectifier

Workstation GPU Core Rail

Use Scenario: Point-of-load converter supplying 0.8–1.2 V to FPGA or ASIC with dynamic current steps up to 50 A/µs.

IC Role / Device Role / Timing Role: Fast-turning low-side switch synchronized to high-side FET to eliminate body-diode conduction.

Use Value: 49 nC Q_g at 4.5 V enables sub-100 ns turn-on with 1 Ω gate driver, minimizing dead-time losses.

Use Scenario: Multi-phase GPU core supply in professional workstations requiring transient response <1 µs and ripple <10 mV.

IC Role / Device Role / Timing Role: Low-R_DS(on) channel in interleaved buck stages delivering peak currents >60 A.

Use Value: Parallel drain pins and low C_rss (230–690 pF) suppress voltage spikes during high dI/dt transients, improving signal integrity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 25 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7478PBF	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 22 nC lower; SO-8 but no exposed drain pad	Higher R_thJA (62 °C/W vs. 29 °C/W typ.) limits power density in compact layouts	Prefer SI4632DY-T1-E3 where thermal management is critical; IRF7478PBF suits cost-sensitive, lower-current designs
DMN2020LSD-13	R_DS(on) = 2.8 mΩ @ 10 V; same SO-8 footprint; Q_g = 14.5 nC lower; no UIS rating published	Lacks avalanche energy spec (E_AS = 45 mJ for SI4632DY-T1-E3), limiting use in inductive switching	Select SI4632DY-T1-E3 for robustness-critical VRMs; DMN2020LSD-13 fits space-constrained, non-avalanche applications

Compared with IRF7478PBF and DMN2020LSD-13, SI4632DY-T1-E3 offers superior thermal performance via its exposed drain pad, guaranteed UIS ruggedness, and tighter Q_gd/Q_g ratio-making it optimal for high-reliability, high-power-density synchronous buck stages in computing infrastructure.

Availability

SI4632DY-T1-E3 is available at Aetrix Electronics and suitable for notebook power delivery, server VRM low-side switching, and POL synchronous rectifier applications requiring stable component supply, long-term lifecycle support, and lead-free/halogen-free compliance.

Supply support for SI4632DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si4632DY product line targets high-frequency, high-current DC/DC conversion in computing and communications infrastructure, designed specifically for low-R_DS(on), low-Q_g, and thermally optimized synchronous rectification.

FAQ

What is the maximum continuous drain current for SI4632DY-T1-E3 at 70 °C case temperature?

The SI4632DY-T1-E3 supports 32 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating due to thermal limitations and assumes proper PCB copper area and airflow. The SI4632DY-T1-E3 maintains its 2.7 mΩ R_DS(on) up to 125 °C junction temperature, ensuring stable conduction loss across its operating range.

Does SI4632DY-T1-E3 support 3.3 V gate drive in practical applications?

Yes, SI4632DY-T1-E3 is fully compatible with 3.3 V gate drive: its R_DS(on) is specified at 3.3 mΩ @ V_GS = 4.5 V and 15 A, and V_GS(th) ranges from 1.2 V to 2.6 V. In real-world 3.3 V logic-driven circuits, the SI4632DY-T1-E3 achieves near-optimal on-resistance with adequate overdrive margin, eliminating need for gate boosting.

What is the significance of the "100 % R_g tested" feature for SI4632DY-T1-E3?

The "100 % R_g tested" specification means every SI4632DY-T1-E3 unit undergoes production test for gate resistance (1.3–2.0 Ω), ensuring consistent switching timing and driver compatibility. This eliminates lot-to-lot variation in turn-on/turn-off delays, critical for multi-phase VRMs where timing skew between phases degrades efficiency and increases EMI-directly enhancing system-level reliability of the SI4632DY-T1-E3.

How does the body diode performance of SI4632DY-T1-E3 impact synchronous rectifier design?

The SI4632DY-T1-E3 body diode has t_rr = 44–70 ns and Q_rr = 42–65 nC at T_J = 25 °C, enabling clean commutation in synchronous rectifiers. Its low V_SD (0.75–1.1 V @ 3 A) minimizes forward conduction loss during dead time, while fast recovery reduces voltage overshoot and ringing-key for maintaining stability and efficiency in high-frequency (>500 kHz) SI4632DY-T1-E3-based converters.

Is SI4632DY-T1-E3 suitable for automotive applications?

No, SI4632DY-T1-E3 is not qualified for automotive applications. It operates from –55 °C to +150 °C but lacks AEC-Q101 qualification, PPAP documentation, and automotive-specific stress testing. Vishay positions the SI4632DY-T1-E3 for computing and industrial power supplies only; automotive-grade alternatives require explicit AEC-Q101 certification not present for this SI4632DY-T1-E3 variant.

SI4632DY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 161 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 11175 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta), 7.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4632DY-T1-E3 FAQ

1.How can I place an order for SI4632DY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4632DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4632DY-T1-E3 reliable?

The price and inventory of SI4632DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4632DY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4632DY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4632DY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4632DY-T1-E3?

SI4632DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4632DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4632DY-T1-E3?

For technical support, including SI4632DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4632DY-T1-E3 requirements.

6.How does Aetrix verify that SI4632DY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4632DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4632DY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4632DY-T1-E3?

All SI4632DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4632DY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4632DY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4632DY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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