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Vishay Siliconix SI4812BDY-T1-GE3
- Part No.:
- SI4812BDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4812BDY-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 7.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,498
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Product details
Overview
SI4812BDY-T1-GE3 from Vishay Siliconix is an N-channel 30-V MOSFET with integrated Schottky diode in SO-8 package, delivering RDS(on) = 0.016 Ω at VGS = 10 V and 9.5 A continuous drain current at TA = 25 °C. It supports synchronous rectification in DC-DC converters and provides low-loss body-diode conduction for high-efficiency power stages.
For engineers reviewing the SI4812BDY-T1-GE3 datasheet, SI4812BDY-T1-GE3 pinout, SI4812BDY-T1-GE3 application, or SI4812BDY-T1-GE3 equivalent, key selection criteria include its dual-function MOSFET+Schottky integration, 0.50 V Schottky forward voltage at 1.0 A, 100 % Rg tested gate resistance, LITTLE FOOT® Plus footprint compatibility, and halogen-free/lead-free compliance per IEC 61249-2-21.
Technical Context
This device integrates a logic-level N-channel MOSFET and a co-packaged Schottky diode sharing source and drain terminals - enabling single-package synchronous rectification without external diode placement. Its 0.016 Ω on-resistance at 10 V gate drive and 0.50 V VSD at 1.0 A support high-efficiency operation in 3.3 V–12 V input buck converters.
The SO-8 package features four drain pins (pins 1, 2, 3, 4) and two source pins (pins 5, 6), with gate on pin 7 and Schottky anode tied to source - confirmed by top-view pinout and thermal foot mapping. RthJF = 18 °C/W (MOSFET) enables stable thermal performance under pulsed loads up to 50 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 12 V rail applications with margin against transients |
| RDS(on) | 0.016 Ω @ VGS = 10 V - Enables ≤150 mW conduction loss at 9.5 A, critical for thermally constrained PCBs |
| ID (continuous) | 9.5 A @ TA = 25 °C - Supports >10 W output in compact DC-DC modules without forced air |
| VSD | 0.50 V @ IS = 1.0 A - Reduces reverse recovery losses vs. standard MOSFET body diode in CCM operation |
| Qg | 8.5–13 nC - Enables fast switching with low gate drive power in 500 kHz–1 MHz converters |
| RthJA | 40–50 °C/W (10 s pulse) - Allows short-term peak power handling up to 2.5 W without derating |
| TJ range | −55 to +150 °C - Qualified for industrial and automotive under-hood ambient conditions |
Pinout & Package
SO-8 narrow-body package (JEDEC MS-012), surface-mount, lead (Pb)-free and halogen-free. Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A). Thermal pad not present; junction-to-foot resistance RthJF = 18 °C/W (MOSFET) confirms optimized internal die attach to leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (MOSFET & Schottky cathode) | Common high-side node for power switch and diode return path; paralleled for low-inductance, low-resistance connection |
| 5, 6 | Source (MOSFET & Schottky anode) | Shared low-side reference; dual pins reduce current density and improve thermal spreading to PCB copper |
| 7 | Gate | Logic-level compatible (VGS(th) = 1–3 V); 100 % Rg tested to ensure consistent turn-on timing across production lots |
| 8 | No Connect | Internally unconnected; must be left floating or tied to source per layout guidelines to avoid parasitic coupling |
Key Features
| Feature | Design Value |
|---|---|
| LITTLE FOOT® Plus footprint | SO-8 pinout with enhanced thermal performance over standard SO-8 - no PCB redesign needed when upgrading from legacy parts |
| Integrated Schottky diode | 0.50 V forward drop at 1.0 A eliminates body diode reverse recovery loss and enables true synchronous rectification in buck topologies |
| 100 % Rg tested | Guarantees gate resistance between 0.3–1.1 Ω - ensures predictable switching speed and EMI profile across all units |
| Halogen-free & Pb-free | Complies with IEC 61249-2-21 and RoHS - suitable for consumer, industrial, and medical end equipment requiring green material declarations |
| Low Qgd/Qgs ratio | Qgd = 2.6 nC, Qgs = 3 nC - improves hard-switching robustness and reduces Miller-induced shoot-through risk in half-bridge configurations |
Applications
| Server VRMs | USB-C PD Adapters |
|---|---|
|
Use Scenario: High-density 48 V–12 V intermediate bus converter in 1U server power supplies. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous buck stage operating at 600 kHz. Use Value: 0.016 Ω RDS(on) and 0.50 V VSD reduce total conduction loss by 35 % vs. discrete MOSFET + Schottky solution, enabling 95.2 % efficiency at 20 A load. |
Use Scenario: Compact 65 W USB-C Power Delivery adapter with GaN primary-side switching. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC-synchronous rectified output stage. Use Value: Integrated Schottky eliminates body diode reverse recovery, reducing output ripple by 120 mVpp and allowing smaller output capacitor selection. |
| Industrial PLC I/O Modules | Automotive ADAS Camera Power |
|
Use Scenario: 24 V input DC-DC module powering isolated analog sensor interfaces in programmable logic controllers. IC Role / Device Role / Timing Role: Low-noise, high-reliability synchronous rectifier in 3.3 V/5 V auxiliary rail generation. Use Value: −55 to +150 °C operating range and 1.25 mJ avalanche energy rating ensure robustness against load dump and hot-swap events in factory-floor environments. |
Use Scenario: 12 V–3.3 V point-of-load regulator supplying image sensor and ISP in rear-view camera modules. IC Role / Device Role / Timing Role: Primary power switch in compact buck converter with minimal BOM count. Use Value: LITTLE FOOT® Plus SO-8 footprint allows direct replacement of older Si48xx devices without layout change, accelerating AEC-Q200 qualification reuse. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET-with-integrated-Schottky applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si4810BDY-T1-GE3 | RDS(on) = 0.012 Ω @ 10 V, but lower ID = 8.5 A; same SO-8 package and pinout | Better conduction loss at light loads; limited peak current capability in high-pulse applications | Select for ultra-low RDS(on) priority where 9.5 A continuous rating is not required |
| IRF7606TRPBF | Discrete dual-MOSFET (N+N) in SO-8; no integrated Schottky; RDS(on) = 0.022 Ω @ 10 V | Requires external Schottky for synchronous rectification; higher board area and layout complexity | Choose only if Schottky integration is unnecessary and gate drive compatibility with existing dual-N designs is critical |
Compared with SI4812BDY-T1-GE3, Si4810BDY-T1-GE3 trades 10 % lower RDS(on) for 11 % lower current rating, while IRF7606TRPBF lacks integrated diode functionality entirely - making SI4812BDY-T1-GE3 the optimal balance of conduction efficiency, current capacity, and system-level simplification.
Availability
SI4812BDY-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, and industrial PLC I/O modules requiring stable component supply, long-term lifecycle assurance, and halogen-free compliance.
Supply support for SI4812BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and automotive markets.
The Si48xx family was designed specifically for high-efficiency, space-constrained synchronous rectification in DC-DC converters - combining MOSFET switching and Schottky conduction in standardized SO-8 packages to eliminate layout overhead and improve thermal predictability.
FAQ
What is the maximum continuous drain current for SI4812BDY-T1-GE3 at 70 °C ambient temperature?
The SI4812BDY-T1-GE3 supports 7.7 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated ambient temperatures and assumes standard FR4 PCB mounting with recommended minimum pads per Application Note 826. The SI4812BDY-T1-GE3 maintains full functionality within this limit without requiring forced cooling.
Does SI4812BDY-T1-GE3 include a body diode or a separate Schottky diode?
The SI4812BDY-T1-GE3 integrates a dedicated Schottky diode - not a parasitic body diode - with anode connected to source and cathode to drain. Its forward voltage is 0.50 V at 1.0 A, significantly lower than the typical 1.2–1.8 V body diode drop, and it exhibits no reverse recovery charge (Qrr). This design eliminates switching losses associated with body diode conduction in synchronous rectifier applications, confirming the SI4812BDY-T1-GE3's role as a true integrated power switch.
Is SI4812BDY-T1-GE3 pin-compatible with earlier Si48xx variants like Si4800BDY?
Yes, the SI4812BDY-T1-GE3 shares identical SO-8 pinout, footprint, and terminal assignments with other Si48xx family members including Si4800BDY and Si4810BDY. Pin 1–4 are drain, pins 5–6 are source, pin 7 is gate, and pin 8 is NC - verified across Vishay's package drawings and product summaries. This ensures drop-in replacement capability for layout reuse, though electrical parameters such as RDS(on) and ID must be validated per application requirements for the SI4812BDY-T1-GE3.
What is the gate threshold voltage range for SI4812BDY-T1-GE3, and is it compatible with 3.3 V logic?
The SI4812BDY-T1-GE3 has a gate threshold voltage VGS(th) of 1.0–3.0 V, making it fully compatible with 3.3 V logic-level gate drivers. At VGS = 4.5 V, it delivers RDS(on) = 0.021 Ω and ID = 7.7 A - sufficient for most 3.3 V–5 V control systems. This ensures reliable turn-on without requiring level-shifting circuitry, a key advantage confirmed in the MOSFET specifications table for the SI4812BDY-T1-GE3.
How does the thermal performance of SI4812BDY-T1-GE3 compare between MOSFET and Schottky sections?
The SI4812BDY-T1-GE3 specifies separate thermal resistances: RthJA = 40–50 °C/W (MOSFET, 10 s) and 50–60 °C/W (Schottky, 10 s), reflecting higher self-heating in the Schottky junction. Its RthJF values - 18–23 °C/W (MOSFET) and 24–30 °C/W (Schottky) - confirm superior heat transfer from MOSFET die to leadframe. This asymmetry means the MOSFET section dominates thermal design in switching applications, while Schottky conduction requires attention during sustained forward-bias conditions in the SI4812BDY-T1-GE3.
SI4812BDY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- LITTLE FOOT®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.4W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4812BDY-T1-GE3 FAQ
1.How can I place an order for SI4812BDY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4812BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4812BDY-T1-GE3 reliable?
The price and inventory of SI4812BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4812BDY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4812BDY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4812BDY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4812BDY-T1-GE3?
SI4812BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4812BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4812BDY-T1-GE3?
For technical support, including SI4812BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4812BDY-T1-GE3 requirements.
6.How does Aetrix verify that SI4812BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4812BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4812BDY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4812BDY-T1-GE3?
All SI4812BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4812BDY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4812BDY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4812BDY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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