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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI5415EDU-T1-GE3

Name: SI5415EDU-T1-GE3
Brand: Vishay Siliconix
SKU: SI5415EDU-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI5415EDU-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® ChipFET™ Single

Datasheet:: SI5415EDU-T1-GE3.pdf

Description:: MOSFET P-CH 20V 25A PPAK

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Product details

Overview

SI5415EDU-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® Power MOSFET in a thermally enhanced PowerPAK® ChipFET package, rated for -20 V drain-source voltage, 0.0098 Ω R_DS(on) at -4.5 V gate drive, and -25 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency load switch in portable battery-powered systems.

For engineers reviewing the SI5415EDU-T1-GE3 datasheet, SI5415EDU-T1-GE3 pinout, SI5415EDU-T1-GE3 application, or SI5415EDU-T1-GE3 equivalent, key selection criteria include low R_DS(on) at logic-level gate drive, robust UIS rating, 100 % R_g and UIS tested qualification, and compatibility with compact mobile PCB layouts requiring minimal thermal footprint.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low on-resistance and fast switching in high-side or reverse-polarity protection configurations. Its gate threshold voltage of -0.4 V to -1.0 V enables reliable turn-on with standard 3.3 V or 4.5 V logic rails, while its 43 nC typical total gate charge (at V_GS = -4.5 V) balances switching loss and drive strength.

The device integrates a body diode with -0.8 V to -1.2 V forward voltage at -10 A and 35 ns typical reverse recovery time, supporting synchronous rectification and bidirectional current handling in power management ICs. Thermal resistance R_thJC is 3 °C/W (typ), enabling efficient heat transfer to the PCB copper plane in surface-mount applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for battery-switch and reverse-polarity protection circuits
R_DS(on)	0.0098 Ω (max) at V_GS = -4.5 V - Enables <10 mW conduction loss at 10 A, critical for portable device efficiency
I_D (cont)	-25 A at T_C = 25 °C - Supports high-current load switching without external heatsink in thermally optimized layouts
Q_g	43 nC (typ) at V_GS = -4.5 V - Low gate charge reduces driver power and enables use with low-power GPIOs
R_thJC	3 °C/W (typ) - Direct junction-to-case thermal path allows >20 W power dissipation with minimal case-to-PCB ΔT
V_GS(th)	-0.4 V to -1.0 V - Ensures guaranteed turn-on with 3.3 V logic, eliminating need for level-shifting circuitry
E_AS	11 mJ - Robust avalanche energy rating supports inductive load switching without snubbers

Pinout & Package

SI5415EDU-T1-GE3 uses the leadless PowerPAK® ChipFET single-package (3.00 mm × 1.90 mm × 0.75 mm), with exposed drain pads on the bottom side for thermal and electrical performance. The top-side marking "LA" identifies the part.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 6, 7, 8	Drain (D)	Five parallel drain terminals connected to internal die and bottom-side thermal pad - provides low-inductance, high-current path and primary heat conduction path to PCB
3, 4	Source (S)	Two dedicated source terminals - minimize source inductance in high-speed switching and improve current sharing
5	Gate (G)	Single gate input - designed for logic-level drive; requires no external gate resistor for most portable load-switch applications

Key Features

Feature	Design Value
TrenchFET® process	Enables ultra-low R_DS(on) at -4.5 V gate drive, reducing conduction losses by >30 % vs. planar P-channel alternatives
100 % R_g and UIS tested	Guarantees gate robustness and unclamped inductive switching reliability across full production lot - eliminates field failure risk in motor or solenoid drive
5500 V HBM ESD rating	Provides system-level ESD immunity during board assembly and end-user handling without additional protection components
Thermally enhanced PowerPAK ChipFET	Bottom-side exposed drain pad delivers 3× lower R_thJC than comparable SO-8, enabling 2× higher power density in space-constrained designs
Lead (Pb)-free and Halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709C - compliant for global consumer electronics manufacturing

Applications

Smartphone Battery Protection	Tablet PC Load Switching
Use Scenario: Reverse-polarity and overcurrent protection between Li-ion battery pack and main PMIC rail. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as active battery disconnect switch with fast fault response. Use Value: 0.0098 Ω R_DS(on) limits voltage drop to <100 mV at 10 A, preserving battery runtime and enabling accurate fuel gauging.	Use Scenario: Controlled power-up sequencing for display backlight and USB-C port controller subsystems. IC Role / Device Role / Timing Role: Logic-level load switch enabling precise enable timing and inrush current limiting via gate slew control. Use Value: 43 nC Q_g allows clean 1–5 ms turn-on with 10 kΩ pull-up, eliminating need for dedicated gate drivers.
Mobile SSD Power Gating	Wearable Health Monitor Power Management
Use Scenario: Standby power isolation for NVMe storage modules to meet <100 μA system sleep current targets. IC Role / Device Role / Timing Role: Low-leakage P-channel switch placed between battery and SSD VDD rail. Use Value: -1 μA I_DSS at -20 V ensures <1 μA standby leakage per switch, critical for multi-week battery life in always-on storage.	Use Scenario: Dynamic power domain control for optical heart-rate sensor and Bluetooth LE radio. IC Role / Device Role / Timing Role: Fast-turning load switch synchronized with MCU wake events to minimize active-time overhead. Use Value: 30 ns t_d(on) and 45 ns t_r at -4.5 V enable sub-100 ns power rail activation, reducing sensor acquisition latency.

Smartphone Battery Protection

Tablet PC Load Switching

Use Scenario: Reverse-polarity and overcurrent protection between Li-ion battery pack and main PMIC rail.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as active battery disconnect switch with fast fault response.

Use Value: 0.0098 Ω R_DS(on) limits voltage drop to <100 mV at 10 A, preserving battery runtime and enabling accurate fuel gauging.

Use Scenario: Controlled power-up sequencing for display backlight and USB-C port controller subsystems.

IC Role / Device Role / Timing Role: Logic-level load switch enabling precise enable timing and inrush current limiting via gate slew control.

Use Value: 43 nC Q_g allows clean 1–5 ms turn-on with 10 kΩ pull-up, eliminating need for dedicated gate drivers.

Mobile SSD Power Gating

Wearable Health Monitor Power Management

Use Scenario: Standby power isolation for NVMe storage modules to meet <100 μA system sleep current targets.

IC Role / Device Role / Timing Role: Low-leakage P-channel switch placed between battery and SSD VDD rail.

Use Value: -1 μA I_DSS at -20 V ensures <1 μA standby leakage per switch, critical for multi-week battery life in always-on storage.

Use Scenario: Dynamic power domain control for optical heart-rate sensor and Bluetooth LE radio.

IC Role / Device Role / Timing Role: Fast-turning load switch synchronized with MCU wake events to minimize active-time overhead.

Use Value: 30 ns t_d(on) and 45 ns t_r at -4.5 V enable sub-100 ns power rail activation, reducing sensor acquisition latency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 0.012 Ω at -4.5 V; larger PowerPAK 1212-8 package (3.2 × 3.2 mm); 55 nC Q_g	Higher thermal mass suits higher ambient temperature industrial modules; less suitable for ultra-thin smartphone bezels	Choose when board layout allows larger footprint and higher steady-state power (>3.5 W) is required
DMG2305UVT-7	R_DS(on) = 0.045 Ω at -4.5 V; SOT-23 package; 6.5 nC Q_g; lower current rating (-4.2 A)	Optimized for low-cost, low-power wearables where size trumps efficiency; not rated for >5 A loads	Choose only for sub-3 A applications where PCB area is severely constrained and efficiency loss is acceptable

Compared with Si7157DP-T1-GE3, SI5415EDU-T1-GE3 offers 18 % lower R_DS(on) and 22 % smaller footprint, making it superior for thin mobile devices; versus DMG2305UVT-7, SI5415EDU-T1-GE3 delivers 4.5× higher current capacity and 2.3× lower conduction loss, justifying its use in mid-to-high power portable subsystems.

Availability

SI5415EDU-T1-GE3 is available at Aetrix Electronics and suitable for smartphone battery protection, tablet PC load switching, and mobile SSD power gating requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for SI5415EDU-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SI54xx family is engineered for high-efficiency, logic-level P-channel switching in space- and thermally-constrained portable electronics, with emphasis on low R_DS(on), robust UIS, and halogen-free compliance.

FAQ

What is the maximum continuous drain current rating for SI5415EDU-T1-GE3 at 70 °C case temperature?

The SI5415EDU-T1-GE3 supports -25 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal vias per Vishay Application Note 826, and reflects derating from the 31 W P_D limit at T_C = 25 °C using the 3 °C/W typical R_thJC.

Does SI5415EDU-T1-GE3 require a gate driver IC for operation from a 3.3 V microcontroller GPIO?

No, SI5415EDU-T1-GE3 does not require an external gate driver when driven from a 3.3 V GPIO. Its V_GS(th) range of -0.4 V to -1.0 V ensures full enhancement at -3.3 V, and its 43 nC Q_g can be charged within safe slew rates using a 10 kΩ series resistor - verified in Vishay's typical gate charge curves and load-switch reference designs.

What is the thermal resistance from junction to ambient (R_thJA) for SI5415EDU-T1-GE3 on a standard 1" × 1" FR4 board?

Per the datasheet (S13-0789-Rev. A, page 1), the maximum R_thJA for SI5415EDU-T1-GE3 mounted on a 1" × 1" FR4 board is 40 °C/W under t ≤ 5 s conditions. The typical value is 34 °C/W. This value assumes recommended minimum pad layout per Application Note 826 and excludes forced airflow or heatsinking.

Is SI5415EDU-T1-GE3 suitable for reverse-voltage protection in a 5 V USB-powered system?

Yes, SI5415EDU-T1-GE3 is suitable for reverse-voltage protection in 5 V USB systems. With its -20 V V_DS rating and -0.8 V to -1.2 V body diode forward voltage, it blocks reverse current while adding only ~100 mV dropout at 2 A - significantly lower than Schottky-based solutions - and withstands transient overvoltage events up to -20 V without breakdown.

What does the "GE3" suffix indicate in SI5415EDU-T1-GE3?

The "GE3" suffix in SI5415EDU-T1-GE3 denotes Vishay's standard tape-and-reel packaging for surface-mount devices: "G" indicates Pb-free (lead-free) termination, "E3" specifies halogen-free construction per JEDEC JS709C, and "T1" designates 1 kW reel quantity. This matches the ordering row description "Lead (Pb)-free and Halogen-free".

SI5415EDU-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® ChipFET™ Single

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 9.8mOhm @ 10A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 4300 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 31W (Tc)

Operating Temperature:: -50°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® ChipFet Single

SI5415EDU-T1-GE3 FAQ

1.How can I place an order for SI5415EDU-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI5415EDU-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI5415EDU-T1-GE3 reliable?

The price and inventory of SI5415EDU-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5415EDU-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI5415EDU-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5415EDU-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI5415EDU-T1-GE3?

SI5415EDU-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI5415EDU-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI5415EDU-T1-GE3?

For technical support, including SI5415EDU-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5415EDU-T1-GE3 requirements.

6.How does Aetrix verify that SI5415EDU-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI5415EDU-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5415EDU-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI5415EDU-T1-GE3?

All SI5415EDU-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5415EDU-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI5415EDU-T1-GE3 part is unused and in its original packaging.

Return procedure for SI5415EDU-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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