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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI5458DU-T1-GE3

Name: SI5458DU-T1-GE3
Brand: Vishay Siliconix
SKU: SI5458DU-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI5458DU-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® ChipFET™ Single

Datasheet:: SI5458DU-T1-GE3.pdf

Description:: MOSFET N-CH 30V 6A CHIPFET

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Product details

Overview

SI5458DU-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® power MOSFET in a PowerPAK® ChipFET® package, delivering R_DS(on) = 0.041 Ω at V_GS = 10 V and 0.051 Ω at V_GS = 4.5 V, with 6 A continuous drain current and 2.8 nC typical total gate charge - optimized for high-efficiency load switching in space-constrained DC/DC converters.

For engineers reviewing the SI5458DU-T1-GE3 datasheet, SI5458DU-T1-GE3 pinout, SI5458DU-T1-GE3 application, or SI5458DU-T1-GE3 equivalent, key selection criteria include its low gate charge for fast switching, thermally enhanced bottom-side copper exposure, and verified performance under TJ = 150 °C steady-state conditions in compact 3.0 × 1.9 mm footprint designs.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and high transconductance (g_fs = 15 S typ.), enabling efficient operation in synchronous rectification and load-switching topologies. Its gate threshold voltage (V_GS(th) = 1.2–3.0 V) supports direct drive from 3.3 V and 5 V logic controllers without level shifting.

The device features a robust body diode with t_rr = 11–20 ns and Q_rr = 4–8 nC, suitable for freewheeling in buck converters. Thermal design is enabled by R_thJC = 10–12 °C/W (junction-to-case) and R_thJA = 30–36 °C/W (junction-to-ambient, t ≤ 5 s), validated on 1" × 1" FR4 board per JEDEC JESD51-7.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines safe operating range in 24 V rail applications.
R_DS(on) @ 10 V	0.041 Ω max - Enables <150 mW conduction loss at 6 A, critical for thermal management in sealed enclosures.
R_DS(on) @ 4.5 V	0.051 Ω max - Ensures full enhancement from standard 3.3 V/5 V microcontroller GPIOs without gate drivers.
Q_g typ.	2.8 nC - Reduces switching energy loss and EMI in high-frequency (>1 MHz) DC/DC stages.
I_D cont. (T_J = 150 °C)	6 A - Continuous current rating under worst-case junction temperature; sets PCB copper area requirements.
C_iss	325 pF typ. - Input capacitance directly impacts gate drive strength needed for <20 ns rise/fall times.
V_GS(th)	1.2–3.0 V - Threshold range ensures reliable turn-on across temperature and process variation.

Pinout & Package

SI5458DU-T1-GE3 uses the leadless PowerPAK® ChipFET® package (3.0 mm × 1.9 mm × 0.75 mm), with exposed drain copper on the bottom side for enhanced thermal conduction to the PCB. The top-side marking "AP" identifies the device variant.

Pin/Terminal	Circuit Role	Design Meaning
D (1,2,3,6,7,8)	Drain	Multi-terminal drain connection tied to bottom-side thermal pad; primary current path and heat sink interface.
G (4)	Gate	Single gate input; low R_g (0.6–5.6 Ω) enables stable high-speed switching with minimal ringing.
S (5)	Source	Source reference node; connects to ground plane or low-side switch node in half-bridge configurations.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × area efficiency for 30 V class, reducing board area by >30% vs. SO-8 equivalents.
100 % R_g tested	Guarantees gate resistance between 0.6–5.6 Ω, ensuring consistent switching timing and driver compatibility.
Exposed drain thermal pad	Enables direct thermal coupling to inner-layer copper planes; achieves R_thJC = 10 °C/W without heatsinks.
Low Q_gd/Q_gs ratio	Q_gd = 0.8 nC, Q_gs = 1.1 nC - Minimizes Miller effect, supporting clean hard-switching up to 2 MHz.
Body diode t_rr	11–20 ns - Fast recovery reduces reverse recovery loss and voltage overshoot in synchronous rectifier mode.

Applications

Hard Disk Drive DC/DC Converter	USB-C Load Switch
Use Scenario: Step-down regulation from 5 V or 12 V bus to 3.3 V/1.8 V logic rails inside HDD controller boards. IC Role / Device Role / Timing Role: Low-side synchronous rectifier and main power switch in buck converter stage. Use Value: 0.051 Ω R_DS(on) at 4.5 V gate drive eliminates need for external gate driver, simplifying layout and reducing BOM count.	Use Scenario: Inrush current limiting and hot-swap protection for USB-C power delivery paths up to 3 A. IC Role / Device Role / Timing Role: Single N-channel load switch controlled by system PMIC enable signal. Use Value: 6 A rating and 2.8 nC Q_g support fast, low-loss turn-on (<20 ns) while maintaining <100 mΩ on-resistance over temperature.
Industrial Sensor Node Power Rail	Portable Medical Device Battery Protection
Use Scenario: Isolated 3.3 V supply switching for ultra-low-power sensor ICs in factory automation nodes. IC Role / Device Role / Timing Role: High-side or low-side power gate enabling/disabling entire subsystems during sleep cycles. Use Value: Sub-1 μA I_DSS at 30 V and -55 °C to +150 °C operating range ensure long-term reliability in unattended deployments.	Use Scenario: Secondary overcurrent protection between Li-ion battery pack and charging circuitry in handheld diagnostics tools. IC Role / Device Role / Timing Role: Reverse-polarity and short-circuit protected power switch in battery management path. Use Value: Robust body diode (V_SD = 0.8–1.2 V) and 20 A pulsed current capability handle transient fault currents without latch-up.

Hard Disk Drive DC/DC Converter

USB-C Load Switch

Use Scenario: Step-down regulation from 5 V or 12 V bus to 3.3 V/1.8 V logic rails inside HDD controller boards.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier and main power switch in buck converter stage.

Use Value: 0.051 Ω R_DS(on) at 4.5 V gate drive eliminates need for external gate driver, simplifying layout and reducing BOM count.

Use Scenario: Inrush current limiting and hot-swap protection for USB-C power delivery paths up to 3 A.

IC Role / Device Role / Timing Role: Single N-channel load switch controlled by system PMIC enable signal.

Use Value: 6 A rating and 2.8 nC Q_g support fast, low-loss turn-on (<20 ns) while maintaining <100 mΩ on-resistance over temperature.

Industrial Sensor Node Power Rail

Portable Medical Device Battery Protection

Use Scenario: Isolated 3.3 V supply switching for ultra-low-power sensor ICs in factory automation nodes.

IC Role / Device Role / Timing Role: High-side or low-side power gate enabling/disabling entire subsystems during sleep cycles.

Use Value: Sub-1 μA I_DSS at 30 V and -55 °C to +150 °C operating range ensure long-term reliability in unattended deployments.

Use Scenario: Secondary overcurrent protection between Li-ion battery pack and charging circuitry in handheld diagnostics tools.

IC Role / Device Role / Timing Role: Reverse-polarity and short-circuit protected power switch in battery management path.

Use Value: Robust body diode (V_SD = 0.8–1.2 V) and 20 A pulsed current capability handle transient fault currents without latch-up.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 0.035 Ω @ 10 V, but larger 3.3 × 3.3 mm PowerPAK 1212-8 package; higher Q_g = 4.5 nC.	Better thermal margin at high ambient, but requires larger PCB area and slower switching.	Select when thermal derating above 70 °C dominates layout constraints over switching speed.
DMN3025LFG-7	Same 3.0 × 1.9 mm footprint, but R_DS(on) = 0.032 Ω @ 10 V and 0.045 Ω @ 4.5 V; Q_g = 3.1 nC.	Marginally lower conduction loss, but no 100 % R_g test; body diode t_rr not specified.	Choose when lowest possible R_DS(on) is prioritized and gate drive stability is managed externally.

Compared with Si7157DP-T1-GE3 and DMN3025LFG-7, SI5458DU-T1-GE3 offers optimal balance of compact size, guaranteed gate resistance, and fast switching for space-limited 3.3 V–5 V control environments - making it preferred for portable and high-density industrial modules where layout area and driver simplicity are critical.

Availability

SI5458DU-T1-GE3 is available at Aetrix Electronics and suitable for hard disk drive DC/DC converters, USB-C load switches, and industrial sensor node power rails requiring stable component supply, full traceability, and lifecycle continuity.

Supply support for SI5458DU-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI5458DU-T1-GE3 belongs to Vishay's PowerPAK ChipFET® family, engineered specifically for high-current, low-voltage load switching in space-constrained computing, storage, and portable electronics.

FAQ

What is the maximum continuous drain current for SI5458DU-T1-GE3 at 70 °C case temperature?

The SI5458DU-T1-GE3 supports 6 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is limited by package thermal resistance (R_thJC = 10–12 °C/W) and junction temperature cap of 150 °C, and applies under steady-state conditions with adequate PCB copper area.

Does SI5458DU-T1-GE3 require a gate resistor for stable switching?

SI5458DU-T1-GE3 benefits from an external gate resistor (typically 1–10 Ω) to dampen ringing and control dV/dt, especially in high-frequency buck converters. Its tested R_g of 0.6–5.6 Ω provides predictable gate drive impedance, but external tuning remains necessary for EMI-sensitive applications.

Can SI5458DU-T1-GE3 be used in high-side switch configurations?

Yes, SI5458DU-T1-GE3 can operate as a high-side switch when paired with a gate driver capable of providing V_GS ≥ 4.5 V relative to the source node. Its V_GS rating of ±20 V and 30 V V_DS support bootstrap or isolated gate drive schemes in 24 V systems.

What is the thermal resistance from junction to ambient for SI5458DU-T1-GE3 on a standard PCB?

On a 1" × 1" FR4 board (per JEDEC JESD51-7), SI5458DU-T1-GE3 has R_thJA = 30–36 °C/W for t ≤ 5 s. Under steady-state conditions, this rises to 72 °C/W - confirming the need for thermal vias and inner-layer copper to sustain 6 A continuous current without exceeding 150 °C junction temperature.

Is SI5458DU-T1-GE3 compliant with lead-free and halogen-free standards?

Yes, SI5458DU-T1-GE3 is lead (Pb)-free and halogen-free, as confirmed in the Ordering Information section and material categorization note. It meets RoHS Directive 2011/65/EU and Vishay's internal halogen-free definition per document 99912.

SI5458DU-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® ChipFET™ Single

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 41mOhm @ 7.1A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 325 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta), 10.4W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® ChipFET™ Single

SI5458DU-T1-GE3 FAQ

1.How can I place an order for SI5458DU-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI5458DU-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI5458DU-T1-GE3 reliable?

The price and inventory of SI5458DU-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5458DU-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI5458DU-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5458DU-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI5458DU-T1-GE3?

SI5458DU-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI5458DU-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI5458DU-T1-GE3?

For technical support, including SI5458DU-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5458DU-T1-GE3 requirements.

6.How does Aetrix verify that SI5458DU-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI5458DU-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5458DU-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI5458DU-T1-GE3?

All SI5458DU-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5458DU-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI5458DU-T1-GE3 part is unused and in its original packaging.

Return procedure for SI5458DU-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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