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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI5499DC-T1-GE3

Name: SI5499DC-T1-GE3
Brand: Vishay Siliconix
SKU: SI5499DC-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI5499DC-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SMD, Flat Leads

Datasheet:: SI5499DC-T1-GE3.pdf

Description:: MOSFET P-CH 8V 6A 1206-8 CHIPFET

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Product details

Overview

SI5499DC-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET optimized for low-voltage load switching in portable electronics, featuring -8 V V_DS, 0.036 Ω R_DS(on) at -4.5 V V_GS, and guaranteed operation down to -1.5 V V_GS. It delivers -6 A continuous drain current at T_C = 25 °C in a ChipFET® package and supports battery-powered systems requiring ultra-low gate drive and minimal conduction loss.

For engineers reviewing the SI5499DC-T1-GE3 datasheet, SI5499DC-T1-GE3 pinout, SI5499DC-T1-GE3 application, or SI5499DC-T1-GE3 equivalent, this page provides verified device identity, validated thermal and switching parameters, confirmed ChipFET® package mapping, and real-world load-switching use cases - all derived from Vishay Document #73321 (Rev. C).

Technical Context

This P-channel MOSFET uses trench-gate silicon technology to achieve stable threshold voltage (-0.35 to -0.8 V) and low on-resistance across temperature. Its R_DS(on) remains below 0.077 Ω even at V_GS = -1.5 V, enabling direct control from single-cell Li-ion or alkaline supplies without level shifting.

Thermal design is supported by a maximum R_thJA of 50 °C/W (T_A = 25 °C) and R_thJF of 20 °C/W, with safe operating area limited by package power dissipation (2.5 W at T_A = 25 °C). The body diode exhibits V_SD = -0.7 to -1.2 V at -2.1 A and t_rr = 45–70 ns.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-8 V - Maximum drain-source blocking voltage; defines system-level rail compatibility up to 8 V negative supply.
R_DS(on) @ V_GS = -4.5 V	0.036 Ω - Enables <180 mW conduction loss at -5.1 A, critical for thermally constrained PCB layouts.
R_DS(on) @ V_GS = -1.5 V	0.077 Ω - Guarantees functional switching from single 1.5 V alkaline or 2.0 V LiFePO₄ cells.
Q_g @ V_GS = -4.5 V	14 nC - Low gate charge reduces driver power and enables fast turn-on (<15 ns td(on)) with minimal gate resistance.
T_J Range	-55 to +150 °C - Supports industrial and extended-temperature portable designs without derating at ambient extremes.
Package	ChipFET® (1206-8) - Leadless surface-mount footprint with exposed drain pads for thermal relief and high-current routing.

Pinout & Package

SI5499DC-T1-GE3 is housed in the Vishay ChipFET® package (1206-8), a leadless, bottom-terminal SMD format with three terminals: Drain (D), Source (S), and Gate (G). The package features dual exposed drain pads for enhanced thermal conduction and current handling.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main current path input (high-side switch node)	Connected to system input rail; dual exposed copper pads provide low-inductance, high-current return path and thermal sinking.
S (Source)	Main current path output (load connection)	Reference node for gate drive; tied to load ground or regulated output; determines V_GS polarity and switching logic.
G (Gate)	Control terminal for channel conduction	Accepts negative V_GS relative to source; requires no level shifter when driven from 1.5–4.5 V logic referenced to source.

Key Features

Feature	Design Value
1.5-V-rated gate threshold	Guaranteed turn-on at V_GS ≤ -1.5 V ensures reliable switching from primary batteries and low-dropout regulators without auxiliary bias rails.
Halogen-free & Pb-free construction	Complies with IEC 61249-2-21 and RoHS; eliminates halogenated flame retardants while maintaining thermal and mechanical reliability.
Ultra-low R_DS(on) at low V_GS	0.056 Ω at -1.8 V V_GS minimizes voltage drop and self-heating in always-on or high-duty-cycle load switches.
Optimized body diode performance	V_SD = -0.7 to -1.2 V and t_rr = 45–70 ns support synchronous rectification and reverse-current protection in bidirectional paths.

Applications

Smartphone Power Management	USB OTG Power Switch
Use Scenario: Isolating main battery from USB VBUS during host mode to prevent backfeed and meet USB-IF compliance. IC Role / Device Role / Timing Role: High-side load switch controlling VBUS path; operates as a controlled series FET with fast turn-off to suppress fault currents. Use Value: Enables <1 µA quiescent current in off-state and <77 mΩ on-resistance at -1.5 V gate drive, extending standby time and reducing thermal stress.	Use Scenario: Enabling/disabling 5 V power delivery from embedded USB host controller to peripheral devices. IC Role / Device Role / Timing Role: Load switch placed between VBUS and downstream port; driven directly by 1.8 V GPIO to eliminate level-shifter ICs. Use Value: Eliminates external gate driver due to -1.5 V V_GS(th) specification, reducing BOM count and PCB area in space-constrained OTG implementations.
Wireless Headset Battery Protection	Medical Sensor Node Power Gating
Use Scenario: Disconnecting lithium-polymer battery from charging circuitry and audio codec during deep sleep to minimize leakage. IC Role / Device Role / Timing Role: Low-leakage high-side switch isolating battery anode; activated only during active charging or playback. Use Value: Achieves <1 µA IDSS at -8 V and -55 to +150 °C operation, ensuring long-term shelf life and reliability in wearable form factors.	Use Scenario: Powering down analog front-end and BLE radio between sensor acquisition intervals in battery-operated diagnostic patches. IC Role / Device Role / Timing Role: Precision load switch enabling microsecond-scale power cycling; coordinated with MCU wake-up timer. Use Value: Delivers <15 ns turn-on delay and <45 ns fall time at -4.5 V drive, supporting sub-millisecond power state transitions without voltage droop.

Smartphone Power Management

USB OTG Power Switch

Use Scenario: Isolating main battery from USB VBUS during host mode to prevent backfeed and meet USB-IF compliance.

IC Role / Device Role / Timing Role: High-side load switch controlling VBUS path; operates as a controlled series FET with fast turn-off to suppress fault currents.

Use Value: Enables <1 µA quiescent current in off-state and <77 mΩ on-resistance at -1.5 V gate drive, extending standby time and reducing thermal stress.

Use Scenario: Enabling/disabling 5 V power delivery from embedded USB host controller to peripheral devices.

IC Role / Device Role / Timing Role: Load switch placed between VBUS and downstream port; driven directly by 1.8 V GPIO to eliminate level-shifter ICs.

Use Value: Eliminates external gate driver due to -1.5 V V_GS(th) specification, reducing BOM count and PCB area in space-constrained OTG implementations.

Wireless Headset Battery Protection

Medical Sensor Node Power Gating

Use Scenario: Disconnecting lithium-polymer battery from charging circuitry and audio codec during deep sleep to minimize leakage.

IC Role / Device Role / Timing Role: Low-leakage high-side switch isolating battery anode; activated only during active charging or playback.

Use Value: Achieves <1 µA IDSS at -8 V and -55 to +150 °C operation, ensuring long-term shelf life and reliability in wearable form factors.

Use Scenario: Powering down analog front-end and BLE radio between sensor acquisition intervals in battery-operated diagnostic patches.

IC Role / Device Role / Timing Role: Precision load switch enabling microsecond-scale power cycling; coordinated with MCU wake-up timer.

Use Value: Delivers <15 ns turn-on delay and <45 ns fall time at -4.5 V drive, supporting sub-millisecond power state transitions without voltage droop.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si5403DC-T1-GE3	-20 V V_DS, 0.022 Ω R_DS(on) @ -4.5 V, but higher V_GS(th) (-0.5 to -1.2 V); not rated for V_GS = -1.5 V operation.	Better for 3.3 V–5 V systems; unsuitable for 1.5 V–2.0 V battery direct drive.	Select only if system V_GS ≥ -2.5 V and higher blocking voltage is required.
DMN2041LFG-7	-20 V V_DS, 0.045 Ω R_DS(on) @ -4.5 V, 0.075 Ω @ -1.8 V; no guaranteed -1.5 V operation; different 1206-8 footprint alignment.	Compatible with standard 1206 land pattern but lacks -1.5 V V_GS validation and halogen-free certification.	Consider only if halogen-free compliance is not mandatory and gate drive is ≥ -1.8 V.

Compared with Si5403DC-T1-GE3 and DMN2041LFG-7, SI5499DC-T1-GE3 uniquely guarantees functional operation at -1.5 V V_GS with halogen-free construction, making it the only validated choice for direct single-cell alkaline or LiFePO₄ load switching where gate drive voltage is strictly limited.

Availability

SI5499DC-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, USB OTG power switching, and medical sensor node power gating requiring stable component supply, full halogen-free compliance, and guaranteed low-voltage gate drive capability.

Supply support for SI5499DC-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on efficiency, miniaturization, and reliability.

The SI5499DC-T1-GE3 belongs to Vishay's TrenchFET® P-channel load switch family, engineered specifically for battery-powered portable devices demanding ultra-low gate drive, minimal on-resistance at low V_GS, and robust thermal performance in compact ChipFET® packages.

FAQ

What is the minimum gate-source voltage required to fully turn on SI5499DC-T1-GE3?

The SI5499DC-T1-GE3 is specified to operate down to V_GS = -1.5 V, with R_DS(on) = 0.077 Ω at that voltage. Its gate threshold voltage V_GS(th) ranges from -0.35 V to -0.8 V, meaning it begins conducting significantly below -1.5 V. However, full enhancement and guaranteed low on-resistance require at least -1.5 V, as validated in Vishay Document #73321.

Does SI5499DC-T1-GE3 support hot-swap or inrush current limiting?

The SI5499DC-T1-GE3 does not integrate internal slew-rate control or current-limiting circuitry. Inrush management must be implemented externally using gate resistors or RC networks. Its fast turn-on delay (≤15 ns) and low Q_g (14 nC) allow precise external timing control, but designers must add series gate resistance to limit dV/dt and peak inrush in high-capacitance loads.

Is SI5499DC-T1-GE3 compatible with reflow soldering per IPC-J-STD-020?

Yes - SI5499DC-T1-GE3 is qualified for lead-free reflow per IPC-J-STD-020, with a peak soldering temperature of 260 °C (per Vishay Doc #73321). The ChipFET® package is designed for standard IR or vapor-phase reflow profiles; manual soldering with iron is not recommended due to its leadless construction and exposed copper terminations.

What is the thermal resistance from junction to foot (R_thJF) for SI5499DC-T1-GE3?

The maximum R_thJF (junction-to-foot) for SI5499DC-T1-GE3 is 20 °C/W under steady-state conditions, with a typical value of 17 °C/W. This parameter reflects heat transfer from the silicon die to the exposed drain pad, enabling effective thermal coupling to PCB copper planes - critical for managing power dissipation in compact portable layouts.

Can SI5499DC-T1-GE3 replace an N-channel MOSFET in high-side switching applications?

Yes - SI5499DC-T1-GE3 is a P-channel device inherently suited for high-side switching without requiring a charge pump or bootstrap circuit. Unlike N-channel alternatives, it simplifies design by accepting gate drive referenced to source (i.e., V_GS negative), eliminating complexity in low-voltage battery systems where generating a boosted gate voltage is impractical.

SI5499DC-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 8 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 36mOhm @ 5.1A, 4.5V

Vgs(th) (Max) @ Id:: 800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 8 V

Vgs (Max):: ±5V

Input Capacitance (Ciss) (Max) @ Vds:: 1290 pF @ 4 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 6.2W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 1206-8 ChipFET™

SI5499DC-T1-GE3 FAQ

1.How can I place an order for SI5499DC-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI5499DC-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI5499DC-T1-GE3 reliable?

The price and inventory of SI5499DC-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5499DC-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI5499DC-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5499DC-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI5499DC-T1-GE3?

SI5499DC-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI5499DC-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI5499DC-T1-GE3?

For technical support, including SI5499DC-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5499DC-T1-GE3 requirements.

6.How does Aetrix verify that SI5499DC-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI5499DC-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5499DC-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI5499DC-T1-GE3?

All SI5499DC-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5499DC-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI5499DC-T1-GE3 part is unused and in its original packaging.

Return procedure for SI5499DC-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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