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Vishay Siliconix SI5504BDC-T1-GE3

Name: SI5504BDC-T1-GE3
Brand: Vishay Siliconix
SKU: SI5504BDC-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI5504BDC-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FET, MOSFET Arrays

Package:: 8-SMD, Flat Leads

Datasheet:: SI5504BDC-T1-GE3.pdf

Description:: MOSFET N/P-CH 30V 4A/3.7A 1206-8

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Product details

Overview

SI5504BDC-T1-GE3 from Vishay Siliconix is a dual-channel, lead-free and halogen-free 1206-8 ChipFET® package N- and P-channel 30 V MOSFET pair. It delivers 4 A continuous drain current (N-ch) and −3.7 A (P-ch) at T_C = 25 °C, with R_DS(on) of 0.065 Ω @ V_GS = 10 V (N-ch) and 0.140 Ω @ V_GS = −10 V (P-ch), enabling compact DC/DC conversion and bidirectional load switching in portable power rails.

For engineers reviewing the SI5504BDC-T1-GE3 datasheet, SI5504BDC-T1-GE3 pinout, SI5504BDC-T1-GE3 application, or SI5504BDC-T1-GE3 equivalent, this dual-channel trench MOSFET supports space-constrained, low-voltage load switch and synchronous buck converter topologies requiring matched complementary channel performance, thermal efficiency on FR4 PCBs, and RoHS-compliant assembly.

Technical Context

The SI5504BDC-T1-GE3 integrates independent N- and P-channel TrenchFET® MOSFETs in a single 1206-8 ChipFET® package, sharing no internal connection between channels. Each channel features fully specified gate threshold voltage (V_GS(th) = 1.5–3.0 V for N-ch; −1.5 to −3.0 V for P-ch), body diode recovery time (t_rr = 30 ns N-ch, 20 ns P-ch), and dynamic parameters including Q_g = 4.5 nC (N-ch) and 4.5 nC (P-ch) at ±10 V drive.

Thermal design is enabled by junction-to-foot (R_thJF) of 33 °C/W (typ.) per channel and junction-to-ambient (R_thJA) of 70 °C/W (typ.) on a 1" × 1" FR4 board. The leadless construction exposes bare copper at drain terminals, optimized for bottom-side solder interconnection without requiring solder fillets at terminal tips.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V (N-ch), −30 V (P-ch): Supports 24 V rail switching and 30 V abs max input in portable DC/DC stages.
R_DS(on)	0.065 Ω @ V_GS = 10 V (N-ch); 0.140 Ω @ V_GS = −10 V (P-ch): Enables <150 mW conduction loss at 4 A load.
I_D (continuous)	4 A (N-ch), −3.7 A (P-ch) at T_C = 25 °C: Sustains full-rated load in thermally managed PCB layouts.
Q_g	4.5 nC (N-ch), 4.5 nC (P-ch) @ ±10 V: Allows fast switching with low gate drive power in 1–2 MHz converters.
t_r/t_f	12–20 ns rise/fall (N-ch), 10–15 ns (P-ch) @ 10 V drive: Supports high-frequency synchronous rectification with minimal overlap loss.
V_SD	0.8–1.2 V (N-ch), −0.8 to −1.2 V (P-ch) @ I_S = 2.6 A / −2 A: Limits reverse conduction loss during dead-time in half-bridge configurations.
R_thJA	70 °C/W (typ.) on 1" × 1" FR4: Enables ~1.5 W steady-state dissipation before reaching 150 °C junction limit.

Pinout & Package

The SI5504BDC-T1-GE3 uses the 1206-8 ChipFET® package (3.05 mm × 1.90 mm × 0.42 mm), a leadless surface-mount dual-channel outline compatible with standard 1206 passive footprints but engineered for power semiconductor thermal performance. Drain terminals are exposed copper on the bottom side; no plating is applied post-singulation.

Pin/Terminal	Circuit Role	Design Meaning
1 (S1)	N-channel source	Primary return path for N-ch current; connects directly to PCB ground plane for low-inductance layout.
2 (G1)	N-channel gate	Control input for N-ch; requires ≥1.5 V to turn on, ≤3 V threshold ensures TTL/CMOS compatibility.
3 (S2)	P-channel source	High-side reference node for P-ch; tied to V_IN in high-side switch configurations.
4 (G2)	P-channel gate	Inverted control input for P-ch; driven low to enable conduction; threshold −1.5 to −3.0 V.
5, 6 (D1)	N-channel drain	Parallel-connected drain terminals; both must be soldered to maximize thermal conduction and current capacity.
7, 8 (D2)	P-channel drain	Parallel-connected drain terminals; shared thermal path to PCB copper enhances power handling.

Key Features

Feature	Design Value
TrenchFET® process	Enables ultra-low R_DS(on) in miniature 1206-8 footprint-0.065 Ω N-ch at 10 V drive without SO-8 area penalty.
Dual-channel complementary pairing	Matched V_GS(th) and dynamic timing (t_d(on), t_r) across N/P channels simplifies gate driver design for synchronous buck or H-bridge.
Junction-to-foot thermal resistance	33 °C/W typical per channel: Matches SO-8 thermal performance while occupying only 20% of its board area.
Lead-free and halogen-free construction	Meets IPC/JEDEC J-STD-020D reflow profile and IEC 61249-2-21 compliance for green electronics manufacturing.
Body diode recovery	t_rr = 30 ns (N-ch), 20 ns (P-ch): Reduces switching loss and EMI in hard-switched topologies versus standard MOSFETs.

Applications

USB Power Delivery Switching	Portable Device Load Switch
Use Scenario: Bidirectional 5–20 V USB PD power path management in smartphones and tablets, where input and output rails require controlled sequencing and reverse-current blocking. IC Role / Device Role / Timing Role: SI5504BDC-T1-GE3 acts as complementary high- and low-side switches controlling VBUS routing and isolation between Type-C ports and battery charging ICs. Use Value: Low R_DS(on) minimizes voltage drop across 3 A load paths; matched N/P thresholds ensure precise dead-time control and prevent shoot-through during state transitions.	Use Scenario: Independent ON/OFF control of subsystems (e.g., display backlight, camera module, audio codec) in wearables and handhelds to reduce standby leakage. IC Role / Device Role / Timing Role: SI5504BDC-T1-GE3 serves as dual independent load switches-one N-ch for low-side sinking, one P-ch for high-side sourcing-with separate gate enables. Use Value: 0.140 Ω P-ch R_DS(on) limits dropout to <530 mV at 3.7 A, preserving system voltage margin; integrated body diodes support back-powering during hot-plug events.
Synchronous Buck Converter Topology	Industrial Sensor Node Power Sequencing
Use Scenario: 12 V input to 3.3 V/1.8 V point-of-load regulation in compact IoT edge nodes, where efficiency and thermal density are critical. IC Role / Device Role / Timing Role: SI5504BDC-T1-GE3 implements the high-side (P-ch) and low-side (N-ch) power switches in a discrete synchronous buck stage driven by external controller. Use Value: 4.5 nC total gate charge per channel reduces driver losses; 30 ns body diode recovery cuts cross-conduction loss by >30% vs. standard MOSFETs at 1 MHz operation.	Use Scenario: Controlled power-up/down sequencing of mixed-voltage sensor subsystems (e.g., 5 V analog front-end, 3.3 V digital logic, 1.2 V ADC core) in factory automation modules. IC Role / Device Role / Timing Role: SI5504BDC-T1-GE3 provides isolated, sequenced enable paths-N-ch for ground-referenced loads, P-ch for supply-referenced rails-with independent gate timing. Use Value: Guaranteed V_GS(th) range (±1.5 to ±3.0 V) ensures reliable turn-on with standard GPIOs; 150 °C max junction rating supports extended operation in sealed enclosures.

USB Power Delivery Switching

Portable Device Load Switch

Use Scenario: Bidirectional 5–20 V USB PD power path management in smartphones and tablets, where input and output rails require controlled sequencing and reverse-current blocking.

IC Role / Device Role / Timing Role: SI5504BDC-T1-GE3 acts as complementary high- and low-side switches controlling VBUS routing and isolation between Type-C ports and battery charging ICs.

Use Value: Low R_DS(on) minimizes voltage drop across 3 A load paths; matched N/P thresholds ensure precise dead-time control and prevent shoot-through during state transitions.

Use Scenario: Independent ON/OFF control of subsystems (e.g., display backlight, camera module, audio codec) in wearables and handhelds to reduce standby leakage.

IC Role / Device Role / Timing Role: SI5504BDC-T1-GE3 serves as dual independent load switches-one N-ch for low-side sinking, one P-ch for high-side sourcing-with separate gate enables.

Use Value: 0.140 Ω P-ch R_DS(on) limits dropout to <530 mV at 3.7 A, preserving system voltage margin; integrated body diodes support back-powering during hot-plug events.

Synchronous Buck Converter Topology

Industrial Sensor Node Power Sequencing

Use Scenario: 12 V input to 3.3 V/1.8 V point-of-load regulation in compact IoT edge nodes, where efficiency and thermal density are critical.

IC Role / Device Role / Timing Role: SI5504BDC-T1-GE3 implements the high-side (P-ch) and low-side (N-ch) power switches in a discrete synchronous buck stage driven by external controller.

Use Value: 4.5 nC total gate charge per channel reduces driver losses; 30 ns body diode recovery cuts cross-conduction loss by >30% vs. standard MOSFETs at 1 MHz operation.

Use Scenario: Controlled power-up/down sequencing of mixed-voltage sensor subsystems (e.g., 5 V analog front-end, 3.3 V digital logic, 1.2 V ADC core) in factory automation modules.

IC Role / Device Role / Timing Role: SI5504BDC-T1-GE3 provides isolated, sequenced enable paths-N-ch for ground-referenced loads, P-ch for supply-referenced rails-with independent gate timing.

Use Value: Guaranteed V_GS(th) range (±1.5 to ±3.0 V) ensures reliable turn-on with standard GPIOs; 150 °C max junction rating supports extended operation in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel complementary MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	Same 1206-8 package; N-ch R_DS(on) = 0.022 Ω @ 10 V, P-ch = 0.045 Ω @ −10 V - lower on-resistance but higher Q_g (12.5 nC).	Better for high-current, low-loss apps (>5 A); less suitable for high-frequency switching due to larger gate charge.	Select Si7157DP-T1-GE3 when conduction loss dominates; choose SI5504BDC-T1-GE3 when gate drive power or switching speed is prioritized.
DMN3028LSD-13	SO-8 package; N-ch R_DS(on) = 0.028 Ω, P-ch = 0.045 Ω @ 10 V; higher thermal mass but larger footprint (5.0 × 6.0 mm).	Preferred for high-power industrial designs where PCB area is available and heatsinking is enhanced via clip or thermal pad.	Choose DMN3028LSD-13 for >2 W continuous dissipation; SI5504BDC-T1-GE3 remains optimal for space-constrained portable designs.

Compared with Si7157DP-T1-GE3 and DMN3028LSD-13, the SI5504BDC-T1-GE3 offers balanced trade-offs: moderate R_DS(on) and low Q_g in the smallest possible footprint, making it uniquely suited for thermally constrained, high-frequency portable power stages where board area is at a premium.

Availability

SI5504BDC-T1-GE3 is available at Aetrix Electronics and suitable for portable DC/DC conversion, bidirectional load switching, and synchronous buck regulator applications requiring stable component supply, RoHS-compliant assembly, and consistent thermal performance across production batches.

Supply support for SI5504BDC-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI5504BDC-T1-GE3 belongs to Vishay's ChipFET® family-engineered to deliver SO-8-level power handling in 1206 passive footprints for space-critical portable and battery-powered systems.

FAQ

What is the maximum continuous drain current rating for each channel of the SI5504BDC-T1-GE3?

The SI5504BDC-T1-GE3 supports 4 A continuous drain current for the N-channel device and −3.7 A for the P-channel device at case temperature T_C = 25 °C. Derating applies above 25 °C: at T_C = 85 °C, ratings reduce to 3.8 A (N-ch) and −2.7 A (P-ch). These values assume proper PCB copper area and thermal management per Vishay AN812 guidelines.

Does the SI5504BDC-T1-GE3 require special rework or soldering processes due to its leadless ChipFET® package?

Yes-the SI5504BDC-T1-GE3 uses a leadless 1206-8 ChipFET® package with exposed copper drain terminals. Manual soldering with an iron is not recommended. Reflow soldering per JEDEC J-STD-020D is required, and rework must use precision hot-air tools with profile control to avoid delamination or thermal stress on the die attach. No solder fillet is required at drain tips.

Can the N-channel and P-channel sections of the SI5504BDC-T1-GE3 be used independently in different circuits on the same PCB?

Yes-the SI5504BDC-T1-GE3 contains two electrically isolated MOSFETs sharing only mechanical packaging. The N-channel (pins 1, 2, 5, 6) and P-channel (pins 3, 4, 7, 8) have no internal connection. They may be used in separate functions-for example, N-ch as a low-side switch and P-ch as a high-side load switch-with independent gate drive and power domain assignments.

What is the body diode forward voltage specification for the SI5504BDC-T1-GE3 under typical operating conditions?

The SI5504BDC-T1-GE3 specifies V_SD = 0.8–1.2 V for the N-channel body diode and −0.8 to −1.2 V for the P-channel body diode, measured at I_S = 2.6 A (N-ch) or −2 A (P-ch) with V_GS = 0 V and T_J = 25 °C. These values remain stable across −55 °C to 125 °C junction temperature per typical characterization curves.

How does the thermal performance of the SI5504BDC-T1-GE3 compare to standard SO-8 MOSFETs?

The SI5504BDC-T1-GE3 achieves R_thJA = 70 °C/W (typ.) on a 1" × 1" FR4 board-identical to many SO-8 MOSFETs-despite occupying only 20% of the board area. Its R_thJF = 33 °C/W (typ.) matches SO-8 performance by leveraging short internal leads and direct drain-to-PCB copper conduction, enabling SO-8-equivalent power handling in ultra-compact layouts.

SI5504BDC-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 4A, 3.7A

Rds On (Max) @ Id, Vgs:: 65mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 220pF @ 15V

Power - Max:: 3.12W, 3.1W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 1206-8 ChipFET™

SI5504BDC-T1-GE3 FAQ

1.How can I place an order for SI5504BDC-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI5504BDC-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI5504BDC-T1-GE3 reliable?

The price and inventory of SI5504BDC-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI5504BDC-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI5504BDC-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI5504BDC-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI5504BDC-T1-GE3?

SI5504BDC-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI5504BDC-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI5504BDC-T1-GE3?

For technical support, including SI5504BDC-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI5504BDC-T1-GE3 requirements.

6.How does Aetrix verify that SI5504BDC-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI5504BDC-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI5504BDC-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI5504BDC-T1-GE3?

All SI5504BDC-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI5504BDC-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI5504BDC-T1-GE3 part is unused and in its original packaging.

Return procedure for SI5504BDC-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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