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Vishay Siliconix SI7102DN-T1-E3
- Part No.:
- SI7102DN-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7102DN-T1-E3.pdf
- Description:
- MOSFET N-CH 12V 35A PPAK 1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:8,961
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Product details
Overview
SI7102DN-T1-E3 from Vishay Siliconix is an N-channel 12-V TrenchFET® Power MOSFET in PowerPAK® 1212-8 package, delivering 35 A continuous drain current at TC = 25 °C, RDS(on) of 3.8 mΩ at VGS = 4.5 V, and 41 nC total gate charge - optimized for secondary synchronous rectification and high-efficiency point-of-load DC/DC converters.
For engineers reviewing the SI7102DN-T1-E3 datasheet, SI7102DN-T1-E3 pinout, SI7102DN-T1-E3 application, or SI7102DN-T1-E3 equivalent, key selection criteria include its ultra-low thermal resistance (RthJC = 1.9 °C/W), lead-free halogen-free construction, 1.07 mm profile, and 100 % Rg tested gate performance under high-current switching conditions.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with minimal gate charge. Its PowerPAK 1212-8 package exposes the drain pad on the bottom side for direct thermal conduction to the PCB, enabling junction-to-case thermal resistance as low as 1.9 °C/W.
The device features a gate-source threshold voltage range of 0.4–1.0 V at 250 µA, body diode forward voltage of 0.61–1.2 V at IS = 3.2 A, and reverse recovery time of 46–70 ns - supporting high-frequency synchronous rectification with low conduction and switching losses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 12 V - maximum drain-source blocking voltage, suitable for 12 V input rails and synchronous buck output stages |
| RDS(on) | 3.8 mΩ at VGS = 4.5 V, ID = 15 A - enables <1 W conduction loss at 30 A, critical for high-current POL efficiency |
| ID (continuous) | 35 A at TC = 25 °C - package-limited current handling, supported by low RthJC for thermal management |
| Qg | 41 nC at VGS = 4.5 V - low gate drive energy requirement, reducing driver loss and enabling faster turn-on |
| RthJC | 1.9 °C/W (typical) - enables efficient heat transfer from die to PCB copper, minimizing junction temperature rise |
| VGS(th) | 0.4–1.0 V - ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level gate drivers |
| Body diode trr | 46–70 ns - supports high-frequency synchronous rectification without excessive reverse recovery loss |
Pinout & Package
PowerPAK® 1212-8 is a surface-mount, leadless, 8-terminal package with exposed drain pad on the bottom side. Dimensions: 3.30 mm × 3.30 mm × 1.07 mm. The package uses copper-clip construction for low-inductance, high-current paths and optimized thermal path from die to PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications |
| 5, 6, 7, 8 | Drain | Four parallel drain terminals connected to large bottom-side exposed copper pad for thermal and electrical conduction |
| Terminal 4 (top-side) | Gate | Single top-side gate terminal with low Rg (1.4–2.1 Ω) for stable, low-noise switching control |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 3.8 mΩ RDS(on) at 4.5 V drive while maintaining robust avalanche rating and gate oxide reliability |
| PowerPAK 1212-8 package | Delivers 1.9 °C/W RthJC - over 20× better thermal performance than TSSOP-8 and ~10× better than SO-8 |
| 100 % Rg tested | Guarantees gate resistance between 1.4–2.1 Ω, ensuring consistent switching timing and EMI behavior across production lots |
| Halogen-free & Pb-free | Complies with IEC 61249-2-21 and RoHS; compatible with lead-free reflow profiles up to 240 °C peak |
| Low-profile 1.07 mm height | Enables use in ultra-thin power modules and space-constrained mobile/embedded POL converters |
Applications
| Secondary Synchronous Rectification | Point-of-Load (POL) Converter |
|---|---|
Use Scenario: Used as the synchronous rectifier switch in the secondary side of isolated DC/DC converters (e.g., forward, LLC, or active clamp flyback). IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce conduction loss and improve efficiency at high load currents. Use Value: Achieves >95 % efficiency at 30 A output due to 3.8 mΩ RDS(on) and 46 ns body diode trr, minimizing reverse recovery loss. | Use Scenario: Integrated into compact, high-current buck regulators powering FPGAs, ASICs, or CPUs on mainboards or telecom cards. IC Role / Device Role / Timing Role: High-side or low-side power switch operating at 300–1000 kHz switching frequency. Use Value: Enables 35 A continuous operation with <2.5 °C/W total thermal resistance when mounted on 0.5 in² copper pour, sustaining full load without derating. |
| Load Switch | Hot-Swap / Inrush Control |
Use Scenario: Controls power delivery to peripheral modules (e.g., USB-C PD accessories, PCIe add-in cards) with soft-start and overcurrent protection. IC Role / Device Role / Timing Role: Low-side or high-side controlled pass element with integrated gate driver interface. Use Value: Low 0.4–1.0 V VGS(th) allows direct control from 3.3 V microcontrollers; 35 A rating supports hot-plug of 50 W loads. | Use Scenario: Implements inrush current limiting and fault isolation in redundant power supplies or server backplanes. IC Role / Device Role / Timing Role: High-side switch with external gate resistor and sense resistor for current monitoring. Use Value: Fast 27 ns td(on) and 12 ns tf enable precise timing control during startup; 60 A pulsed rating handles surge transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7101DN-T1-E3 | Same PowerPAK 1212-8 package, but 20 V VDS rating and higher RDS(on) (5.5 mΩ @ 4.5 V) | Better suited for 19 V input rails; less optimal for 12 V systems requiring lowest possible conduction loss | Select when higher VDS margin is needed and 12 V operation remains within safe SOA |
| DMN6016LFG-7 | Dual N-channel in SOT-23-6; 20 V VDS, 16 mΩ RDS(on); lower current (6 A), no exposed drain pad | Targeted at low-power, cost-sensitive applications; lacks thermal performance for >10 A loads | Choose only for sub-5 A loads where board space is constrained and thermal budget is relaxed |
Compared with SI7102DN-T1-E3, Si7101DN-T1-E3 offers higher voltage headroom but sacrifices conduction efficiency at 12 V, while DMN6016LFG-7 trades off current capability, thermal performance, and package size for integration density - making SI7102DN-T1-E3 the optimal choice for high-current, thermally demanding 12 V synchronous rectification and POL designs.
Availability
SI7102DN-T1-E3 is available at Aetrix Electronics and suitable for secondary synchronous rectification, point-of-load converters, and load-switch applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and telecom power systems.
Supply support for SI7102DN-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and thermal innovation.
The Si7102DN product line belongs to Vishay's TrenchFET® PowerPAK® family, engineered specifically for high-current, high-frequency DC/DC conversion where low RDS(on), fast switching, and superior thermal dissipation are critical.
FAQ
What is the maximum continuous drain current rating for SI7102DN-T1-E3 at 70 °C case temperature?
The SI7102DN-T1-E3 is rated for 35 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB thermal design with adequate copper area to maintain case temperature at or below 70 °C under steady-state operation. Derating applies above this temperature per the current derating curve in the datasheet.
Does SI7102DN-T1-E3 support 3.3 V gate drive in logic-level applications?
Yes, SI7102DN-T1-E3 supports 3.3 V gate drive: its gate-source threshold voltage (VGS(th)) ranges from 0.4 V to 1.0 V, and it achieves 3.8 mΩ RDS(on) at VGS = 4.5 V and 4.7 mΩ at VGS = 2.5 V. At 3.3 V, typical RDS(on) falls between these values (~4.2 mΩ), enabling full enhancement in logic-level synchronous rectifier and load-switch circuits without level-shifting.
What is the thermal resistance from junction to ambient (RthJA) for SI7102DN-T1-E3 on a standard FR4 board?
For SI7102DN-T1-E3 mounted on a 1" × 1" FR4 board, the typical junction-to-ambient thermal resistance (RthJA) is 24 °C/W, with a maximum of 33 °C/W. This value assumes standard JEDEC test conditions; actual RthJA improves significantly with added PCB copper area - e.g., dropping to ~15 °C/W with 0.5 in² of 2-oz copper connected to the exposed drain pad.
Is SI7102DN-T1-E3 suitable for synchronous rectification in LLC resonant converters?
Yes, SI7102DN-T1-E3 is well-suited for synchronous rectification in LLC resonant converters. Its 46–70 ns body diode reverse recovery time (trr), low Qgd (8.5 nC), and fast 12 ns fall time minimize switching loss and ringing during zero-voltage switching transitions. Combined with 3.8 mΩ RDS(on), it delivers high efficiency at high frequencies (300–700 kHz) typical of LLC topologies.
What reflow profile should be used for SI7102DN-T1-E3 during PCB assembly?
SI7102DN-T1-E3 requires a lead-free reflow profile with peak temperature of 240 °C (+5/−0 °C), time above 180 °C of 70–180 seconds, and time at peak temperature of 20–40 seconds. Ramp rates must not exceed ±6 °C/s. Full details are provided in Vishay document 73257; manual soldering with an iron is not recommended due to the leadless PowerPAK construction.
SI7102DN-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 3.8mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3720 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 52W (Tc)
- Operating Temperature:
- -50°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7102DN-T1-E3 FAQ
1.How can I place an order for SI7102DN-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7102DN-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7102DN-T1-E3 reliable?
The price and inventory of SI7102DN-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7102DN-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI7102DN-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7102DN-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7102DN-T1-E3?
SI7102DN-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7102DN-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7102DN-T1-E3?
For technical support, including SI7102DN-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7102DN-T1-E3 requirements.
6.How does Aetrix verify that SI7102DN-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI7102DN-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7102DN-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI7102DN-T1-E3?
All SI7102DN-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7102DN-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7102DN-T1-E3 part is unused and in its original packaging.
Return procedure for SI7102DN-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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