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Vishay Siliconix SI7102DN-T1-GE3
- Part No.:
- SI7102DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7102DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 12V 35A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,901
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Product details
Overview
SI7102DN-T1-GE3 from Vishay Siliconix is an N-channel 12-V (D-S) TrenchFET® Power MOSFET in a lead-free and halogen-free PowerPAK® 1212-8 package, delivering 35 A continuous drain current at TC = 25 °C, RDS(on) of 3.8 mΩ at VGS = 4.5 V, and 41 nC total gate charge - optimized for secondary synchronous rectification and high-efficiency point-of-load switching.
For engineers reviewing the SI7102DN-T1-GE3 datasheet, SI7102DN-T1-GE3 pinout, SI7102DN-T1-GE3 application, or SI7102DN-T1-GE3 equivalent, key selection criteria include its ultra-low RDS(on), 1.07 mm profile, 100 % Rg tested gate, junction-to-case thermal resistance of 1.9 °C/W, and compatibility with Pb-free reflow profiles up to 240 °C.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its PowerPAK 1212-8 package features an exposed copper drain pad for direct thermal conduction to the PCB, enabling junction-to-case thermal resistance as low as 1.9 °C/W and supporting high-current operation without external heatsinking.
The device exhibits gate threshold voltage (VGS(th)) of 0.4–1.0 V, body diode forward voltage (VSD) of 0.61–1.2 V at IS = 3.2 A, and reverse recovery time (trr) of 46–70 ns - characteristics critical for minimizing conduction and switching losses in synchronous buck converters and OR-ing applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 12 V - maximum drain-source blocking voltage, suitable for 12 V input rail and low-voltage DC-DC stages |
| RDS(on) | 3.8 mΩ at VGS = 4.5 V - enables <1 W conduction loss at 15 A, critical for high-efficiency POL converters |
| ID (continuous) | 35 A at TC = 25 °C - package-limited current handling, supported by low thermal resistance |
| Qg | 41 nC at VGS = 4.5 V - determines gate drive power and switching speed in high-frequency applications |
| RthJC | 1.9 °C/W - allows efficient heat transfer from die to PCB, reducing junction temperature rise under load |
| VGS(th) | 0.4–1.0 V - ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers |
| trr | 46–70 ns - minimizes body diode reverse recovery loss during hard-switching transitions |
Pinout & Package
SI7102DN-T1-GE3 is housed in a PowerPAK® 1212-8 surface-mount package (3.30 mm × 3.30 mm × 1.07 mm), featuring an exposed drain pad on the bottom side for thermal and electrical connection. The package has no leads; terminals are soldered directly to PCB pads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–3, 5–8 | Drain (D) | Eight parallel drain terminals connected to the large exposed copper pad - provides low-inductance, high-current path and primary thermal conduction path to PCB |
| 4 | Gate (G) | Single gate input terminal - requires low-impedance drive due to 41 nC Qg; layout must minimize loop inductance |
| 5–8 (shared) | Source (S) | Four source terminals tied internally - forms return path for channel current and body diode conduction; connects to power ground plane |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 3.8 mΩ RDS(on) at 4.5 V gate drive, reducing conduction loss by >30 % vs. planar MOSFETs in same package |
| PowerPAK 1212-8 package | Delivers 1.9 °C/W RthJC - over 10× better thermal performance than TSSOP-8, enabling higher current density in space-constrained designs |
| 100 % Rg tested | Guarantees gate resistance ≤ 2.1 Ω, ensuring consistent switching timing and reduced gate driver stress across production lots |
| Halogen-free construction | Meets IEC 61249-2-21 requirements - supports RoHS-compliant, environmentally regulated industrial and telecom end equipment |
| Low-profile 1.07 mm height | Enables use in ultra-thin power modules and stacked PCB architectures where Z-height is constrained to <1.2 mm |
Applications
| Secondary Synchronous Rectification | Point-of-Load Regulation |
|---|---|
Use Scenario: Used as the synchronous rectifier in the secondary side of isolated DC-DC converters (e.g., forward, LLC resonant) operating from 5–12 V output rails. IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce forward voltage drop and conduction loss; driven by controller's synchronous gate signal with precise timing alignment. Use Value: Achieves >2 % efficiency gain over 40 V Schottky diodes at 20 A load due to 3.8 mΩ RDS(on) and 0.61 V VSD, lowering thermal stress on transformer and output capacitors. | Use Scenario: Integrated into compact 3.3 V or 5 V step-down regulators supplying FPGAs, ASICs, or memory subsystems on dense server or telecom boards. IC Role / Device Role / Timing Role: High-side or low-side switch in multiphase buck converter stages; operates at 300–1000 kHz switching frequency with tight duty-cycle control. Use Value: Enables 35 A continuous current per phase with <0.5 °C/W effective thermal resistance when paired with 0.5 in² spreading copper, maintaining TJ < 105 °C at full load. |
| Load Switching | OR-ing Circuitry |
Use Scenario: Controls power delivery to hot-swap peripherals or auxiliary rails in industrial PLCs and embedded controllers requiring inrush current limiting and fault protection. IC Role / Device Role / Timing Role: Low-side load switch with integrated gate driver interface; used with external current-sense resistor and comparator for overcurrent shutdown. Use Value: Supports 25 A steady-state load with <10 mΩ on-resistance, minimizing voltage droop (<250 mV at 25 A) and enabling fast turn-on/turn-off (td(on) = 27 ns, tf = 12 ns). | Use Scenario: Implements redundant power path selection in dual-input 12 V systems (e.g., battery + adapter), preventing backfeed and enabling seamless switchover. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET pair acting as ideal diode; controlled by dedicated OR-ing controller (e.g., LTC4359). Use Value: Delivers <0.6 V forward drop at 10 A (vs. 0.4 V Schottky but with lower leakage), while body diode reverse recovery (trr = 46 ns) prevents shoot-through during transition events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7101DN-T1-GE3 | Same PowerPAK 1212-8 package, but rated for 20 V VDS and 4.5 mΩ RDS(on) at 4.5 V - higher voltage margin, slightly higher conduction loss | Better suited for 15–20 V input rails; less optimal for 12 V-only systems where lowest RDS(on) is critical | Select Si7101DN-T1-GE3 only if system requires >12 V transient tolerance or shares footprint with higher-VDS variants |
| IRLHS6242PBF | SO-8 package, 20 V VDS, 4.2 mΩ RDS(on) at 4.5 V, RthJC = 3.5 °C/W - larger footprint, higher thermal resistance, no halogen-free certification | Compatible with legacy SO-8 layouts but lacks thermal performance and environmental compliance of SI7102DN-T1-GE3 | Choose IRLHS6242PBF only for backward-compatible SO-8 redesigns where board area and thermal budget allow 2× higher RthJC |
Compared with Si7101DN-T1-GE3 and IRLHS6242PBF, SI7102DN-T1-GE3 offers the lowest RDS(on) and best thermal performance in its class, making it the preferred choice for space- and efficiency-critical 12 V synchronous rectification and POL applications - especially where halogen-free compliance and 1.07 mm height are mandatory.
Availability
SI7102DN-T1-GE3 is available at Aetrix Electronics and suitable for secondary synchronous rectification, point-of-load regulation, and load switching applications requiring stable component supply, high thermal reliability, and halogen-free compliance.
Supply support for SI7102DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, thermal robustness, and reliability.
The SI7102DN-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® family, engineered specifically for high-current, low-voltage DC-DC conversion in computing, telecom, and industrial power supplies where minimal conduction loss and ultra-compact packaging are essential.
FAQ
What is the maximum continuous drain current rating for SI7102DN-T1-GE3 at 70 °C case temperature?
The SI7102DN-T1-GE3 supports 35 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB thermal design with adequate copper area for the exposed drain pad. Derating is not required between 25 °C and 70 °C case temperature - the 35 A value holds across that range under steady-state conditions.
Does SI7102DN-T1-GE3 require a gate resistor for safe operation in a 500 kHz synchronous buck converter?
Yes, SI7102DN-T1-GE3 benefits from an external gate resistor to control dV/dt and prevent ringing, especially at 500 kHz. With 41 nC total gate charge and typical gate resistance of 1.4–2.1 Ω, a 5–10 Ω series resistor is recommended to limit peak gate current and dampen oscillation without significantly increasing switching time. Layout must keep gate loop inductance below 2 nH for stable operation.
Can SI7102DN-T1-GE3 be used in a back-to-back configuration for bidirectional load switching?
Yes, SI7102DN-T1-GE3 can be used in back-to-back configuration for bidirectional blocking, provided both devices are driven with matched gate signals and appropriate level-shifting. Its 12 V VDS rating and low RDS(on) support symmetric conduction in either direction. However, body diode conduction must be avoided during reverse polarity events - external protection or active control is required to prevent unintended forward biasing of the intrinsic diode.
What is the recommended minimum PCB pad size for the drain terminal of SI7102DN-T1-GE3 to achieve the published RthJC of 1.9 °C/W?
To achieve the published 1.9 °C/W junction-to-case thermal resistance, Vishay recommends a minimum drain pad area of 0.3 in² (≈193 mm²) with solid copper on at least one internal layer. Application Note AN822 confirms diminishing returns beyond 0.5 in². For SI7102DN-T1-GE3, extending the drain land pattern beyond the 3.3 mm × 3.3 mm footprint - particularly outward and upward - maximizes thermal conduction while maintaining manufacturability with standard reflow profiles.
Is SI7102DN-T1-GE3 suitable for automotive applications per AEC-Q101 qualification?
No, SI7102DN-T1-GE3 is not AEC-Q101 qualified. It is designed for industrial, computing, and telecom power applications. While its operating junction temperature range (–50 °C to +150 °C) overlaps with automotive requirements, Vishay does not list this part in its AEC-Q101 qualified MOSFET portfolio. For automotive-grade equivalents, consult Vishay's AQ-series PowerPAK devices such as SQJQ412E.
SI7102DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 3.8mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3720 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 52W (Tc)
- Operating Temperature:
- -50°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7102DN-T1-GE3 FAQ
1.How can I place an order for SI7102DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7102DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7102DN-T1-GE3 reliable?
The price and inventory of SI7102DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7102DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7102DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7102DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7102DN-T1-GE3?
SI7102DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7102DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7102DN-T1-GE3?
For technical support, including SI7102DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7102DN-T1-GE3 requirements.
6.How does Aetrix verify that SI7102DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7102DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7102DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7102DN-T1-GE3?
All SI7102DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7102DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7102DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7102DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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