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Vishay Siliconix SI7104DN-T1-GE3
- Part No.:
- SI7104DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7104DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 12V 35A PPAK 1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:4,918
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Product details
Overview
SI7104DN-T1-GE3 from Vishay Siliconix is a lead-free and halogen-free N-channel TrenchFET® power MOSFET in PowerPAK® 1212-8 package, rated for 12 V VDS, 35 A continuous drain current at TC = 25 °C, 3.7 mΩ RDS(on) at VGS = 4.5 V, and 23 nC total gate charge - optimized for high-efficiency synchronous rectification in point-of-load DC/DC converters.
For engineers reviewing the SI7104DN-T1-GE3 datasheet, SI7104DN-T1-GE3 pinout, SI7104DN-T1-GE3 application, or SI7104DN-T1-GE3 equivalent, key selection criteria include its ultra-low RDS(on) at 2.5–4.5 V drive, 1.07 mm profile enabling dense PCB layouts, and validated thermal performance with RthJC = 1.9 °C/W for junction-to-case heat transfer.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with minimal gate charge. Its 12 V rating targets low-voltage logic-level gate drive systems, and it supports bidirectional conduction via an integrated body diode with 0.8–1.2 V forward voltage at 3.2 A.
The PowerPAK 1212-8 package features exposed copper drain pads on the bottom surface for direct thermal coupling to the PCB, delivering RthJA = 24 °C/W (typ.) under standard 1" × 1" FR4 mounting - significantly lower than SO-8 or TSSOP-8 alternatives.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 12 V - Maximum drain-source blocking voltage; suitable for 5 V, 3.3 V, and 1.8 V output rails in POL converters. |
| RDS(on) | 3.7 mΩ at VGS = 4.5 V - Enables <1 W conduction loss at 26.1 A, critical for high-current, low-voltage synchronous rectifiers. |
| ID (continuous) | 35 A at TC = 25 °C - Package-limited current handling; derates to 20.9 A at TC = 70 °C per thermal constraints. |
| Qg | 23 nC at VGS = 4.5 V - Low gate charge reduces driver power and switching losses in high-frequency (>500 kHz) applications. |
| RthJC | 1.9 °C/W (typ.) - Enables efficient heat transfer from die to PCB copper, supporting >30 W dissipation with minimal temperature rise. |
| VGS(th) | 0.6–1.8 V - Logic-level threshold ensures full enhancement with 2.5 V or 3.3 V gate drivers without level-shifting. |
| VSD | 0.8–1.2 V at IS = 3.2 A - Low body diode forward voltage minimizes reverse-recovery losses during dead-time conduction. |
Pinout & Package
PowerPAK® 1212-8 is a leadless, surface-mount package measuring 3.30 mm × 3.30 mm × 1.07 mm, with exposed drain pads on the bottom side for thermal and electrical connection to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Common source terminals; electrically tied internally; used for return path and thermal sinking via top-side copper. |
| 5 | Gate | Single gate input; requires low-impedance drive due to 0.6–1.2 Ω intrinsic gate resistance. |
| 6, 7, 8 | Drain | Three parallel drain terminals; connected to exposed bottom copper pad - primary thermal and high-current path to PCB. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers 3.7 mΩ RDS(on) at 4.5 V drive - enables high-efficiency operation without gate boosting in 3.3 V control systems. |
| PowerPAK® 1212-8 package | 1.07 mm height and 3.3 mm × 3.3 mm footprint - saves >40 % board area vs. TSSOP-8 while maintaining thermal performance comparable to SO-8. |
| 100 % Rg tested | Guarantees gate resistance between 0.6–1.2 Ω - ensures consistent switching timing and driver design across production lots. |
| Halogen-free and RoHS-compliant | Meets IPC-4101D/21 and JEDEC J-STD-020D reflow standards - supports lead-free assembly with peak temperature up to 240 °C. |
| Low Qgd/Qg ratio | 5.1 nC / 23 nC = 0.22 - improves hard-switching robustness and reduces Miller-induced shoot-through risk in synchronous buck stages. |
Applications
| Server VRM Synchronous Rectifier | GPU Core Voltage Regulator |
|---|---|
Use Scenario: High-current, high-frequency (600–1000 kHz) buck converter supplying 0.8–1.2 V to CPU/GPU cores with <500 ns dead time. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 90 %. Use Value: 3.7 mΩ RDS(on) at 4.5 V gate drive cuts conduction loss by >65 % versus 10 mΩ alternatives, directly increasing system efficiency at 30–60 A load. |
Use Scenario: Multi-phase VRM on graphics card PCB with tight thermal constraints and limited board space near GPU die. IC Role / Device Role: High-density, low-profile power switch in 3-phase interleaved buck stage operating at 800 kHz. Use Value: 1.07 mm profile and 3.3 mm × 3.3 mm footprint allow placement directly under GPU thermal shield, while RthJC = 1.9 °C/W maintains junction temperature <110 °C at 25 A per phase. |
| Industrial PLC Power Module | 5G Baseband Power Supply |
Use Scenario: 12 V input, 3.3 V/5 V output DC/DC module in DIN-rail mounted programmable logic controller with ambient up to 70 °C. IC Role / Device Role: Primary synchronous rectifier in isolated flyback or non-isolated buck converter powering FPGA and I/O banks. Use Value: Halogen-free and lead-free construction meets industrial safety standards (IEC 61000-6-2/4), while 150 °C max TJ rating ensures reliability over full temperature range. |
Use Scenario: Point-of-load regulator for RF transceiver ASIC in massive MIMO radio unit requiring low EMI and stable 1.0 V supply. IC Role / Device Role: Final-stage synchronous rectifier in multiphase buck converter with strict dv/dt and di/dt control requirements. Use Value: Low Ciss (2800 pF) and Crss/Ciss ratio of 0.18 minimize switching noise coupling into adjacent RF sections, improving ACLR performance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7103DN-T1-GE3 | Same PowerPAK 1212-8 package, but 20 V VDS, 4.5 mΩ RDS(on) @ 4.5 V, higher Qg (28 nC) | Better suited for 12 V input systems with higher bus transients; less optimal for 5 V rail where 12 V rating provides insufficient margin | Select when wider VDS margin is required; avoid if minimizing gate drive loss is priority |
| DMN2020LFG-7 | 20 V VDS, 4.2 mΩ @ 4.5 V, SOT-23-6 package, RthJA = 110 °C/W (typ.) | Limited to ≤5 A continuous due to thermal limits; unsuitable for >10 A POL loads | Only viable for low-current auxiliary rails; not a functional replacement for main output stages |
Compared with SI7104DN-T1-GE3, Si7103DN-T1-GE3 trades lower RDS(on) for higher voltage rating and gate charge, while DMN2020LFG-7 sacrifices thermal capability and current capacity for small-outline packaging - neither offers drop-in compatibility in high-current synchronous rectifier designs.
Availability
SI7104DN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, GPU power modules, industrial PLCs, and 5G baseband power supplies requiring stable component supply, halogen-free compliance, and high-density thermal management.
Supply support for SI7104DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si7104DN belongs to Vishay's TrenchFET® PowerPAK® family, engineered specifically for high-current, low-voltage synchronous rectification in space-constrained computing and telecom power systems.
FAQ
What is the maximum continuous drain current rating for SI7104DN-T1-GE3 at 70 °C case temperature?
The SI7104DN-T1-GE3 is rated for 35 A continuous drain current at TC = 25 °C, derating linearly to 20.9 A at TC = 70 °C under steady-state conditions on a 1" × 1" FR4 board. This limit is defined by package thermal constraints, not silicon capability, and must be verified against actual PCB layout and copper mass.
Does SI7104DN-T1-GE3 support 2.5 V gate drive for full enhancement?
Yes, SI7104DN-T1-GE3 achieves 7 mΩ RDS(on) at VGS = 2.5 V and ID = 19 A, confirming full enhancement at 2.5 V logic levels. Its VGS(th) range of 0.6–1.8 V ensures reliable turn-on even with process variation and temperature drift, making it compatible with standard 2.5 V microcontroller GPIOs.
What is the thermal resistance from junction to case (RthJC) for SI7104DN-T1-GE3, and how is it measured?
The SI7104DN-T1-GE3 has a typical RthJC of 1.9 °C/W, measured from junction to the exposed drain pad on the bottom of the PowerPAK 1212-8 package. This value assumes direct thermal contact between the drain pad and a large copper plane - no thermal interface material is required, as the copper pad serves as both electrical and thermal interface.
Can SI7104DN-T1-GE3 be used in parallel configurations, and what layout considerations apply?
Yes, SI7104DN-T1-GE3 supports paralleling due to its positive temperature coefficient of RDS(on). To ensure current sharing, use symmetrical gate drive paths with matched trace lengths and identical source inductance; place devices adjacent to each other on the same thermal plane and connect all drain pads to a common copper pour with equalized thermal vias.
Is SI7104DN-T1-GE3 qualified for reflow soldering with lead-free processes?
Yes, SI7104DN-T1-GE3 is qualified for lead-free reflow per JEDEC J-STD-020D, with a maximum peak temperature of 240 °C for 20–40 seconds. The device uses matte tin plating and passes preconditioning tests including temperature cycling and biased HAST, ensuring reliability in automated SMT assembly lines.
SI7104DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 3.7mOhm @ 26.1A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2800 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 52W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7104DN-T1-GE3 FAQ
1.How can I place an order for SI7104DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7104DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7104DN-T1-GE3 reliable?
The price and inventory of SI7104DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7104DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7104DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7104DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7104DN-T1-GE3?
SI7104DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7104DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7104DN-T1-GE3?
For technical support, including SI7104DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7104DN-T1-GE3 requirements.
6.How does Aetrix verify that SI7104DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7104DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7104DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7104DN-T1-GE3?
All SI7104DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7104DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7104DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7104DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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