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Vishay Siliconix SI7106DN-T1-GE3
- Part No.:
- SI7106DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7106DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 20V 12.5A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:6,321
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Product details
Overview
SI7106DN-T1-GE3 from Vishay Siliconix is an N-channel 20-V TrenchFET® power MOSFET in PowerPAK® 1212-8 package, with RDS(on) = 6.2 mΩ at VGS = 4.5 V, 19.5-A continuous drain current, and 17.5-nC total gate charge. It is optimized for synchronous rectification in DC-DC converters and high-efficiency power stages.
For engineers reviewing the SI7106DN-T1-GE3 datasheet, SI7106DN-T1-GE3 pinout, SI7106DN-T1-GE3 application, or SI7106DN-T1-GE3 equivalent, key selection criteria include low RDS(on) at 2.5 V/4.5 V gate drive, PWM switching performance, thermal resistance (RthJA = 65 °C/W), and halogen-free RoHS compliance.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching. Its gate threshold voltage (0.6–1.5 V) enables robust operation with 2.5-V logic-level drive, and its 1.07-mm profile supports ultra-thin PCB designs.
The device integrates a body diode with VSD = 0.8–1.2 V at 3.2 A and exhibits 30–60 ns reverse recovery time. Thermal design is supported by RthJC = 1.9 °C/W (typical) and validated 100% Rg testing for gate resistance consistency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum blocking voltage for 12-V input rail applications |
| RDS(on) @ 4.5 V | 6.2 mΩ - Enables <1 W conduction loss at 19.5 A in compact layouts |
| ID (continuous) | 19.5 A @ TA = 25 °C - Supports high-current synchronous buck output stages |
| Qg | 17.5 nC - Low gate charge reduces driver power and switching losses in PWM |
| RthJA | 65 °C/W - Requires minimal copper area for thermal management on FR4 |
| VGS(th) | 0.6–1.5 V - Ensures turn-on with standard 2.5-V or 3.3-V logic controllers |
| VSD | 0.8–1.2 V - Low forward drop improves efficiency in synchronous rectifier mode |
Pinout & Package
SI7106DN-T1-GE3 is housed in a leadless PowerPAK® 1212-8 package (3.3 mm × 3.3 mm, 1.07 mm height) with exposed drain pads on the bottom for thermal conduction. The top-side marking includes "7106" and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–3, S | Source | Common source connection for internal parallel FETs; tied to PCB ground plane |
| 4, G | Gate | Single gate input with 0.7–2.1 Ω Rg; requires low-inductance driver routing |
| 5–8, D | Drain | Exposed drain pad on bottom surface; primary thermal path to PCB copper |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 6.2 mΩ RDS(on) at 4.5 V while maintaining rugged avalanche rating (EAS = 45 mJ) |
| PowerPAK® 1212-8 package | Reduces board space by >50% vs. SO-8; 1.9 °C/W RthJC improves thermal coupling to PCB |
| PWM-optimized switching | 25 ns td(on), 15 ns tr, 50 ns td(off), 12 ns tf support >1 MHz converter operation |
| 100% Rg tested | Guarantees gate resistance between 0.7–2.1 Ω, critical for consistent turn-on timing across production lots |
| Halogen-free & RoHS | Meets IEC 61249-2-21 and JEDEC J-STD-020 reflow standards without brominated flame retardants |
Applications
| Server VRM Output Stage | USB-C PD 3.0 Buck Converter |
|---|---|
Use Scenario: High-density 48 V-to-12 V intermediate bus converter delivering up to 120 W in server motherboard VRMs. IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diode in secondary-side synchronous rectification. Use Value: 6.2 mΩ RDS(on) cuts conduction loss by >65% vs. 20-V Schottky, improving full-load efficiency by 1.8% at 19.5 A. | Use Scenario: 20-V input, 5–20-V programmable output USB-C Power Delivery buck regulator in portable chargers. IC Role / Device Role / Timing Role: High-side main switch in 500-kHz to 1-MHz synchronous buck topology. Use Value: 17.5-nC Qg and 25 ns td(on) enable clean 1-MHz switching with minimal gate driver overhead and EMI. |
| Industrial PLC Power Module | Automotive ADAS Camera Power Supply |
Use Scenario: 24-V industrial input DC-DC module powering FPGA and I/O banks in programmable logic controllers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in isolated flyback secondary or non-isolated buck stage. Use Value: -55 to 150 °C TJ rating and 30-A IAS ensure reliability under transient overloads and wide ambient temperature swings. | Use Scenario: Compact 12-V input, 3.3-V/2-A power supply for image sensor and ISP in automotive rear-view cameras. IC Role / Device Role / Timing Role: Primary switching FET in small-footprint buck converter operating in automotive temperature range. Use Value: 1.07-mm profile allows integration into tight camera module housings; halogen-free construction meets automotive material compliance requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7107DN-T1-GE3 | Same PowerPAK 1212-8 package; RDS(on) = 7.8 mΩ @ 4.5 V; higher VGS(th) (0.8–2.0 V) | Slightly lower current capability (17.5 A); less suitable for 2.5-V drive | Select when marginally higher RDS(on) is acceptable and tighter VGS(th) distribution is required |
| IRLML6344TRPBF | SO-8 package; RDS(on) = 6.5 mΩ @ 4.5 V; RthJA = 110 °C/W (higher thermal resistance) | Larger footprint; less efficient thermal dissipation; not halogen-free | Choose only if SO-8 compatibility is mandatory and board space/thermal budget permits |
Compared with SI7106DN-T1-GE3, Si7107DN-T1-GE3 trades 1.6-mΩ higher on-resistance for improved gate threshold consistency, while IRLML6344TRPBF offers similar RDS(on) but sacrifices thermal performance and environmental compliance in a legacy package.
Availability
SI7106DN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, USB-C PD power supplies, and industrial PLC power modules requiring stable component supply, halogen-free compliance, and high-current density in ultra-thin form factors.
Supply support for SI7106DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The Si7106DN belongs to Vishay's TrenchFET® Gen IV logic-level MOSFET family, engineered specifically for high-frequency, high-efficiency synchronous rectification and DC-DC conversion in space-constrained, thermally demanding applications.
FAQ
What is the maximum continuous drain current for SI7106DN-T1-GE3 at 70 °C ambient?
The SI7106DN-T1-GE3 supports 15.6 A continuous drain current at TA = 70 °C with proper PCB copper area. This rating assumes mounting on a 1" × 1" FR4 board per Vishay's test conditions (Document 73142). Derating applies above 70 °C ambient due to thermal limits.
Does SI7106DN-T1-GE3 support 2.5-V gate drive in production systems?
Yes, SI7106DN-T1-GE3 is fully specified for 2.5-V operation: RDS(on) = 9.8 mΩ at VGS = 2.5 V and ID = 15.5 A. Its VGS(th) range (0.6–1.5 V) ensures reliable turn-on with 2.5-V logic controllers, confirmed in the official datasheet (S-81529-Rev. E).
What is the safe operating area (SOA) limitation for SI7106DN-T1-GE3 in single-pulse conditions?
The SI7106DN-T1-GE3 SOA curve shows it is limited by RDS(on) at low VDS and by avalanche energy (EAS = 45 mJ) at high VDS. At 10 V VDS, it supports up to 60 A for 10 µs pulses; at 20 V, maximum pulse current drops to ~30 A to stay within EAS limits.
Is SI7106DN-T1-GE3 qualified for reflow soldering per JEDEC standards?
Yes, SI7106DN-T1-GE3 is qualified for lead-free reflow with peak temperature up to 260 °C (per JEDEC J-STD-020). The PowerPAK 1212-8 package is leadless and requires controlled thermal profiles; manual soldering with an iron is not recommended per Vishay's guidelines.
How does the thermal resistance of SI7106DN-T1-GE3 compare between junction-to-ambient and junction-to-case?
SI7106DN-T1-GE3 has RthJA = 65 °C/W (steady-state) and RthJC = 1.9 °C/W (typical). The large difference confirms that heat flows primarily through the exposed drain pad to the PCB - effective thermal design requires ≥1 cm² of 2-oz copper connected to the drain terminals.
SI7106DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 12.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 6.2mOhm @ 19.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7106DN-T1-GE3 FAQ
1.How can I place an order for SI7106DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7106DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7106DN-T1-GE3 reliable?
The price and inventory of SI7106DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7106DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7106DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7106DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7106DN-T1-GE3?
SI7106DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7106DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7106DN-T1-GE3?
For technical support, including SI7106DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7106DN-T1-GE3 requirements.
6.How does Aetrix verify that SI7106DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7106DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7106DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7106DN-T1-GE3?
All SI7106DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7106DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7106DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7106DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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