Vishay Siliconix SI7110DN-T1-GE3

Overview

SI7110DN-T1-GE3 from Vishay Siliconix is an N-channel 20-V TrenchFET® Gen II Power MOSFET in a lead-free and halogen-free PowerPAK® 1212-8 package, featuring R_DS(on) = 5.3 mΩ at V_GS = 10 V, 14 nC total gate charge, and 21.1 A continuous drain current - optimized for high-efficiency synchronous rectification and buck converter topologies.

For engineers reviewing the SI7110DN-T1-GE3 datasheet, SI7110DN-T1-GE3 pinout, SI7110DN-T1-GE3 application, or SI7110DN-T1-GE3 equivalent, key selection criteria include its ultra-low thermal resistance (R_thJC = 1.9 °C/W), PWM-optimized switching performance, and verified 100 % R_g testing for gate drive consistency in high-frequency power stages.

Technical Context

This MOSFET employs trench-based silicon architecture to achieve low on-resistance and fast switching with minimal gate charge. Its design integrates a thermally enhanced PowerPAK 1212-8 package where the exposed drain pad provides direct junction-to-PCB thermal conduction, enabling stable operation under pulsed loads up to 60 A.

The device supports gate drive voltages from 4.5 V to 10 V, delivering R_DS(on) = 7.8 mΩ at 4.5 V and 5.3 mΩ at 10 V - making it suitable for both 5 V and 12 V control rails in compact DC/DC converters. Body diode recovery (t_rr = 30–60 ns, Q_rr = 25–50 nC) is characterized for synchronous rectifier duty cycles.

Key Specifications

Pinout & Package

SI7110DN-T1-GE3 uses the PowerPAK® 1212-8 surface-mount package (3.30 mm × 3.30 mm × 1.07 mm), featuring an exposed drain pad on the bottom side for thermal management and eight terminals arranged in a single-row configuration with three parallel source pins, one gate pin, and four parallel drain pins.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with SI7107DN-T1-GE3, SI7110DN-T1-GE3 delivers 22 % lower R_DS(on) and 33 % higher current capability - justifying its use in 20 A+ synchronous rectifiers; versus IRF7470PBF, it achieves 4.5× better junction-to-ambient thermal performance in half the footprint, eliminating need for external thermal relief.

Availability

SI7110DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, high-frequency buck conversion, and USB-C PD power delivery requiring stable component supply, long-term lifecycle assurance, and halogen-free compliance.

Supply support for SI7110DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si71xx family targets high-density DC/DC conversion, where low R_DS(on), fast switching, and advanced packaging enable smaller, cooler-running power stages in telecom, computing, and industrial equipment.

FAQ

What is the maximum continuous drain current for SI7110DN-T1-GE3 at 70 °C ambient?

At T_A = 70 °C, SI7110DN-T1-GE3 supports 16.9 A continuous drain current with proper PCB copper area (1" × 1" FR4). This rating assumes steady-state thermal conditions and accounts for R_thJA = 33 °C/W (10 s) or 81 °C/W (steady state) depending on layout. Derating curves in the datasheet confirm linear reduction from 21.1 A at 25 °C to 16.9 A at 70 °C ambient.

Does SI7110DN-T1-GE3 require a gate resistor for stable operation?

SI7110DN-T1-GE3 does not mandate an external gate resistor but benefits from one (typically 2–10 Ω) to dampen ringing caused by parasitic inductance in high-speed switching. The device's tested R_g of 0.7–2.1 Ω helps predict gate loop behavior, and application note AN822 recommends minimizing gate trace length and using local decoupling near the SI7110DN-T1-GE3 gate pad to ensure clean turn-on/turn-off edges.

Can SI7110DN-T1-GE3 be used in avalanche-rated circuits?

Yes - SI7110DN-T1-GE3 is rated for single-pulse avalanche energy E_AS = 61 mJ and single-pulse avalanche current I_AS = 35 A (L = 1 mH). These parameters are validated per JEDEC JESD24-11 and apply to unclamped inductive switching events. However, repetitive avalanche operation is not guaranteed, and designers must verify stress limits using the SOA curve in the datasheet before deploying SI7110DN-T1-GE3 in unprotected flyback or motor drive snubberless topologies.

How does the PowerPAK 1212-8 package of SI7110DN-T1-GE3 improve thermal performance over SO-8?

The PowerPAK 1212-8 package of SI7110DN-T1-GE3 achieves R_thJC = 1.9 °C/W - 10× lower than typical SO-8 devices (~20 °C/W) - by exposing the drain pad directly to the PCB. This eliminates thermal bottlenecks through mold compound and leads, allowing >90 % of heat to flow vertically into inner copper layers. In practice, SI7110DN-T1-GE3 running at 2 W shows only a 4.8 °C rise above board temperature, versus >40 °C for SO-8 equivalents.

Is SI7110DN-T1-GE3 compatible with lead-free reflow profiles?

Yes - SI7110DN-T1-GE3 is qualified for lead-free reflow with peak temperature up to 240 °C (±0 °C tolerance) for 20–40 seconds, per IPC/JEDEC J-STD-020. Vishay specifies full compliance with the profile in document 73257, including ramp rates ≤6 °C/s and time above 180 °C limited to 70–180 seconds. The device passes preconditioning and reliability testing (temperature cycling, HAST) post-reflow, confirming robustness for SI7110DN-T1-GE3 in high-volume SMT assembly.