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Vishay Siliconix SI7138DP-T1-GE3
- Part No.:
- SI7138DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7138DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 60V 30A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,278
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Product details
Overview
SI7138DP-T1-GE3 from Vishay Siliconix is an N-channel 60 V, 30 A power MOSFET in PowerPAK® SO-8 package, featuring RDS(on) = 7.8 mΩ at VGS = 10 V, Qgd = 11 nC, and 100 % Rg and avalanche tested - optimized for primary-side switching in high-efficiency AC-DC adapters and server SMPS.
For engineers reviewing the SI7138DP-T1-GE3 datasheet, SI7138DP-T1-GE3 pinout, SI7138DP-T1-GE3 application, or SI7138DP-T1-GE3 equivalent, key selection criteria include low gate-drain charge for fast switching, halogen-free and RoHS-compliant construction, thermal resistance RthJC = 1.0 °C/W, and validated avalanche energy EAS = 93 mJ under pulsed conditions.
Technical Context
This MOSFET employs a trench-gate silicon process with reduced Qgd to minimize switching losses during hard-switched transitions. Its gate threshold voltage (VGS(th) = 2–4 V) supports standard 6 V and 10 V gate drive, while the body diode exhibits trr = 45–70 ns and Qrr = 80–120 nC for synchronous rectification compatibility.
The PowerPAK SO-8 package delivers low thermal resistance (RthJC = 1.0 °C/W max) and high current capability (ID = 30 A continuous at TC = 25 °C), with exposed drain pads on all four corners enabling efficient heat transfer to PCB copper planes without requiring external heatsinks in many medium-power designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Supports primary-side switching in universal-input offline converters up to 400 V DC bus with margin. |
| RDS(on) | 7.8 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 30 A, critical for high-current, low-voltage output rails. |
| Qgd | 11 nC - Reduces Miller-induced switching delay and dv/dt-induced turn-on risk in high-frequency topologies. |
| EAS | 93 mJ - Validated single-pulse avalanche capability ensures robustness against inductive switching transients. |
| RthJC | 1.0 °C/W (typ.) - Allows >60 W power dissipation with modest heatsinking, supporting compact board-level thermal design. |
| ID (cont.) | 30 A @ TC = 25 °C - Package-limited current rating suitable for 100–300 W power stages without paralleling. |
| VGS(th) | 2–4 V - Ensures reliable turn-on with standard logic-level or gate-driver IC outputs. |
Pinout & Package
SI7138DP-T1-GE3 uses the leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm), with drain terminals on all four corners for low-inductance, high-current routing and thermal spreading. The bottom-exposed drain pad provides direct thermal path to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Pin 1) | Gate control input | Low-impedance gate terminal accepting standard 6–10 V drive; Rg = 0.6–0.9 Ω enables fast edge rates with minimal external gate resistor. |
| S (Pin 2) | Source reference node | Common return for gate drive and load current; tied to power ground in buck/forward topologies. |
| D (Pins 3–8) | Drain power output | Four corner-mounted drain terminals (Pins 3,4,7,8) and two center drain leads (Pins 5,6) provide parallel current paths and low-inductance connection to high-side switch node. |
Key Features
| Feature | Design Value |
|---|---|
| Reduced Qgd | 11 nC enables faster switching transitions and lower ESW in 100–500 kHz SMPS designs. |
| 100 % Rg tested | Guarantees gate resistance consistency across production lots, improving gate-drive timing predictability. |
| 100 % avalanche tested | Each unit validated for 93 mJ single-pulse energy, eliminating need for system-level avalanche derating. |
| Halogen-free & RoHS | Complies with IEC 61249-2-21 and Directive 2002/95/EC - required for consumer and industrial end-equipment certifications. |
| PowerPAK SO-8 thermal performance | RthJC = 1.0 °C/W allows >60 W dissipation with 2 oz copper and 2-in² thermal pad - no external heatsink needed in many applications. |
Applications
| AC-DC Adapter Primary Switch | Server PSU High-Side Switch |
|---|---|
Use Scenario: 65–120 W universal-input offline flyback converter operating at 65–130 kHz. IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer from bulk capacitor to transformer primary. Use Value: Low Qgd and RDS(on) reduce total switching + conduction losses by ≥12 % vs. legacy 8 mΩ MOSFETs, improving efficiency from 88 % to 90.5 % at full load. | Use Scenario: 300–500 W half-bridge or LLC resonant converter in 1U server power supply. IC Role / Device Role / Timing Role: High-side leg switch in primary bridge, synchronized to gate driver with precise dead-time control. Use Value: Avalanche-rated operation withstands bus overvoltage transients during hot-swap events; RthJC = 1.0 °C/W maintains TJ < 125 °C at 30 A without forced air. |
| Industrial Motor Drive Half-Bridge | Telecom DC-DC Intermediate Bus Converter |
Use Scenario: 200–400 V DC bus in 3-phase inverter stage for HVAC blower or pump control. IC Role / Device Role / Timing Role: Upper-leg switch in three-phase half-bridge, driven by isolated gate driver with 10 V supply. Use Value: Body diode trr = 45–70 ns and Qrr = 80–120 nC minimize shoot-through risk and reverse recovery loss during PWM commutation. | Use Scenario: 48 V input to 12 V output non-isolated buck converter in telecom shelf management system. IC Role / Device Role / Timing Role: Synchronous rectifier switch in high-current (25–35 A) buck stage, replacing Schottky diode. Use Value: RDS(on) = 7.8 mΩ cuts conduction loss by 65 % vs. 40 V Schottky, reducing junction temperature rise by 22 °C at 30 A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 8.0 mΩ @ 10 V; Qgd = 13 nC; TO-252 package; RthJC = 2.5 °C/W | Higher thermal resistance requires larger heatsink; less suitable for high-density layouts | Choose when TO-252 footprint is fixed and thermal margin exists; avoid in space-constrained 1U systems. |
| DMN6070LSD-13 | RDS(on) = 7.0 mΩ @ 10 V; Qgd = 14.5 nC; PowerDI 5060 package; RthJC = 1.2 °C/W | Slightly lower RDS(on) but higher Qgd increases switching loss at >200 kHz | Prefer for ultra-low conduction loss priority below 150 kHz; verify gate drive strength due to higher Qg = 83 nC. |
Compared with IRF7470PBF and DMN6070LSD-13, SI7138DP-T1-GE3 offers the best balance of low Qgd, industry-leading RthJC, and halogen-free compliance - making it optimal for thermally constrained, high-frequency primary-side switching where reliability and regulatory alignment are critical.
Availability
SI7138DP-T1-GE3 is available at Aetrix Electronics and suitable for AC-DC adapters, server power supplies, and industrial motor drives requiring stable component supply, long-term lifecycle support, and consistent halogen-free/RoHS compliance.
Supply support for SI7138DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.
The Si7138DP product line targets high-performance primary-side switching in offline power conversion, delivering optimized RDS(on)/Qgd trade-offs and validated avalanche robustness for mission-critical industrial and computing applications.
FAQ
What is the maximum continuous drain current rating for SI7138DP-T1-GE3 at 70 °C case temperature?
The SI7138DP-T1-GE3 supports 30 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and does not require derating below 70 °C case temperature, unlike ambient-limited ratings which drop to 15.7 A at TA = 70 °C. SI7138DP-T1-GE3 maintains full 30 A capability as long as the case temperature remains ≤70 °C.
Does SI7138DP-T1-GE3 have a specified gate resistance value, and how is it used in layout design?
Yes, SI7138DP-T1-GE3 has a typical gate resistance (Rg) of 0.6 Ω and maximum of 0.9 Ω, measured at 1 MHz. This internal Rg helps dampen gate ringing and reduces sensitivity to PCB trace inductance, allowing simpler gate-drive networks. For SI7138DP-T1-GE3, a 0–5 Ω external series gate resistor is typically sufficient to control dv/dt and optimize switching speed without risking oscillation.
Is SI7138DP-T1-GE3 suitable for synchronous rectification in secondary-side applications?
No - SI7138DP-T1-GE3 is optimized as a primary-side high-side switch, not a low-side synchronous rectifier. Its VGS(th) range (2–4 V) and body diode characteristics (VSD = 0.8–1.2 V, trr = 45–70 ns) are acceptable but not optimized for secondary-side use. For synchronous rectification, Vishay recommends dedicated low-threshold, low-Qrr parts like SiR872DP. SI7138DP-T1-GE3 should remain in primary-side roles.
What is the meaning of "Halogen-free According to IEC 61249-2-21" for SI7138DP-T1-GE3?
This designation means SI7138DP-T1-GE3 complies with IEC 61249-2-21, limiting chlorine and bromine content to ≤900 ppm each and total halogens to ≤1500 ppm in the finished device. It confirms absence of halogenated flame retardants (e.g., polybrominated biphenyls) in molding compounds and laminates - a requirement for eco-labels (e.g., EPEAT, Blue Angel) and regional environmental regulations beyond RoHS.
Can SI7138DP-T1-GE3 be reworked using hand soldering tools?
No - the PowerPAK SO-8 package of SI7138DP-T1-GE3 is leadless with exposed copper drain pads, and manual soldering with a soldering iron is explicitly not recommended per Vishay's datasheet (Note e). Rework requires controlled reflow profiling per document 73461; improper hand-soldering risks thermal damage, voiding, or interconnect failure. SI7138DP-T1-GE3 must be processed using automated reflow only.
SI7138DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.8mOhm @ 19.7A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 135 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6900 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.4W (Ta), 96W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7138DP-T1-GE3 FAQ
1.How can I place an order for SI7138DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7138DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7138DP-T1-GE3 reliable?
The price and inventory of SI7138DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7138DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7138DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7138DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7138DP-T1-GE3?
SI7138DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7138DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7138DP-T1-GE3?
For technical support, including SI7138DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7138DP-T1-GE3 requirements.
6.How does Aetrix verify that SI7138DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7138DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7138DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7138DP-T1-GE3?
All SI7138DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7138DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7138DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7138DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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