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Vishay Siliconix SI7170DP-T1-GE3
- Part No.:
- SI7170DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7170DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 40A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:8,387
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Product details
Overview
SI7170DP-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET in PowerPAK® SO-8 package, rated for 40 A continuous drain current at TC = 25 °C, with RDS(on) of 3.4 mΩ at VGS = 10 V and 4.3 mΩ at VGS = 4.5 V, used as a low-side switch in notebook PC core voltage regulation modules (VRM POL).
For engineers reviewing the SI7170DP-T1-GE3 datasheet, SI7170DP-T1-GE3 pinout, SI7170DP-T1-GE3 application, or SI7170DP-T1-GE3 equivalent, key selection criteria include its 30-V VDS rating, sub-5-mΩ on-resistance at 4.5-V drive, 29-nC total gate charge, junction-to-case thermal resistance of 2.1 °C/W, and compatibility with standard SO-8 PCB footprints.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for high-current, low-voltage switching in synchronous buck converters. Its design supports fast switching with 15 ns turn-on delay and 8 ns fall time at 10 V gate drive, while maintaining robust avalanche capability (40 A single-pulse IAS, 80 mJ EAS).
The device integrates a low-forward-voltage body diode (VSD = 0.74 V at IS = 3 A) and is 100 % Rg and avalanche tested. Thermal performance is enhanced by the exposed-drain PowerPAK SO-8 package, delivering DPAK-equivalent junction-to-case resistance (2.1 °C/W) in an SO-8 footprint.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; suitable for 24-V input and 12-V output VRM stages. |
| RDS(on) | 3.4 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 18 A DC load in notebook CPU core rails. |
| ID (cont.) | 40 A @ TC = 25 °C - Sustains high pulsed currents typical in VRM phase-leg operation. |
| Qg | 29 nC @ VGS = 4.5 V - Low gate charge reduces driver power and enables efficient 1–2 MHz switching. |
| RthJC | 2.1 °C/W - Enables direct thermal coupling to PCB copper; supports >30 W power dissipation with minimal heatsinking. |
| VGS(th) | 1.4–2.6 V - Ensures reliable enhancement-mode turn-on with standard logic-level gate drivers. |
| Ciss | 4355 pF - Input capacitance impacts gate drive loop stability and EMI filtering requirements. |
Pinout & Package
SI7170DP-T1-GE3 is housed in a leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm), featuring an exposed drain pad on the bottom for low-thermal-resistance PCB mounting. The package maintains pin compatibility with standard SO-8 footprints but replaces leads with solderable copper terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Common return node for channel current; tied to power ground plane in low-side configuration. |
| 2 (G) | Gate | Control terminal; requires <29 nC charge for full enhancement; sensitive to ESD per HBM 2 kV rating. |
| 3 (S) | Source | Second source connection; paralleled with Pin 1 to reduce source inductance in high-di/dt applications. |
| 4 (S) | Source | Third source connection; enhances current sharing and thermal spreading across source terminals. |
| 5 (D) | Drain | Main power output node; electrically and thermally connected to large PCB copper area via bottom-exposed pad. |
| 6 (D) | Drain | Secondary drain terminal; increases current-carrying capacity and reduces package inductance. |
| 7 (D) | Drain | Third drain terminal; supports high-current routing and improves thermal conduction to board. |
| 8 (D) | Drain | Fourth drain terminal; completes symmetric drain layout for balanced current distribution in VRM phases. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process | Enables 3.4 mΩ RDS(on) at 10 V in SO-8 footprint-2× lower on-resistance than comparable planar MOSFETs. |
| PowerPAK SO-8 package | Delivers 2.1 °C/W RthJC-matching DPAK thermal performance while fitting legacy SO-8 layouts. |
| 100 % Rg tested | Guarantees gate resistance ≤1.0 Ω, ensuring predictable gate drive timing and minimizing oscillation risk. |
| Avalanche-rated | Withstands 40 A single-pulse IAS and 80 mJ EAS-protects against inductive energy during hard-switching faults. |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC-enables use in environmentally regulated consumer electronics. |
Applications
| High-Efficiency Notebook CPU Core VRM | Low-Side Switch in Server DDR Memory Regulators |
|---|---|
Use Scenario: High-current, high-frequency synchronous buck converter supplying 0.8–1.5 V to Intel/AMD mobile processors. IC Role / Device Role: Low-side power switch handling up to 40 A continuous current with minimal conduction loss. Use Value: 3.4 mΩ RDS(on) at 10 V reduces I²R losses by >35 % versus 5.5 mΩ alternatives, improving VRM efficiency by 1.2 % at 20 A load. | Use Scenario: Point-of-load regulator powering DDR4/DDR5 memory subsystems in thin-and-light laptops. IC Role / Device Role: Synchronous rectifier operating at 500 kHz–1.5 MHz with 4.5-V gate drive from controller IC. Use Value: 4.3 mΩ RDS(on) at 4.5 V ensures stable operation with logic-level gate drivers, eliminating need for level-shifting circuitry. |
| Industrial PLC I/O Module Power Stage | USB-C PD Fast-Charging Secondary Side Switch |
Use Scenario: 24-V input buck converter delivering 3.3/5 V to isolated digital I/O circuits in programmable logic controllers. IC Role / Device Role: Low-side FET in non-isolated buck stage; subjected to repetitive surge currents during field-wiring transients. Use Value: 40 A pulsed drain rating (IDM = 70 A) and 80 mJ avalanche energy absorption prevent failure during 100-V line surges. | Use Scenario: Secondary-side synchronous rectifier in 45-W USB-C PD adapter, switching at 200–300 kHz. IC Role / Device Role: Output rectifier replacing Schottky diode to reduce forward drop and improve thermal margin. Use Value: Body diode VSD = 0.74 V at 3 A enables low-loss freewheeling during dead-time, reducing average rectifier loss by 0.4 W vs. 0.9-V Schottky. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30-V MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7850DP-T1-GE3 | RDS(on) = 2.8 mΩ @ 10 V; Qg = 34 nC; same PowerPAK SO-8 package | Higher current density; slightly higher gate drive requirement | Select when <3 mΩ on-resistance is required and gate drive capability supports +17 % Qg. |
| IRLML6344TRPBF | RDS(on) = 4.5 mΩ @ 4.5 V; SOT-23 package; ID = 4.3 A | Lower current rating; surface-mount compatible but not footprint-compatible | Use only in space-constrained, low-current (<5 A) designs where SO-8 footprint is unavailable. |
Compared with Si7850DP-T1-GE3, SI7170DP-T1-GE3 trades 0.6 mΩ higher RDS(on) for 5 nC lower gate charge-favoring high-frequency, medium-current VRM use. Versus IRLML6344TRPBF, SI7170DP-T1-GE3 delivers 9× higher current capacity and 2.1 °C/W thermal resistance versus ~120 °C/W-making it viable for sustained 40-A operation.
Availability
SI7170DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC VRM design, server memory regulation, and industrial PLC power stages requiring stable component supply, long-term lifecycle support, and Pb-free/halogen-free compliance.
Supply support for SI7170DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SI7170DP-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered specifically for high-efficiency, high-density DC-DC conversion in portable computing and enterprise infrastructure applications.
FAQ
What is the maximum continuous drain current rating for SI7170DP-T1-GE3 at 70 °C case temperature?
The SI7170DP-T1-GE3 is rated for 40 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating from the 40 A value at TC = 25 °C and is validated under steady-state conditions with proper PCB copper thermal mass. The device remains within safe operating area limits up to this current when mounted on a 1" × 1" FR4 board with adequate drain copper.
Does SI7170DP-T1-GE3 support logic-level gate drive at 3.3 V?
SI7170DP-T1-GE3 has a gate threshold voltage range of 1.4–2.6 V, enabling turn-on at 3.3 V; however, its RDS(on) is not characterized below VGS = 4.5 V. At 3.3 V, the device will conduct but with significantly higher on-resistance (>10 mΩ estimated), increasing conduction loss. For reliable low-RDS(on) operation, SI7170DP-T1-GE3 requires ≥4.5 V gate drive per datasheet specifications.
Can SI7170DP-T1-GE3 be mounted on a standard SO-8 land pattern?
Yes, SI7170DP-T1-GE3 uses the PowerPAK® SO-8 package, which shares identical pin count, pin spacing (1.27 mm), and outline dimensions with standard SO-8. Vishay confirms direct substitution on existing SO-8 footprints, though optimal thermal performance requires extending the drain pad area beyond the minimum SO-8 land pattern per Application Note AN821.
What is the body diode reverse recovery time (trr) of SI7170DP-T1-GE3?
The body diode reverse recovery time trr for SI7170DP-T1-GE3 is 34–65 ns, measured at IF = 10 A, dI/dt = 100 A/µs, and TJ = 25 °C. This fast recovery characteristic minimizes switching loss and voltage overshoot during synchronous rectification, especially in high-frequency VRM topologies where dead-time control is critical.
Is SI7170DP-T1-GE3 suitable for automotive applications?
No-SI7170DP-T1-GE3 is not qualified to AEC-Q101 or any automotive reliability standard. Vishay explicitly states that its products "are not designed for use in medical, life-saving, or life-sustaining applications," and no automotive-grade screening, testing, or qualification data is provided for SI7170DP-T1-GE3 in the referenced datasheet or application notes.
SI7170DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.4mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 100 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4355 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 48W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7170DP-T1-GE3 FAQ
1.How can I place an order for SI7170DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7170DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7170DP-T1-GE3 reliable?
The price and inventory of SI7170DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7170DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7170DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7170DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7170DP-T1-GE3?
SI7170DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7170DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7170DP-T1-GE3?
For technical support, including SI7170DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7170DP-T1-GE3 requirements.
6.How does Aetrix verify that SI7170DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7170DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7170DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7170DP-T1-GE3?
All SI7170DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7170DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7170DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7170DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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