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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7190DP-T1-GE3

Name: SI7190DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7190DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7190DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7190DP-T1-GE3.pdf

Description:: MOSFET N-CH 250V 18.4A PPAK SO-8

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Product details

Overview

SI7190DP-T1-GE3 from Vishay Siliconix is an N-channel 250-V TrenchFET® Power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 0.118 Ω at V_GS = 10 V, 18.4 A continuous drain current (T_J = 150 °C), and 32 nC total gate charge - optimized for primary-side switching in high-voltage DC-DC converters and industrial POL supplies.

For engineers reviewing the SI7190DP-T1-GE3 datasheet, SI7190DP-T1-GE3 pinout, SI7190DP-T1-GE3 application, or SI7190DP-T1-GE3 equivalent, key selection criteria include its 250-V V_DS, low thermal resistance (R_thJC = 1.0 °C/W), 100 % UIS-tested ruggedness, halogen-free/lead-free compliance, and compatibility with standard SO-8 PCB footprints.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve high voltage blocking with low on-resistance. Its design supports hard-switched operation up to 250 V with robust avalanche capability (E_AS = 2.4 mJ) and fast dynamic performance (t_d(off) = 24–42 ns depending on drive voltage).

The PowerPAK® SO-8 package integrates a thermally enhanced exposed-drain pad directly bonded to the PCB, enabling junction-to-case thermal resistance of 1.0 °C/W - matching DPAK performance while retaining SO-8 footprint compatibility and surface-mount reflow compatibility per JEDEC J-STD-020.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - supports primary-side switching in offline flyback, forward, and resonant converters up to 250 V DC bus.
R_DS(on)	0.118 Ω @ V_GS = 10 V - enables low conduction loss at 18.4 A continuous current, critical for high-efficiency POL and industrial SMPS.
Q_g	32 nC @ V_GS = 6 V - determines gate drive power requirement and switching speed in 6-V gate-drive systems.
R_thJC	1.0 °C/W - allows direct thermal coupling to PCB copper, enabling high-power dissipation without external heatsink in space-constrained designs.
E_AS	2.4 mJ - verified single-pulse avalanche energy ensures reliability under inductive load turn-off stress and transient overvoltage events.
I_D (continuous)	18.4 A @ T_C = 25 °C - defines maximum steady-state current handling when case temperature is maintained at 25 °C via PCB thermal management.
V_GS(th)	2–4 V - gate threshold range compatible with standard 5-V and 3.3-V logic-level drivers, supporting direct microcontroller interfacing.

Pinout & Package

PowerPAK® SO-8 is a leadless, surface-mount package with 8 terminals arranged in standard SO-8 footprint (6.15 mm × 5.15 mm). The exposed drain pad occupies the bottom center and provides primary thermal path to PCB.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Controls channel conduction; requires ≤ ±20 V drive; low input capacitance (C_iss = 2214 pF) reduces driver loading.
2 (S)	Source	Reference node for gate drive and current sensing; tied to power ground in most topologies.
3 (S)	Source	Second source terminal for reduced source inductance and improved current sharing in high-frequency switching.
4 (D)	Drain	High-side connection to input bus; electrically and thermally connected to large exposed bottom pad.
5 (D)	Drain	Second drain terminal enhancing current capacity and thermal spreading across PCB copper area.
6 (D)	Drain	Third drain terminal reinforcing thermal and electrical connection to PCB for high-current paths.
7 (D)	Drain	Fourth drain terminal completing low-impedance, low-inductance path to PCB ground plane or heatsink layer.
8 (G)	Gate	Secondary gate terminal reducing gate loop inductance and improving EMI performance in high-dV/dt applications.

Key Features

Feature	Design Value
TrenchFET® technology	Enables 250-V breakdown with 0.118 Ω R_DS(on), achieving higher power density than planar MOSFETs in same package.
100 % UIS tested	Guarantees ruggedness against unclamped inductive switching stress - essential for reliable operation in flyback and forward converters.
PowerPAK® SO-8 package	Delivers DPAK-level thermal performance (R_thJC = 1.0 °C/W) in SO-8 footprint, eliminating need for layout redesign when upgrading from standard SO-8.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - required for industrial, telecom, and consumer equipment sold in EU and global markets.
Exposed drain thermal pad	Provides direct thermal path from die to PCB, enabling >90 % of heat to be conducted through board copper rather than ambient convection.

Applications

Primary Side Switching	Industrial DC-DC Conversion
Use Scenario: High-voltage primary switch in 250-V-input isolated flyback converters for industrial power supplies. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input bus to transformer primary winding during PWM on-time. Use Value: 250-V V_DS rating and 2.4-mJ E_AS ensure safe operation under reflected output overvoltage and line surges without snubber circuitry.	Use Scenario: Output-stage synchronous rectifier or buck switch in 48-V input industrial POL modules powering FPGAs and ASICs. IC Role / Device Role / Timing Role: Low-loss, high-current switching element operating at 300–500 kHz with minimal conduction and switching loss. Use Value: 0.118 Ω R_DS(on) at 10 V drive reduces I²R losses below 40 mW at 10 A, improving efficiency by >1.2 % vs. comparable SO-8 MOSFETs.
Telecom Rectification	Motor Drive Half-Bridge
Use Scenario: OR-ing FET or hold-up switch in 48-V telecom rectifier modules requiring hot-swap and redundancy support. IC Role / Device Role / Timing Role: Bidirectional current control device managing power flow between redundant inputs and system bus. Use Value: Low R_DS(on) minimizes voltage drop (< 1.2 V at 10 A), preserving bus regulation margin; body diode V_SD = 0.8–1.2 V supports reverse-current blocking.	Use Scenario: High-side switch in 24–48-V brushed DC motor half-bridge drivers for factory automation actuators. IC Role / Device Role / Timing Role: Voltage-controlled current path enabling PWM-based speed control and dynamic braking. Use Value: 100 % UIS testing ensures survival during motor inductive kickback; 30-A pulsed drain rating supports peak stall currents without failure.

Primary Side Switching

Industrial DC-DC Conversion

Use Scenario: High-voltage primary switch in 250-V-input isolated flyback converters for industrial power supplies.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input bus to transformer primary winding during PWM on-time.

Use Value: 250-V V_DS rating and 2.4-mJ E_AS ensure safe operation under reflected output overvoltage and line surges without snubber circuitry.

Use Scenario: Output-stage synchronous rectifier or buck switch in 48-V input industrial POL modules powering FPGAs and ASICs.

IC Role / Device Role / Timing Role: Low-loss, high-current switching element operating at 300–500 kHz with minimal conduction and switching loss.

Use Value: 0.118 Ω R_DS(on) at 10 V drive reduces I²R losses below 40 mW at 10 A, improving efficiency by >1.2 % vs. comparable SO-8 MOSFETs.

Telecom Rectification

Motor Drive Half-Bridge

Use Scenario: OR-ing FET or hold-up switch in 48-V telecom rectifier modules requiring hot-swap and redundancy support.

IC Role / Device Role / Timing Role: Bidirectional current control device managing power flow between redundant inputs and system bus.

Use Value: Low R_DS(on) minimizes voltage drop (< 1.2 V at 10 A), preserving bus regulation margin; body diode V_SD = 0.8–1.2 V supports reverse-current blocking.

Use Scenario: High-side switch in 24–48-V brushed DC motor half-bridge drivers for factory automation actuators.

IC Role / Device Role / Timing Role: Voltage-controlled current path enabling PWM-based speed control and dynamic braking.

Use Value: 100 % UIS testing ensures survival during motor inductive kickback; 30-A pulsed drain rating supports peak stall currents without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 250-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHP25N25C	TO-220 package; R_DS(on) = 0.125 Ω @ 10 V; higher R_thJA (62 °C/W); no leadless thermal pad.	Requires heatsink mounting; unsuitable for ultra-thin or PCB-only thermal designs.	Select when mechanical mounting and forced-air cooling are available; avoid for compact SMT-only layouts.
IRFP4668PBF	TO-247 package; R_DS(on) = 0.115 Ω @ 10 V; higher Q_g (120 nC); larger footprint and height.	Designed for high-power discrete inverters; incompatible with SO-8 land patterns.	Choose only for >100-W systems needing superior thermal mass; not a drop-in replacement for SI7190DP-T1-GE3.

Compared with SiHP25N25C and IRFP4668PBF, SI7190DP-T1-GE3 offers superior PCB-integrated thermal performance and SO-8 footprint compatibility - making it optimal for space-constrained, high-density industrial and telecom power modules where layout reuse and thermal management via copper are critical.

Availability

SI7190DP-T1-GE3 is available at Aetrix Electronics and suitable for industrial DC-DC conversion, primary-side switching in offline power supplies, and telecom rectification requiring stable component supply, long-term lifecycle support, and consistent Pb-free/halogen-free compliance.

Supply support for SI7190DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SI7190DP-T1-GE3 belongs to Vishay's TrenchFET® Power MOSFET product line, engineered for high-voltage, high-efficiency switching in industrial, telecom, and computing power supplies where thermal performance and ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for SI7190DP-T1-GE3 at 70 °C case temperature?

The SI7190DP-T1-GE3 supports 14.7 A continuous drain current at T_C = 70 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits under sustained power dissipation; actual usable current depends on PCB copper area, airflow, and ambient conditions. The SI7190DP-T1-GE3 datasheet confirms this value under "Continuous Drain Current (T_J = 150 °C)" with test condition TC = 70 °C.

Does SI7190DP-T1-GE3 require a gate resistor for reliable switching in a 500-kHz flyback converter?

Yes - while the SI7190DP-T1-GE3 has low gate resistance (R_g = 0.2–1.8 Ω), a series gate resistor (typically 5–15 Ω) is recommended to damp ringing, control dV/dt, and prevent shoot-through in half-bridge configurations. The SI7190DP-T1-GE3's Q_g = 32 nC at 6 V and C_iss = 2214 pF make gate drive strength and resistor selection critical for clean 500-kHz switching.

Can SI7190DP-T1-GE3 be mounted on a standard SO-8 footprint without modification?

Yes - the SI7190DP-T1-GE3 uses the PowerPAK® SO-8 package, which maintains identical pin count, spacing (1.27 mm pitch), and outline (6.15 mm × 5.15 mm) as standard SO-8. Vishay explicitly states it can be substituted directly onto existing SO-8 land patterns, though thermal performance improves significantly with extended drain copper per Application Note AN821.

What is the body diode reverse recovery time (t_rr) of SI7190DP-T1-GE3, and how does it affect synchronous rectification?

The SI7190DP-T1-GE3 exhibits t_rr = 87–131 ns at I_F = 3.5 A, dI/dt = 100 A/µs, and T_J = 25 °C. This fast recovery minimizes reverse recovery loss and EMI in synchronous rectifier applications, but the SI7190DP-T1-GE3 is not optimized as a dedicated sync-FET - its V_SD = 0.8–1.2 V and Q_rr = 300–450 nC indicate suitability for moderate-frequency freewheeling, not ultra-high-frequency zero-voltage switching.

Is SI7190DP-T1-GE3 qualified for automotive applications per AEC-Q101?

No - the SI7190DP-T1-GE3 is not AEC-Q101 qualified. It is rated for industrial temperature range (−55 °C to +150 °C) and intended for industrial, telecom, and computing power supplies. For automotive use, Vishay offers AEC-Q101-qualified variants such as the SQJQ480E, but SI7190DP-T1-GE3 itself carries no automotive qualification documentation.

SI7190DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 18.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 118mOhm @ 4.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2214 pF @ 125 V

FET Feature:: -

Power Dissipation (Max):: 5.4W (Ta), 96W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7190DP-T1-GE3 FAQ

1.How can I place an order for SI7190DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7190DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7190DP-T1-GE3 reliable?

The price and inventory of SI7190DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7190DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7190DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7190DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7190DP-T1-GE3?

SI7190DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7190DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7190DP-T1-GE3?

For technical support, including SI7190DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7190DP-T1-GE3 requirements.

6.How does Aetrix verify that SI7190DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7190DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7190DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7190DP-T1-GE3?

All SI7190DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7190DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7190DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7190DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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