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Vishay Siliconix SI7194DP-T1-GE3
- Part No.:
- SI7194DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7194DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 25V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,046
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Product details
Overview
SI7194DP-T1-GE3 from Vishay Siliconix is an N-channel 25-V TrenchFET® Power MOSFET in PowerPAK® SO-8 package, rated for 60 A continuous drain current at TC = 25 °C, with RDS(on) of 0.002 Ω at VGS = 10 V and 42 nC total gate charge. It serves as a low-side switch in high-current CPU/GPU core DC/DC converters for gaming and desktop systems.
For engineers reviewing the SI7194DP-T1-GE3 datasheet, SI7194DP-T1-GE3 pinout, SI7194DP-T1-GE3 application, or SI7194DP-T1-GE3 equivalent, key selection criteria include its 25-V VDS rating, sub-2.5-mΩ on-resistance at 4.5 V drive, 100% avalanche testing, thermal resistance of 1.5 °C/W (junction-to-case), and lead-free/halogen-free PowerPAK® SO-8 packaging.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low RDS(on) and fast switching in synchronous buck topologies. Its gate charge profile (Qg = 42–65 nC at 4.5 V, Qgd = 9.7 nC) supports efficient gate driving at high frequencies while minimizing switching losses.
The device features a robust body diode with trr = 41–80 ns and Qrr = 43–90 nC, enabling reliable reverse recovery in hard-switched low-side configurations. Thermal design is anchored by RthJC = 1.5 °C/W max and package-limited 60-A ID rating at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum blocking voltage compatible with 24-V input rails and transient margin in point-of-load converters |
| RDS(on) | 0.002 Ω at VGS = 10 V - Enables <120 mW conduction loss at 60 A, critical for high-efficiency CPU/GPU power stages |
| ID (continuous) | 60 A at TC = 25 °C - Package-limited current handling suitable for multi-phase VRMs delivering >300 W per phase |
| Qg | 42 nC at VGS = 4.5 V - Low gate charge allows efficient drive from standard PWM controllers without external buffers |
| RthJC | 1.5 °C/W max - Enables direct heatsink mounting for thermal management in compact VRM layouts |
| VGS(th) | 1.0–2.6 V - Ensures clean turn-on with 3.3-V or 5-V gate drivers and avoids spurious switching near ground |
| trr / Qrr | 41–80 ns / 43–90 nC - Predictable body diode recovery behavior reduces shoot-through risk during dead-time transitions |
Pinout & Package
PowerPAK® SO-8 is a leadless surface-mount package with exposed copper drain pads on the bottom side for enhanced thermal performance. The package measures 6.15 mm × 5.15 mm and integrates four parallel drain terminals to support high-current routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Main source connection; tied to power ground plane; multiple pins reduce source inductance in high-di/dt switching |
| 2 (G) | Gate | Single gate input; low Rg (0.2–1.8 Ω) enables stable gate control with minimal ringing |
| 3 (S) | Source | Secondary source terminal; electrically identical to Pin 1, improves current sharing and thermal spreading |
| 4 (G) | Gate | Second gate terminal; used for Kelvin gate sensing or paralleling; not internally connected to Pin 2 |
| 5–8 (D) | Drain | Four parallel drain terminals; all internally connected to the die's drain metallization; provide low-inductance, high-current path to input capacitor |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers industry-leading RDS(on) × Qg figure-of-merit for 25-V MOSFETs, reducing combined conduction and switching losses |
| 100 % Rg tested | Guarantees gate resistance between 0.2 Ω and 1.8 Ω, ensuring predictable gate drive timing and damping behavior |
| 100 % avalanche tested | Validates ruggedness against inductive energy spikes up to 125 mJ, essential for unregulated input transients in VRMs |
| Halogen-free & Pb-free | Meets IPC/JEDEC J-STD-609A Class 1 and RoHS Directive 2011/65/EU for environmentally compliant manufacturing |
| Exposed drain paddle | Enables direct thermal interface to PCB copper or heatsink, achieving RthJA = 18–23 °C/W on 1"×1" FR4 board |
Applications
| Gaming Desktop VRM | High-Performance Laptop CPU Regulator |
|---|---|
Use Scenario: Dual-phase 24-V input buck converter supplying up to 400 W to AMD Ryzen or Intel Core i9 processors in enthusiast gaming desktops. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switching at 300–600 kHz with precise dead-time control. Use Value: Sub-2-mΩ RDS(on) minimizes conduction loss under 60-A peak load, improving full-load efficiency by ≥1.2% versus 3-mΩ alternatives. | Use Scenario: Compact 3-phase VRM on thin-and-light laptop motherboard powering mobile Core i7 CPUs with dynamic current up to 120 A peak. IC Role / Device Role / Timing Role: Low-side switch operating with 4.5-V gate drive from integrated PWM controller; handles high di/dt during turbo boost transitions. Use Value: 42-nC Qg at 4.5 V enables clean switching with minimal gate driver power consumption and reduced EMI generation. |
| GPU Core Power Stage | AI Accelerator Board Supply |
Use Scenario: Single-phase 12-V input buck stage delivering 200+ W to NVIDIA RTX GPU cores in workstations and render farms. IC Role / Device Role / Timing Role: Low-side MOSFET in high-frequency (≥1 MHz) synchronous rectification; co-packaged with high-side Si7193DP. Use Value: Matched body diode recovery (trr = 41–80 ns) with complementary high-side ensures balanced dead-time margins and eliminates cross-conduction risk. | Use Scenario: Multi-phase 12-V input VRM on PCIe-based AI accelerator card powering ASICs requiring stable 0.8–1.2 V at up to 800 A aggregate. IC Role / Device Role / Timing Role: Low-side switch in each phase, thermally coupled to internal copper planes for passive cooling. Use Value: RthJC = 1.5 °C/W allows junction temperature rise <25 °C at 60 A with minimal heatsinking-critical for dense, fanless board layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 25-V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6242PBF | RDS(on) = 0.0022 Ω @ 10 V; Qg = 36 nC; PowerPAK® 1212-8 package (smaller footprint, higher RthJA) | Lower gate charge suits ultra-high-frequency (>1 MHz) designs but lower current rating (40 A) limits use in >300-W phases | Select when board space is constrained and switching frequency exceeds 800 kHz; verify thermal margin with RthJA = 40 °C/W. |
| SIS890DN-T1-GE3 | RDS(on) = 0.0018 Ω @ 10 V; Qg = 52 nC; same PowerPAK® SO-8; higher VGS(th) range (1.2–2.8 V) | Better conduction loss at high current but slower switching due to higher Qg; requires stronger gate driver for 60-A operation | Prefer for maximum efficiency at steady-state loads >50 A; avoid in burst-mode or light-load optimized designs where Qg dominates loss. |
Compared with IRLHS6242PBF and SIS890DN-T1-GE3, SI7194DP-T1-GE3 offers the optimal balance of low RDS(on), moderate Qg, and proven 60-A capability in PowerPAK® SO-8-making it the preferred choice for mainstream high-power VRMs where thermal reliability and drive simplicity are prioritized over extreme frequency or minimal footprint.
Availability
SI7194DP-T1-GE3 is available at Aetrix Electronics and suitable for gaming desktop VRMs, GPU core power stages, and AI accelerator board supplies requiring stable component supply, long-term lifecycle assurance, and traceable halogen-free sourcing.
Supply support for SI7194DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.
The Si7194DP product line targets high-current, low-voltage synchronous buck converters in computing and graphics applications, engineered for minimal RDS(on) × Qg trade-off and robust avalanche performance in demanding VRM environments.
FAQ
What is the maximum continuous drain current rating for SI7194DP-T1-GE3?
The SI7194DP-T1-GE3 is rated for 60 A continuous drain current at case temperature TC = 25 °C, limited by package thermal capacity-not silicon. At TC = 70 °C, the rating remains 60 A, but ambient-limited ratings drop to 30 A at TA = 70 °C on a 1" × 1" FR4 board. Derating curves confirm usable current up to 45 A at TC = 100 °C.
Does SI7194DP-T1-GE3 support 4.5-V gate drive in high-current applications?
Yes, SI7194DP-T1-GE3 specifies RDS(on) = 0.0025 Ω at VGS = 4.5 V and ID = 20 A, validated across temperature. Its low threshold voltage (1.0–2.6 V) and 42 nC Qg at 4.5 V make it fully compatible with 3.3-V and 4.5-V PWM controllers in modern VRMs-no level-shifting required.
Is SI7194DP-T1-GE3 pin-compatible with other PowerPAK® SO-8 MOSFETs like Si7193DP?
Yes, SI7194DP-T1-GE3 shares identical PowerPAK® SO-8 mechanical dimensions, pad layout, and pinout (S-G-S-G-D-D-D-D) with Si7193DP-T1-GE3 and other Vishay devices in this family. This enables direct layout reuse in complementary high-side/low-side VRM designs without PCB revision.
What thermal resistance values apply to SI7194DP-T1-GE3 in typical mounting conditions?
SI7194DP-T1-GE3 has RthJC = 1.0–1.5 °C/W (junction-to-case, steady state) and RthJA = 18–23 °C/W (junction-to-ambient, t ≤ 10 s on 1" × 1" FR4). For board-level thermal design, the exposed drain paddle must be soldered to ≥2 oz copper thermal pad with ≥4 vias to internal ground planes to achieve published RthJC.
How is avalanche ruggedness verified for SI7194DP-T1-GE3?
SI7194DP-T1-GE3 undergoes 100 % single-pulse avalanche testing per JEDEC JESD24-11, with guaranteed IAS = 50 A and EAS = 125 mJ at TJ = 25 °C. This validation ensures reliable operation during inductive switching events such as load dump or phase current reversal in VRMs.
SI7194DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 145 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6590 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.4W (Ta), 83W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7194DP-T1-GE3 FAQ
1.How can I place an order for SI7194DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7194DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7194DP-T1-GE3 reliable?
The price and inventory of SI7194DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7194DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7194DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7194DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7194DP-T1-GE3?
SI7194DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7194DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7194DP-T1-GE3?
For technical support, including SI7194DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7194DP-T1-GE3 requirements.
6.How does Aetrix verify that SI7194DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7194DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7194DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7194DP-T1-GE3?
All SI7194DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7194DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7194DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7194DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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