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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7196DP-T1-GE3

Name: SI7196DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7196DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7196DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7196DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 16A PPAK SO-8

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Product details

Overview

SI7196DP-T1-GE3 from Vishay Siliconix is an N-channel 30-V (D-S) Power MOSFET in PowerPAK® SO-8 package, optimized for high-efficiency synchronous buck converters. It delivers R_DS(on) = 0.011 Ω at V_GS = 10 V and 0.0145 Ω at V_GS = 4.5 V, supports 16 A continuous drain current (package-limited), and features extremely low Q_gd for minimized switching losses in notebook core voltage regulation.

For engineers reviewing the SI7196DP-T1-GE3 datasheet, SI7196DP-T1-GE3 pinout, SI7196DP-T1-GE3 application, or SI7196DP-T1-GE3 equivalent, key selection criteria include its halogen-free and lead-free compliance, verified 100 % R_g and avalanche testing, thermal performance matching DPAK (R_thJC = 2.4 °C/W), and compatibility with standard SO-8 PCB footprints despite its leadless construction.

Technical Context

This MOSFET employs Vishay's WFET® technology to achieve ultra-low gate-drain charge (Q_gd = 4.3 nC typ.) and total gate charge (Q_g = 13.2 nC typ. at V_GS = 4.5 V), enabling high-frequency operation in DC/DC converters. Its threshold voltage (V_GS(th) = 1.0–3.0 V) ensures robust turn-on with 4.5-V logic-level drive.

The device integrates a body diode with t_rr = 25–40 ns and Q_rr = 18–30 nC, supporting efficient synchronous rectification. Thermal design leverages the exposed drain pad of the PowerPAK SO-8 for direct board heat sinking, achieving R_thJA = 21 °C/W (typ.) on 1" × 1" FR4.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 3.3 V/5 V input rail applications
R_DS(on)	0.011 Ω @ V_GS = 10 V - Enables <1.3 W conduction loss at 12 A in high-side switch position
I_D (continuous)	16 A (T_C = 25 °C) - Package-limited current rating suitable for notebook CPU VRMs
Q_g	13.2 nC @ V_GS = 4.5 V - Low gate charge reduces driver power and enables >1 MHz switching
R_thJC	2.4 °C/W (typ.) - Thermal resistance equivalent to DPAK, enabling high-power density layout
Body diode t_rr	25–40 ns - Fast recovery minimizes shoot-through risk and reverse recovery loss in sync-buck
Package	PowerPAK® SO-8 - Leadless, SO-8 footprint-compatible package with exposed drain pad for thermal enhancement

Pinout & Package

SI7196DP-T1-GE3 is housed in a leadless PowerPAK® SO-8 package (5.15 mm × 6.15 mm), featuring an exposed copper drain pad on the bottom side for low-impedance thermal path to the PCB. The top-side pinout matches standard SO-8: pins 1–4 are Source–Source–Source–Gate; pins 5–8 are Drain–Drain–Drain–Drain.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection for internal parallel die; low-inductance return path for high di/dt currents
4	Gate (G)	Single gate input terminal; 100 % R_g tested for consistent switching behavior
5, 6, 7, 8	Drain (D)	Parallel-connected drain terminals tied to exposed bottom pad; primary thermal and current path to PCB

Key Features

Feature	Design Value
WFET® Technology	Reduces Q_gd to 4.3 nC (typ.), cutting Miller-induced switching delay and improving EMI in high-dV/dt environments
Halogen-free & Pb-free	Complies with IEC 61249-2-21 and RoHS; eliminates hazardous substances without compromising reliability
100 % Avalanche Tested	Guarantees ruggedness against inductive switching transients up to I_AS = 20 A and E_AS = 20 mJ
PowerPAK SO-8 Footprint	Direct drop-in replacement for standard SO-8 layouts; no PCB redesign needed while delivering DPAK-level thermal performance
Exposed Drain Pad	Enables junction-to-board thermal resistance as low as 2.4 °C/W, critical for thermally constrained notebook chassis

Applications

Core Voltage High-Side Switch	Notebook System Power Low-Side
Use Scenario: Primary high-side switch in multiphase synchronous buck converter supplying CPU core voltage (0.8–1.5 V). IC Role / Device Role / Timing Role: High-side N-channel MOSFET driven by dedicated gate driver; conducts during PWM high-time with fast turn-on/turn-off controlled by Q_g and R_DS(on). Use Value: 0.011 Ω R_DS(on) at 10 V reduces conduction loss below 1.3 W at 12 A, while 13.2 nC Q_g at 4.5 V enables stable 1 MHz+ operation with minimal driver stress.	Use Scenario: Low-side synchronous rectifier in same CPU VRM, replacing Schottky diode to improve efficiency. IC Role / Device Role / Timing Role: Low-side N-channel MOSFET operating complementary to high-side; body diode conducts during dead time, then channel carries current during active low-time. Use Value: Body diode t_rr = 25–40 ns and Q_rr = 18–30 nC minimize reverse recovery loss and voltage spikes, while 0.0145 Ω R_DS(on) at 4.5 V ensures low forward drop under logic-level gate drive.
Point-of-Load DC/DC Converter	GPU Core Voltage Regulation
Use Scenario: Compact 3.3 V or 5 V input to 1.0–1.2 V output converter on graphics card PCB. IC Role / Device Role / Timing Role: High-efficiency power switch handling peak currents up to 16 A; operates in hard-switched synchronous topology with tight thermal constraints. Use Value: PowerPAK SO-8's R_thJC = 2.4 °C/W allows sustained 16 A operation without external heatsink, and halogen-free construction meets stringent GPU module environmental requirements.	Use Scenario: Dual-phase or triple-phase VRM supplying dynamic GPU core voltage (0.9–1.3 V) with rapid load transient response. IC Role / Device Role / Timing Role: Parallel-configured high-side switch; multiple SI7196DP-T1-GE3 devices share current to handle >30 A peak loads. Use Value: Matched R_DS(on) and Q_g across units ensure balanced current sharing; 100 % R_g test guarantees consistent gate timing across paralleled devices.

Core Voltage High-Side Switch

Notebook System Power Low-Side

Use Scenario: Primary high-side switch in multiphase synchronous buck converter supplying CPU core voltage (0.8–1.5 V).

IC Role / Device Role / Timing Role: High-side N-channel MOSFET driven by dedicated gate driver; conducts during PWM high-time with fast turn-on/turn-off controlled by Q_g and R_DS(on).

Use Value: 0.011 Ω R_DS(on) at 10 V reduces conduction loss below 1.3 W at 12 A, while 13.2 nC Q_g at 4.5 V enables stable 1 MHz+ operation with minimal driver stress.

Use Scenario: Low-side synchronous rectifier in same CPU VRM, replacing Schottky diode to improve efficiency.

IC Role / Device Role / Timing Role: Low-side N-channel MOSFET operating complementary to high-side; body diode conducts during dead time, then channel carries current during active low-time.

Use Value: Body diode t_rr = 25–40 ns and Q_rr = 18–30 nC minimize reverse recovery loss and voltage spikes, while 0.0145 Ω R_DS(on) at 4.5 V ensures low forward drop under logic-level gate drive.

Point-of-Load DC/DC Converter

GPU Core Voltage Regulation

Use Scenario: Compact 3.3 V or 5 V input to 1.0–1.2 V output converter on graphics card PCB.

IC Role / Device Role / Timing Role: High-efficiency power switch handling peak currents up to 16 A; operates in hard-switched synchronous topology with tight thermal constraints.

Use Value: PowerPAK SO-8's R_thJC = 2.4 °C/W allows sustained 16 A operation without external heatsink, and halogen-free construction meets stringent GPU module environmental requirements.

Use Scenario: Dual-phase or triple-phase VRM supplying dynamic GPU core voltage (0.9–1.3 V) with rapid load transient response.

IC Role / Device Role / Timing Role: Parallel-configured high-side switch; multiple SI7196DP-T1-GE3 devices share current to handle >30 A peak loads.

Use Value: Matched R_DS(on) and Q_g across units ensure balanced current sharing; 100 % R_g test guarantees consistent gate timing across paralleled devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30-V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 0.0075 Ω @ 10 V (lower), Q_g = 20.5 nC @ 10 V (higher), same PowerPAK SO-8 package	Better conduction loss but higher switching loss; suited for lower-frequency, high-current apps	Choose Si7157DP-T1-GE3 when minimizing I²R loss dominates over switching frequency constraints
IRF7478PBF	Standard SO-8 (leaded), R_DS(on) = 0.013 Ω @ 10 V, R_thJC = 16 °C/W (much higher), no halogen-free certification	Higher thermal resistance requires larger copper area or heatsinking; not drop-in due to leaded vs. leadless construction	Choose IRF7478PBF only if legacy SO-8 tooling prohibits PowerPAK adoption and thermal budget permits 43 °C junction rise

Compared with Si7157DP-T1-GE3, SI7196DP-T1-GE3 trades 27 % higher R_DS(on) for 35 % lower Q_g, favoring high-frequency operation; versus IRF7478PBF, it delivers DPAK-equivalent thermal performance in SO-8 footprint with halogen-free compliance-critical for modern notebook OEMs.

Availability

SI7196DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook VRMs, GPU power delivery, and point-of-load DC/DC converters requiring stable component supply, halogen-free compliance, and high thermal reliability in space-constrained designs.

Supply support for SI7196DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI7196DP-T1-GE3 belongs to Vishay's PowerPAK® SO-8 N-channel MOSFET product line, engineered specifically for high-density, high-efficiency DC/DC conversion in portable computing and graphics applications where thermal management and environmental compliance are critical.

FAQ

What is the maximum continuous drain current rating for SI7196DP-T1-GE3?

The SI7196DP-T1-GE3 has a continuous drain current rating of 16 A at T_C = 25 °C, limited by package thermal capability (not silicon). At T_C = 70 °C, the rating remains 16 A; at T_A = 25 °C, it is derated to 15.8 A per datasheet footnote b. This reflects its PowerPAK SO-8 package's superior thermal performance relative to standard SO-8.

Is SI7196DP-T1-GE3 compatible with standard SO-8 PCB footprints?

Yes, SI7196DP-T1-GE3 uses the PowerPAK® SO-8 package, which maintains identical outline dimensions and pin assignments as the standard SO-8. Its leadless construction places drain terminals on the bottom-side exposed pad, but the top-side pin locations (1–8) match exactly-enabling direct placement on existing SO-8 land patterns without layout changes.

Does SI7196DP-T1-GE3 require special reflow soldering profiles?

Yes, SI7196DP-T1-GE3 is a leadless PowerPAK SO-8 device and requires Pb-free reflow profile per Vishay document 73257: peak temperature 255 °C max, time above 217 °C must be 60–150 s, and ramp-down rate ≤6 °C/s. Manual soldering with iron is not recommended due to thermal mass and bottom-side solder joint verification challenges.

What is the significance of "100 % Rg tested" for SI7196DP-T1-GE3?

"100 % R_g tested" means every SI7196DP-T1-GE3 unit undergoes production screening for gate resistance (R_g = 1.8–3.0 Ω), ensuring tight parametric distribution. This guarantees consistent gate drive timing and switching behavior across units-critical for paralleled operation and predictable EMI in high-frequency VRMs using SI7196DP-T1-GE3.

How does the body diode performance of SI7196DP-T1-GE3 impact synchronous rectification?

The SI7196DP-T1-GE3 body diode has t_rr = 25–40 ns and Q_rr = 18–30 nC, enabling clean commutation in synchronous buck topologies. Low Q_rr reduces reverse recovery current spikes and associated losses, while fast t_rr minimizes dead-time overlap-directly improving efficiency and reducing voltage overshoot at the SI7196DP-T1-GE3 switch node.

SI7196DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: WFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1577 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 41.6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7196DP-T1-GE3 FAQ

1.How can I place an order for SI7196DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7196DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7196DP-T1-GE3 reliable?

The price and inventory of SI7196DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7196DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7196DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7196DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7196DP-T1-GE3?

SI7196DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7196DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7196DP-T1-GE3?

For technical support, including SI7196DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7196DP-T1-GE3 requirements.

6.How does Aetrix verify that SI7196DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7196DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7196DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7196DP-T1-GE3?

All SI7196DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7196DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7196DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7196DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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