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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Vishay Siliconix SI7216DN-T1-GE3

Name: SI7216DN-T1-GE3
Brand: Vishay Siliconix
SKU: SI7216DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7216DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FET, MOSFET Arrays

Package:: PowerPAK® 1212-8 Dual

Datasheet:: SI7216DN-T1-GE3.pdf

Description:: MOSFET 2N-CH 40V 6A PPAK 1212

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Product details

Overview

SI7216DN-T1-GE3 from Vishay Siliconix is a dual N-channel 40-V TrenchFET® Power MOSFET in PowerPAK® 1212-8 package, delivering R_DS(on) = 0.032 Ω at V_GS = 10 V and 0.039 Ω at V_GS = 4.5 V, with 5.5 nC total gate charge and 6 A continuous drain current (T_C = 25 °C), used for primary-side switching and synchronous rectification in compact DC-DC converters.

For engineers reviewing the SI7216DN-T1-GE3 datasheet, SI7216DN-T1-GE3 pinout, SI7216DN-T1-GE3 application, or SI7216DN-T1-GE3 equivalent, key selection criteria include its dual-channel layout, low-profile 1.07 mm height, halogen-free and RoHS-compliant construction, thermal resistance of 4.5 °C/W (junction-to-case), and validated 100 % R_g and UIS testing.

Technical Context

This device integrates two independent N-channel enhancement-mode MOSFETs sharing a common source configuration per channel, with separate gate and drain terminals. Its TrenchFET® silicon enables low on-resistance and fast switching, supported by C_iss = 670 pF, C_oss = 90 pF, and C_rss = 50 pF at V_DS = 20 V.

The PowerPAK 1212-8 package features exposed copper drain pads on the bottom side for direct thermal conduction to the PCB, achieving R_thJC = 4.5 °C/W (typical) and R_thJA = 38 °C/W (t ≤ 10 s), enabling high-current operation without external heatsinks in space-constrained layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage for primary-side switch or SR applications up to 36-V input rails.
R_DS(on) @ V_GS = 10 V	0.032 Ω - Enables <1 W conduction loss at 6 A, critical for high-efficiency 12-V/48-V DC-DC stages.
R_DS(on) @ V_GS = 4.5 V	0.039 Ω - Ensures robust turn-on with standard logic-level gate drivers in synchronous buck controllers.
Q_g (typ.)	5.5 nC - Reduces gate drive power and switching losses in high-frequency (>500 kHz) topologies.
I_D (continuous, T_C = 25 °C)	6 A - Supports ≥12 W output in compact point-of-load converters with minimal thermal derating.
R_thJC (typ.)	4.5 °C/W - Allows >15 W dissipation with modest PCB copper area, eliminating need for discrete thermal vias in many designs.
Package	PowerPAK® 1212-8 - 3.3 mm × 3.3 mm footprint, 1.07 mm profile, leadless, halogen-free, RoHS-compliant.

Pinout & Package

PowerPAK® 1212-8 is a leadless surface-mount package with eight terminals arranged in a 3.3 mm × 3.3 mm outline and 0.65 mm pitch. The bottom-side drain pads provide low-thermal-resistance path to PCB copper. Package height is 1.07 mm maximum.

Pin/Terminal	Circuit Role	Design Meaning
1	Source 1 (S1)	Source terminal of first N-channel MOSFET; tied to local ground or low-side return path.
2	Gate 1 (G1)	Control input for first MOSFET; requires 1–3 V threshold margin above driver's low-state voltage.
3	Source 2 (S2)	Source terminal of second N-channel MOSFET; electrically isolated from S1 unless externally connected.
4	Gate 2 (G2)	Independent control input for second MOSFET; supports dual-phase or complementary switching schemes.
5, 6	Drain 1 (D1)	Shared drain connection for first MOSFET; soldered directly to PCB copper for thermal and current handling.
7, 8	Drain 2 (D2)	Shared drain connection for second MOSFET; physically separate pad from D1 for isolation and layout flexibility.

Key Features

Feature	Design Value
TrenchFET® silicon technology	Delivers ultra-low R_DS(on) and high cell density, enabling 6 A current handling in 3.3 mm × 3.3 mm footprint.
PowerPAK® 1212-8 package	Exposes drain copper on bottom side for direct thermal coupling to PCB, reducing R_thJC to 4.5 °C/W (typical).
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and avalanche energy tolerance up to 5 mJ per pulse.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC, supporting environmentally regulated industrial and telecom equipment.
Low 1.07 mm profile	Enables use in ultra-thin power modules and stacked PCB assemblies where Z-height is constrained.

Applications

Primary-Side Switching	Synchronous Rectification
Use Scenario: High-efficiency isolated flyback or forward converter operating at 100–500 kHz with 24–48 V input. IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer into transformer; driven by PWM controller with 10-V gate signal. Use Value: Low R_DS(on) minimizes conduction loss; low Q_g reduces gate drive loss; thermal performance sustains >90 % efficiency at full load.	Use Scenario: Secondary-side rectification in 12-V output LLC resonant converter for server VRMs. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by dedicated SR controller with precise timing relative to transformer voltage zero-crossing. Use Value: 0.039 Ω R_DS(on) at 4.5 V gate drive enables >3 % efficiency gain over 40-V Schottky; dual-channel allows interleaved or redundant SR paths.
Compact Point-of-Load Converter	Redundant Power Path
Use Scenario: 5-V/6-A step-down regulator on dense FPGA or ASIC power plane with limited board area. IC Role / Device Role / Timing Role: High-side switch in integrated buck stage; paired with external high-side driver or controller IC. Use Value: Dual-channel layout permits single-package implementation of high-side + low-side or parallel-phase configuration, cutting component count and layout area by 30 %.	Use Scenario: Telecom shelf power system requiring fault-tolerant 12-V distribution with hot-swap capability. IC Role / Device Role / Timing Role: Load switch for redundant 12-V rail; controlled via PMBus or GPIO to enable/disable path during maintenance or failure. Use Value: Independent gate control (G1/G2) allows staggered turn-on to limit inrush; low R_DS(on) ensures <75 mV drop at 6 A, meeting tight voltage regulation specs.

Primary-Side Switching

Synchronous Rectification

Use Scenario: High-efficiency isolated flyback or forward converter operating at 100–500 kHz with 24–48 V input.

IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer into transformer; driven by PWM controller with 10-V gate signal.

Use Value: Low R_DS(on) minimizes conduction loss; low Q_g reduces gate drive loss; thermal performance sustains >90 % efficiency at full load.

Use Scenario: Secondary-side rectification in 12-V output LLC resonant converter for server VRMs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by dedicated SR controller with precise timing relative to transformer voltage zero-crossing.

Use Value: 0.039 Ω R_DS(on) at 4.5 V gate drive enables >3 % efficiency gain over 40-V Schottky; dual-channel allows interleaved or redundant SR paths.

Compact Point-of-Load Converter

Redundant Power Path

Use Scenario: 5-V/6-A step-down regulator on dense FPGA or ASIC power plane with limited board area.

IC Role / Device Role / Timing Role: High-side switch in integrated buck stage; paired with external high-side driver or controller IC.

Use Value: Dual-channel layout permits single-package implementation of high-side + low-side or parallel-phase configuration, cutting component count and layout area by 30 %.

Use Scenario: Telecom shelf power system requiring fault-tolerant 12-V distribution with hot-swap capability.

IC Role / Device Role / Timing Role: Load switch for redundant 12-V rail; controlled via PMBus or GPIO to enable/disable path during maintenance or failure.

Use Value: Independent gate control (G1/G2) allows staggered turn-on to limit inrush; low R_DS(on) ensures <75 mV drop at 6 A, meeting tight voltage regulation specs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7210DN-T1-GE3	Same PowerPAK 1212-8 package, but rated for 30 V V_DS and lower R_DS(on) (0.018 Ω @ 10 V); reduced avalanche rating (E_AS = 2.5 mJ).	Better suited for ≤24 V input systems where lower on-resistance justifies reduced voltage margin.	Select Si7210DN-T1-GE3 only if system max V_DS stress remains below 30 V; not safe for 40-V bus transients.
DMN3020LSD-13	30-V dual N-channel in SO-8; higher R_DS(on) (0.028 Ω @ 10 V), larger footprint (4.9 mm × 6.0 mm), R_thJA = 62 °C/W.	Compatible with legacy SO-8 layouts but sacrifices >40 % board area and thermal performance.	Choose DMN3020LSD-13 only for backward-compatible SO-8 redesigns; avoid when thermal or size constraints apply.

Compared with Si7210DN-T1-GE3, SI7216DN-T1-GE3 provides 33 % higher voltage margin for 36-V systems and superior avalanche ruggedness; versus DMN3020LSD-13, it delivers 4× better thermal resistance and 45 % smaller footprint while maintaining comparable gate drive compatibility.

Availability

SI7216DN-T1-GE3 is available at Aetrix Electronics and suitable for primary-side switching, synchronous rectification, and compact point-of-load converters requiring stable component supply, halogen-free compliance, and high-current density in minimal PCB area.

Supply support for SI7216DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, thermally optimized packaging.

The Si72xxDN family targets high-efficiency, space-constrained power conversion-designed specifically for primary-side switches and synchronous rectifiers in telecom, server, and industrial DC-DC modules where thermal performance and footprint are critical.

FAQ

What is the maximum continuous drain current for SI7216DN-T1-GE3 at 70 °C case temperature?

The maximum continuous drain current for SI7216DN-T1-GE3 is 5 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures, and applies to both channels independently under steady-state conditions with adequate PCB copper area.

Does SI7216DN-T1-GE3 support logic-level gate drive?

Yes, SI7216DN-T1-GE3 supports logic-level gate drive: its gate-threshold voltage V_GS(th) is specified from 1 V to 3 V, and it delivers R_DS(on) = 0.039 Ω at V_GS = 4.5 V-enabling full enhancement with standard 3.3-V or 5-V microcontroller or PWM controller outputs without level-shifting circuitry.

What is the body diode forward voltage of SI7216DN-T1-GE3 at 2 A source current?

The body diode forward voltage V_SD of SI7216DN-T1-GE3 is 0.8 V (min) to 1.2 V (max) at I_S = 2 A and T_J = 25 °C. This parameter is critical for synchronous rectifier dead-time design and reverse recovery behavior, and is measured with source as anode and drain as cathode.

Is SI7216DN-T1-GE3 suitable for reflow soldering with lead-free processes?

Yes, SI7216DN-T1-GE3 is qualified for lead-free reflow soldering per JEDEC J-STD-020, with peak temperature up to 260 °C for 20–40 seconds. Vishay specifies the exact profile in document 73257, and the PowerPAK 1212-8 package is designed for reliable attachment using standard Pb-free SAC305 paste and oven profiles.

How does the PowerPAK 1212-8 package improve thermal performance compared to SO-8?

The PowerPAK 1212-8 package achieves R_thJC = 4.5 °C/W (typical), which is ~4× lower than standard SO-8 (~20 °C/W). This is accomplished via exposed bottom-side drain copper that conducts heat directly into PCB copper layers-reducing junction temperature rise by >40 °C at 2 W dissipation and enabling higher current density without heatsinks.

SI7216DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8 Dual

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: -

Drain to Source Voltage (Vdss):: 40V

Current - Continuous Drain (Id) @ 25°C:: 6A

Rds On (Max) @ Id, Vgs:: 32mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 670pF @ 20V

Power - Max:: 20.8W

Operating Temperature:: -50°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8 Dual

SI7216DN-T1-GE3 FAQ

1.How can I place an order for SI7216DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7216DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7216DN-T1-GE3 reliable?

The price and inventory of SI7216DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7216DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7216DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7216DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7216DN-T1-GE3?

SI7216DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7216DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7216DN-T1-GE3?

For technical support, including SI7216DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7216DN-T1-GE3 requirements.

6.How does Aetrix verify that SI7216DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7216DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7216DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7216DN-T1-GE3?

All SI7216DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7216DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7216DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7216DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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